CN101221373B - Device for correcting illumination homogeneity - Google Patents
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- CN101221373B CN101221373B CN2008100331174A CN200810033117A CN101221373B CN 101221373 B CN101221373 B CN 101221373B CN 2008100331174 A CN2008100331174 A CN 2008100331174A CN 200810033117 A CN200810033117 A CN 200810033117A CN 101221373 B CN101221373 B CN 101221373B
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- 238000005286 illumination Methods 0.000 title claims abstract description 56
- 238000009826 distribution Methods 0.000 claims abstract description 37
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 238000012937 correction Methods 0.000 claims description 75
- 230000001915 proofreading effect Effects 0.000 claims description 33
- 230000000712 assembly Effects 0.000 claims description 20
- 238000000429 assembly Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 4
- 238000012886 linear function Methods 0.000 claims description 3
- 238000012887 quadratic function Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 6
- 210000001747 pupil Anatomy 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241001212149 Cathetus Species 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention provides a lighting evenness correcting device arranged near a mask plate or near the optical conjugate planes of the mask plate. The device comprises a plurality of correcting component pairs arranged on the cross section of an illuminating beam, wherein the correcting component pairs are arranged at intervals in a non-scan direction and are overlapped in scanning direction; moreover, the correcting component pairs comprises a first correcting component inserted into a rectangular illumination field in scanning direction and a second correcting component inserted into the rectangular illumination field in a direction opposite to the scanning direction; the first correcting component and the second correcting component are in the shape of parallel flat plates on the section of the scanning direction and light beam transmission direction, and can respectively complete at least one dimensional motion in the scanning direction; both correcting components are provided with opposite transmittance distribution changing with position. The invention can prevent light leakage and shadow caused by the gap formed between adjacent correcting components; meanwhile, the invention can control the distribution of integral energy in the scanning direction and the evenness of the entire illumination field.
Description
Technical field
The present invention relates to a kind of device for correcting illumination homogeneity that is applied in the etching system.
Background technology
Photoetching is one important process during semiconductor is made, and it is accurately transferred to the pattern on the mask on the substrate (as: silicon chip).In etching system, comprise illuminator between lasing light emitter and the mask, be used to produce the light illumination mode and the illuminated field distribution of needs.The illuminated field that requires illuminator to produce in the photoetching is even as far as possible, and homogeneity error is as far as possible little, so that whole illuminating bundle can be radiated on the mask equably, and projects on the substrate equably.Illumination uniformity can influence the live width homogeneity of whole exposure field.
The step-scan etching system is typical etching system, it has the rectangular illumination field, and mask stage and work stage step to next exposure region then along full exposure area scan rectangle illuminated field, along this exposure area scan rectangle illuminated field, go on according to this again.Luminous energy along the direction of scanning is integrated, and the heterogeneity of rectangular illumination field, direction of scanning is averaged out.And the direction of scanning integral energy can cause whole exposure field exposure inhomogeneous in the heterogeneity of non-direction of scanning.
In U.S. Pat 7,173,688 (the days for announcing: on February 6th, 2007), described uniformity correction system is to utilize many group correcting elements to change transmissivity, this system has bilateral structure, promptly insert many correcting elements, they are set have certain transmitance distribution, thereby change the light intensity of their institute overlay areas on the illuminated field both sides.The element that each element of every limit of illuminated field all has opposition, every group of opposition element has identical X coordinate, but inserts in opposite direction in the Y direction, and the opposition element is also rotatable to have V-structure.Opposition element maximum separately can be inserted in the middle of the illuminated field zone, does not overlap each other, also can be at the illuminated field region overlapping.
In this patent, because each correcting element has finite width and thickness, so each correcting element has a plurality of limits.When the illuminating bundle angle is big (when big Sigma throws light on), light may form reflection in the element side, cause shade.Also there is the gap between the adjacent in addition correcting element, because each gap has 0% decay, and correcting element has the decay of non-zero, therefore the gap can produce light leak, light by the gap will produce in the surround than the striped band of hard intensity or zone band, owing to new heterogeneity is introduced in the sudden change of this transmitance.
