CN100424814C - Vacuum treatment device - Google Patents
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- CN100424814C CN100424814C CNB200510087362XA CN200510087362A CN100424814C CN 100424814 C CN100424814 C CN 100424814C CN B200510087362X A CNB200510087362X A CN B200510087362XA CN 200510087362 A CN200510087362 A CN 200510087362A CN 100424814 C CN100424814 C CN 100424814C
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Abstract
本发明是有关于一种真空处理装置,可谋求真空处理装置的基片移送工程的单纯化。真空处理装置(10)包括负载/卸载室(11)、真空预备加热室(12)及处理室(13)。在真空预备加热室(12)中,设置有正向移送机构(22)、反向移送机构(32)及将基片(W)进行加热的加热器(H)。加热器(H)在正向移送机构(22)侧设置有1个。正向移送机构(21、22)将基片(W)沿正向进行移送,反向移送机构(31、32)将处理完成的基片(W)沿反向进行移送。负载/卸载室(11)为可将大气开放和真空密闭进行切换的室,从负载/卸载室(11)投入基片(W),并经由移送动作(x2~x5)回收基片(W)。
The present invention relates to a vacuum processing device capable of simplifying the substrate transfer process of the vacuum processing device. The vacuum processing device (10) includes a loading/unloading chamber (11), a vacuum preheating chamber (12) and a processing chamber (13). In the vacuum preheating chamber (12), a forward transfer mechanism (22), a reverse transfer mechanism (32) and a heater (H) for heating the substrate (W) are provided. One heater (H) is provided on the forward transfer mechanism (22) side. The forward transfer mechanism (21, 22) transfers the substrate (W) in the forward direction, and the reverse transfer mechanism (31, 32) transfers the processed substrate (W) in the reverse direction. The load/unload chamber (11) is a chamber that can be switched between air-opening and vacuum-tight. The substrate (W) is put in from the load/unload chamber (11), and the substrate (W) is recovered through the transfer operation (x2~x5). .
Description
技术领域 technical field
本发明是关于一种在真空环境中进行薄膜形成、蚀刻、热处理等的真空处理装置。The present invention relates to a vacuum processing device for performing thin film formation, etching, heat treatment, etc. in a vacuum environment.
背景技术 Background technique
在由1台装置依次进行不同的复数个真空处理时,作为在真空中将被处理物从处理室搬送到下一处理室的装置,已知有一种具有真空预备加热室和处理室,且在真空预备加热室中设置有复数个基片搬送装置的负载锁定(load lock)式真空装置。该装置采用在真空预备加热室中所设置的个别的2条搬送线在处理室间进行基片的授受的构成(例如参照专利文献1)。When a plurality of different vacuum processes are sequentially performed by one device, as a device for transferring the object to be processed from the processing chamber to the next processing chamber in a vacuum, there is known a device having a vacuum preheating chamber and a processing chamber, and in A load lock type vacuum device with a plurality of substrate transfer devices is installed in the vacuum preheating chamber. This apparatus employs a configuration in which substrates are transferred between processing chambers on two separate transfer lines provided in a vacuum preheating chamber (for example, refer to Patent Document 1).
