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CN101006748A - 硅电容器麦克风及制造方法 - Google Patents

硅电容器麦克风及制造方法 Download PDF

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CN101006748A
CN101006748A CNA2005800283211A CN200580028321A CN101006748A CN 101006748 A CN101006748 A CN 101006748A CN A2005800283211 A CNA2005800283211 A CN A2005800283211A CN 200580028321 A CN200580028321 A CN 200580028321A CN 101006748 A CN101006748 A CN 101006748A
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microphone
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transducer
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CN101006748B (zh
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安东尼·D·米内尔维尼
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    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2869—Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself
    • H04R1/2892—Mountings or supports for transducers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
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    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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Abstract

本发明提供了硅电容器麦克风及制造方法。公开了一种硅电容器麦克风封装。该硅电容器麦克风封装包括换能器单元、基板和盖。该基板包括在其中形成有凹进的上表面。该换能器单元附于基板的上表面并与所述凹进的至少一部分重叠，其中，换能器单元的背体积形成在该换能器单元和基板之间。所述盖放置在换能器单元上方并且包括开孔。

Description

硅电容器麦克风及制造方法
技术领域
本专利总体上涉及换能器(transducer)的外罩。更具体地说，本专利涉及一种包括用于屏蔽换能器的外罩的硅电容器麦克风。
背景技术
存在与在硅模的表面上建造麦克风元件有关的许多公开文献。这些公开文献中的某些与意图减小助听器单元的大小的助听器领域有关。虽然这些公开文献减小了助听器的大小，但是它们没有公开如何保护换能器免受外部干扰。例如，这种类型的换能器易碎并且容易受到物理损害。此外，必须保护换能器使其免受光干扰和电磁干扰。此外，它们需要声压基准正常工作。由于这些原因，硅模必须被屏蔽。
已经实现了一些屏蔽来容纳这些装置。例如，已经提供了绝缘金属罐或盘。此外，已利用了DIP和小轮廓集成电路(SOIC)封装。然而，与制造这些外罩相关联的缺点(诸如交付时间、成本和加工(tooling))使得这些选择不可取。
发明内容
本发明旨在提供一种硅电容器麦克风封装，该封装使得声能能够接触布置在外罩内的换能器。该外罩提供了必要的压力基准，同时保护换能器免受光、电磁干扰和物理损伤的影响。根据本发明的实施例，一种硅电容器麦克风包括换能器和基板以及形成外罩的盖。所述基板可具有其中形成有凹进的上表面，使得所述换能器可以附于所述上表面并与所述凹进的至少一部分重叠从而形成背体积。所述盖放置在所述换能器的上方并且包括开孔，所述开孔适于使声波到达所述换能器。
