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CN100424814C - Vacuum treatment device - Google Patents

Vacuum treatment device Download PDF

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CN100424814C
CN100424814C CNB200510087362XA CN200510087362A CN100424814C CN 100424814 C CN100424814 C CN 100424814C CN B200510087362X A CNB200510087362X A CN B200510087362XA CN 200510087362 A CN200510087362 A CN 200510087362A CN 100424814 C CN100424814 C CN 100424814C
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vacuum
chamber
processing
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transfer mechanism
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CN1734711A (en
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田口竜大
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Shimadzu Corp
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    • H10P72/0431
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Abstract

本发明是有关于一种真空处理装置,可谋求真空处理装置的基片移送工程的单纯化。真空处理装置(10)包括负载/卸载室(11)、真空预备加热室(12)及处理室(13)。在真空预备加热室(12)中,设置有正向移送机构(22)、反向移送机构(32)及将基片(W)进行加热的加热器(H)。加热器(H)在正向移送机构(22)侧设置有1个。正向移送机构(21、22)将基片(W)沿正向进行移送,反向移送机构(31、32)将处理完成的基片(W)沿反向进行移送。负载/卸载室(11)为可将大气开放和真空密闭进行切换的室,从负载/卸载室(11)投入基片(W),并经由移送动作(x2~x5)回收基片(W)。

Figure 200510087362

The present invention relates to a vacuum processing device capable of simplifying the substrate transfer process of the vacuum processing device. The vacuum processing device (10) includes a loading/unloading chamber (11), a vacuum preheating chamber (12) and a processing chamber (13). In the vacuum preheating chamber (12), a forward transfer mechanism (22), a reverse transfer mechanism (32) and a heater (H) for heating the substrate (W) are provided. One heater (H) is provided on the forward transfer mechanism (22) side. The forward transfer mechanism (21, 22) transfers the substrate (W) in the forward direction, and the reverse transfer mechanism (31, 32) transfers the processed substrate (W) in the reverse direction. The load/unload chamber (11) is a chamber that can be switched between air-opening and vacuum-tight. The substrate (W) is put in from the load/unload chamber (11), and the substrate (W) is recovered through the transfer operation (x2~x5). .

Figure 200510087362

Description

真空处理装置 Vacuum treatment device

技术领域 technical field

本发明是关于一种在真空环境中进行薄膜形成、蚀刻、热处理等的真空处理装置。The present invention relates to a vacuum processing device for performing thin film formation, etching, heat treatment, etc. in a vacuum environment.

背景技术 Background technique

在由1台装置依次进行不同的复数个真空处理时,作为在真空中将被处理物从处理室搬送到下一处理室的装置,已知有一种具有真空预备加热室和处理室,且在真空预备加热室中设置有复数个基片搬送装置的负载锁定(load lock)式真空装置。该装置采用在真空预备加热室中所设置的个别的2条搬送线在处理室间进行基片的授受的构成(例如参照专利文献1)。When a plurality of different vacuum processes are sequentially performed by one device, as a device for transferring the object to be processed from the processing chamber to the next processing chamber in a vacuum, there is known a device having a vacuum preheating chamber and a processing chamber, and in A load lock type vacuum device with a plurality of substrate transfer devices is installed in the vacuum preheating chamber. This apparatus employs a configuration in which substrates are transferred between processing chambers on two separate transfer lines provided in a vacuum preheating chamber (for example, refer to Patent Document 1).

[专利文献1]日本专利早期公开的特开2001-239144号公报(第2页,图1、图2)[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-239144 (page 2, Fig. 1, Fig. 2 )

在专利文献1的负载锁定式真空装置中,由于是由2条搬运线的某一个向处理室进行基片搬送和从处理室进行基片搬入,所以存在搬送线的搬送动作复杂的问题。In the load-lock vacuum apparatus of Patent Document 1, since the substrate is transported to and loaded from the processing chamber by one of the two transport lines, there is a problem that the transport operation of the transport line is complicated.

发明内容 Contents of the invention

(1)本发明的真空处理装置包括:彼此连结并对被处理物连续地进行真空处理的2个以上的第1~第n的处理室;设置于第1~第(n-1)的各个处理室中,用于将前述被处理物分别向下一处理室进行正向移送的正向移送机构;在第1~第(n-1)的各个处理室中,与正向移送机构分别设置,并从最后进行真空处理的第n处理室,依次经由第(n-1)~第1的各个处理室,将处理完成的被处理物进行反向移送的反向移送机构;在向第n处理室依次移送被处理物时和从第n处理室将处理完成的被处理物进行反向移送时,使第(n-1)处理室的正向移送机构和反向移送机构分别向一个固定的可移送的位置进行移动的驱动机构。(1) The vacuum processing apparatus of the present invention includes: two or more 1st to nth processing chambers that are connected to each other and continuously perform vacuum processing on the object to be processed; In the processing chamber, a forward transfer mechanism for forwardly transferring the aforementioned object to be processed to the next processing chamber respectively; , and from the nth processing chamber that is vacuum-treated at the end, through the (n-1) to the first processing chambers in sequence, the reverse transfer mechanism that transfers the processed object in reverse; When the processing chamber sequentially transfers the object to be processed and when the processed object is reversely transferred from the nth processing chamber, the forward transfer mechanism and the reverse transfer mechanism of the (n-1) processing chamber are fixed to one respectively. The drive mechanism for moving the movable position.