[专利文献1]日本专利早期公开的特开2001-239144号公报(第2页,图1、图2)[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-239144 (
在专利文献1的负载锁定式真空装置中,由于是由2条搬运线的某一个向处理室进行基片搬送和从处理室进行基片搬入,所以存在搬送线的搬送动作复杂的问题。In the load-lock vacuum apparatus of
发明内容 Contents of the invention
(1)本发明的真空处理装置包括:彼此连结并对被处理物连续地进行真空处理的2个以上的第1~第n的处理室;设置于第1~第(n-1)的各个处理室中,用于将前述被处理物分别向下一处理室进行正向移送的正向移送机构;在第1~第(n-1)的各个处理室中,与正向移送机构分别设置,并从最后进行真空处理的第n处理室,依次经由第(n-1)~第1的各个处理室,将处理完成的被处理物进行反向移送的反向移送机构;在向第n处理室依次移送被处理物时和从第n处理室将处理完成的被处理物进行反向移送时,使第(n-1)处理室的正向移送机构和反向移送机构分别向一个固定的可移送的位置进行移动的驱动机构。(1) The vacuum processing apparatus of the present invention includes: two or more 1st to nth processing chambers that are connected to each other and continuously perform vacuum processing on the object to be processed; In the processing chamber, a forward transfer mechanism for forwardly transferring the aforementioned object to be processed to the next processing chamber respectively; , and from the nth processing chamber that is vacuum-treated at the end, through the (n-1) to the first processing chambers in sequence, the reverse transfer mechanism that transfers the processed object in reverse; When the processing chamber sequentially transfers the object to be processed and when the processed object is reversely transferred from the nth processing chamber, the forward transfer mechanism and the reverse transfer mechanism of the (n-1) processing chamber are fixed to one respectively. The drive mechanism for moving the movable position.
(2)在上述真空处理装置中,利用正向移送机构移送被处理物,且利用反向移送机构,从最后进行真空处理的第n处理室回收处理完成的被处理物。(2) In the above vacuum processing apparatus, the object to be processed is transferred by the forward transfer mechanism, and the processed object is recovered from the nth processing chamber where the vacuum processing is performed last by the reverse transfer mechanism.
(3)在上述真空处理装置中,还配备有可将大气开放和真空密闭进行切换的交接室,用于向第1~第n处理室中最初进行真空处理的第1处理室移送被处理物,并从第1~第n处理室中最后进行真空处理的第n处理室回收处理完成的被处理物。(3) In the above-mentioned vacuum processing apparatus, a transfer chamber capable of being switched between air-opening and vacuum-sealing is further provided, and is used to transfer the object to be processed to the first processing chamber that performs vacuum processing first among the first to n-th processing chambers. , and recover the processed object from the nth processing chamber which is vacuum-treated last among the first to nth processing chambers.
在本发明的真空处理装置中,专门配备有正向移送机构和反向移送机构,所以可谋求基片移送工程的单纯化。In the vacuum processing apparatus of the present invention, since the forward transfer mechanism and the reverse transfer mechanism are specially equipped, the substrate transfer process can be simplified.
附图说明 Description of drawings
图1所示为关于本发明的实施形态的真空处理装置的构成的模式全体构成图。FIG. 1 is a schematic overall configuration diagram showing the configuration of a vacuum processing apparatus according to an embodiment of the present invention.
图2所示为关于本发明的实施形态的真空处理装置的移送装置的模式斜视图。Fig. 2 is a schematic perspective view showing a transfer device of a vacuum processing apparatus according to an embodiment of the present invention.
图3所示为利用关于本发明的实施形态的真空处理装置的基片移送的时序图。Fig. 3 is a timing chart showing substrate transfer using the vacuum processing apparatus according to the embodiment of the present invention.
10:真空处理装置 11:负载/卸载室10: Vacuum processing device 11: Load/unload chamber
11a:排气系统 11b:泄放系统11a:
12:真空预备加热室 12a:排气系统12: Vacuum
13:处理室 13a:排气系统13:
14:保持部 14a:搬送构件14: Holding
21、22:向移送机构 22a:升降机构21, 22: To the
22b:搬送构件 23:框体22b: Moving components 23: Frame
23a:搬入口 23b:搬出口23a:
31、32:反向移送机构 32a:升降机构31, 32:
32b:搬送构件 33:框体32b: Moving components 33: Frame
33a:搬入口 33b:搬出口33a:
100:外部室 G1~G3:门100: External room G1~G3: Door
H:加热器 P:电极H: Heater P: Electrode
W,W1~W6:基片(被处理物) x1~x6:移送动作(动作)W, W1~W6: substrate (object to be processed) x1~x6: transfer action (action)
y、y1、y2:升降动作y, y1, y2: lifting action
具体实施方式 Detailed ways
下面,参照图1~图3,对利用本发明的实施形态的真空处理装置进行说明。Next, a vacuum processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3 .