And in U.S. Pat 7,088,527 (the days for announcing: on August 8th, 2006), mentioned a kind of method that compensates light leak and shade, this method has increased extra compensating plate on the such scheme basis, on compensating plate, the non-zero attenuation rate is set, and 100% transmitance is set in other zone with the corresponding region, gap.Though the compensating plate that utilizes this band transmitance to distribute can be eliminated above-mentioned light leak and shadow effect, but need to increase extra compensating plate, and the transmitance of compensating plate distribute need be gapped corresponding with the institute of correcting element, must increase the complexity of corrective system.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of device for correcting illumination homogeneity, and it does not need to utilize extra compensating plate, just can avoid light leak that the gap caused and shade between the adjacent correction assembly; Simultaneously, the distribution of its may command direction of scanning integral energy, and the homogeneity of the full illuminated field of may command.
For reaching above-mentioned purpose, the invention provides a kind of device for correcting illumination homogeneity, be arranged near the mask or the optical conjugate face of mask near, it is right that it comprises some correction assemblies that are arranged on the illuminating bundle xsect, it is spaced setting to cover whole illuminated field along non-direction of scanning, overlapping setting is to cover whole illuminated field along the direction of scanning, and acting in conjunction changes the illumination light intensity of institute overlay area in light beam; Characteristics are,
Described correction assembly is to comprising the first correction assembly that inserts the rectangular illumination field along the direction of scanning and inserting second of rectangular illumination field in the other direction along scanning and proofread and correct assembly;
The described first correction assembly and second is proofreaied and correct assembly and be tabular parallel to each other on direction of scanning and beam Propagation direction cross section, can do motion in one dimension at least respectively in the direction of scanning, changes relative position between the two;
The described first correction assembly and the second correction assembly are overlapped at least along the beam Propagation direction, and described first apparent surface who proofreaies and correct the assembly and the second correction assembly be arranged in parallel in the mode that keeps certain intervals;
The described first correction assembly and second is proofreaied and correct assembly and is provided with the transmitance distribution that changes with change in location, and this first transmitance of proofreading and correct assembly distributes and the second opposite setting of transmitance distribution of proofreading and correct assembly, and promptly both have the transmitance distribution of inverse variation trend on moving direction.
Described all proofread and correct first of assembly centerings and proofread and correct assembly and all be provided with at grade, and adjacent two first are proofreaied and correct to be provided with at interval between the assemblies and separate; Described all proofread and correct second of assembly centerings and proofread and correct assembly and all be provided with at grade, and adjacent two second are proofreaied and correct to be provided with at interval between the assemblies and separate.
Described adjacent first proofreaies and correct the gap size of proofreading and correct between the assembly at the interval and adjacent second between the assembly equates.
Second of described all first correction assemblies and correspondence proofreaied and correct to be provided with at interval between the assembly and separated.
It is the transmitance distribution of one dimension at least that described transmitance distributes, and can be that linear function distributes, and perhaps quadratic function distributes, and perhaps trigonometric function distributes, perhaps the combination distribution of above-mentioned some kinds of functions.
The described first correction assembly and second is proofreaied and correct assembly and is made by transmission material.
The described first correction assembly and second that is provided with the transmitance distribution is proofreaied and correct assembly and is made by the method for deposition transmission on manufactured materials or decay thing, for example: on glass substrate, deposit chromium thin film, make the functional form of different films according to the position, continuously change the thickness of film, distribute with the transmitance that realizes being scheduled to.
The described first correction assembly and second that is provided with the transmitance distribution is proofreaied and correct assembly and is made by the method that deposits point-like decay at random or light-blocking matter on manufactured materials, by the transmitance distribution of density to realize being scheduled to of controlling described decay of point-like at random or light-blocking matter.