根据下面结合附图的说明，本发明的其他特点和优点将会显而易见。
附图说明
图1是本发明的硅电容器麦克风的第一实施例的截面图；
图2是本发明的硅电容器麦克风的第二实施例的截面图；
图3是本发明的硅电容器麦克风的第三实施例的截面图；
图4是附于终端用户电路板的本发明的第三实施例的截面图；
图5是以另选方式附于终端用户电路板的本发明的第三实施例的截面图；
图6是硅电容器麦克风固定至其的基板的平面图；
图7是本发明的麦克风封装的纵向截面图；
图8是本发明的麦克风封装的横向截面图；
图9是本发明的麦克风封装的纵向截面图；
图10是本发明的麦克风封装的横向截面图；
图11是本发明的麦克风封装的顶部的截面图；
图12是本发明的麦克风封装的顶部的截面图；
图13是本发明的麦克风封装的顶部的截面图；
图14A是本发明的麦克风封装的外罩的层压底部的截面图；
图14B是图14A的层压底部的一层的平面图；
图14C是图14A的层压底部的一层的平面图；
图14D是图14A的层压底部的一层的平面图；
图15是本发明的麦克风封装的底部的截面图；
图16是本发明的麦克风封装的底部的截面图；
图17是本发明的麦克风封装的底部的截面图；
图18是本发明的麦克风封装的底部的截面图；
图19是本发明的麦克风封装的侧部的平面图；
图20是本发明的麦克风封装的侧部的截面图；
图21是本发明的麦克风封装的侧部的截面图；
图22是本发明的麦克风封装的侧部的截面图；
图23是本发明的麦克风封装的截面图；
图24是本发明的麦克风封装的截面图；
图25是本发明的麦克风封装的截面图；
图26是本发明的麦克风封装的截面图；
图27是具有保持环的本发明的麦克风封装的截面图；
图28是具有保持环的本发明的麦克风封装的截面图；
图29是具有保持环的本发明的麦克风封装的截面图；
图30是多个麦克风封装的面板的平面图；以及
图31是麦克风对的平面图。
具体实施方式
尽管本发明允许许多不同形式的实施例，但只有本发明的几个可能的实施例在附图中示出并将在此详细描述，同时要理解的是，本公开应该被视为对本发明的原理的例示，而不是要将本发明的广义方面限制为所例示的实施例。
本发明着眼于麦克风封装。在此公开的麦克风封装相对于利用塑料体/引线框的麦克风封装的好处包括以面板形式来处理封装的能力，使得每次操作可以形成更多个单元，从而使成本大大降低。用于相似功能封装的典型引线框包含40至100个连接在一起的器件。本公开将具有约14,000个连接在一起的器件(作为一个面板)。此外，在此公开的实施例需要最少的“硬加工(hard-tooling)”。这使得处理可以针对定制布局需求进行调整，而不必重新设计模具、引线框和修剪/成形刀具。
此外，许多所描述的实施例具有与终端用户的PCB(通常由FR-4制成)匹配得更好的热膨胀系数，因为该麦克风封装也主要由FR-4制成。本发明的这些实施例还可消除对在塑料体/引线框封装中所需的线接合(wire bonding)的需要。因为可以通过在电路板上电镀出通孔以形成到焊盘的通路来形成引线，所以覆盖区(footprint)通常小于塑料体/引线框设计所需的覆盖区。在典型的塑料体/引线框设计中，将使用鸥翅(gullwing)结构，在该结构中引线使整个覆盖区变宽。
现在参照图1至图3，图1至图3示出了本发明的硅电容器麦克风封装10的三个实施例。在硅麦克风封装10内包括放大器16和换能器12，例如，如在美国专利第5,870,482号(通过引用将其合并于此)中所公开的硅电容器麦克风。该封装自身包括：基板14、向换能器12提供压力基准的背体积或空气腔18、以及盖20。可以用允许以电路板面板形式进行处理的FR-4材料形成基板14，从而利用制造规模的经济性。图6是基板14的平面图，示出了由多个终接盘包围的背体积18。
