CN101009206A - Apparatus for treating substrates and method of treating substrates - Google Patents

Abstract

The present invention provides a substrate processing apparatus capable of efficiently and reliably removing a resist provided on a semiconductor wafer. The substrate processing apparatus is provided with: a turntable (3) for holding a semiconductor wafer; and a nozzle body (33), which is disposed opposite to the semiconductor wafer held by the turntable, and mixed sulfuric acid and hydrogen peroxide water are supplied to the substrate; the nozzle body has: The longer body part (34) is along the radial direction of the substrate; the first liquid supply pipe and the second liquid supply pipe (37, 38) supply sulfuric acid and hydrogen peroxide water to the body part; the first slit, the second Slits and curved surfaces (41, 42, 39) mix sulfuric acid and hydrogen peroxide water supplied to the main body from the first liquid supply pipe and the second liquid supply pipe, and supply from the main body to almost the entire radial direction of the semiconductor wafer.

Description

Substrate processing apparatus and substrate processing method

technical field

The present invention relates to a substrate processing device and a substrate processing method for processing a resist provided on a substrate with a processing liquid mixed with sulfuric acid and hydrogen peroxide.

Background technique

For example, in the manufacturing process of a liquid crystal display device or a semiconductor device, there is a film forming process or a photolithography process for forming a circuit pattern on a substrate such as a rectangular glass substrate or a semiconductor wafer. In these steps, the resist provided on the substrate is removed, followed by cleaning.

Such processing is performed by a spin-type processing apparatus having a turntable for rotating the substrate. As a treatment solution for removing the resist provided on the substrate, sulfuric acid hydrogen peroxide water called SPM, which is mixed with hydrogen peroxide water in sulfuric acid, is used for cleaning after removal. Ammonia based cleaning solution called SC-1.

Conventionally, when removing the resist provided on the substrate, sulfuric acid and hydrogen peroxide water are pre-mixed with, for example, a mixing valve or a mixing tank, and then supplied to a spray nozzle arranged above a turntable of a processing apparatus. The processing liquid supplied to the spray nozzle is sprayed toward the center portion of the substrate in the radial direction.

As a result, the processing liquid flows outward from the center in the radial direction of the substrate due to the centrifugal force caused by the rotation of the substrate, so that the processing liquid reaches the entire surface of the substrate, and the resist provided on the surface of the substrate can be removed. Such prior art is disclosed in Patent Document 1, for example.

Patent Document 1: Japanese Patent Laid-Open No. 2005-39205

The principle of resist removal using SPM, which is a mixture of sulfuric acid and hydrogen peroxide, is known to utilize the action of persulfuric acid (H ₂ SO ₅ ) generated when sulfuric acid and hydrogen peroxide are mixed.

However, persulfuric acid produced by mixing sulfuric acid and hydrogen peroxide water has a very short lifetime (Life Span) to maintain its active state after production. That is, the time for which the active state can be maintained is short, so the activity is lost in a short time.

Therefore, if sulfuric acid and hydrogen peroxide water are mixed in a mixing valve or a mixing tank, etc., to supply the injection nozzle, it takes time from mixing to supplying to the substrate, and during this period, sulfuric acid and hydrogen peroxide water are mixed to generate The persulfuric acid loses activity and cannot effectively and reliably remove the resist provided on the substrate.

As the effect of removing the resist from the above-mentioned substrate, in addition to the effect of persulfuric acid produced by mixing sulfuric acid and hydrogen peroxide water, there is also the influence of heat generated by mixing. It is known that the higher the temperature of the treatment night, the higher the temperature. The resist removal ability is also higher.

However, when the processing liquid is supplied to the radially central portion of the substrate, and the processing liquid is caused to flow radially outward from the central portion by the centrifugal force generated by the rotation of the substrate, it is inevitable that the temperature of the processing liquid also decreases as it flows radially outward. question. Therefore, the substrate cannot be processed with a uniform processing liquid in the entire radial direction, so processing variation occurs.

Contents of the invention

The present invention provides a substrate processing apparatus and a substrate processing method in which sulfuric acid and hydrogen peroxide water are mixed to form a treatment night immediately before supplying to a substrate, and are supplied in almost the entire radial direction of the substrate. Thus, if sulfuric acid and hydrogen peroxide water are mixed, the processing liquid can be supplied to the substrate while maintaining its active state, and can be supplied without causing a temperature difference in the radial direction of the substrate.