(2)在上述真空处理装置中,利用正向移送机构移送被处理物,且利用反向移送机构,从最后进行真空处理的第n处理室回收处理完成的被处理物。(2) In the above vacuum processing apparatus, the object to be processed is transferred by the forward transfer mechanism, and the processed object is recovered from the nth processing chamber where the vacuum processing is performed last by the reverse transfer mechanism.

(3)在上述真空处理装置中,还配备有可将大气开放和真空密闭进行切换的交接室,用于向第1~第n处理室中最初进行真空处理的第1处理室移送被处理物,并从第1~第n处理室中最后进行真空处理的第n处理室回收处理完成的被处理物。(3) In the above-mentioned vacuum processing apparatus, a transfer chamber capable of being switched between air-opening and vacuum-sealing is further provided, and is used to transfer the object to be processed to the first processing chamber that performs vacuum processing first among the first to n-th processing chambers. , and recover the processed object from the nth processing chamber which is vacuum-treated last among the first to nth processing chambers.

在本发明的真空处理装置中,专门配备有正向移送机构和反向移送机构,所以可谋求基片移送工程的单纯化。In the vacuum processing apparatus of the present invention, since the forward transfer mechanism and the reverse transfer mechanism are specially equipped, the substrate transfer process can be simplified.

附图说明 Description of drawings

图1所示为关于本发明的实施形态的真空处理装置的构成的模式全体构成图。FIG. 1 is a schematic overall configuration diagram showing the configuration of a vacuum processing apparatus according to an embodiment of the present invention.

图2所示为关于本发明的实施形态的真空处理装置的移送装置的模式斜视图。Fig. 2 is a schematic perspective view showing a transfer device of a vacuum processing apparatus according to an embodiment of the present invention.

图3所示为利用关于本发明的实施形态的真空处理装置的基片移送的时序图。Fig. 3 is a timing chart showing substrate transfer using the vacuum processing apparatus according to the embodiment of the present invention.

10:真空处理装置            11:负载/卸载室10: Vacuum processing device 11: Load/unload chamber

11a:排气系统               11b:泄放系统11a: Exhaust System 11b: Bleed System

12:真空预备加热室          12a:排气系统12: Vacuum preparatory heating chamber 12a: Exhaust system

13:处理室                  13a:排气系统13: Processing chamber 13a: Exhaust system

14:保持部                  14a:搬送构件14: Holding part 14a: Transporting components

21、22:向移送机构          22a:升降机构21, 22: To the transfer mechanism 22a: Lifting mechanism

22b:搬送构件               23:框体22b: Moving components 23: Frame

23a:搬入口                 23b:搬出口23a: Import entrance 23b: Exit exit

31、32:反向移送机构        32a:升降机构31, 32: Reverse transfer mechanism 32a: Lifting mechanism

32b:搬送构件               33:框体32b: Moving components 33: Frame

33a:搬入口                 33b:搬出口33a: import entrance 33b: export exit

100:外部室                 G1~G3:门100: External room G1~G3: Door

H:加热器                   P:电极H: Heater P: Electrode

W,W1~W6:基片(被处理物)   x1~x6:移送动作(动作)W, W1~W6: substrate (object to be processed) x1~x6: transfer action (action)

y、y1、y2:升降动作y, y1, y2: lifting action

具体实施方式 Detailed ways

下面,参照图1~图3,对利用本发明的实施形态的真空处理装置进行说明。Next, a vacuum processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3 .

请参阅图1所示,为关于本发明的实施形态的真空处理装置的构成的模式全体构成图。真空处理装置10包括负载/卸载室11、真空预备加热室12、处理室13、正向移送机构21,22及反向移送机构31、32。负载/卸载室11采用可将大气开放和真空密闭进行切换的构成,用于将处理前的基片W向真空预备加热室12进行移送和回收处理完成的基片W。真空预备加热室12和处理室13,在真空处理装置10的工作中总是使内部保持真空状态。负载/卸载室11与排气系统11a和泄放系统11b连接,且真空预备加热室12、处理室13分别与排气系统12a、13a连接。外部室100是与真空处理装置10不同个体而另外构成的,为用于将处理前的基片W进行保管并供给到真空处理装置10,且回收处理完成的基片W的室,内部总是为大气压。Please refer to FIG. 1, which is a schematic overall configuration diagram of a vacuum processing apparatus according to an embodiment of the present invention. The vacuum processing device 10 includes a load/unload chamber 11 , a vacuum preheating chamber 12 , a processing chamber 13 , forward transfer mechanisms 21 , 22 and reverse transfer mechanisms 31 , 32 . The load/unload chamber 11 is configured to be open to the atmosphere and to be vacuum-tight, and is used to transfer the unprocessed substrate W to the vacuum preheating chamber 12 and collect the processed substrate W. The vacuum preheating chamber 12 and the processing chamber 13 are always kept in a vacuum state during the operation of the vacuum processing apparatus 10 . The load/unload chamber 11 is connected to the exhaust system 11a and the discharge system 11b, and the vacuum preheating chamber 12 and the processing chamber 13 are respectively connected to the exhaust systems 12a, 13a. The external chamber 100 is configured separately from the vacuum processing apparatus 10, and is a chamber for storing and supplying unprocessed substrates W to the vacuum processing apparatus 10 and recovering processed substrates W. The interior is always for atmospheric pressure.