可以通过多种方法形成背体积18，这些方法包括：对基板14的上表面19进行受控的深度钻孔以形成换能器12安装在其上的凹进(图1)；对几个FR-4单片钻出路径并层压这些单片以形成背体积18，其可能具有或者可能没有内部支柱(图2)；或者完全钻穿基板14并在该器件的底部设置密封环22，在将表面安装到用户“板”28期间该密封环22将密封背体积18(图3-5)。在此示例中，将基板和用户板28组合起来创建了背体积18。背体积18被换能器12(例如，MEMS装置)覆盖，该换能器12可以是“凸块焊接的(bumpbonded)”并且面向下安装。将边界密封从而背体积18可操作地“气密”。
附加用于保护和加工的盖20。盖20包含开孔24，开孔24可包含用于防止水、颗粒和/或光进入封装从而在内部损害内部部件(即半导体芯片)的烧结金属插入物26。开孔24适于使声波可到达换能器12。烧结金属插入物26还将具有某些声学特性，例如声阻尼或声阻。因此可将烧结金属插入物26选为这样：其声学特性增强换能器12的功能能力和/或硅麦克风10的整体性能。
参照图4和图5，最后形式的产品是硅电容器麦克风封装10，其非常适合通过回流焊接工艺连接到终端用户的PCB 28。图5示出了通过在终端用户的电路板28中包括腔室32来扩大背体积18的方法。
图7至图10示出了本发明的另一实施例的硅电容器麦克风封装40。在该实施例中，由多层材料(诸如在设置电路板时使用的材料)形成外罩42。因此，外罩42通常包括交替的导电材料层44和非导电材料层46。非导电层46通常是FR-4板。导电层44通常是铜。有利的是，该多层外罩结构允许将电路、电源和接地面、焊盘、接地盘、电容层和电镀通孔盘包括在外罩自身的结构内。导电层提供EMI屏蔽，同时还允许如电容器和/或电感器的结构来用于对输入/输出信号和/或输入电源进行滤波。
在所例示的实施例中，外罩42包括由侧部52隔开的顶部48和底部50。外罩42还包括：开孔或声口54，用于接收声学信号；和内室56，其适于容纳换能器单元58(通常是硅模麦克风或球形格子阵列封装(BGA))。例如用导电粘合剂60电连接顶部48、底部50和侧部52。可将导电粘合剂方便地设置为适合配置的干燥粘合剂(其布置在顶部48、底部50和侧部52之间)的形式。在组装期间将这些部分放到一起之后，可以通过压力、热或其他适合的手段来激活干燥粘合剂片。各部分均可包括交替的导电层44和非导电层46。
室56可包括内衬61。内衬61主要由导电材料形成。应该理解，内衬可包括非导电材料的部分，因为导电材料可能没有完全覆盖非导电材料。内衬61保护换能器58免受电磁干扰等，其更像是法拉第(faraday)笼。还可由外罩的顶部48、底部50和侧部52内的各导电层的适合的电耦合一起来提供内衬61。
在图7至图10以及图23至图26所述的各种实施例中，外罩42的包括开孔或声口54的部分还包括在开孔54上方或开孔54内的形成环境屏障62的材料层。该环境屏障62通常是形成膜的聚合材料，诸如聚四氟乙烯(PTFE)或烧结金属。提供环境屏障62以保护外罩42的室56(因此，也保护外罩42内的换能器单元58)免受环境因素(诸如阳光、湿气、油、污垢和/或灰尘)的影响。环境屏障62还具有固有的声学特性，例如声阻尼/声阻。因此，将环境屏障62选为其声学特性与换能器单元58协作以增强麦克风的性能。特别是结合图24和图25所示的实施例时更是如此，可将其配置为作为定向麦克风进行工作。
环境屏障层62通常密封在形成声口54的顶部48或底部50的多个层之间。例如，可将环境屏障固定在导电材料层44之间，从而使导电材料层44可以充当用于对输入和输出信号或输入电源进行滤波的电容器(其电极由金属限定)。在导电层也包含薄膜无源器件(诸如电阻器和电容器)的情况下，环境屏障层62在与导电层44接触时还可用作介电保护层。
除了保护室56免受环境因素的影响之外，屏障层62还使得可以进行随后的湿处理、对外罩42的外部的板清洗、以及经由通孔电镀从壁到地的电连接。环境屏障层62还使得可以修改基于印刷电路板的封装的制造过程中的制造步骤的顺序。可以利用该优点来包含不同的端子样式。例如，可将双面封装制造成具有一对开孔54(见图25)，这两个开孔都包括环境屏障层62。无论封装是面向上还是面向下安装，封装的外观和作用都相同，或者可将封装安装为提供定向麦克风特性。此外，还可将环境屏障层62选择为使其声学特性增强麦克风的定向性能。