The substrate processing apparatus of the present invention processes a resist film provided on a substrate. The substrate processing apparatus includes: a turntable holding the substrate; Sulfuric acid and hydrogen peroxide water are supplied to the above-mentioned substrate; the above-mentioned nozzle body has: a main body part, which is long along the radial direction of the above-mentioned substrate; a first chemical solution supply mechanism, which supplies the above-mentioned sulfuric acid and hydrogen peroxide water to the main body part; The second chemical solution supply means mixes the sulfuric acid and hydrogen peroxide solution supplied to the main body by the first chemical solution supply means, and supplies the main body from the main body to almost the entire radial direction of the substrate.

The substrate processing method of the present invention uses a processing liquid mixed with sulfuric acid and hydrogen peroxide to process the resist film provided on the substrate, which includes: the process of holding the substrate on a rotary table; a step of mixing sulfuric acid and hydrogen peroxide water to prepare a treatment liquid; and a step of supplying the treatment liquid over almost the entire radial direction of the substrate rotated by the turntable.

Another substrate processing apparatus of the present invention processes a resist film provided on a substrate. The substrate processing apparatus includes: a rotary table holding the substrate; a first two-fluid nozzle disposed above the rotary table, Using pressurized gas to pressurize the sulfuric acid and spray it into mist; and the second two-fluid nozzle is arranged above the above-mentioned rotary table, pressurize the hydrogen peroxide water with pressurized gas and spray it into mist; The mist of sulfuric acid sprayed from the first two-fluid nozzle and the mist of hydrogen peroxide sprayed from the second two-fluid nozzle were mixed before reaching the substrate, and supplied to the substrate.

Invention effect

According to this invention, the nozzle body having a long main body portion along the radial direction of the substrate is disposed opposite to the substrate, sulfuric acid and hydrogen peroxide water are supplied to the main body portion and mixed, and the nozzle body is formed over substantially the entire length of the radial direction of the substrate. Supply the mixed treatment liquid on top.

Therefore, sulfuric acid and hydrogen peroxide water can be mixed and supplied to the substrate before deactivation, and are supplied from the above-mentioned nozzle body to the entire radial direction of the substrate, so the treatment liquid does not have a temperature difference in the radial direction of the substrate, and can effectively and uniformly Carry out substrate processing.

In addition, in the present invention, the sulfuric acid and hydrogen peroxide water that are sprayed in mist are sprayed separately, mixed and supplied to the substrate before reaching the substrate after spraying, therefore, the time from mixing sulfuric acid and hydrogen peroxide water to supplying the substrate can be shortened. time.

Thereby, since the substrate can be supplied without losing the activity of the persulfuric acid produced by mixing sulfuric acid and hydrogen peroxide water, the resist film provided on the substrate can be reliably removed.

Description of drawings

FIG. 1 is a cross-sectional view showing a schematic configuration of a spin processing device according to a first embodiment of the present invention.

Fig. 2 is a side view of the nozzle body.

Fig. 3 is an enlarged longitudinal sectional view of the nozzle body shown in Fig. 2 .

Fig. 4 is a side view showing a nozzle body according to a second embodiment of the present invention.

Fig. 5 is an enlarged longitudinal sectional view of the nozzle body shown in Fig. 4 .

6 is a cross-sectional view showing a schematic configuration of a spin processing device according to a third embodiment of the present invention.

Fig. 7 is a piping system diagram of the first to third two-fluid nozzles shown in Fig. 6 .

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 to 3 show a first embodiment of the present invention, and FIG. 1 shows a spin processing device as a processing device. The spin processing device has a cover 1 . A plurality of discharge pipes 2 are connected at predetermined intervals in the circumferential direction to the bottom of the cover body 1 . Each discharge pipe 2 communicates with a not-shown exhaust pump.

In addition, the said cover body 1 has the lower cover 1a and the upper cover 1b, and the upper cover 1b can be driven in an up-down direction by the drive mechanism, such as an air cylinder which is not shown in figure.

A turntable 3 is provided inside the cover body 1 . A plurality of support members 4 are rotatably provided at predetermined intervals in the circumferential direction on the peripheral portion of the upper surface of the turntable 3 . A clamp pin 5 having a stepped portion formed of, for example, an inclined surface or the like is provided at a position eccentric from the rotation center of the support member 4 on the upper end surface of each support member 4 .

A semiconductor wafer W serving as a substrate is supplied to the above-mentioned turntable 3 with the disk facing upward. That is, the lower surface of the peripheral portion of the semiconductor wafer W supplied to the turntable 3 engages with the stepped portion of the clamp portion 5 . When the support member 4 is rotated in this state, the clamp pin 5 rotates eccentrically, so that the peripheral portion of the semiconductor wafer W is held.

Furthermore, since the clamp pin 5 is biased in the rotational direction for holding the semiconductor wafer W by a spring not shown, the holding state of the semiconductor wafer W can be released by rotating the supporting member 4 against the biasing force of the spring.