在负载/卸载室11中,面向外部室100侧设置有门G1,在负载/卸载室11和真空预备加热室12的边界上,设置有门G2,在真空预备加热室12和处理室13的边界上,设置有门G3。门G1只在将基片W向装置外部搬出搬入时,开放负载/卸载室11,通常为密闭状态。门G2、G3在基片W的处理时分别将室内进行密闭,并在基片W的搬出搬入时分别开放室内。箭形符号x1、x6表示基片W通过门G1的动作,箭形符号x2、x5表示基片W通过门G2的动作,箭形符号x3、x4表示基片W通过门G3的动作。而且,箭形符号y表示基片W在真空预备加热室12内的升降动作。基片W为在真空预备加热室12内被加热,并在处理室13内被施以利用RF等离子的设定处理例如成膜、蚀刻、溅射的被处理物。In the loading/unloading chamber 11, a door G1 is provided on the side facing the external chamber 100, and on the boundary of the loading/unloading chamber 11 and the vacuum preheating chamber 12, a door G2 is provided, and between the vacuum preheating chamber 12 and the processing chamber 13 On the boundary, a gate G3 is provided. The door G1 opens the load/unload chamber 11 only when the substrate W is carried in and out of the apparatus, and is normally in a sealed state. The doors G2 and G3 respectively seal the chamber during the processing of the substrate W, and open the chamber respectively during the loading and unloading of the substrate W. Arrows x1 and x6 represent the movement of the substrate W passing through the gate G1, arrows x2 and x5 represent the movement of the substrate W passing through the gate G2, and arrows x3 and x4 represent the movement of the substrate W passing through the gate G3. Also, an arrow y indicates the movement of the substrate W in the vacuum preliminary heating chamber 12 . The substrate W is an object to be processed that is heated in the vacuum preliminary heating chamber 12 and subjected to predetermined processing by RF plasma such as film formation, etching, and sputtering in the processing chamber 13 .

在负载/卸载室11中,设置有正向移送机构21及反向移送机构31。正向移送机构21利用动作x1将移送到负载/卸载室11的基片W向真空预备加热室12进行移送(动作x2),反向移送机构31从真空预备加热室12搬入处理完成的基片W(动作x5)。In the load/unload chamber 11, a forward transfer mechanism 21 and a reverse transfer mechanism 31 are provided. The forward transfer mechanism 21 uses action x1 to transfer the substrate W transferred to the load/unload chamber 11 to the vacuum preheating chamber 12 (action x2), and the reverse transfer mechanism 31 carries in the processed substrate from the vacuum preheating chamber 12 W (action x5).

在真空预备加热室12中,设置有正向移送机构22、反向移送机构32、用于将基片W进行预备加热的加热器H。加热器H在正向移送机构22侧设置有1个。正向移送机构22利用升降机构22a可沿箭形符号y方向进行移动,反向移送机构32利用升降机构32a可沿箭形符号y方向进行移动。正向移送机构22如图所示,将与正向移送机构21相同高度的位置(也可为预备加热中的位置)作为固定位置,在预备加热结束时,利用升降机构22a进行下降,而将基片W移送到处理室13(动作x3)。反向移送机构32将与反向移送机构31相同高度的位置作为定位置,在等离子处理结束时,利用升降机构32a进行上升,而从处理室13将处理完成的基片W搬入到真空预备加热室12中(动作x4)。In the vacuum preheating chamber 12, a forward transfer mechanism 22, a reverse transfer mechanism 32, and a heater H for preheating the substrate W are provided. One heater H is provided on the forward feed mechanism 22 side. The forward transfer mechanism 22 is movable in the arrow y direction by the elevating mechanism 22a, and the reverse transfer mechanism 32 is movable in the arrow y direction by the elevating mechanism 32a. As shown in the figure, the forward transfer mechanism 22 uses the position at the same height as the forward transfer mechanism 21 (it may also be a position during preliminary heating) as a fixed position, and when the preliminary heating is completed, it is lowered by the lifting mechanism 22a, and the The substrate W is transferred to the processing chamber 13 (action x3). The reverse transfer mechanism 32 takes the position at the same height as the reverse transfer mechanism 31 as a fixed position, and when the plasma processing is finished, it is lifted by the lift mechanism 32a, and the processed substrate W is carried into the vacuum preheating chamber from the processing chamber 13. In chamber 12 (action x4).

即,利用正向移送机构21、22,可将处理前的基片W依次移送到真空预备加热室12、处理室13,并利用反向移送机构31、32,将处理完成的基片W从处理室13经真空预备加热室12而向负载/卸载室11进行反向移送That is, by using the forward transfer mechanisms 21, 22, the unprocessed substrate W can be sequentially transferred to the vacuum preheating chamber 12 and the processing chamber 13, and by using the reverse transfer mechanisms 31, 32, the processed substrate W can be transferred from The processing chamber 13 is reversely transferred to the load/unload chamber 11 through the vacuum preheating chamber 12

在处理室13内,设置有用于进行基片W的等离子处理的RF电极P、用于保持基片W的保持部14。在本实施形态中,保持部14在与正向移送机构22、反向移送机构32进行基片W的交接时,不进行升降而保持固定,但也可采用将正向移送机构22和反向移送机构32进行固定,并使保持部14升降而进行基片W的交接的构成。In the processing chamber 13, an RF electrode P for performing plasma processing on the substrate W, and a holding unit 14 for holding the substrate W are provided. In the present embodiment, when the holding part 14 transfers the substrate W to the forward transfer mechanism 22 and the reverse transfer mechanism 32, it is kept fixed without moving up and down, but it is also possible to use the forward transfer mechanism 22 and the reverse The transfer mechanism 32 is configured to move the holding unit 14 up and down to transfer the substrate W while being fixed.