It is rectangle in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly; Proofread and correct the assemblies overlapping setting that misplaces in non-direction of scanning for these two, at this moment, described transmitance is separately positioned on these two same side surfaces of proofreading and correct assemblies, perhaps is arranged on the different side surfaces of these two correction assemblies.
It is parallelogram in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly, or trapezoidal; Proofread and correct the assemblies overlapping setting that misplaces in non-direction of scanning for these two, at this moment, described transmitance is separately positioned on these two same side surfaces of proofreading and correct assemblies, perhaps is arranged on the different side surfaces of these two correction assemblies; Proofreading and correct assembly for these two also can the complete overlapping setting of dislocation-free in non-direction of scanning, and at this moment, described transmitance is separately positioned on the different side surfaces of these two correction assemblies.
It is stepped appearance in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly; Proofread and correct assembly for these two and have mirror-image structure with respect to beam cross section, described transmitance is separately positioned on these two same side surfaces of proofreading and correct assembly, perhaps is arranged on these two the different side surfaces of proofreading and correct assembly.
Device for correcting illumination homogeneity provided by the invention distributes to the transmitance that all can independently regulate the illuminated field zone that covers because each proofreaies and correct assembly; Simultaneously, by the difformity of proofreading and correct assembly is set, and be provided with adjacent two proofread and correct assemblies between connected mode, make two adjacent correction group parts between the transmitance in total zone will be between two assemblies to transmitance independently, and adjacent component between gap area have the non-zero attenuation rate.Thereby, do not need to utilize other extra compensating plate, can avoid adjacent component between the gap light leak and the shade that cause.In addition, regulate all and proofread and correct the right transmissivity of assembly, the distribution of may command direction of scanning integral energy, the also homogeneity of the full illuminated field of may command.
Description of drawings
Fig. 1 is the structural representation with step-scan etching system of homogeneity correction device provided by the present invention;
Fig. 2 is that two edge of a knife array boards in the step-scan etching system are formed the right structural representation of edge of a knife array;
Fig. 3 is the structural representation of the homogeneity correction device in the embodiment of the invention;
Fig. 4 is the synoptic diagram of the integration light distribution of non-direction of scanning among the present invention;
Fig. 5 is that correction assembly in the embodiment of the invention is to the synoptic diagram in the YZ cross section;
Fig. 6 has described in the embodiment of the invention to proofread and correct the synoptic diagram that the right transmittance of assembly distributes;
Fig. 7 is that correction assembly in the embodiment of the invention is to being the structural representation of rectangle in the beam Propagation cross section (XZ cross section) perpendicular to the direction of scanning;
Fig. 8 is that correction assembly in the embodiment of the invention is to being the structural representation of parallelogram in the beam Propagation cross section (XZ cross section) perpendicular to the direction of scanning;
Fig. 9 is that correction assembly in the embodiment of the invention is to being trapezoidal structural representation perpendicular to the beam Propagation cross section (XZ cross section) of direction of scanning;
Figure 10 is that correction assembly in the embodiment of the invention is to being step-like structural representation perpendicular to the beam Propagation cross section (XZ cross section) of direction of scanning.
Embodiment
Below in conjunction with Fig. 1-Figure 10, describe preferred implementation of the present invention in detail:
As shown in Figure 1, be the structural representation of the applied exposure projections of homogeneity correction device of the present invention system.Wherein, light source 101 produces the laser beam that is used to expose, and it can be 248nm, perhaps 193nm, the perhaps LASER Light Source of other wavelength.The light beam 119 that light source sends at first collimates through beam expander 102, and ellipse-shaped light is converted to circular light beam; Mirror unit 103 can be single catoptron, also can be the complicated transmission system that comprises a plurality of catoptrons, and it will be transferred to beam position unit 104 from beam expander 102 emitting laser bundles 119; Beam position unit 104 is by sampling to light beam and analyzing incoming position and the angle that can proofread and correct light beam 119; The scalable optical attenuator 105 and the energy monitoring unit 106 of the energy of light beam 119 by being used to control illuminator then; Through behind the catoptron 107, light beam 119 enters the illuminator top module.