The turntable 3 is rotationally driven by a control motor 11 . In this control motor 11, a cylindrical rotor 13 is rotatably inserted into a cylindrical stator 12, and the above-mentioned turntable 3 is connected to the rotor 13 via a power transmission member 3a.

The rotation of the control motor 11 is controlled by the control device 14 . Accordingly, the turntable 3 can be rotated at a predetermined rotational speed by the control device 14 .

A cylindrical fixed shaft 15 is inserted into the rotor 13 . A nozzle head 16 located on the upper surface side of the above-mentioned turntable 3 is provided at the upper end of the fixed shaft 15 . That is, the nozzle head 16 is set so as not to rotate together with the turntable 3 . The nozzle head 16 is provided with a first lower nozzle body 17 for spraying an etching liquid as a processing liquid, and a second lower nozzle body 18 for spraying a cleaning liquid.

Accordingly, the processing liquid and the rinse liquid can be selectively sprayed from the lower nozzle bodies 17 and 18 toward the central portion of the lower surface of the semiconductor wafer W held by the turntable 3 . That is, the lower surface of the semiconductor wafer W can be etched and rinsed.

The upper surface side of the above-mentioned turntable 13 is covered with a turbulence prevention cover 19 . This turbulence prevention cover 19 can prevent turbulent flow from occurring on the lower surface side of the semiconductor wafer W held by the turntable 3, and has openings formed in its central portion that can be sprayed from the above-mentioned nozzle bodies 17, 18 to the lower surface of the semiconductor wafer W. The penetration hole 20 for etching solution and cleaning solution.

An arm body 25 as a driving mechanism is provided on the side of the lid body 1 . The arm body 25 has a vertical portion 26 and a horizontal portion 17 , and the base end portion of the horizontal portion 17 is connected to the upper end of the vertical portion 26 . The lower end of the vertical portion 26 is connected to a rotary motor 28 . The rotation motor 28 can rotate and drive the arm body 25 at a predetermined angle in the horizontal direction.

The above-mentioned rotary motor 28 is mounted on a movable plate 29 provided so as to be slidable in the vertical direction by a linear guide not shown in the figure. The movable plate 29 is driven in the vertical direction by the vertical driving air cylinder 31 .

A nozzle body 33 is connected to the front end of the horizontal portion 27 of the arm body 25 via a mounting member 32 so that the nozzle body 33 can be positioned so as to face the upper surface of the semiconductor wafer W held by the turntable 3 . As shown in FIGS. 2 and 3 , the nozzle body 33 has a main body portion 34 having a length approximately the same as the radial dimension of the semiconductor wafer W, and the upper surface of one end in the longitudinal direction of the main body portion 34 is connected by the mounting member 32 . On the front end portion of the above-mentioned horizontal portion 27 .

As shown in FIG. 3 , a first liquid supply hole 35 is opened at one end in the width direction midway in the longitudinal direction of the upper surface of the main body portion 34 , and a second liquid supply hole 36 is opened at the other end. A first liquid supply pipe 37 for supplying sulfuric acid is connected to the first liquid supply hole 35 through a joint 37a, and a second liquid supply pipe 38 for supplying hydrogen peroxide water is connected to the second liquid supply hole 36 through a joint 38a. The first liquid supply tube 37 and the second liquid supply tube 38 constitute the first liquid medicine supply mechanism of the present invention.

The one side 34a and the other side 34b in the width direction of the main body 34 are connected by an arc-shaped curved surface 39 formed at the lower end of the main body 34 . The first slit 41 is formed over the entire length in the longitudinal direction at the upper end portion of the one side surface 34a. The second slit 42 is formed over the entire length in the longitudinal direction at the upper end portion of the other side surface 34b.

The first liquid supply hole 35 communicates with the first slit 41 , and the second liquid supply hole 36 communicates with the second slit 42 . The first liquid supply hole 35 , the second liquid supply hole 35 , and the second liquid supply hole 35 , which connect the first liquid supply pipe 37 and the second liquid supply pipe 38 to the main body 34 , are formed by the first slit 41 and the second slit 42 and the curved surface 39 . The sulfuric acid and hydrogen peroxide water supplied from the liquid hole 36 are mixed as described later, and supplied to the second chemical solution supply mechanism for the semiconductor wafer W described above.

A vibrator 45 is provided on the upper surface of the main body portion 34 as shown in FIGS. 2 and 3 . The vibrator 45 vibrates ultrasonically with high-frequency power supplied from a not-shown ultrasonic generator. That is, the main body portion 34 is ultrasonically vibrated by the vibrator 45 . When the main body portion 34 is ultrasonically vibrated, ultrasonic vibration is applied to the sulfuric acid and hydrogen peroxide water mixed and supplied from the main body portion 34 to the semiconductor wafer W described above.