参照图7、8以及图11至图13，通常不将换能器单元58安装到外罩的顶部48。该限定与相对终端用户电路板的最终安装朝向无关。根据换能器58的朝向以及对底部50的选择，可以面向下地安装顶部48。可以对顶部48的导电层44进行构图以形成电路、接地面、焊盘、接地盘、电容器和电镀通孔盘。参照图11至图13，按封装的需要，可能有另外的交替的导电层44、非导电层46和环境保护膜62。另选的是，也可以故意排除某些层。可将第一非导电层46构图为选择性地露出第一导电层44上的某些特征。
图11示出了麦克风封装的另选顶部48。在该实施例中，可形成层之间的连接以提供到地的导管。图11的顶部包括接地面和/或图案电路64以及环境屏障62。接地面和/或图案电路64通过针脚65相连。
图12示出了顶部48的另一实施例。除了层之间的连接、接地面/图案电路64、以及环境屏障62之外，本实施例还包括在底面上构图的导电凸块66(例如Pb/Sn或Ni/Au)，导电凸块66提供到换能器58的第二电接触。这里，将导电电路构图从而形成在凸块66和电镀通孔端子之间的电连接。
图13示出了顶部48的又一实施例。在该实施例中，顶部48不包括开孔或声口54。
参照图7、8以及图14至18，底部50是封装的主要安装换能器58的组件。该限定与相对终端用户电路板的最终安装朝向无关。根据换能器58的安装朝向以及对顶部48的构造的选择，可以面向上地安装底部50。与顶部48相似，可以对底部50的导电层44进行构图以形成电路、接地面、焊盘、接地盘、电容器和电镀通孔盘。如图14至18所示，按封装的需要，可能有另外的交替的导电层44、非导电层46和环境保护膜62。另选的是，也可以故意排除某些层。可将第一非导电层46构图为选择性的露出第一导电层44上的某些特征。
参照图14A至14D，底部50包括层压的多层板，这些层压的多层板包括布置在非导电材料层46上的导电材料层44。参照图14B，将第一导电材料层用来附接到线接合或倒装晶片接合。该层包括用于限定引线盘、接合盘和接地盘的蚀刻部。这些盘将具有钻穿它们的孔，使得可以形成电镀通孔。
如图14C所示，非导电材料的干膜68覆盖导电材料。该图例示出了露出的接合盘以及露出的接地盘。该露出的接地盘将与导电环氧树脂电接触并形成到侧部52和基部50的地的连接。
参照图14D，可将接地层嵌入基部50内。阴影区域表示典型的接地面64。接地面与电源盘或输出盘不重叠，但是将与换能器58重叠。
参照图15，示出了底部50的一个实施例。本实施例的底部50包括焊接屏蔽层68以及交替的导电材料层44和非导电材料层46。该底部还包括用于与终端用户板进行电连接的焊盘70。
图16和17示出了具有扩大的背体积18的底部50的实施例。这些实施例示出了利用导电/非导电分层来形成背体积18。
图18示出了底部50的又一实施例。在本实施例中，背部50包括声口54和环境屏障62。
参照图7至10以及图19至22，侧部52是封装的组件，其连接底部50和顶部48。侧部52可包括夹在两个导电材料层44之间的单个非导电材料层46。侧部52形成了容纳换能器58的室56的内部高度。侧部52通常由一个或更多个电路板材料的层形成，每层都具有加工出的窗口(routed window)72(见图19)。
参照图19至图22，侧部52包括内侧壁74。如图20和21所示，内侧壁74通常镀有导电材料(通常为铜)。侧壁74由加工出的窗口72的外周形成并且用导电材料来涂布/金属化。
另选的是，可由许多交替的非导电材料层46和导电材料层44形成侧壁74，每个层都具有加工出的窗口72(见图19)。在此情况下，窗口72的外周不需要用导电材料覆盖，因为导电材料层44会提供有效的屏蔽。
图23至图26示出了麦克风封装40的不同的实施例。这些实施例利用了上述的顶部48、底部50和侧部52。可以想到，在不脱离在此公开和描述的本发明的情况下，可以以任意组合地使用上述的各个顶部48、底部50和侧部52的实施例。
在图23中，使到终端用户板的连接穿过底部50。封装安装朝向是底部50向下。由线接合实现从换能器58到电镀通孔的连接。换能器背体积18仅由硅麦克风的(向下安装的)背孔形成。没有示出接合盘、线结合以及到端子的迹线。PCB设计领域的普通技术人员将会理解，这些迹线位于第一导体层44上。来自换能器58的线接合连接到露出的盘。这些盘通过电镀通孔和表面上的迹线与焊盘相连。