Described illuminator top module comprises module 108, module 109 and module 110;
This module 108 is diffraction optical element groups, and its main effect is to produce multiple different light illumination mode, for example: circular illumination pattern, ring illumination pattern, bipolar light illumination mode and quadrupole illuminating pattern.Described diffraction optical element is interchangeable, for example: this module 108 is runners, runner is provided with a plurality of diffraction optics sheets that can form the different light intensity distribution in the far field, be used for producing different light illumination modes respectively, when needs during, change it over to light path and get final product with some diffraction optics sheet wherein.In addition, the diffraction optics sheet of this module 108 also can be used microlens array, perhaps Fresnel Lenses, and perhaps element such as diffraction grating replaces.
Reenter from the light beam of module 108 outgoing and to be mapped to module 109, this module 109 comprises variable focus lens package and axicon, and the placement location of described variable focus lens package should satisfy on the front focal plane that makes module 108 just in time be positioned at variable focus lens package.After the diffraction element combination in module 109 and the module 108, can obtain the appropriate illumination pupil, for example: the ring illumination pupil.In addition, the focal length that changes variable focus lens package and axicon can change the partial coherence degree of light illumination mode, for example: the outer shroud and the interior ring size that change annular pupil.
The edge of a knife array that above-mentioned module 110 is comprised is right, can be made up of two onesize edge of a knife array boards, as shown in Figure 2.Every block array plate has the identical logical light pattern of several sizes, by regulating the relative motion of two edge of a knife array boards, can continuously change the visual field size of light beam in X and Y direction.Logical light pattern on the array board can utilize photoetching process to form the accurately absorbing film of size on quartz, also can be with easy chemical etch material, for example: silicon, utilize photoetching process to etch the hole of needs on the silicon version.
Light beam through module 110 outgoing has rectangular illumination field size in the plane perpendicular to optical axis 118.Homogeneity correction device 111 of the present invention is used for proofreading and correct the heterogeneity of rectangular illumination field, also is used for proofreading and correct the live width heterogeneity of silicon chip face 115.It can also can be positioned near the optical conjugate face of mask 112 near the position the close mask between module 110 and the mask 112.Shown in Figure 1A, this homogeneity correction device 111 is arranged near the back focal plane of module 110 condenser groups.
Non-uniform lighting to the pattern on the mask 112 can be reflected on the figure of silicon chip 115 by projection objective 114, causes the homogeneity difference of figure, uses the correction of the present invention to the illumination system homogeneity, can obtain the even live width of silicon chip.In addition, the degeneration of projection objective 114 performances also can cause illumination uniformity to change, and causes the figure live width on the silicon chip 115 non-homogeneous, by the adjusting compensation of homogeneity correction device 111, can reach and proofread and correct figure live width purpose heterogeneous on the silicon chip 115.Further, measure the illumination light distribution,,, regulate homogeneity correction device 111 automatically, reach the inhomogeneity purpose of timely compensation silicon chip 115 illumination light intensity by electronic-controlled installation to the test result judgment processing at silicon chip 115.
As shown in Figure 3, structural representation for homogeneity correction device 111 provided by the invention, it comprises 2 groups and proofreaies and correct assembly 202n and 203n (n=1,2 ..., M), they insert from the both sides of rectangular illumination field 201 respectively, concrete, proofread and correct assembly 202n along scanning in the other direction (promptly-Y direction) insert in the illuminated field 201, proofread and correct assembly 203n along in direction of scanning (being the Y direction) insertion illuminated field 201.