Next, the operation when the resist provided on the upper surface of the semiconductor wafer W is removed by the spin processing apparatus having the above-mentioned structure will be described.

First, a semiconductor wafer W provided with a resist is supplied to the upper surface of the turntable 3 and held by the support member 4 . Next, the arm body 25 is driven to position the nozzle body 33 provided at the tip of the horizontal portion 27 with respect to the upper surface of the semiconductor wafer W. As shown in FIG. That is, one end of the lengthwise direction of the nozzle body 33 is located at the center of the radial direction of the semiconductor wafer W, the longitudinal direction is along the radial direction of the semiconductor wafer W, and the lowermost end of the curved surface, that is, the apex is positioned to be the same as the semiconductor wafer W. The upper surfaces of the upper surfaces are oppositely spaced apart at a little interval.

In addition, when the semiconductor wafer W is supplied to the turntable 3 , the nozzle body 33 is made to wait at a position retracted from above the cover body 1 .

When the nozzle body 33 is positioned above the semiconductor wafer W, sulfuric acid is supplied to the first liquid supply pipe 37 and hydrogen peroxide water is supplied to the second liquid supply pipe 38 while the turntable 3 is rotated.

The sulfuric acid supplied to the first liquid supply pipe 37 flows from the first liquid supply hole 35 to the first slit 41, flows out from the entire length of the first slit 41, and flows along one side surface 34a of the main body portion 34 of the nozzle body 33. flow down.

The hydrogen peroxide water supplied to the second liquid supply pipe 38 flows from the second liquid supply hole 36 to the second slit 42, flows out from the entire length of the second slit 42, and flows along the side of the body portion 34 of the nozzle body 33. The other side 34b flows downwards.

The sulfuric acid and hydrogen peroxide water flowing downward along one side 34a and the other side 34b of the main body 34 flow along the curved surface 39 formed at the lower end of the main body 34, thereby forming the curved surface 39 at the lowermost end. The vertexes of the semiconductor wafer W are mixed to form a processing liquid, and flow out in a slit shape over the entire length of the upper surface of the semiconductor wafer W in the radial direction. The flows of sulfuric acid and hydrogen peroxide along the one side 34a and the other side 34b are indicated by arrows in FIG. 3 .

The semiconductor wafer W is rotated by the rotary table 3 . Therefore, since the processing liquid is supplied to the entire upper surface of the semiconductor wafer W, the resist provided on the upper surface of the semiconductor wafer W is stripped.

The sulfuric acid and hydrogen peroxide water supplied to the nozzle body 33 are supplied to the upper surface of the semiconductor wafer W while being mixed on the curved surface 39 formed at the lower end portion of the main body 34 of the nozzle body 33 to become a processing liquid. Therefore, the processing liquid is supplied to the semiconductor wafer W before the persulfuric acid produced by mixing sulfuric acid and hydrogen peroxide loses its activity, and the resist stripping by the processing liquid can be reliably performed.

At this time, if the vibrator 45 provided on the upper surface of the main body 34 is energized to ultrasonically vibrate the main body 34, the resist peeling by the above-mentioned processing liquid can be performed more efficiently.

The treatment liquid is simultaneously supplied from the curved surface 39 of the main body portion 34 of the nozzle body 33 over the entire length of the semiconductor wafer W in the radial direction. That is, the treatment liquid whose temperature is raised by the heat of reaction by mixing sulfuric acid and hydrogen peroxide is supplied from the lower end of the curved surface 39 of the main body 34 simultaneously in the entire radial direction of the semiconductor wafer W.

Therefore, since the processing liquid supplied to the semiconductor wafer W does not have a temperature difference in the radial direction of the semiconductor wafer W, the entire surface of the semiconductor wafer W can be processed with the processing liquid having substantially the same temperature. As a result, the processing of the semiconductor wafer W can be performed uniformly without occurrence of processing variations due to differences in temperature.

That is, according to this embodiment, the semiconductor wafer W can be processed before the activity of persulfuric acid generated by mixing sulfuric acid and hydrogen peroxide water is lost. Furthermore, the entire upper surface of the semiconductor wafer W can be processed with the processing liquid having no temperature difference. Therefore, with the above configuration, the entire upper surface of the semiconductor wafer W can be processed uniformly and reliably.

4 and 5 show a second embodiment of the present invention. In this embodiment, the lower end portion of the main body portion 34A of the nozzle body 33A is formed as a narrow portion 50 whose width dimension is smaller than other portions. A liquid supply channel 51 is formed substantially over the entire length of the narrow portion 50 in the longitudinal direction.