另外,在真空处理装置10上,还设置有从外部室100将基片W搬入到负载/卸载室11中(动作x1)的搬入装置、从负载/卸载室11将基片W搬出到外部室100中(动作x6)的搬出装置,但省略图示。利用这些装置,可进行基片W向真空处理装置10的投入和基片W从真空处理装置10的回收。而且,当不只是基片W单体的移送,而在将基片W载置于托盘上的情况下一体进行移送时,只要在外部室100回收基片W,并使回收的托盘向外部室100的投入侧(图中为上侧)转回即可。In addition, the vacuum processing apparatus 10 is also provided with a carrying-in device for carrying the substrate W into the load/unload chamber 11 from the external chamber 100 (operation x1), and carrying out the substrate W from the load/unload chamber 11 to the external chamber. 100 (action x6) of the unloading device, but the illustration is omitted. These devices allow loading of the substrate W into the vacuum processing apparatus 10 and recovery of the substrate W from the vacuum processing apparatus 10 . Moreover, when not only transferring the substrate W alone but also transferring the substrate W on a tray as a whole, it is only necessary to collect the substrate W in the external chamber 100 and transfer the collected tray to the external chamber. The input side (upper side in the figure) of 100 can be turned back.

下面,对正向移送机构22和反向移送机构32进行说明。图2为关于本实施形态的真空处理装置的正向移送机构22和反向移送机构32的构成的模式斜视图。正向移送机构22和反向移送机构32分别设置于可升降的框体23和33内,且框体23和33分别利用升降机构22a和32a在真空预备加热室12内进行升降。Next, the forward feed mechanism 22 and the reverse feed mechanism 32 will be described. Fig. 2 is a schematic perspective view showing the configuration of the forward transfer mechanism 22 and the reverse transfer mechanism 32 of the vacuum processing apparatus according to the present embodiment. The forward transfer mechanism 22 and the reverse transfer mechanism 32 are respectively arranged in the liftable frame bodies 23 and 33, and the frame bodies 23 and 33 are raised and lowered in the vacuum preheating chamber 12 by the lift mechanisms 22a and 32a respectively.

正向移送机构22具有复数个搬送构件(搬送辊)22b。搬送构件22b为在预备加热中载置基片W,并在基片移送时围绕轴进行旋转,且沿动作x3将基片W向处理室13进行移送的旋转构件(旋转辊)。而且,在框体23上,设置有用于使基片W通过的开口即搬入口23a、搬出口23b。The forward feed mechanism 22 has a some conveyance member (conveyance roller) 22b. The conveying member 22b is a rotating member (rotating roller) that mounts the substrate W during preheating, rotates around an axis during substrate transfer, and transfers the substrate W to the processing chamber 13 along an operation x3. Further, the frame body 23 is provided with an opening for passing the substrate W, that is, a loading port 23a and a loading port 23b.

反向移送机构32也同样地具有复数个搬送构件(搬送辊)32b。搬送构件32b为围绕轴进行旋转并沿动作x4,将在处理室13内结束了等离子处理的基片W向真空预备处理室12内进行移送的旋转构件(旋转辊)。此时的搬送构件32b的旋转方向,与搬送构件22b的旋转方向相反。而且,在框体33上,设置有用于使基片W通过的开口即搬入口33a、搬出口33b。The reverse transport mechanism 32 also has a plurality of transport members (conveyance rollers) 32b in the same manner. The conveying member 32 b is a rotating member (rotating roller) that rotates around an axis and transfers the substrate W that has been plasma-processed in the processing chamber 13 into the vacuum preprocessing chamber 12 along an operation x4 . The rotation direction of the conveyance member 32b at this time is opposite to the rotation direction of the conveyance member 22b. Further, the frame body 33 is provided with an opening for passing the substrate W, that is, a loading port 33a and a loading port 33b.

保持部14具有可围绕轴进行旋转的搬送构件(搬送辊)14a,搬送构件14a为对利用正向移送机构22所进行的从真空预备加热室12向处理室13的基片移送进行辅助,且对利用反向移送机构32所进行的从处理室13向真空预备加热室12的基片移送进行辅助的旋转构件(旋转辊)。当然,在正向移送和反向移送中,搬送构件14a的旋转方向是相反的。The holding unit 14 has a transport member (transport roller) 14a rotatable around an axis. The transport member 14a assists the transfer of the substrate from the vacuum preliminary heating chamber 12 to the processing chamber 13 by the forward transfer mechanism 22, and A rotating member (rotating roller) that assists substrate transfer from the processing chamber 13 to the vacuum preheating chamber 12 by the reverse transfer mechanism 32 . Of course, the rotation direction of the conveyance member 14a is reversed in forward transfer and reverse transfer.