在图24中，也使到终端用户板的连接穿过底部50。同样，封装安装朝向是底部50。由线接合实现从换能器58到电镀通孔的连接。由(向下安装的)换能器58的背孔和底部50的组合形成背体积18。
在图25中，也使到终端用户板的连接穿过底部50。同样，封装安装朝向是底部50。由线接合实现从换能器58到电镀通孔的连接。在封装的两侧具有声口54，没有背体积。该方法适合定向麦克风。
在图26中，使到终端用户板的连接穿过顶部48或底部50。封装安装朝向为顶部48向下或者底部50向下。通过倒装或线接合以及迹线布线来实现从换能器58到电镀通孔的连接。使用通过将底部50和顶部48层压在一起而创建的空气腔来形成背体积18。封装制造的某些部分是在附加了换能器58之后进行的。具体地说，在附加了换能器58之后，进行通孔形成、电镀和焊盘限定。保护膜62是疏水性的(hydrophobic)，并且防止腐蚀性电镀化学物质进入室56。
参照图27至图29，换能器单元58安装至其的部分可包括保持环84。该保持环84防止环氧树脂86通过毛细作用进入换能器58以及流入声口或开孔54。因此，保持环84的形状通常与换能器58覆盖区的形状相匹配。保持环84包括在非导电层材料上成像的导电材料(例如3mil.厚的铜)。
参照图27，保持环84被成像在非导电层上。将环氧树脂施加在保持环84的周界外侧，添加换能器58以使其与环氧树脂86和保持环84重叠。这减少了环氧树脂86沿着换能器58的蚀刻口的侧面向上毛细传送(在硅模麦克风的情况下)。
另选的是，参照图28，将保持环84定位为使换能器58不与保持环84接触。在本实施例中，保持环84比换能器58的覆盖区稍小，从而环氧树脂86的路径受限，因而毛细传送的可能较低。在图29中，将保持环84制造为使其与换能器58的蚀刻口相接触。下面的表提供了用于制造本实施例的外罩的典型电路板工艺技术的说明性示例。
表1：材料
    材料   类型 组件   注释
1   0.5/0.5盎司DSTCu 5芯FR-4 底部(导电层非导电层1)
2   0.5/0.5盎司DSTCu 5芯FR-4 底部(导电层3和4；非导电层2)
3 106预浸料坯   用于层压材料1和材料2
4   0.5/0.5盎司DSTCu 40芯FR-4 侧部 之后进行金属化
5   裸/0.5盎司Cu 2芯FR-4(2个) 顶部(每个包括1导电层和1非导电层)
    6   膨胀的PTFE 环境屏障
表2：对材料的处理(基部材料1)
    步骤     类型 描述 注释
    1     干燥膜导电层
2 曝光 掩模材料1(上导电层) 在下导电层上形成接地面
    3     显影
4 蚀刻Cu 不对上导电层进行蚀刻
    5     剥掉干膜
表3：对材料的处理(底部材料2)
    步骤     类型 描述 注释
    1     干燥膜导电层
2 曝光 掩模材料2(上导电层) 在上导电层上形成接地面
    3     显影
4 蚀刻Cu 不对下导电层进行蚀刻
    5     剥掉干膜
表4：对材料1、2和3的处理(形成底部)
    步骤    类型 描述 注释
1 层压 使用材料3来层压材料1和2
    2    钻出通孔 钻头＝0.025英寸
    3    直接金属化/喷溅铜 对通孔电镀
    4    加干膜(L1和L4)
曝光 材料1和2层压的掩模(上导电层和下导电层) 形成迹线和焊盘
    6    显影
    7    电解Cu 1.0mil
    8    电解Sn 按需
    9    剥掉干膜
    10    蚀刻Cu
    11    蚀刻Cu
12    在这里插入修整选项 NG选项(见下表) 用于预制(proof ofprinciple)的NG选项
13    仅干燥上导电层上的膜(覆盖层) 2.5mil. 上导电层上的最小厚度
14 曝光 材料1和2层压的掩模(上和下) 该掩模限定了上导电层上的将容纳干膜焊掩模(覆盖层)的区域。底层没有施加至其的干膜。通过在顶部涂布来桥接电镀通孔。
    15    显影
    16    硬化 全硬化
17 加工面板 加工头＝按需 形成4”×4”的个体。符合完成尺寸。
表5描述了侧部52的形成。该工艺包括在FR-4板中加工出开口的矩阵。然而，打孔被认为是成本有效的制造方法。可以通过以下方式进行打孔：打穿整个芯；或者另选的是，打穿几层无流预浸料坯和薄芯c台(c-stage)，然后对其进行层压以形成适当厚度的壁。