On the above-mentioned main body portion 34A, a plurality of first liquid supply holes 52 are formed at predetermined intervals in the longitudinal direction. connected. Furthermore, a plurality of second liquid supply holes 53 (only one is shown in FIG. 5 ) are formed at predetermined intervals in the longitudinal direction on the main body portion 34A, and one end of the second liquid supply hole 53 is opened on one surface side of the main body portion 34A. , and the other end communicates with the above-mentioned liquid supply channel 51.

The first liquid supply pipe 54 for supplying sulfuric acid is connected to the first liquid supply hole 52 through a joint 54a, and the second liquid supply pipe 55 for supplying hydrogen peroxide water is connected to the second liquid supply hole 53 through a joint 55a. . Moreover, a plurality of supply holes 56 are formed on the above-mentioned body portion 34A, one end of which is opened on the curved surface 39 formed at the lower end, and the other end communicates with the above-mentioned liquid supply channel 51 . 34 has predetermined intervals in the longitudinal direction, and has three supply holes 56 at equal angles centered on the vertical line in the width direction.

Like the first embodiment, the nozzle body 33A having the above configuration is attached to the tip of the horizontal portion 27 of the arm body 25 and arranged to face each other along the radial direction of the upper surface of the semiconductor wafer W held by the turntable 3 .

In this state, sulfuric acid is supplied to the liquid supply passage 51 from the first liquid supply pipe 54 , and hydrogen peroxide water is supplied to the liquid supply passage 51 from the second liquid supply pipe 55 . Sulfuric acid and hydrogen peroxide water are mixed in the above-mentioned liquid supply channel 51 to form a treatment liquid, and the temperature rises due to the heat of reaction, and are supplied to the semiconductor from a plurality of supply holes 56 communicating with the above-mentioned liquid supply channel 51 as shown by arrows in FIG. 5 . the upper surface of the wafer W.

In the second embodiment, sulfuric acid and hydrogen peroxide water are mixed into the processing liquid in the liquid supply passage 51 of the nozzle body 33A, and then supplied to the semiconductor wafer W from the supply hole 56 . That is, the processing liquid is supplied to the semiconductor wafer W before the persulfuric acid produced by mixing sulfuric acid and hydrogen peroxide loses its activity, so that the processing of the semiconductor wafer W using the processing liquid can be performed quickly and reliably.

Furthermore, the processing liquid is supplied from the main body portion 34A of the nozzle body 33A to the entire length in the radial direction of the semiconductor wafer W at the same time. Therefore, the processing liquid whose temperature rises due to the heat of reaction generated by mixing sulfuric acid and hydrogen peroxide water is supplied to the radial direction of the semiconductor wafer W at approximately the same temperature, so that the semiconductor wafer can be uniformly processed with the processing liquid at the same temperature. The entire upper surface of W.

6 and 7 show a third embodiment of the present invention. FIG. 6 shows a spin processing apparatus having a processing tank 101 as a processing apparatus. A cover body 102 is arranged in the processing tank 101 . The cover body 102 includes: a lower cover 103 disposed on the bottom plate of the treatment tank 101; and an upper cover 104 configured to be movable up and down relative to the lower cover 103 by an unillustrated vertical driving mechanism.

A plurality of discharge pipes 105 are connected at predetermined intervals in the circumferential direction to the bottom wall of the lower cover 103 . These exhaust pipes 105 communicate with an exhaust pump 106 . The start, stop and rotation speed of the exhaust pump 106 can be controlled by the control device 107 .

A base plate 108 is disposed on the lower surface side of the lid body 102 . Mounting holes 109 are formed in the base plate 108 at positions corresponding to the above-mentioned lower cover 103 . An upper end portion of a stator 112 of a control motor 111 constituting a drive source is fitted into and fixed to the mounting hole 109 .

The stator 112 has a cylindrical shape, and a cylindrical rotor 113 is rotatably inserted therein. In addition, the start/stop and rotation speed of the control motor 111 are controlled by the control device 107 as will be described later.

A cylindrical coupling body 114 is integrally fixed to an upper end surface of the rotor 113 , and a lower end surface of the coupling body 114 is in contact with the upper end surface of the rotor 113 . A large-diameter collar portion 115 having a diameter larger than the inner diameter of the stator 112 is formed at the lower end of the connecting body 114 . The collar portion 115 is in slidable contact with the upper end surface of the stator 112 , thereby preventing the rotor 113 from coming off the stator 112 without preventing the rotation of the rotor 113 .