图2所示的状态,为一种正向移送机构22的搬送构件22b处于与保持部14的搬送构件14a对应的高度位置,较佳为两者处于同一平面上,可将结束了预备加热的基片W向处理室13进行移送的状态。这样,由于将基片W在同一平面上进行移送,所以可防止将基片W移到保持部14上时的掉落等。相反,在利用反向移送机构32将基片W从处理室13向真空预备加热室12内进行移送时,利用升降机构22a使正向移送机构22上升,且利用升降机构32a使反向移送机构32也上升,并进行定位以使反向移送机构32的搬送构件32b处于与保持部14的搬送构件14a对应的高度位置,较佳为两者处于同一平面上。藉此,可将处理完成的基片W在水平面上进行移送。另外,即使为将正向移送机构22和反向移送机构32设置于可升降的1个框体上,并使升降机构也为1个的构成,也可进行上述那样的基片W的正向移送和反向移送。The state shown in Fig. 2 is that the conveying member 22b of a kind of forward conveying mechanism 22 is at the height position corresponding to the conveying member 14a of the holding part 14, preferably both are on the same plane, and the preheating can be finished. The state in which the substrate W is transferred to the processing chamber 13 . In this way, since the substrate W is transferred on the same plane, it is possible to prevent the substrate W from falling or the like when it is transferred to the holding portion 14 . Conversely, when the substrate W is transferred from the processing chamber 13 to the pre-vacuum heating chamber 12 by the reverse transfer mechanism 32, the forward transfer mechanism 22 is raised by the elevating mechanism 22a, and the reverse transfer mechanism is moved by the elevating mechanism 32a. 32 also rises, and is positioned so that the transport member 32b of the reverse transport mechanism 32 is at a height position corresponding to the transport member 14a of the holding portion 14, preferably both are on the same plane. Thereby, the processed substrate W can be transferred on a horizontal plane. In addition, even if the forward transfer mechanism 22 and the reverse transfer mechanism 32 are provided on a frame that can be raised and lowered, and the elevating mechanism is also configured as one, the forward transfer of the substrate W as described above can also be performed. Transfer and reverse transfer.

这样,由于移送的动作x3为正向,动作x4为反向,并分别设置有专用的移送装置,所以搬送构件22b、32b的旋转方向,分别只为设定的一方向。因此,可使基片W的移送控制单纯化。而且,如图所示,由于将正向移送机构22配置在上层,反向移送机构32配置在下层,并使加热器H配置在最上层,所以因加热器H所进行的加热的影响不会波及到反向移送机构32。即,处于动作x4的反向移送过程中的基片W,不受到加热的影响而被回收。另外,正向移送机构22和反向移送机构32的配置,并不限于上下2层,也可为水平方向的2列。在沿水平方向呈2列配置的情况下,将加热器H配置于正向移送机构22侧。Like this, since the action x3 of the transfer is forward, and the action x4 is reverse, and dedicated transfer devices are respectively provided, the rotation directions of the transport members 22b, 32b are only one direction set respectively. Therefore, the transfer control of the substrate W can be simplified. And, as shown in the figure, since the forward transfer mechanism 22 is disposed on the upper level, the reverse transfer mechanism 32 is disposed on the lower level, and the heater H is disposed on the uppermost level, the influence of heating by the heater H will not be affected. Spread to the reverse transfer mechanism 32. That is, the substrate W that is being transferred in the reverse direction in the action x4 is recovered without being affected by the heating. In addition, the arrangement of the forward transfer mechanism 22 and the reverse transfer mechanism 32 is not limited to two upper and lower stages, and may be arranged in two rows in the horizontal direction. When arrange|positioning in 2 rows along the horizontal direction, the heater H is arrange|positioned at the forward transfer mechanism 22 side.

下面,参照图3,对基片W的移送动作进行说明。图3为利用真空处理装置10的基片移送的时序图,图3(a)~(d)表示经过设定时间时的装置内部的状态。另外,为了避免图示变得烦杂,在图3中以基片W和其动作为主体进行图示,且只对图3(a)付以构成构件的符号。而且,对基片W,按照所处理的顺序,付以W1、W2、W3、...这样的序号。Next, the transfer operation of the substrate W will be described with reference to FIG. 3 . FIG. 3 is a timing chart of substrate transfer by the vacuum processing apparatus 10 , and FIGS. 3( a ) to ( d ) show states inside the apparatus when a set time elapses. In addition, in order to avoid complicating the illustration, in FIG. 3 the substrate W and its operation are mainly shown, and only the symbols of the constituent members are attached to FIG. 3( a ). Furthermore, the substrates W are numbered W1, W2, W3, . . . in the order in which they are processed.

参照图3(a),动作x1~x3在图中为向右方前进的移送动作(正向移送),动作x4~x6在图中为向左方前进的移送动作(反向移送)。在动作x1时,将负载/卸载室11的压力调节为大气压后,打开门G1将基片W搬入,并关闭门G1且使负载/卸载室11进行真空排气。在动作x6时,同样也将负载/卸载室11的压力调节为大气压后,打开门G1将基片W搬出,并关闭门G1且使负载/卸载室11进行真空排气。在动作x2、x3、x4、x5时,使负载/卸载室11、真空预备加热室12及处理室13的各室处于大致同等的真空压力下,且不进行压力调节而进行门的关闭。Referring to Fig. 3 (a), action x1~x3 is the transfer action (forward transfer) advancing to the right in the figure, and action x4~x6 is the transfer action (reverse transfer) advancing to the left in the figure. In operation x1, after adjusting the pressure of the load/unload chamber 11 to atmospheric pressure, the door G1 is opened to carry the substrate W in, and the door G1 is closed to evacuate the load/unload chamber 11. In action x6, after adjusting the pressure of the load/unload chamber 11 to atmospheric pressure, the door G1 is opened to carry out the substrate W, and the door G1 is closed to vacuum the load/unload chamber 11. During actions x2, x3, x4, and x5, each chamber of the load/unload chamber 11, the pre-vacuum heating chamber 12, and the processing chamber 13 is under approximately the same vacuum pressure, and the doors are closed without pressure adjustment.

在本实施形态中,为了简单化,使真空预备加热室12相当于最初进行真空处理的处理室,处理室13相当于最后进行真空处理的处理室,并使在真空预备加热室12的预备加热时间和在处理室13的处理时间相同。使它们的1周期的时间为T。In this embodiment, for simplicity, the vacuum preheating chamber 12 is equivalent to the processing chamber for vacuum processing at first, and the processing chamber 13 is equivalent to the processing chamber for vacuum processing at the end, and the preliminary heating in the vacuum preheating chamber 12 is The time is the same as the processing time in the processing chamber 13 . Let the time of one cycle of them be T.

图3(a)表示以下面这样的时序进行移送后的状态。即,使第1基片W1利用动作x2从负载/卸载室11向真空预备加热室12进行移送。在该移送后使负载/卸载室11大气开放,将第2基片W2利用动作x1从外部室100向负载/卸载室11进行移送。使第3基片W3在外部室100待机将图3(a)的状态设定为初期状态t=0。Fig. 3(a) shows the state after the transfer is performed in the following sequence. That is, the first substrate W1 is transferred from the load/unload chamber 11 to the vacuum preheating chamber 12 by operation x2. After this transfer, the load/unload chamber 11 is released to the atmosphere, and the second substrate W2 is transferred from the external chamber 100 to the load/unload chamber 11 by operation x1. The third substrate W3 is placed on standby in the external chamber 100 to set the state of FIG. 3( a ) to the initial state t=0.

图3(b)表示经过了1周期的时间T,当t=T时的真空处理装置10的状态。在该1周期的时间中,被大气开放的负载/卸载室11的真空排气完成。在使正向移送机构22从固定位置沿y2方向下降,并与处理室13的保持部14形成同一高度后,将结束了预备加热处理的基片W1利用动作x3向处理室13进行移送。使正向移送机构22返回固定位置,并使基片W2利用动作x2从负载/卸载室11向真空预备加热室12进行移送,使基片W3利用动作x1从外部室100向负载/卸载室11进行移送,且使第4基片W4在外部室100待机。FIG. 3( b ) shows the state of the vacuum processing apparatus 10 when t=T after one cycle of time T has elapsed. During this one cycle, the evacuation of the load/unload chamber 11 released to the atmosphere is completed. After the forward transfer mechanism 22 is lowered from the fixed position in the y2 direction to be at the same height as the holding part 14 of the processing chamber 13, the substrate W1 that has completed the preliminary heat treatment is transferred to the processing chamber 13 by operation x3. The forward transfer mechanism 22 is returned to the fixed position, and the substrate W2 is transferred from the load/unload chamber 11 to the vacuum preheating chamber 12 by action x2, and the substrate W3 is transferred from the external chamber 100 to the load/unload chamber 11 by action x1 While being transferred, the fourth substrate W4 is kept on standby in the external chamber 100 .

图3(c)表示又经过1周期的时间,当t=2T时的真空处理装置10的状态。在使反向移送机构32从固定位置沿y1方向上升,并与处理室13的保持部14形成同一高度后,将结束了等离子处理的基片W1利用动作x4向真空预备加热室12进行移送。与图3(b)所说明的程序同样地,使基片W2、W3向右方各移送1个室,并使基片W4利用动作x1从外部室100向负载/卸载室11进行移送,且使第5基片W5在外部室100中待机。FIG. 3( c ) shows the state of the vacuum processing apparatus 10 when t=2T after one cycle has elapsed. After the reverse transfer mechanism 32 is raised from the fixed position in the y1 direction to be at the same height as the holding part 14 of the processing chamber 13, the substrate W1 after plasma processing is transferred to the vacuum preheating chamber 12 by operation x4. 3(b), the substrates W2 and W3 are transferred to the right by one chamber each, and the substrate W4 is transferred from the external chamber 100 to the load/unload chamber 11 by operation x1, and The fifth substrate W5 is made to stand by in the external chamber 100 .

图3(d)表示又经过1周期的时间,当t=3T时的真空处理装置10的状态。使反向移送机构32返回固定位置,并将基片W1利用动作x5从真空预备加热室12向负载/卸载室11进行移送。在使反向移送机构32沿y1方向上升,并与处理室13的载物台形成同一高度后,将结束了等离子处理的基片W2利用动作x4向真空预备加热室12进行移送。与图3(b)所说明的程序同样地,使基片W3、W4向右方各移送1个室,并使基片W5利用动作x1从外部室100向负载/卸载室11进行移送,且使第6基片W6在外部室100中待机。FIG. 3( d ) shows the state of the vacuum processing device 10 when t=3T after one cycle has elapsed. The reverse transfer mechanism 32 is returned to the fixed position, and the substrate W1 is transferred from the pre-vacuum heating chamber 12 to the load/unload chamber 11 by operation x5. After the reverse transfer mechanism 32 is raised in the y1 direction to be at the same height as the stage of the processing chamber 13, the substrate W2 after the plasma processing is transferred to the vacuum preheating chamber 12 by operation x4. 3(b), the substrates W3 and W4 are transferred to the right by one chamber each, and the substrate W5 is transferred from the external chamber 100 to the load/unload chamber 11 by operation x1, and The sixth substrate W6 is made to stand by in the external chamber 100 .

下面藉由反复进行上述工程,可将复数个基片W连续地进行处理并回收。本实施形态的真空处理装置,分别专门设置有进行正向的移送的正向移送机构21、22和进行反向的移送的反向移送机构31、32,所以可利用单纯的移送操作(算法)进行基片W的移送和回收,另外也可在同一时序进行基片W的移送和回收。因此,如图3的时序图所示,在负载/卸载室11、真空预备加热室12及处理室总是存在基片W,不产生空闲时间。而且,加热器H没有必要设置在进行反向移送的反向移送机构32中,而只设置在进行正向移送的正向移送机构22中,所以可降低设备费用。Next, by repeating the above process, a plurality of substrates W can be processed and recovered continuously. The vacuum processing apparatus of the present embodiment is specially provided with forward transfer mechanisms 21, 22 for forward transfer and reverse transfer mechanisms 31, 32 for reverse transfer, so simple transfer operations (algorithms) can be used. The transfer and recovery of the substrate W are performed, and the transfer and recovery of the substrate W may be performed at the same time sequence. Therefore, as shown in the timing chart of FIG. 3, the substrate W always exists in the load/unload chamber 11, the pre-vacuum heating chamber 12, and the processing chamber, and no idle time occurs. Furthermore, since the heater H is not necessarily provided in the reverse transfer mechanism 32 for reverse transfer, but is provided only in the forward transfer mechanism 22 for forward transfer, equipment costs can be reduced.

而且,负载/卸载室11为了基片W的搬出搬入,在各周期时间内分别进行1次大气开放和真空排气,但由于该动作在基片W的处理中进行,所以完全不产生处理的空闲时间。因此,当利用1台真空处理装置进行复数种类的真空处理时,可缩短间歇时间。In addition, the load/unload chamber 11 is opened to the atmosphere and evacuated once in each cycle time for loading and unloading the substrate W, but since this operation is performed during the processing of the substrate W, no processing error occurs at all. free time. Therefore, when performing multiple types of vacuum processing with one vacuum processing apparatus, the intermittent time can be shortened.

本实施形态的真空处理装置10为负载/卸载室11、真空预备加热室12、处理室13的3室构成,负载/卸载室11兼具将处理前的基片W向真空预备加热室12进行移送的负载室和从处理室13回收处理完成的基片W的卸载室,所以作为真空处理装置10整体可实现小型化。The vacuum processing apparatus 10 of this embodiment is composed of three chambers: a load/unload chamber 11, a vacuum preheating chamber 12, and a processing chamber 13. Since the loading chamber for transferring and the unloading chamber for recovering the processed substrate W from the processing chamber 13 can realize miniaturization of the vacuum processing apparatus 10 as a whole.

本发明只要不损害其特征即可,并不限定于以上所说明的实施形态。例如,即使省略负载/卸载室11而采用真空预备加热室12和处理室13的2室构成,也可适用本发明,能够谋求进一步的小型化。在该情况下,可使真空预备加热室12进行大气开放和真空排气,并从外部(例如外部室)直接对真空预备加热室12进行基片W的搬出搬入。而且,在最后进行真空处理的处理室13的前部连结2个以上的处理室,而连续进行3种以上的处理的真空处理装置中也可适用本发明。而且,在本实施形态中,将真空预备加热室12和进行等离子处理的处理室13的组合作为例子进行说明,但对除此以外的真空处理的组合也可应用本发明。The present invention is not limited to the embodiments described above as long as the characteristics are not impaired. For example, even if the loading/unloading chamber 11 is omitted and a two-chamber configuration of the vacuum preheating chamber 12 and the processing chamber 13 is adopted, the present invention can be applied, and further miniaturization can be achieved. In this case, the pre-vacuum heating chamber 12 is opened to the atmosphere and evacuated, and the substrate W can be directly carried in and out of the pre-vacuum heating chamber 12 from the outside (for example, an external room). Furthermore, the present invention can also be applied to a vacuum processing apparatus in which two or more processing chambers are connected in front of the processing chamber 13 where vacuum processing is performed last, and three or more types of processing are performed continuously. In addition, in this embodiment, the combination of the vacuum preheating chamber 12 and the processing chamber 13 for performing plasma processing is described as an example, but the present invention can also be applied to other combinations of vacuum processing.

Claims (9)

1. 一种真空处理装置,其特征在于其包括:1. A vacuum treatment device, characterized in that it comprises: 彼此连结并对被处理物连续地进行真空处理的2个以上的第1~第n的处理室;Two or more 1st to nth processing chambers that are connected to each other and continuously perform vacuum processing on the object to be processed; 设置于前述第1~第(n-1)的各个处理室中,用于将前述被处理物分别向下一处理室进行正向移送的正向移送机构;Installed in each of the first to (n-1) processing chambers, a forward transfer mechanism for forwardly transferring the aforementioned objects to be processed to the next processing chamber respectively; 在第1~第(n-1)的各个处理室中,与前述正向移送机构分别设置,并从最后进行真空处理的第n处理室,依次经由第(n-1)~第1的各个处理室,将处理完成的被处理物进行反向移送的反向移送机构;以及Each of the first to (n-1) processing chambers is provided separately from the aforementioned forward transfer mechanism, and passes through each of the (n-1) to first processing chambers sequentially from the nth processing chamber where the vacuum processing is performed last. a processing chamber, a reverse transfer mechanism for reverse transfer of processed objects; and 在向前述第n处理室依次移送前述被处理物时和从前述第n处理室将前述处理完成的被处理物进行反向移送时,使前述第(n-1)处理室的前述正向移送机构和前述反向移送机构分别向一个固定的可移送的位置进行移动的驱动机构。When the aforementioned processed objects are sequentially transferred to the aforementioned nth processing chamber and when the aforementioned processed processed objects are reversely transferred from the aforementioned nth processing chamber, the aforementioned forward transfer of the aforementioned (n-1)th processing chamber The driving mechanism that the mechanism and the aforementioned reverse transfer mechanism move to a fixed and transferable position respectively. 2. 根据权利要求1所述的真空处理装置,其特征在于其包括:2. The vacuum processing device according to claim 1, characterized in that it comprises: 利用前述正向移送机构移送前述被处理物,且利用前述反向移送机构,从前述最后进行真空处理的第n处理室回收前述处理完成的被处理物。The object to be processed is transferred by the forward transfer mechanism, and the object to be processed is recovered from the nth processing chamber where the vacuum treatment is performed last by using the reverse transfer mechanism. 3. 根据权利要求1或2所述的真空处理装置,其特征在于其还配备有可将大气开放和真空密闭进行切换的交接室,用于向前述第1~第n处理室中最初进行真空处理的前述第1处理室移送前述被处理物,并从前述第1~第n处理室中最后进行真空处理的第n处理室回收前述处理完成的被处理物。3. The vacuum processing device according to claim 1 or 2, characterized in that it is also equipped with a transfer chamber that can switch between open atmosphere and vacuum airtight, and is used to initially carry out vacuum in the aforementioned 1st to nth processing chambers. The first processing chamber for processing transfers the object to be processed, and recovers the processed object from the nth processing chamber that is vacuum-processed last among the first to nth processing chambers. 4. 根据权利要求1或2所述的真空处理装置,其特征在于其中所述的处理室包括真空预备加热室,用于在真空状态下对前述被处理物进行加热。4. The vacuum processing device according to claim 1 or 2, wherein the processing chamber includes a vacuum preheating chamber for heating the aforementioned object to be processed in a vacuum state. 5. 根据权利要求4所述的真空处理装置,其特征在于其中所述的真空预备加热室具备加热器,且该加热器仅配置于前述正向移送机构和前述反向移送机构中的其中的一侧。5. The vacuum processing apparatus according to claim 4, wherein said vacuum preheating chamber is equipped with a heater, and the heater is only arranged in one of the aforementioned forward transfer mechanism and the aforementioned reverse transfer mechanism. side. 6. 根据权利要求1或2所述的真空处理装置,其特征在于其中所述的处理室包括电浆处理室,用于对该电浆处理室中的前述被处理物进行电浆处理。6. The vacuum processing apparatus according to claim 1 or 2, wherein the processing chamber includes a plasma processing chamber for performing plasma processing on the aforementioned object to be processed in the plasma processing chamber. 7. 根据权利要求1或2所述的真空处理装置,其特征在于其中所述的正向移送机构和反向移送机构为采用上下2层配置的方式配置于前述处理室中。7. The vacuum processing device according to claim 1 or 2, wherein the forward transfer mechanism and the reverse transfer mechanism are disposed in the aforementioned processing chamber in a manner of upper and lower layers. 8. 根据权利要求1或2所述的真空处理装置,其特征在于其中所述的正向移送机构和反向移送机构为采用在水平方向2列配置的方式配置于前述处理室中。8. The vacuum processing apparatus according to claim 1 or 2, wherein the forward transfer mechanism and the reverse transfer mechanism are arranged in the aforementioned processing chamber in a manner arranged in two rows in the horizontal direction. 9. 根据权利要求1或2所述的真空处理装置,其特征在于其中所述的真空处理装置连接至外部室,其中该外部室用于供给前述被处理物至前述真空处理装置,并由前述真空处理装置回收前述处理完成的被处理物。9. The vacuum processing device according to claim 1 or 2, wherein the vacuum processing device is connected to an external chamber, wherein the external chamber is used to supply the aforementioned processed objects to the aforementioned vacuum processing device, and is controlled by the aforementioned The vacuum treatment device recycles the treated objects after the aforementioned treatment.
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