在加工出所述矩阵之后，该板必须被化学镀或DM电镀。最后，必须将该板加工成与底部相匹配。可以首先或最后进行该步骤。将最后的加工当作第一步骤执行会使得该板更易加工。
表5：对材料4的处理(侧部)
    步骤 类型 描述 注释
1 加工/打孔出开口的矩阵 加工头＝0.031英寸 形成侧部
2 直接金属化/喷溅Cu 最小0.25mil. 形成侧部上的侧壁
    3 加工面板
表6描述了对顶部的处理。形成顶部48包括将干膜覆盖层或液态焊掩模成像在底(即形成内侧的导电层)上。露出的顶部48的层没有铜涂层。可以通过蚀刻将其处理为单面片状物，或者进行购买。
孔的矩阵钻在盖板(lid board)中。可以在成像步骤之后进行钻孔。如果是这样的话，则必须选择适合的焊掩模以使其能够经受得住钻孔处理。
表6：对顶部的处理
    步骤   类型 描述     注释
    1   对膜进行干燥 导电层
    2   曝光 掩模裸层     形成导电环
    3   显影
    4   硬化
    5   钻出孔的矩阵 钻头0.025英寸     声口
6 层压 材料5的2片之间的PTFE(环境屏障) 形成顶部
表7：用材料4层压材料1和2的工艺
    步骤   类型 描述 注释
1   将导电粘合剂筛选在材料4上
2 层压 具有侧部的底部 形成具有侧部(间隔物)的底部
3 添加换能器组件 硅模麦克风和集成电路
表8：用材料5层压材料1、2和4的处理
    步骤   类型  描述     注释
1   将导电粘合剂筛选在顶部上
2 层压 底部和具有顶部的侧部 形成外罩
    3   切成块
表9：修整选项NG(镍/金)
    步骤   类型     描述     注释
1   浸入Ni(40-50微英寸)
2   浸入Au(25-30微英寸)
表10：修整选项NGT(镍/金/锡)
    步骤 类型
    1 对L2加掩模(使用厚干膜或高粘性切割带)
    2 浸入Ni(40-50微英寸)
    3 浸入Au(25-30微英寸)
    4 去除L2上的掩模
    5 对L1加掩模(使用厚干膜或高粘性切割带)桥接由壁创建的腔
    6 浸入Sn(100-250微英寸)
    7 去除L1上的掩模
表11：修整选项ST(银/锡)
    步骤 类型
    1 对L2加掩模(使用厚干膜或高粘性切割带)
    2 浸入Ag(40-50微英寸)
    3 去除L2上的掩模
    4 对L1加掩模(使用厚干膜或高粘性切割带)桥接由壁创建的腔
    5 浸入Sn(100-250微英寸)
    6 去除L1上的掩模
图30是示出了用于形成多个麦克风封装92的面板90的平面图。麦克风封装92以14×24的阵列(或者总共336个麦克风封装)分布在面板90上。可以在面板90上或更小或更大的面板上布置更少或更多的麦克风封装。如在这里结合本发明的各个实施例所描述的，麦克风封装包括多个层，诸如外罩的顶部、底部和侧部、环境屏障、用于连接这些部分的粘合剂层等。为了确保将这些部分结合在一起时它们能够对齐，可将各个部形成为包括多个对齐孔94。为了同时制造几百个或者甚至几千个麦克风，提供诸如在此描述的底层。将换能器、放大器和部件固定在底层上与要制造的各个麦克风相对应的适当位置处。使粘合剂层(诸如干粘合剂片)位于底层上方，并使侧壁部层位于粘合剂层上方。放置另一干粘合剂层，然后是环境屏障层、另一干粘合剂层和顶层。通过诸如施加热和/或压力来激活干粘合剂层。然后使用公知的面板切割和分离技术将面板分离成单个的麦克风组件。
在此描述的麦克风、麦克风封装以及组装方法还使得可以制造多个麦克风组件，诸如麦克风对。在最简单的形式中，在分离过程中可将两个麦克风连接在一起，诸如图31所示的麦克风对96。因此，麦克风对96的各个麦克风98和100是在共用共同的侧壁102的单个封装中的分开的可单独操作的麦克风。另选的是，如在此所描述的，可以在顶部或底部的各个层中形成导电迹线，从而使得可以将多个麦克风电连接。
虽然已示出和描述了特定实施例，但是在不显著脱离本发明的精神的情况下会想到许多变型，本发明保护范围仅由所附权利要求的范围限制。