A through hole 103 a is formed in a portion of the lower cover 103 corresponding to the rotor 113 , and the coupling body 114 protrudes into the cover body 102 from the through hole 103 a. A turntable 116 is attached to the upper end of the connecting body 114 . On the peripheral portion of the turntable 116, six (only two are shown) columnar holding members 117 are provided at predetermined intervals in the circumferential direction, at intervals of 60° in the present embodiment, and the holding members 117 can pass through A drive mechanism not shown is rotationally driven.

A support pin 118 having a tapered surface is provided on the upper end surface of the holding member 117 at a position deviated from the rotation center of the holding member 117 . The semiconductor wafer W serving as a substrate is supplied to the turntable 116 , and the lower surface of the peripheral portion of the semiconductor wafer W is brought into contact with the tapered surface of the above-mentioned support pin 118 . When the holding member 117 is rotated in this state, the support pin 118 rotates eccentrically, so that the semiconductor wafer W supplied to the turntable 116 is held by the clamping force of the support pin 118 .

In addition, the clamping force of the semiconductor wafer W by the support pin 118 can be set according to the eccentric rotation angle of the holding member 117 by the driving mechanism. In addition, when the drive mechanism is configured to rotate the holding member 117 eccentrically using spring force, the clamping force can be adjusted according to the strength of the spring.

The rotary table 116 is covered with a turbulence prevention cover 121 . The turbulence prevention cover 121 has an outer peripheral wall 122 covering the outer peripheral surface of the turntable 116 and an upper surface wall 123 covering the upper surface. The upper side of the outer peripheral wall 122 has a small diameter portion 122a and the lower side has a large diameter portion 122b. The turbulence prevention cover 121 prevents turbulence from being generated on the upper surface of the turntable 116 when the turntable 116 is rotated. The upper surface of the upper cover 104 is open, and an annular member 125 is provided on the inner peripheral surface thereof.

When supplying the unprocessed semiconductor wafer W to the above-mentioned rotary table 116 or taking out the supplied processed semiconductor wafer W, the above-mentioned upper cover 104 is lowered as described later.

An opening 131 is formed on the upper wall of the treatment tank 101 . A fan and filter unit 132 such as ULPA or HEPA is provided in the opening 131 . The fan and filter unit 132 is used to further clean the air in the clean room and introduce it into the treatment tank 101. The amount of clean air introduced is determined by the control device 107 controlling the drive unit 133 of the fan and filter unit 132. . That is, the number of rotations of the fan (not shown) of the fan and filter unit 132 is controlled by the driving unit 133 , so that the supply amount of clean air into the processing tank 101 can be controlled.

An inlet and outlet 134 is opened on one side of the treatment tank 101 . The entrance and exit 134 are opened and closed by a shutter 135 provided on one side of the treatment tank 101 so as to be slidable in the vertical direction. The shutter 135 is driven by an air cylinder 136 operated by compressed air. That is, the air cylinder 136 is provided with a control valve 137 for controlling the flow of compressed air, and the control device 107 switches and controls the control valve 137 to move the shutter 135 up and down.

A cylindrical fixed shaft 141 is inserted into the rotor 113 of the control motor 111 . At the upper end of the fixed shaft 141, a nozzle head 143 protruding toward the upper surface side of the turntable 116 from a through hole 142 formed in the turntable 116 is provided. The nozzle head 143 is provided with a pair of nozzles 144 for spraying chemical liquid and pure water as processing liquid toward the lower surface of the semiconductor wafer W held by the turntable 116 .

Openings 145 are formed in the upper wall 123 of the turbulence prevention cover 121 to face the nozzle heads 143 , and the processing liquid sprayed from the nozzles 144 can reach the lower surface of the semiconductor wafer W through the openings 145 .

Above the semiconductor wafer W held by the turntable 116, a first two-fluid nozzle 151, a second two-fluid nozzle 152, and a third two-fluid nozzle 153 are disposed, with the tips of these nozzles facing the center of the semiconductor wafer W, respectively.

As shown in FIG. 7 , the first two-fluid nozzle 151 is connected to a first supply source 155 for supplying sulfuric acid through a first pipe 156 . The second two-fluid nozzle 152 is connected to a second supply source 157 for supplying hydrogen peroxide water through a second pipe 158 . The third two-fluid nozzle 153 is connected to a third supply source 158 of ammonia water through a third pipe 160 .

Furthermore, the liquid supplied to these nozzles is pressurized into a mist form by supplying the first two-fluid nozzle to the third two-fluid nozzle pipes 151 to 153 through the branch pipes 161a to 161c branched from the air supply pipe 161, and is discharged from each nozzle body 151. ~152 jets of high-pressure pressurized gas such as nitrogen.