It is right to proofread and correct assembly 202n and the corresponding correction assembly 203n correction assembly that partners, it is spaced setting to cover whole illuminated field along non-direction of scanning, overlapping setting is to cover whole illuminated field along the direction of scanning, and acting in conjunction changes the illumination light intensity of institute overlay area in light beam; As shown in Figure 4, the integration light distribution of a kind of non-direction of scanning of curve 301 expressions, described each proofread and correct assembly to can independently proofreading and correct the part section in this distributions, and all M to the correction assembly to acting in conjunction, promptly the whole illuminated field of scalable is at the light intensity integral uniformity of non-direction of scanning.
Described correction assembly is tabular parallel to each other (as Fig. 7-shown in Figure 10) to 202n and 203n on direction of scanning and beam Propagation direction cross section, can do motion in one dimension at least respectively in the direction of scanning, changes relative position between the two; As shown in Figure 5, proofreading and correct assembly 202n and 203n can move along the direction shown in arrow S1 and the arrow S2 respectively.
Described correction assembly distributes to being respectively arranged with the transmitance that changes with change in location on 202n and the 203n, as shown in Figure 5, the transmitance that correction assembly 202n and 203n have with the change in location of Y direction distributes, the variation of relative position between this correcting element 202n and the 203n can be regulated and proofread and correct the whole transmitance of assembly to 202n and 203n.
The transmitance of described correction assembly 202n and 203n distributes and is provided with on the contrary, and promptly both have the transmitance distribution of inverse variation trend on moving direction.As shown in Figure 6, proofread and correct assembly 202n and have the linear distribution shown in the dotted line 401 among Fig. 6, for example: its transmitance 70% linearity from the beginning is increased to 100%, has the linear distribution shown in the dotted line 402 among Fig. 6 and proofread and correct assembly 203n, for example: its transmitance is reduced to 70% from 100% linearity of beginning, the two combination can realize that the transmitance shown in Fig. 6 cathetus 403 distributes, and realizes the intensity modulation that needs in the zone that is covered in the illuminated field.Perhaps, the transmitance that correction assembly 202n has segmentation distributes, that is: proofread and correct assembly 202n initially to 1/2 coverage, transmitance is increased to 100% from 50% linearity, to the coverage of end, has uniform 100% transmitance 1/2, at this moment, proofread and correct assembly 203n and have the distribution of segmentation transmitance too, just opposite with the transmitance distribution trend of proofreading and correct assembly 202n; Can realize proofreading and correct the purpose of assembly 202n and 203n undamped light in the illuminated field scope that is covered like this, also make adjacent correction assembly between can be because of not increasing at interval extra astigmatism.
It is the transmitance distribution of one dimension at least that described transmitance distributes, and specifically can be that linear function distributes, and perhaps quadratic function distributes, and perhaps trigonometric function distributes, and perhaps other forms of function distributes.
As shown in Figure 2, first of described correction assembly centering is proofreaied and correct assembly 202n and all is provided with at grade, and adjacent two are proofreaied and correct and between assembly 202n and the 202n-1 line of rabbet joint 204a are set and separate at interval; Described all proofread and correct second of assembly centerings and proofread and correct assembly 203n and all be provided with at grade, and adjacent two second are proofreaied and correct and between assembly 203n and the 203n-1 line of rabbet joint 204b are set and separate at interval; Described line of rabbet joint 204a and line of rabbet joint 204b are equal-sized slight gap.
The interval is set between described correction assembly 202n and the 203n separates, this is a small distance at interval, for example: 0.1mm.
Described correction assembly 202n and 203n are by glass, and perhaps transmission material is made.
Described correction assembly 202n and the 203n that is provided with the transmitance distribution makes by the method for deposition transmission on manufactured materials or decay thing, for example: on glass substrate, deposit chromium thin film, make the functional form of different films according to the position, continuously change the thickness of film, distribute with the transmitance that realizes being scheduled to.
Described be provided with correction assembly 202n that transmitance distributes and 203n by substrate deposition at random the method for point-like decay or light-blocking matter make, distribute with the transmitance that realizes being scheduled to by the density of controlling described point-like thing.