本申请是于2001年6月21日提交的序列号为09/886,854的共同转让的未决美国申请的部分继续申请，该未决美国申请要求于2000年11月28日提交的序列号为60/253,543的临时专利申请的优先权。出于各种目的，通过在此引用将这些申请完整包括于此。

Claims (29)

1、一种麦克风，该麦克风包括：
多层壁外罩，其限定内室，所述多层壁外罩的第一层是非导电的，所述多层壁外罩的第二层是导电层；
声口，其形成在所述多层壁外罩中；和
换能器，其布置在与所述声口连通的所述室内。
2、根据权利要求2所述的麦克风，该麦克风包括固定到所述外罩的环境屏障，该环境屏障覆盖所述声口。
3、根据权利要求3所述的麦克风，所述环境屏障布置在所述多层壁外罩的多个层之间。
4、根据权利要求2所述的麦克风，所述环境屏障具有声学特性。
5、根据权利要求2所述的麦克风，所述环境屏障提供颗粒屏蔽或湿气屏蔽。
6、根据权利要求2所述的麦克风，所述环境屏障提供光屏蔽。
7、根据权利要求2所述的麦克风，所述环境屏障布置在所述多层壁外罩的用于在该多层外罩内形成电容器的第一导电层和第二导电层之间。
8、根据权利要求7所述的麦克风，所述环境屏障包括聚合材料和烧结金属材料之一。
9、根据权利要求1所述的麦克风，所述外罩包括第二声口，所述第二声口与所述换能器直接声学相连。
10、根据权利要求9所述的麦克风，该麦克风包括固定到所述外罩的第二环境屏障，所述第二环境屏障覆盖所述第二声口。
11、根据权利要求1所述的麦克风，其中，所述多层壁外罩包括固定在一起的底层、侧壁层和顶层。
12、根据权利要求11所述的麦克风，其中，所述底层、侧壁层和顶层通过粘合剂固定在一起。
13、根据权利要求12所述的麦克风，其中，所述粘合剂包括导电粘合剂。
14、根据权利要求12所述的麦克风，其中，所述粘合剂包括经构图的干层粘合剂。
15、根据权利要求12所述的麦克风，其中，所述粘合剂包括非导电的经构图的干层粘合剂和导电粘合剂。
16、根据权利要求11所述的麦克风，其中，所述底层、侧壁层和顶层各自包括导电层，这些导电层是电连接的。
17、根据权利要求11所述的麦克风，其中，所述底壁、侧壁和顶壁中的至少一个被形成为包括选自于由以下部件组成的部件组中的部件：电路、接地面、焊盘、接地盘、电源面、电容器和通孔盘。
18、根据权利要求17所述的麦克风，其中，所述部件形成在所述多层壁外罩的一层内。
19、根据权利要求1所述的麦克风，其中，该麦克风包括形成在所述多层壁外罩内的凹进，所述凹进与所述换能器相邻，创建了背体积。
20、根据权利要求19所述的麦克风，其中，所述凹进形成在所述多层壁外罩的多个层之间。
21、根据权利要求1所述的麦克风，其中，所述室形成背体积并连接到所述换能器的第一面，并且所述声口连接到所述换能器的第二面。
22、根据权利要求1所述的麦克风，其中，所述麦克风包括一对相连的麦克风。
23、一种制造麦克风的方法，该方法包括：
提供第一面板，所述第一面板包括用于对应的多个麦克风的多个底层部；
将换能器布置在所述多个底层部的每一个上；
将第二面板固定到所述第一面板，所述第二面板包括用于所述多个麦克风的多个顶层部，所述顶层部将所述换能器包围在一室内，所述室由所述顶层部和所述底层部限定；以及
分离所述多个麦克风。
24、根据权利要求23所述的方法，该方法包括将第三面板设置在所述第一面板和所述第二面板之间，所述第三面板包括用于所述多个麦克风的多个侧壁部。
25、根据权利要求23所述的方法，其中，各个底层部和各个顶层部包括导电层，所述方法包括将这些导电层电连接。
26、根据权利要求23所述的方法，其中，将所述第二面板固定包括：将干粘合剂层设置在所述第一面板和所述第二面板之间并激活所述干粘合剂层以将所述第一面板固定到所述第二面板。
27、根据权利要求23所述的方法，其中，各个底层包括声口，并且布置所述换能器包括将所述换能器布置得与所述声口相邻。
28、根据权利要求23所述的方法，其中，各个底层或各个顶层包括声口，所述方法包括设置覆盖所述声口的环境屏障。
29、根据权利要求23所述的方法，其中，分离所述多个麦克风包括将所述多个麦克风分离成麦克风对。
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