The first to third liquid control valves 162 to 164 are respectively provided in the first to third piping 156, 158, and 160, and the first gas control valves are respectively provided to the branch pipes 161a to 161c. Valves to the third gas use control valves 165-167. The opening and closing control of the liquid control valves 162 to 164 and the gas control valves 165 to 167 is performed by the control device 107 .

Next, the steps of peeling the resist from the semiconductor wafer W using the spin processing apparatus having the above-mentioned configuration and performing cleaning after the peeling will be described.

First, the semiconductor wafer W with the resist provided on the upper surface is supplied to the turntable 116 . Then, when the turntable 116 rotates, the control device 107 opens the first liquid control valve 162 and the second liquid control valve 163 , and also opens the first gas control valve 165 and the second gas control valve 166 .

As a result, sulfuric acid is supplied to the first two-fluid nozzle 151 , and the sulfuric acid is pressurized by the pressurizing gas to be sprayed toward the upper surface of the semiconductor wafer W in the form of mist. At the same time, hydrogen peroxide water is supplied to the second two-fluid nozzle 152 , and the hydrogen peroxide water is pressurized by the pressurizing gas to form a mist and sprayed toward the upper surface of the semiconductor wafer W.

The sulfuric acid and hydrogen peroxide water sprayed separately in the form of mist from the first two-fluid nozzle 151 and the second two-fluid 152 are mixed before reaching the upper end of the semiconductor wafer W. Thereby, sulfuric acid hydrogen peroxide water is supplied to the semiconductor wafer W.

The sulfuric acid and hydrogen peroxide water are atomized and mixed just before reaching the semiconductor wafer W. That is, sulfuric acid and hydrogen peroxide water are supplied to the semiconductor wafer W immediately after being mixed. Therefore, if persulfuric acid is produced by mixing sulfuric acid and hydrogen peroxide water, the sulfuric acid hydrogen peroxide water is supplied to the semiconductor wafer W while maintaining the active state of the persulfuric acid, so it is possible to effectively and reliably remove the sulfuric acid hydrogen peroxide water located on the semiconductor wafer. Resist on W.

If the removal of the resist by sulfuric acid hydrogen peroxide solution is completed, the first liquid control valve 162 and the first gas control valve 165 are closed, the supply of sulfuric acid is stopped, and the third liquid control valve 164 and the third control valve 164 are opened simultaneously. The gas control valve 167 atomizes aqueous ammonia and supplies it to the semiconductor wafer W from the third two-fluid nozzle 153 .

Thus, the atomized ammonia water is mixed with the hydrogen peroxide water atomized and sprayed from the second two-fluid 152 to become a cleaning solution, i.e. SC-1, which is then supplied to the semiconductor wafer W, and then the semiconductor wafer W is cleaned to remove the resist. top surface of the agent.

Since the first to third two-fluid nozzles 151 to 152 are disposed above the turntable 116 in this way, the resist provided on the upper surface of the semiconductor wafer W can be stripped and post-stripped continuously and efficiently. cleaning.

The sulfuric acid and hydrogen peroxide water which generate the sulfuric acid hydrogen peroxide water used for stripping the resist are atomized and supplied to the semiconductor wafer W. Therefore, not only can sulfuric acid and hydrogen peroxide water be mixed sufficiently and supplied to the semiconductor wafer W, but also the amount of sulfuric acid and hydrogen peroxide water used can be significantly reduced compared to the case of supplying without atomization.

According to the experiment, in the case of a common spray nozzle that does not atomize chemical liquids such as sulfuric acid, hydrogen peroxide, and ammonia water, the amount of chemical liquid used is 0.4 liters per minute. The amount of use becomes 0.04 liter/minute of about one-tenth. In addition, it was confirmed that the same effect was obtained when the resist was removed and the cleaning after removal was performed for the same processing time when the chemical solution was not atomized and when it was liquefied.

In each of the above-mentioned embodiments, the semiconductor wafer was exemplified as the substrate, but the substrate is not limited to the semiconductor wafer, and may also be a glass plate used for a liquid crystal display device, as long as it is necessary to use a treatment liquid mixed with sulfuric acid and hydrogen peroxide water. Remove the resist from the substrate.

Claims (9)

1. a substrate board treatment is handled the resist film that is located on the substrate, it is characterized in that,

This substrate board treatment possesses: the rotating platform that keeps aforesaid substrate; And nozzle body, with the substrate that is kept by this rotating platform configuration opposed to each other mutually, mix sulfuric acid and aquae hydrogenii dioxidi and supply to aforesaid substrate;

The said nozzle body possesses:

Body, longer along the radial direction of aforesaid substrate;

The first soup feed mechanism is supplied with above-mentioned sulfuric acid and aquae hydrogenii dioxidi to this body;

And the second soup feed mechanism, mix sulfuric acid and the aquae hydrogenii dioxidi supplied with to above-mentioned body by this first soup feed mechanism, supply with to the almost entire radius direction of aforesaid substrate from above-mentioned body.