As shown in Figure 7, described correction assembly 202n and 203n are rectangles in the beam Propagation cross section perpendicular to the direction of scanning, in non-direction of scanning (directions X) the overlapping setting that misplaces, at this moment, described transmitance is separately positioned on these two similar face of proofreading and correct assembly, for example, all be arranged on the upper surface 207a or the lower surface 207b that proofread and correct assembly, also can be arranged on these two different surfaces of proofreading and correct assembly, for example, one is arranged on the upper surface 207a that proofreaies and correct assembly, and another is arranged on lower surface 207b, and vice versa.
Because proofread and correct assembly 202n and the dislocation of 203n on directions X this moment, make line of rabbet joint 204a and 204b exist and depart from that the light by line of rabbet joint 204a and 204b has the non-zero attenuation rate, so this shifts to install the effective leakage of light in the line of rabbet joint that reduced at optical axis direction.Proofread and correct assembly 202n and 203n formed transmitance T (n), 202n-1 and 203n-1 are formed transmitance T (n-1) and proofread and correct assembly, for the transmitance of dislocation part 205 between T (n) and T (n-1).
Described correction assembly 202n and 203n are parallelogram (as shown in Figure 8) in the beam Propagation cross section perpendicular to the direction of scanning, or trapezoidal (as shown in Figure 9); Proofread and correct assembly 202n and 203n in non-direction of scanning (directions X) the overlapping (not shown) that is provided with that can misplace for these two, at this moment, described transmitance is separately positioned on these two similar face of proofreading and correct assembly, perhaps is arranged on these two different surfaces of proofreading and correct assembly; Proofreading and correct assembly 202n and 203n for these two also can the complete overlapping setting of dislocation-free at non-direction of scanning (directions X), and at this moment, line of rabbet joint 204a and 204b are for favouring optical axis direction; The transmitance of described correction assembly 202n and 203n is separately positioned on different surface, and for example, the transmitance of proofreading and correct assembly 202n distributes and is arranged on upper surface 207a, and the transmitance distribution of correction assembly 203n is arranged on lower surface 207b, and vice versa.
Be similar to as shown in Figure 7, being interspersed of this transmitance is provided with has reduced the light in the line of rabbet joint and has revealed, and the transmitance of dislocation part is between the right transmitance of adjacent correction assembly.
As shown in figure 10, described correction assembly 202n and 203n are stepped appearances in the beam Propagation cross section perpendicular to the direction of scanning; At this moment, line of rabbet joint 204a and 204b have stepped construction, and two proofreaied and correct assembly 202n and 203n has mirror-image structure with respect to beam cross section, and described transmitance is separately positioned on the similar face of these two correction assemblies, for example, all be arranged on the upper surface 207a or the lower surface 207b that proofread and correct assembly, also can be arranged on these two different surfaces of proofreading and correct assembly, for example, one is arranged on the upper surface 207a that proofreaies and correct assembly, another is arranged on lower surface 207b, and vice versa.
Described staged slot structure can reduce light leak, and the transmitance of center section 206 is proofreaied and correct between the right transmitance of assembly between adjacent two.
Device for correcting illumination homogeneity provided by the invention, proofreading and correct assembly can also be to remove rectangle in the cross section perpendicular to the direction of scanning, parallelogram, trapezoidal, other any labyrinth that stepped appearance is outer, and can be provided with overlapping, dislocation, mirror image or transmitance is set is distributed in identical or specific connected mode such as different surface, this connected mode satisfy two adjacent correction group parts between the transmitance in total zone between two assemblies to transmitance independently, and make adjacent component between gap area have the attenuation rate of non-zero, avoid the gap between the adjacent component to cause light leak and shade.In addition, regulate the right transmissivity of all component, the distribution of may command direction of scanning integral energy, the also homogeneity of the full illuminated field of may command.