请参阅图1所示,为关于本发明的实施形态的真空处理装置的构成的模式全体构成图。真空处理装置10包括负载/卸载室11、真空预备加热室12、处理室13、正向移送机构21,22及反向移送机构31、32。负载/卸载室11采用可将大气开放和真空密闭进行切换的构成,用于将处理前的基片W向真空预备加热室12进行移送和回收处理完成的基片W。真空预备加热室12和处理室13,在真空处理装置10的工作中总是使内部保持真空状态。负载/卸载室11与排气系统11a和泄放系统11b连接,且真空预备加热室12、处理室13分别与排气系统12a、13a连接。外部室100是与真空处理装置10不同个体而另外构成的,为用于将处理前的基片W进行保管并供给到真空处理装置10,且回收处理完成的基片W的室,内部总是为大气压。Please refer to FIG. 1, which is a schematic overall configuration diagram of a vacuum processing apparatus according to an embodiment of the present invention. The
在负载/卸载室11中,面向外部室100侧设置有门G1,在负载/卸载室11和真空预备加热室12的边界上,设置有门G2,在真空预备加热室12和处理室13的边界上,设置有门G3。门G1只在将基片W向装置外部搬出搬入时,开放负载/卸载室11,通常为密闭状态。门G2、G3在基片W的处理时分别将室内进行密闭,并在基片W的搬出搬入时分别开放室内。箭形符号x1、x6表示基片W通过门G1的动作,箭形符号x2、x5表示基片W通过门G2的动作,箭形符号x3、x4表示基片W通过门G3的动作。而且,箭形符号y表示基片W在真空预备加热室12内的升降动作。基片W为在真空预备加热室12内被加热,并在处理室13内被施以利用RF等离子的设定处理例如成膜、蚀刻、溅射的被处理物。In the loading/
在负载/卸载室11中,设置有正向移送机构21及反向移送机构31。正向移送机构21利用动作x1将移送到负载/卸载室11的基片W向真空预备加热室12进行移送(动作x2),反向移送机构31从真空预备加热室12搬入处理完成的基片W(动作x5)。In the load/
在真空预备加热室12中,设置有正向移送机构22、反向移送机构32、用于将基片W进行预备加热的加热器H。加热器H在正向移送机构22侧设置有1个。正向移送机构22利用升降机构22a可沿箭形符号y方向进行移动,反向移送机构32利用升降机构32a可沿箭形符号y方向进行移动。正向移送机构22如图所示,将与正向移送机构21相同高度的位置(也可为预备加热中的位置)作为固定位置,在预备加热结束时,利用升降机构22a进行下降,而将基片W移送到处理室13(动作x3)。反向移送机构32将与反向移送机构31相同高度的位置作为定位置,在等离子处理结束时,利用升降机构32a进行上升,而从处理室13将处理完成的基片W搬入到真空预备加热室12中(动作x4)。In the
即,利用正向移送机构21、22,可将处理前的基片W依次移送到真空预备加热室12、处理室13,并利用反向移送机构31、32,将处理完成的基片W从处理室13经真空预备加热室12而向负载/卸载室11进行反向移送That is, by using the
在处理室13内,设置有用于进行基片W的等离子处理的RF电极P、用于保持基片W的保持部14。在本实施形态中,保持部14在与正向移送机构22、反向移送机构32进行基片W的交接时,不进行升降而保持固定,但也可采用将正向移送机构22和反向移送机构32进行固定,并使保持部14升降而进行基片W的交接的构成。In the
另外,在真空处理装置10上,还设置有从外部室100将基片W搬入到负载/卸载室11中(动作x1)的搬入装置、从负载/卸载室11将基片W搬出到外部室100中(动作x6)的搬出装置,但省略图示。利用这些装置,可进行基片W向真空处理装置10的投入和基片W从真空处理装置10的回收。而且,当不只是基片W单体的移送,而在将基片W载置于托盘上的情况下一体进行移送时,只要在外部室100回收基片W,并使回收的托盘向外部室100的投入侧(图中为上侧)转回即可。In addition, the
下面,对正向移送机构22和反向移送机构32进行说明。图2为关于本实施形态的真空处理装置的正向移送机构22和反向移送机构32的构成的模式斜视图。正向移送机构22和反向移送机构32分别设置于可升降的框体23和33内,且框体23和33分别利用升降机构22a和32a在真空预备加热室12内进行升降。Next, the
正向移送机构22具有复数个搬送构件(搬送辊)22b。搬送构件22b为在预备加热中载置基片W,并在基片移送时围绕轴进行旋转,且沿动作x3将基片W向处理室13进行移送的旋转构件(旋转辊)。而且,在框体23上,设置有用于使基片W通过的开口即搬入口23a、搬出口23b。The
反向移送机构32也同样地具有复数个搬送构件(搬送辊)32b。搬送构件32b为围绕轴进行旋转并沿动作x4,将在处理室13内结束了等离子处理的基片W向真空预备处理室12内进行移送的旋转构件(旋转辊)。此时的搬送构件32b的旋转方向,与搬送构件22b的旋转方向相反。而且,在框体33上,设置有用于使基片W通过的开口即搬入口33a、搬出口33b。The
保持部14具有可围绕轴进行旋转的搬送构件(搬送辊)14a,搬送构件14a为对利用正向移送机构22所进行的从真空预备加热室12向处理室13的基片移送进行辅助,且对利用反向移送机构32所进行的从处理室13向真空预备加热室12的基片移送进行辅助的旋转构件(旋转辊)。当然,在正向移送和反向移送中,搬送构件14a的旋转方向是相反的。The holding
图2所示的状态,为一种正向移送机构22的搬送构件22b处于与保持部14的搬送构件14a对应的高度位置,较佳为两者处于同一平面上,可将结束了预备加热的基片W向处理室13进行移送的状态。这样,由于将基片W在同一平面上进行移送,所以可防止将基片W移到保持部14上时的掉落等。相反,在利用反向移送机构32将基片W从处理室13向真空预备加热室12内进行移送时,利用升降机构22a使正向移送机构22上升,且利用升降机构32a使反向移送机构32也上升,并进行定位以使反向移送机构32的搬送构件32b处于与保持部14的搬送构件14a对应的高度位置,较佳为两者处于同一平面上。藉此,可将处理完成的基片W在水平面上进行移送。另外,即使为将正向移送机构22和反向移送机构32设置于可升降的1个框体上,并使升降机构也为1个的构成,也可进行上述那样的基片W的正向移送和反向移送。The state shown in Fig. 2 is that the conveying
这样,由于移送的动作x3为正向,动作x4为反向,并分别设置有专用的移送装置,所以搬送构件22b、32b的旋转方向,分别只为设定的一方向。因此,可使基片W的移送控制单纯化。而且,如图所示,由于将正向移送机构22配置在上层,反向移送机构32配置在下层,并使加热器H配置在最上层,所以因加热器H所进行的加热的影响不会波及到反向移送机构32。即,处于动作x4的反向移送过程中的基片W,不受到加热的影响而被回收。另外,正向移送机构22和反向移送机构32的配置,并不限于上下2层,也可为水平方向的2列。在沿水平方向呈2列配置的情况下,将加热器H配置于正向移送机构22侧。Like this, since the action x3 of the transfer is forward, and the action x4 is reverse, and dedicated transfer devices are respectively provided, the rotation directions of the
下面,参照图3,对基片W的移送动作进行说明。图3为利用真空处理装置10的基片移送的时序图,图3(a)~(d)表示经过设定时间时的装置内部的状态。另外,为了避免图示变得烦杂,在图3中以基片W和其动作为主体进行图示,且只对图3(a)付以构成构件的符号。而且,对基片W,按照所处理的顺序,付以W1、W2、W3、...这样的序号。Next, the transfer operation of the substrate W will be described with reference to FIG. 3 . FIG. 3 is a timing chart of substrate transfer by the
参照图3(a),动作x1~x3在图中为向右方前进的移送动作(正向移送),动作x4~x6在图中为向左方前进的移送动作(反向移送)。在动作x1时,将负载/卸载室11的压力调节为大气压后,打开门G1将基片W搬入,并关闭门G1且使负载/卸载室11进行真空排气。在动作x6时,同样也将负载/卸载室11的压力调节为大气压后,打开门G1将基片W搬出,并关闭门G1且使负载/卸载室11进行真空排气。在动作x2、x3、x4、x5时,使负载/卸载室11、真空预备加热室12及处理室13的各室处于大致同等的真空压力下,且不进行压力调节而进行门的关闭。Referring to Fig. 3 (a), action x1~x3 is the transfer action (forward transfer) advancing to the right in the figure, and action x4~x6 is the transfer action (reverse transfer) advancing to the left in the figure. In operation x1, after adjusting the pressure of the load/unload
在本实施形态中,为了简单化,使真空预备加热室12相当于最初进行真空处理的处理室,处理室13相当于最后进行真空处理的处理室,并使在真空预备加热室12的预备加热时间和在处理室13的处理时间相同。使它们的1周期的时间为T。In this embodiment, for simplicity, the
图3(a)表示以下面这样的时序进行移送后的状态。即,使第1基片W1利用动作x2从负载/卸载室11向真空预备加热室12进行移送。在该移送后使负载/卸载室11大气开放,将第2基片W2利用动作x1从外部室100向负载/卸载室11进行移送。使第3基片W3在外部室100待机将图3(a)的状态设定为初期状态t=0。Fig. 3(a) shows the state after the transfer is performed in the following sequence. That is, the first substrate W1 is transferred from the load/unload
图3(b)表示经过了1周期的时间T,当t=T时的真空处理装置10的状态。在该1周期的时间中,被大气开放的负载/卸载室11的真空排气完成。在使正向移送机构22从固定位置沿y2方向下降,并与处理室13的保持部14形成同一高度后,将结束了预备加热处理的基片W1利用动作x3向处理室13进行移送。使正向移送机构22返回固定位置,并使基片W2利用动作x2从负载/卸载室11向真空预备加热室12进行移送,使基片W3利用动作x1从外部室100向负载/卸载室11进行移送,且使第4基片W4在外部室100待机。FIG. 3( b ) shows the state of the
图3(c)表示又经过1周期的时间,当t=2T时的真空处理装置10的状态。在使反向移送机构32从固定位置沿y1方向上升,并与处理室13的保持部14形成同一高度后,将结束了等离子处理的基片W1利用动作x4向真空预备加热室12进行移送。与图3(b)所说明的程序同样地,使基片W2、W3向右方各移送1个室,并使基片W4利用动作x1从外部室100向负载/卸载室11进行移送,且使第5基片W5在外部室100中待机。FIG. 3( c ) shows the state of the
图3(d)表示又经过1周期的时间,当t=3T时的真空处理装置10的状态。使反向移送机构32返回固定位置,并将基片W1利用动作x5从真空预备加热室12向负载/卸载室11进行移送。在使反向移送机构32沿y1方向上升,并与处理室13的载物台形成同一高度后,将结束了等离子处理的基片W2利用动作x4向真空预备加热室12进行移送。与图3(b)所说明的程序同样地,使基片W3、W4向右方各移送1个室,并使基片W5利用动作x1从外部室100向负载/卸载室11进行移送,且使第6基片W6在外部室100中待机。FIG. 3( d ) shows the state of the
下面藉由反复进行上述工程,可将复数个基片W连续地进行处理并回收。本实施形态的真空处理装置,分别专门设置有进行正向的移送的正向移送机构21、22和进行反向的移送的反向移送机构31、32,所以可利用单纯的移送操作(算法)进行基片W的移送和回收,另外也可在同一时序进行基片W的移送和回收。因此,如图3的时序图所示,在负载/卸载室11、真空预备加热室12及处理室总是存在基片W,不产生空闲时间。而且,加热器H没有必要设置在进行反向移送的反向移送机构32中,而只设置在进行正向移送的正向移送机构22中,所以可降低设备费用。Next, by repeating the above process, a plurality of substrates W can be processed and recovered continuously. The vacuum processing apparatus of the present embodiment is specially provided with
而且,负载/卸载室11为了基片W的搬出搬入,在各周期时间内分别进行1次大气开放和真空排气,但由于该动作在基片W的处理中进行,所以完全不产生处理的空闲时间。因此,当利用1台真空处理装置进行复数种类的真空处理时,可缩短间歇时间。In addition, the load/unload
本实施形态的真空处理装置10为负载/卸载室11、真空预备加热室12、处理室13的3室构成,负载/卸载室11兼具将处理前的基片W向真空预备加热室12进行移送的负载室和从处理室13回收处理完成的基片W的卸载室,所以作为真空处理装置10整体可实现小型化。The
本发明只要不损害其特征即可,并不限定于以上所说明的实施形态。例如,即使省略负载/卸载室11而采用真空预备加热室12和处理室13的2室构成,也可适用本发明,能够谋求进一步的小型化。在该情况下,可使真空预备加热室12进行大气开放和真空排气,并从外部(例如外部室)直接对真空预备加热室12进行基片W的搬出搬入。而且,在最后进行真空处理的处理室13的前部连结2个以上的处理室,而连续进行3种以上的处理的真空处理装置中也可适用本发明。而且,在本实施形态中,将真空预备加热室12和进行等离子处理的处理室13的组合作为例子进行说明,但对除此以外的真空处理的组合也可应用本发明。The present invention is not limited to the embodiments described above as long as the characteristics are not impaired. For example, even if the loading/
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| JP2004234110A JP2006054284A (en) | 2004-08-11 | 2004-08-11 | Vacuum processing apparatus |
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| JP2004-234110 | 2004-08-11 |
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| KR (1) | KR100619448B1 (en) |
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| JP4280785B2 (en) * | 2007-07-13 | 2009-06-17 | シャープ株式会社 | Vacuum processing apparatus and vacuum processing method |
| JP4991004B2 (en) * | 2008-02-28 | 2012-08-01 | 株式会社アルバック | Conveying apparatus and vacuum processing apparatus |
| EP2299498B1 (en) * | 2008-06-06 | 2013-12-11 | Ulvac, Inc. | Thin-film solar cell manufacturing apparatus |
| EP2299477B1 (en) * | 2008-06-06 | 2013-08-28 | Ulvac, Inc. | Thin- film solar cell manufacturing apparatus |
| KR101487382B1 (en) * | 2008-10-22 | 2015-01-29 | 주식회사 원익아이피에스 | In-line semiconductor manufacturing system |
| KR20110000309A (en) * | 2009-06-26 | 2011-01-03 | 주식회사 미뉴타텍 | Substrate vacuum forming apparatus and vacuum forming method |
| KR101071344B1 (en) | 2009-07-22 | 2011-10-07 | 세메스 주식회사 | Apparatus and method for processing substrate |
| TWI417984B (en) | 2009-12-10 | 2013-12-01 | 沃博提克Lt太陽公司 | Multi-directional linear processing device for automatic sorting |
| JP5469507B2 (en) * | 2010-03-31 | 2014-04-16 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| CN101882565B (en) * | 2010-06-03 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Online processing equipment |
| US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
| KR102019779B1 (en) * | 2011-11-15 | 2019-09-09 | 세메스 주식회사 | Substrate treating apparatus |
| JP6040685B2 (en) * | 2012-09-28 | 2016-12-07 | Tdk株式会社 | Film forming apparatus, method for manufacturing film processed product, and film forming method |
| KR102514121B1 (en) | 2021-03-08 | 2023-03-23 | 송필남 | Golf Putter With Adjustable Center of Gravity |
| TWI900378B (en) * | 2024-12-24 | 2025-10-01 | 瑞礱科技股份有限公司 | Vertical vacuum heating process conveying mechanism and operating method thereof |
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| TWI309224B (en) | 2009-05-01 |
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