2. substrate board treatment as claimed in claim 1 is characterized in that,

The above-mentioned second soup feed mechanism has: first slit forms along the length direction of a side of above-mentioned body; Second slit forms along the length direction of another side of above-mentioned body; And curved surface, connect side and another side of above-mentioned body in the lower end of above-mentioned body;

The above-mentioned first soup feed mechanism has: first feed pipe, supply with above-mentioned sulfuric acid to above-mentioned first slit; And second feed pipe, supply with above-mentioned aquae hydrogenii dioxidi to above-mentioned second slit;

Sulfuric acid of supplying with to above-mentioned first slit from above-mentioned first feed pipe and the aquae hydrogenii dioxidi of supplying with to above-mentioned second slit from above-mentioned second feed pipe, side from each slit along above-mentioned body and another side flow respectively, the curved surface in the lower end are mixed and are supplied to aforesaid substrate.

3. substrate board treatment as claimed in claim 1 is characterized in that,

The above-mentioned second soup feed mechanism has: liquid feeding channel, and the length direction in the bottom of above-mentioned body along this body forms; And a plurality of supply holes, form with predetermined distance along the length direction of above-mentioned body, be communicated with the lower surface of above-mentioned liquid feeding channel and above-mentioned body;

The above-mentioned first soup feed mechanism has: first feed pipe, supply with above-mentioned sulfuric acid to above-mentioned liquid feeding channel; And second feed pipe, supply with above-mentioned aquae hydrogenii dioxidi to above-mentioned liquid feeding channel;

Above-mentioned sulfuric acid and aquae hydrogenii dioxidi mix at above-mentioned liquid feeding channel, supply with to aforesaid substrate from above-mentioned feed flow hole.

4. substrate board treatment as claimed in claim 1 is characterized in that,

Upper surface at above-mentioned body is provided with the oscillator that makes this body ultrasonic vibration.

5. a substrate processing method using same utilizes the treatment fluid that has mixed sulfuric acid and aquae hydrogenii dioxidi that the resist film that is located on the substrate is handled, and it is characterized in that, comprising:

The operation that on rotating platform, keeps aforesaid substrate;

Above aforesaid substrate, mix the operation that sulfuric acid and aquae hydrogenii dioxidi are made treatment fluid; And

On the almost entire radius direction of the aforesaid substrate that rotates by above-mentioned rotating platform, supply with the operation of above-mentioned treatment fluid.

6. a substrate board treatment is handled the resist film that is located on the substrate, it is characterized in that,

This substrate board treatment possesses:

The rotating platform that keeps aforesaid substrate;

First two-fluid spray nozzle is configured in the top of above-mentioned rotating platform, with gas-pressurized the sulfuric acid pressurization is become and sprays after vaporific; And

Second two-fluid spray nozzle is configured in the top of above-mentioned rotating platform, with gas-pressurized the aquae hydrogenii dioxidi pressurization is become and sprays after vaporific;

To before arriving substrate, mix, and supply to aforesaid substrate from the vaporific sulfuric acid of above-mentioned first two-fluid spray nozzle injection and the vaporific aquae hydrogenii dioxidi that sprays from above-mentioned second two-fluid spray nozzle.

7. substrate board treatment as claimed in claim 6 is characterized in that,

With gas-pressurized ammoniacal liquor is pressurizeed and become the 3rd two-fluid spray nozzle that sprays after vaporific disposing above the above-mentioned rotating platform;

, make with the aquae hydrogenii dioxidi of atomized spray and ammoniacal liquor and before arriving substrate, mix and supply to aforesaid substrate being located at after resist on the aforesaid substrate handles with vaporific sulfuric acid and aquae hydrogenii dioxidi.

8. a substrate processing method using same is handled the resist film that is located on the substrate, it is characterized in that, comprising:

The operation that aforesaid substrate is rotatably kept;

With gas-pressurized the sulfuric acid pressurization is become the operation that spray vaporific back;

With gas-pressurized the aquae hydrogenii dioxidi pressurization is become the operation that spray vaporific back; And

Mix the operation that supplies to aforesaid substrate behind vaporific above-mentioned sulfuric acid and the above-mentioned aquae hydrogenii dioxidi.

9. substrate processing method using same as claimed in claim 8 is characterized in that,

Has following operation: after with vaporific sulfuric acid and aquae hydrogenii dioxidi substrate being handled, supply to aforesaid substrate after mixing vaporific aquae hydrogenii dioxidi and vaporific ammoniacal liquor.

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