Claims (21)
1. device for correcting illumination homogeneity, be arranged near the mask or the optical conjugate face of mask near, it is right that it comprises some correction assemblies that are arranged on the illuminating bundle xsect, these some correction assemblies are provided with and cover whole illuminated field being spaced along non-direction of scanning, the overlapping setting and cover whole illuminated field along the direction of scanning; It is characterized in that:
Described correction assembly is to comprising the first correction assembly that inserts the rectangular illumination field along the direction of scanning and inserting second of rectangular illumination field in the other direction along scanning and proofread and correct assembly;
The described first correction assembly and second is proofreaied and correct assembly and be tabular parallel to each other on direction of scanning and beam Propagation direction cross section, does motion in one dimension at least respectively in the direction of scanning, changes relative position between the two;
The described first correction assembly and the second correction assembly are overlapped at least along the beam Propagation direction, and described first apparent surface who proofreaies and correct the assembly and the second correction assembly be arranged in parallel in the mode that keeps certain intervals;
The described first correction assembly and second is proofreaied and correct assembly and is provided with the transmitance distribution that changes with change in location, and this first transmitance of proofreading and correct assembly distributes and the second opposite setting of transmitance distribution of proofreading and correct assembly, and promptly both have the transmitance distribution of inverse variation trend on moving direction.
2. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, described all proofread and correct first of assembly centerings and proofread and correct assembly and all be provided with at grade, and adjacent two first are proofreaied and correct to be provided with at interval between the assemblies and separate.
3. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, described all proofread and correct second of assembly centerings and proofread and correct assembly and all be provided with at grade, and adjacent two second are proofreaied and correct to be provided with at interval between the assemblies and separate.
4. as claim 2 or 3 described device for correcting illumination homogeneity, it is characterized in that described adjacent first proofreaies and correct the gap size of proofreading and correct between the assembly at the interval and adjacent second between the assembly equates.
5. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, second of described all first correction assemblies and correspondence proofreaied and correct to be provided with at interval between the assembly and separated.
6. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, described first proofreaies and correct assembly and second proofreaies and correct the transmitance distribution that the transmitance distribution of assembly is one dimension at least.
7. device for correcting illumination homogeneity as claimed in claim 6, it is characterized in that described first transmitance of proofreading and correct the assembly and the second correction assembly is distributed as linear function and distributes, perhaps quadratic function distributes, perhaps trigonometric function distributes, perhaps the combination distribution of above-mentioned some kinds of functions.
8. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, the described first correction assembly and second is proofreaied and correct assembly and made by transmission material.
9. device for correcting illumination homogeneity as claimed in claim 8 is characterized in that, the described first correction assembly and second that is provided with the transmitance distribution is proofreaied and correct assembly and made by the method for deposition transmission on manufactured materials or decay thing.
10. device for correcting illumination homogeneity as claimed in claim 8, it is characterized in that, the described first correction assembly and second that is provided with the transmitance distribution is proofreaied and correct assembly and is made by the method that deposits point-like decay at random or light-blocking matter on manufactured materials, by the transmitance distribution of density to realize being scheduled to of controlling described decay of point-like at random or light-blocking matter.
11. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, it is rectangle in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly.
12. device for correcting illumination homogeneity as claimed in claim 11 is characterized in that, described first proofreaies and correct assembly and second proofreaies and correct the assembly overlapping setting that misplaces in non-direction of scanning.
13. device for correcting illumination homogeneity as claimed in claim 12 is characterized in that, described transmitance is separately positioned on first and proofreaies and correct the assembly and the second same side surface of proofreading and correct assembly, perhaps is arranged on these two the different side surfaces of proofreading and correct assembly.
14. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, it is parallelogram in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly, or trapezoidal.
15. device for correcting illumination homogeneity as claimed in claim 14 is characterized in that, described first proofreaies and correct assembly and second proofreaies and correct the assembly overlapping setting that misplaces in non-direction of scanning.
16. device for correcting illumination homogeneity as claimed in claim 15 is characterized in that, described transmitance is separately positioned on first and proofreaies and correct the assembly and the second same side surface of proofreading and correct assembly, perhaps is arranged on these two the different side surfaces of proofreading and correct assembly.
17. device for correcting illumination homogeneity as claimed in claim 14 is characterized in that, described first proofreaies and correct assembly and second proofreaies and correct assembly in the overlapping setting of non-direction of scanning dislocation-free.
18. device for correcting illumination homogeneity as claimed in claim 17 is characterized in that, described transmitance is separately positioned on first and proofreaies and correct the different side surface that assembly and second is proofreaied and correct assembly.
19. device for correcting illumination homogeneity as claimed in claim 1 is characterized in that, it is stepped appearance in the beam Propagation cross section perpendicular to the direction of scanning that the described first correction assembly and second is proofreaied and correct assembly.
20. device for correcting illumination homogeneity as claimed in claim 19 is characterized in that, the described first correction assembly and second is proofreaied and correct assembly and is had mirror-image structure with respect to beam cross section.
21. device for correcting illumination homogeneity as claimed in claim 20 is characterized in that, described transmitance is separately positioned on first and proofreaies and correct the assembly and the second same side surface of proofreading and correct assembly, perhaps is arranged on these two the different side surfaces of proofreading and correct assembly.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100331174A CN101221373B (en) | 2008-01-25 | 2008-01-25 | Device for correcting illumination homogeneity |
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| CN2008100331174A CN101221373B (en) | 2008-01-25 | 2008-01-25 | Device for correcting illumination homogeneity |
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| CN101221373A CN101221373A (en) | 2008-07-16 |
| CN101221373B true CN101221373B (en) | 2010-06-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301912A (en) * | 2014-07-11 | 2016-02-03 | 上海微电子装备有限公司 | Exposure device and exposure method for lithographic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2004770A (en) * | 2009-05-29 | 2010-11-30 | Asml Holding Nv | LITHOGRAPHIC APPARATUS AND METHOD FOR ILLUMINATION UNIFORMITY CORRECTION AND UNIFORMITY DRIFT COMPENSATION. |
| NL2008322A (en) * | 2011-04-13 | 2012-10-16 | Asml Holding Nv | Double euv illumination uniformity correction system and method. |
| JP6169114B2 (en) * | 2012-03-14 | 2017-07-26 | エーエスエムエル ネザーランズ ビー．ブイ． | Lithographic apparatus |
| CN102722090B (en) * | 2012-06-08 | 2015-03-04 | 中国科学院光电技术研究所 | Illumination uniformity compensation device |
| CN103365118B (en) * | 2013-07-19 | 2015-03-25 | 中国科学院上海光学精密机械研究所 | Calibration method and calibration device for light beam monitoring system of mask aligner |
| CN104375384B (en) * | 2013-08-14 | 2017-03-29 | 上海微电子装备有限公司 | A kind of exposure method and its exposure device |
| CN107885038A (en) * | 2016-09-30 | 2018-04-06 | 上海微电子装备（集团）股份有限公司 | Device for correcting illumination homogeneity, bearing calibration and a kind of exposure projections system |
| CN108062005B (en) * | 2016-11-07 | 2020-12-25 | 俞庆平 | Splicing improvement method of direct-writing type silk screen plate making system |
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| CN1797218A (en) * | 2004-12-28 | 2006-07-05 | Asml控股股份有限公司 | Uniformity correction system having light leak and shadow compensation |
| US7173688B2 (en) * | 2004-12-28 | 2007-02-06 | Asml Holding N.V. | Method for calculating an intensity integral for use in lithography systems |
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| CN1797218A (en) * | 2004-12-28 | 2006-07-05 | Asml控股股份有限公司 | Uniformity correction system having light leak and shadow compensation |
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| CN105301912A (en) * | 2014-07-11 | 2016-02-03 | 上海微电子装备有限公司 | Exposure device and exposure method for lithographic equipment |
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| Publication number | Publication date |
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| CN101221373A (en) | 2008-07-16 |
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Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |