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TWI900378B - Vertical vacuum heating process conveying mechanism and operating method thereof - Google Patents

Vertical vacuum heating process conveying mechanism and operating method thereof

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Publication number
TWI900378B
TWI900378B TW113150505A TW113150505A TWI900378B TW I900378 B TWI900378 B TW I900378B TW 113150505 A TW113150505 A TW 113150505A TW 113150505 A TW113150505 A TW 113150505A TW I900378 B TWI900378 B TW I900378B
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Taiwan
Prior art keywords
carrier
placement area
vacuum heating
heating process
vertical
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TW113150505A
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Chinese (zh)
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何焱騰
許摶扶
吳家興
陳乃榕
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瑞礱科技股份有限公司
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Priority to TW113150505A priority Critical patent/TWI900378B/en
Application granted granted Critical
Publication of TWI900378B publication Critical patent/TWI900378B/en

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Abstract

一種垂直式真空加熱製程傳輸機構包括垂直升降腔體室以及製程腔體室。垂直升降腔體室具有垂直升降台。垂直升降台的第一放置區藉由進出閘板閥接收第一承載件,且垂直升降台接著移動使垂直升降台的第二放置區接著藉由進出閘板閥接收第二承載件。製程腔體室接收第一承載件並進行真空加熱製程。在第一承載件中的晶圓片完成真空加熱製程後,第一承載件於第一放置區進行冷卻降溫。當第一承載件於第一放置區未破真空進行冷卻降溫時,製程腔體室接收第二承載件並對第二承載件中的晶圓片進行真空加熱製程。A vertical vacuum heating process transfer mechanism includes a vertical lifting chamber and a process chamber. The vertical lifting chamber has a vertical lifting platform. The first placement area of the vertical lifting platform receives a first carrier through an in-and-out gate valve, and the vertical lifting platform then moves so that the second placement area of the vertical lifting platform then receives a second carrier through an in-and-out gate valve. The process chamber receives the first carrier and performs a vacuum heating process. After the wafer in the first carrier completes the vacuum heating process, the first carrier is cooled in the first placement area. When the first carrier is cooled in the first placement area without breaking the vacuum, the process chamber receives the second carrier and performs a vacuum heating process on the wafer in the second carrier.

Description

垂直式真空加熱製程傳輸機構及其操作方法Vertical vacuum heating process transmission mechanism and operation method thereof

本揭露內容係關於一種傳輸機構以及傳輸機構的操作方法,且特別是一種使用垂直升降台的第一放置區與第二放置區以及製程腔體室的分工配置來縮短晶圓片製程時間的垂直式真空加熱製程傳輸機構及其操作方法。The present disclosure relates to a transfer mechanism and a method for operating the transfer mechanism, and in particular to a vertical vacuum heating process transfer mechanism and a method for operating the transfer mechanism that shortens wafer process time by utilizing a first placement area and a second placement area of a vertical lifting platform and a division of labor configuration of a process chamber.

一般而言,作業人員通常會將裝有晶圓片的承載件輸送至加熱爐管中以對承載件中的晶圓片進行生長製程,例如化學氣相沉積(Chemical Vapor Deposition,CVD)製程。然而,在晶圓片完成生長製程後,裝有晶圓片的承載件需要在連接加熱爐管的氣體腔室進行冷卻降溫。此冷卻降溫的等待時間約為三至四小時。經過生長製程後的承載件在氣體腔室中等待本身溫度回到室溫後才能夠被取出,因此大量佔用了加熱爐管與氣體腔室的作業時段。也就是說,加熱爐管需要在第一組承載件的溫度達到室溫被送出氣體腔室後,才能再接著接收下一組準備進行製程的第二組承載件。這樣的製造流程不僅花費大量時間在等待晶圓片的冷卻降溫上,同時也降低了晶圓片的出貨速度。Generally speaking, operators usually transport carriers containing wafers into a heating furnace tube to perform a growth process on the wafers in the carrier, such as a Chemical Vapor Deposition (CVD) process. However, after the wafers complete the growth process, the carriers containing the wafers need to be cooled down in a gas chamber connected to the heating furnace tube. The waiting time for this cooling down is about three to four hours. The carriers that have undergone the growth process have to wait in the gas chamber for their own temperature to return to room temperature before they can be taken out, thus occupying a large amount of the operating time of the heating furnace tube and the gas chamber. In other words, the heating furnace tube needs to wait until the temperature of the first set of carriers reaches room temperature and is sent out of the gas chamber before it can receive the next set of carriers ready for the process. This manufacturing process not only takes a lot of time waiting for the wafers to cool down, but also slows down the shipment of wafers.

本揭露之一技術態樣為一種垂直式真空加熱製程傳輸機構,其能夠在第一晶圓片完成真空加熱製程於垂直升降台的第一放置區進行冷卻降溫的時候,同時使垂直升降台的第二放置區將第二晶圓片傳輸至製程腔體室以進行真空加熱製程,因此可縮短製造多組晶圓片的冷卻降溫等待時間以及進行真空加熱製程的時間。One of the technical aspects disclosed herein is a vertical vacuum heating process transfer mechanism, which can simultaneously transfer the second wafer from the second placement area of the vertical lifting platform to the process chamber for vacuum heating process when the first wafer completes the vacuum heating process and is cooled in the first placement area of the vertical lifting platform. Therefore, the cooling waiting time and the time for performing the vacuum heating process can be shortened for manufacturing multiple groups of wafers.

本揭露的實施例提供一種垂直式真空加熱製程傳輸機構,此垂直式真空加熱製程傳輸機構依序輸送第一承載件、第二承載件以及第三承載件,且包括垂直升降腔體室以及製程腔體室。垂直升降腔體室具有垂直升降台、設置於垂直升降台之一側的進出閘板閥以及設置於垂直升降台之另一側的製程閘板閥,其中垂直升降台包括第一放置區以及鄰近第一放置區的第二放置區,第一放置區與第二放置區在第一方向上對齊,其中第一放置區配置以藉由進出閘板閥接收第一承載件,且垂直升降台配置以移動使第二放置區接著藉由進出閘板閥接收第二承載件。製程腔體室連接設置於垂直升降腔體室的製程閘板閥,且配置以接收第一承載件並對第一承載件中的第一晶圓片進行真空加熱製程。在第一晶圓片完成真空加熱製程後,第一放置區更配置以接收完成真空加熱製程的第一承載件,垂直升降台接著沿第一方向移動使第一承載件於第一放置區進行冷卻降溫,且當第一承載件於第一放置區未破真空進行冷卻降溫時,製程腔體室更配置以接收第二承載件並對第二承載件中的第二晶圓片進行真空加熱製程。An embodiment of the present disclosure provides a vertical vacuum heating process transfer mechanism that sequentially transfers a first carrier, a second carrier, and a third carrier, and includes a vertical lift chamber and a process chamber. The vertical lift chamber includes a vertical lift platform, an inlet and outlet gate valve disposed on one side of the vertical lift platform, and a process gate valve disposed on the other side of the vertical lift platform. The vertical lift platform includes a first placement area and a second placement area adjacent to the first placement area, the first placement area and the second placement area being aligned in a first direction. The first placement area is configured to receive a first carrier via the inlet and outlet gate valve, and the vertical lift platform is configured to move so that the second placement area subsequently receives a second carrier via the inlet and outlet gate valve. The process chamber is connected to a process gate valve located in the vertical lift chamber and is configured to receive a first carrier and perform a vacuum heating process on a first wafer in the first carrier. After the vacuum heating process is completed for the first wafer, the first placement area is further configured to receive the first carrier that has completed the vacuum heating process. The vertical lift then moves in a first direction to cool the first carrier in the first placement area. While the first carrier is cooling in the first placement area without breaking the vacuum, the process chamber is further configured to receive a second carrier and perform a vacuum heating process on a second wafer in the second carrier.

根據本揭露一實施方式,上述當第一晶圓片已完成冷卻降溫而第二承載件中的第二晶圓片仍在製程腔體室進行真空加熱製程時,垂直升降台接著沿相反於第一方向的第二方向移動使第一放置區再次從進出閘板閥暴露,第一承載件用以被取出且第一放置區更配置以接收第三承載件。According to one embodiment of the present disclosure, when the first wafer has completed cooling and the second wafer in the second carrier is still undergoing a vacuum heating process in the process chamber, the vertical lifting platform then moves in a second direction opposite to the first direction so that the first placement area is exposed again from the access gate valve, the first carrier is used to be removed, and the first placement area is further configured to receive a third carrier.

根據本揭露一實施方式,上述當第三承載件位於第一放置區且第二承載件中的第二晶圓片完成真空加熱製程後,垂直升降台更配置以接著沿第一方向移動,使第二放置區接收完成真空加熱製程的第二承載件。According to an embodiment of the present disclosure, when the third carrier is located in the first placement area and the second wafer in the second carrier completes the vacuum heating process, the vertical lifting platform is further configured to move along the first direction so that the second placement area receives the second carrier that has completed the vacuum heating process.

根據本揭露一實施方式,上述在第二放置區接收完成真空加熱製程的第二承載件後,垂直升降台更配置以接著沿第二方向移動使第二承載件於第二放置區未破真空進行冷卻降溫,且製程腔體室更配置以接收第三承載件並對第三承載件中的第三晶圓片進行真空加熱製程,且當第二晶圓片已完成冷卻降溫而第三承載件中的第三晶圓片仍在製程腔體室進行真空加熱製程時,垂直升降台接著沿第一方向移動,使第二放置區從進出閘板閥暴露,第二承載件用以被取出。According to an embodiment of the present disclosure, after the second carrier that has completed the vacuum heating process is received in the second placement area, the vertical lifting platform is further configured to move along the second direction so that the second carrier can be cooled in the second placement area without breaking the vacuum, and the process chamber is further configured to receive a third carrier and perform a vacuum heating process on the third wafer in the third carrier. When the second wafer has completed cooling and the third wafer in the third carrier is still undergoing the vacuum heating process in the process chamber, the vertical lifting platform then moves along the first direction to expose the second placement area from the inlet and outlet gate valve so that the second carrier can be taken out.

根據本揭露一實施方式,上述垂直升降腔體室具有輸送閘板閥,且製程閘板閥與輸送閘板閥位於垂直升降台之相對兩側。According to an embodiment of the present disclosure, the vertical lift chamber has a conveying gate valve, and the process gate valve and the conveying gate valve are located on opposite sides of the vertical lift platform.

根據本揭露一實施方式,上述垂直式真空加熱製程傳輸機構更包括橫向輸送裝置。橫向輸送裝置連接設置於垂直升降腔體室的輸送閘板閥且具有橫向抓取件。橫向抓取件配置以將第一承載件與第二承載件分別從第一放置區與第二放置區推入至製程腔體室中或從製程腔體室分別拉回至第一放置區與第二放置區上。According to one embodiment of the present disclosure, the vertical vacuum heating process transfer mechanism further includes a transverse conveyor device. The transverse conveyor device is connected to a conveyor gate valve disposed within the vertical lift chamber and comprises a transverse gripper. The transverse gripper is configured to push the first and second carriers from the first and second placement areas into the process chamber, or to pull them back from the process chamber to the first and second placement areas, respectively.

本揭露另一實施態樣為一種垂直式真空加熱製程傳輸機構的操作方法,其能夠在第一晶圓片完成真空加熱製程於垂直升降台的第一放置區進行冷卻降溫的時候,同時使垂直升降台的第二放置區將第二晶圓片傳輸至製程腔體室以進行真空加熱製程,因此可縮短製造多組晶圓片的冷卻降溫等待時間以及進行真空加熱製程的時間。Another embodiment of the present disclosure is an operating method of a vertical vacuum heating process transfer mechanism, which can simultaneously enable the second placement area of the vertical lifting platform to transfer the second wafer to the process chamber for vacuum heating process when the first wafer completes the vacuum heating process and is cooled in the first placement area of the vertical lifting platform. Therefore, the cooling waiting time for manufacturing multiple groups of wafers and the time for performing the vacuum heating process can be shortened.

本揭露的實施例提供一種垂直式真空加熱製程傳輸機構的操作方法,用以依序輸送第一承載件、第二承載件以及第三承載件,且包括:垂直升降腔體室的垂直升降台的第一放置區藉由垂直升降台的進出閘板閥接收第一承載件,垂直升降台接著進行垂直移動使垂直升降台的第二放置區藉由進出閘板閥接收第二承載件,其中垂直升降台的第一放置區與鄰近第一放置區的第二放置區在第一方向上對齊,且進出閘板閥設置於垂直升降台之一側;製程腔體室接收第一承載件並對第一承載件中的第一晶圓片進行真空加熱製程;在第一晶圓片完成真空加熱製程後,垂直升降台的第一放置區接收完成真空加熱製程的第一承載件並接著進行垂直移動;以及當第一承載件於第一放置區未破真空進行冷卻降溫時,製程腔體室接收第二承載件並對第二承載件中的第二晶圓片進行真空加熱製程。The embodiment of the present disclosure provides an operating method of a vertical vacuum heating process transfer mechanism for sequentially transferring a first carrier, a second carrier, and a third carrier, and includes: a first placement area of a vertical lifting platform of a vertical lifting chamber receives the first carrier through an inlet and outlet gate valve of the vertical lifting platform, and the vertical lifting platform then moves vertically so that a second placement area of the vertical lifting platform receives the second carrier through an inlet and outlet gate valve, wherein the first placement area of the vertical lifting platform and the second placement area adjacent to the first placement area are in a first direction. The process chamber receives a first carrier and performs a vacuum heating process on a first wafer in the first carrier; after the first wafer completes the vacuum heating process, the first placement area of the vertical lift receives the first carrier that has completed the vacuum heating process and then moves vertically; and when the first carrier is cooled in the first placement area without breaking the vacuum, the process chamber receives a second carrier and performs a vacuum heating process on a second wafer in the second carrier.

根據本揭露一實施方式,上述操作方法更包括:當第一晶圓片已完成冷卻降溫而第二承載件中的第二晶圓片仍在製程腔體室進行真空加熱製程時,垂直升降台接著沿相反於第一方向的第二方向移動使第一放置區再次從進出閘板閥暴露;以及第一承載件被取出且第一放置區接收第三承載件。According to one embodiment of the present disclosure, the above-mentioned operating method further includes: when the first wafer has completed cooling and the second wafer in the second carrier is still undergoing a vacuum heating process in the process chamber, the vertical lifting platform then moves in a second direction opposite to the first direction so that the first placement area is exposed again from the access gate valve; and the first carrier is removed and the first placement area receives the third carrier.

根據本揭露一實施方式,上述操作方法更包括:當第三承載件位於第一放置區且第二承載件中的第二晶圓片完成真空加熱製程後,垂直升降台接著沿第一方向移動,使第二放置區接收完成真空加熱製程的第二承載件。According to an embodiment of the present disclosure, the above-mentioned operating method further includes: when the third carrier is located in the first placement area and the second wafer in the second carrier completes the vacuum heating process, the vertical lifting platform then moves along the first direction so that the second placement area receives the second carrier that has completed the vacuum heating process.

根據本揭露一實施方式,上述操作方法更包括:在第二放置區接收完成真空加熱製程的第二承載件後,垂直升降台接著沿第二方向移動使第二承載件於第二放置區未破真空進行冷卻降溫,且製程腔體室接收第三承載件並對第三承載件中的第三晶圓片進行真空加熱製程;以及當第二晶圓片已完成冷卻降溫而第三承載件中的第三晶圓片仍在製程腔體室進行真空加熱製程時,垂直升降台接著沿第一方向移動,使第二放置區從進出閘板閥暴露,且第二承載件被取出。According to an embodiment of the present disclosure, the above-mentioned operating method further includes: after the second carrier that has completed the vacuum heating process is received in the second placement area, the vertical lifting platform then moves along the second direction so that the second carrier is cooled in the second placement area without breaking the vacuum, and the process chamber receives the third carrier and performs a vacuum heating process on the third wafer in the third carrier; and when the second wafer has completed cooling and the third wafer in the third carrier is still undergoing the vacuum heating process in the process chamber, the vertical lifting platform then moves along the first direction so that the second placement area is exposed from the access gate valve, and the second carrier is taken out.

綜合以上所述,於本揭露中,首先,第一承載件的第一晶圓片在完成真空加熱製程後可於垂直升降台的第一放置區進行冷卻降溫,並不會佔用到製程腔體室與垂直升降台的第二放置區的作業空間。因此,當第一承載件於第一放置區等待冷卻降溫時,位於垂直升降台的第二放置區的第二承載件可進入製程腔體室以進行真空加熱製程。此外,當第一承載件於第一放置區完成冷卻降溫而第二承載件仍在製程腔體室進行真空加熱製程時,可移動垂直升降台使第一承載件從進出閘板閥被取出,第一放置區接著接收第三承載件。當第二承載件完成真空加熱製程可傳輸至垂直升降台的第二放置區並於第二放置區進行冷卻降溫,而第三承載件可接著進入製程腔體室以進行真空加熱製程。如此反覆操作使得垂直式真空加熱製程傳輸機構的分工流程不僅可縮短製造多組晶圓片的冷卻降溫等待時間以及進行真空加熱製程的時間,也提高了使用垂直式真空加熱製程傳輸機構的晶圓出貨效率。In summary of the above, in the present disclosure, first, after completing the vacuum heating process, the first wafer of the first carrier can be cooled down in the first placement area of the vertical lift, and will not occupy the working space of the process chamber and the second placement area of the vertical lift. Therefore, when the first carrier is waiting to cool down in the first placement area, the second carrier located in the second placement area of the vertical lift can enter the process chamber to perform the vacuum heating process. In addition, when the first carrier completes cooling down in the first placement area and the second carrier is still performing the vacuum heating process in the process chamber, the vertical lift can be moved to remove the first carrier from the inlet and outlet gate valve, and the first placement area then receives the third carrier. After the second carrier completes the vacuum heating process, it is transferred to the second placement area of the vertical lift for cooling. The third carrier then enters the process chamber for the vacuum heating process. This repetitive operation allows the vertical vacuum heating process transfer mechanism to divide the work flow, not only shortening the cooling wait time and vacuum heating process time for manufacturing multiple wafers, but also improving the efficiency of wafer shipment using the vertical vacuum heating process transfer mechanism.

以下揭示之實施方式內容提供了用於實施所提供的標的之不同特徵的許多不同實施方式,或實例。下文描述了元件和佈置之特定實例以簡化本案。當然,該等實例僅為實例且並不意欲作為限制。此外,本案可在各個實例中重複元件符號及/或字母。此重複係用於簡便和清晰的目的,且其本身不指定所論述的各個實施方式及/或配置之間的關係。The following disclosed embodiments provide numerous different embodiments, or examples, for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. However, these examples are merely examples and are not intended to be limiting. Furthermore, the present disclosure may repeat component symbols and/or letters throughout the various examples. This repetition is for simplicity and clarity and does not, in itself, dictate a relationship between the various embodiments and/or configurations discussed.

諸如「在……下方」、「在……之下」、「下部」、「在……之上」、「上部」等等空間相對術語可在本文中為了便於描述之目的而使用,以描述如附圖中所示之一個元件或特徵與另一元件或特徵之關係。空間相對術語意欲涵蓋除了附圖中所示的定向之外的在使用或操作中的裝置的不同定向。裝置可經其他方式定向(旋轉90度或以其他定向)並且本文所使用的空間相對描述詞可同樣相應地解釋。Spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive purposes to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

請參照圖1與圖2,圖1繪示根據本揭露一實施方式之垂直式真空加熱製程傳輸機構100的示意圖,圖2繪示根據本揭露一實施方式之垂直升降腔體室110的側視圖。於圖1與圖2中,垂直式真空加熱製程傳輸機構100可用以依序輸送第一承載件200、第二承載件300以及第三承載件400 (將於後續詳細說明),並且垂直式真空加熱製程傳輸機構100包括垂直升降腔體室110、製程腔體室120以及橫向輸送裝置130。垂直升降腔體室110具有垂直升降台112、設置於垂直升降台112之一側的進出閘板閥111以及設置於垂直升降台112之另一側的製程閘板閥113。垂直升降台112包括第一放置區114以及鄰近第一放置區114的第二放置區116,並且第一放置區114與第二放置區116在第一方向D1上對齊。舉例來說,第一放置區114與第二放置區116在垂直方向上對齊。第一放置區114與第二放置區116之間可具有隔板,以分隔第一放置區114與第二放置區116。Please refer to Figures 1 and 2. Figure 1 shows a schematic diagram of a vertical vacuum heating process transport mechanism 100 according to an embodiment of the present disclosure, and Figure 2 shows a side view of a vertical lift chamber 110 according to an embodiment of the present disclosure. In Figures 1 and 2, the vertical vacuum heating process transport mechanism 100 can be used to sequentially transport a first carrier 200, a second carrier 300, and a third carrier 400 (described in detail later). The vertical vacuum heating process transport mechanism 100 includes a vertical lift chamber 110, a process chamber 120, and a horizontal transport device 130. The vertical lift chamber 110 includes a vertical lift platform 112, an inlet and outlet gate valve 111 disposed on one side of the vertical lift platform 112, and a process gate valve 113 disposed on the other side of the vertical lift platform 112. The vertical lift platform 112 includes a first placement area 114 and a second placement area 116 adjacent to the first placement area 114. The first placement area 114 and the second placement area 116 are aligned in a first direction D1. For example, the first placement area 114 and the second placement area 116 are aligned in the vertical direction. A partition may be provided between the first placement area 114 and the second placement area 116 to separate the first placement area 114 from the second placement area 116.

在一些實施方式中,製程腔體室120連接設置於垂直升降腔體室110的製程閘板閥113。垂直升降腔體室110具有輸送閘板閥115,且製程閘板閥113與輸送閘板閥115位於垂直升降台112之相對兩側。舉例來說,製程閘板閥113位於垂直升降台112的左側,輸送閘板閥115位於垂直升降台112的右側,而進出閘板閥111位置於垂直升降台112的前側。此外,橫向輸送裝置130連接設置於垂直升降腔體室110的輸送閘板閥115且具有橫向抓取件132。In some embodiments, the process chamber 120 is connected to a process gate valve 113 disposed in the vertical lift chamber 110. The vertical lift chamber 110 has a conveying gate valve 115, and the process gate valve 113 and the conveying gate valve 115 are located on opposite sides of the vertical lift platform 112. For example, the process gate valve 113 is located on the left side of the vertical lift platform 112, the conveying gate valve 115 is located on the right side of the vertical lift platform 112, and the inlet and outlet gate valve 111 is located on the front side of the vertical lift platform 112. In addition, the horizontal conveying device 130 is connected to the conveying gate valve 115 disposed in the vertical lift chamber 110 and has a horizontal gripper 132.

在以下敘述中,將說明垂直式真空加熱製程傳輸機構的操作方法。已敘述的元件連接關係、材料與功效將不重覆贅述,合先敘明。The following description will explain the operation of the vertical vacuum heating process transfer mechanism. The component connections, materials, and functions already described will not be repeated, so it is best to explain them first.

請參照圖3,圖3繪示根據本揭露一實施方式之垂直式真空加熱製程傳輸機構的操作方法的流程圖。於圖3中,垂直式真空加熱製程傳輸機構的操作方法包括下列步驟。垂直式真空加熱製程傳輸機構的操作方法可依序輸送第一承載件、第二承載件以及第三承載件。首先,在步驟S1中,垂直升降腔體室的垂直升降台的第一放置區藉由垂直升降台的進出閘板閥接收第一承載件,垂直升降台接著進行垂直移動使垂直升降台的第二放置區藉由進出閘板閥接收第二承載件,其中垂直升降台的第一放置區與鄰近第一放置區的第二放置區在第一方向上對齊,且進出閘板閥設置於垂直升降台之一側。接著,在步驟S2中,製程腔體室接收第一承載件並對第一承載件中的第一晶圓片進行真空加熱製程。接著,在步驟S3中,在第一晶圓片完成真空加熱製程後,垂直升降台的第一放置區接收完成真空加熱製程的第一承載件並接著進行垂直移動。接著,在步驟S4中,當第一承載件於第一放置區未破真空進行冷卻降溫時,製程腔體室接收第二承載件並對第二承載件中的第二晶圓片進行真空加熱製程。在以下敘述中,將詳細說明上述各步驟。Please refer to Figure 3, which shows a flow chart of the operating method of the vertical vacuum heating process transfer mechanism according to an embodiment of the present disclosure. In Figure 3, the operating method of the vertical vacuum heating process transfer mechanism includes the following steps. The operating method of the vertical vacuum heating process transfer mechanism can transport the first carrier, the second carrier, and the third carrier in sequence. First, in step S1, the first placement area of the vertical lifting platform of the vertical lifting chamber receives the first carrier through the inlet and outlet gate valve of the vertical lifting platform, and the vertical lifting platform then moves vertically so that the second placement area of the vertical lifting platform receives the second carrier through the inlet and outlet gate valve, wherein the first placement area of the vertical lifting platform is aligned with the second placement area adjacent to the first placement area in the first direction, and the inlet and outlet gate valve is arranged on one side of the vertical lifting platform. Next, in step S2, the process chamber receives a first carrier and performs a vacuum heating process on the first wafer in the first carrier. Next, in step S3, after the vacuum heating process is complete for the first wafer, the first placement area of the vertical lift receives the first carrier that has completed the vacuum heating process and then moves vertically. Next, in step S4, while the first carrier is cooling in the first placement area without breaking the vacuum, the process chamber receives a second carrier and performs a vacuum heating process on the second wafer in the second carrier. The following description will describe each of these steps in detail.

圖4、圖7、圖8、圖10以及圖11繪示根據本揭露一些實施方式之垂直式真空加熱製程傳輸機構的操作方法於不同階段的示意圖。圖5、圖6、圖9以及圖12至圖15繪示根據本揭露一些實施方式之垂直式真空加熱製程傳輸機構100的垂直升降腔體室110於不同階段的側視圖。請參照圖4至圖6,首先,當垂直升降腔體室110的垂直升降台112的第一放置區114從垂直升降腔體室110的進出閘板閥111暴露時(即進出閘板閥111打開使第一放置區114可被觀測到),第一放置區114配置以藉由進出閘板閥111接收第一承載件200,且垂直升降台112接著進行垂直移動(例如沿第一方向D1移動),使第二放置區116從進出閘板閥111暴露(即進出閘板閥111打開使第二放置區116可被觀測到)並藉由進出閘板閥111接收第二承載件300,如圖5所示。在第二放置區116接收第二承載件300後,垂直升降台112接著進行垂直移動(例如沿第二方向D2移動),使第一承載件200準備進入製程腔體室120,如圖6所示。為了清楚繪示,圖4的第一承載件200與第二承載件300的尺寸不同。但在實際應用中,第一承載件200與第二承載件300的尺寸可為相同或者為不相同,第一承載件200與第二承載件300的尺寸並不以此為限。Figures 4, 7, 8, 10, and 11 illustrate schematic diagrams of different stages of the operation of a vertical vacuum heating process transfer mechanism according to some embodiments of the present disclosure. Figures 5, 6, 9, and 12 to 15 illustrate side views of the vertical lift chamber 110 of the vertical vacuum heating process transfer mechanism 100 at different stages according to some embodiments of the present disclosure. Please refer to Figures 4 to 6. First, when the first placement area 114 of the vertical lifting platform 112 of the vertical lifting chamber 110 is exposed from the inlet and outlet gate valve 111 of the vertical lifting chamber 110 (that is, the inlet and outlet gate valve 111 is opened so that the first placement area 114 can be observed), the first placement area 114 is configured to receive the first carrier 200 through the inlet and outlet gate valve 111, and the vertical lifting platform 112 then moves vertically (for example, moves along the first direction D1) to expose the second placement area 116 from the inlet and outlet gate valve 111 (that is, the inlet and outlet gate valve 111 is opened so that the second placement area 116 can be observed) and receive the second carrier 300 through the inlet and outlet gate valve 111, as shown in Figure 5. After the second carrier 300 is received in the second placement area 116, the vertical lift 112 then moves vertically (e.g., along the second direction D2) to prepare the first carrier 200 for entry into the process chamber 120, as shown in FIG6 . For clarity, the first carrier 200 and the second carrier 300 in FIG4 have different sizes. However, in actual applications, the sizes of the first carrier 200 and the second carrier 300 can be the same or different, and the sizes of the first carrier 200 and the second carrier 300 are not limited to this.

請參照圖7至圖9,在一些實施方式中,橫向輸送裝置130的橫向抓取件132可將第一承載件200從第一放置區114推入至製程腔體室120中,如圖7所示。在其他實施方式中,可不使用橫向輸送裝置130的橫向抓取件132,而是藉由垂直升降腔體室110的機械手臂(圖未示)將第一承載件200從第一放置區114推入至製程腔體室120中。將第一承載件200推入至製程腔體室120中的方式並不限制。製程腔體室120連接設置於垂直升降腔體室110的製程閘板閥113。製程腔體室120可接收第一承載件200並對第一承載件200中的第一晶圓片210進行真空加熱製程,如圖8與圖9所示。此外,可藉由橫向輸送裝置130的橫向抓取件132或是垂直升降腔體室110的機械手臂(圖未示)將第一承載件200從製程腔體室120拉回至第一放置區114上。將第一承載件200從製程腔體室120拉回至第一放置區114上的方式並不做限制。Referring to Figures 7 to 9 , in some embodiments, the lateral gripper 132 of the lateral conveyor 130 can push the first carrier 200 from the first placement area 114 into the process chamber 120, as shown in Figure 7 . In other embodiments, the lateral gripper 132 of the lateral conveyor 130 may not be used. Instead, a robot (not shown) of the vertical lift chamber 110 can push the first carrier 200 from the first placement area 114 into the process chamber 120. The method for pushing the first carrier 200 into the process chamber 120 is not limited. The process chamber 120 is connected to the process gate valve 113 disposed on the vertical lift chamber 110. The process chamber 120 can receive the first carrier 200 and perform a vacuum heating process on the first wafer 210 in the first carrier 200, as shown in Figures 8 and 9. Furthermore, the first carrier 200 can be pulled back from the process chamber 120 to the first placement area 114 using the horizontal gripper 132 of the horizontal transport device 130 or a robot (not shown) that vertically elevates the chamber 110. The method for pulling the first carrier 200 back from the process chamber 120 to the first placement area 114 is not limited.

請參照圖10至圖12,在第一晶圓片210完成真空加熱製程後,第一放置區114更配置以接收完成真空加熱製程的第一承載件200,且垂直升降台112接著沿第一方向D1移動,使第一承載件200於第一放置區114進行冷卻降溫。並且,當第一承載件200於第一放置區114未破真空進行冷卻降溫時,製程腔體室120更配置以接收第二承載件300,並對第二承載件300中的第二晶圓片310進行真空加熱製程,如圖11與圖12所示。Referring to Figures 10 to 12 , after the vacuum heating process is completed on the first wafer 210, the first placement area 114 is further configured to receive the first carrier 200 that has completed the vacuum heating process. The vertical lift 112 then moves along the first direction D1 to cool the first carrier 200 in the first placement area 114. Furthermore, while the first carrier 200 is cooling in the first placement area 114 without breaking the vacuum, the process chamber 120 is further configured to receive the second carrier 300 and perform the vacuum heating process on the second wafer 310 in the second carrier 300, as shown in Figures 11 and 12 .

請參照圖13至圖15,當第一晶圓片210已完成冷卻降溫而第二承載件300中的第二晶圓片310仍在製程腔體室120進行真空加熱製程時,垂直升降台112接著沿相反於第一方向D1的第二方向D2移動,使第一放置區114再次從進出閘板閥111暴露(即進出閘板閥111在破真空後打開使第一承載件200可被觀測到)。第一承載件200可被取出且第一放置區114更配置以接收第三承載件400,如圖13所示。當第三承載件400位於第一放置區114且第二承載件300中的第二晶圓片310完成真空加熱製程後,垂直升降台112更配置以接著沿第一方向D1移動,使第二放置區116接收完成真空加熱製程的第二承載件300,並且第二承載件300於第二放置區116未破真空進行冷卻降溫,如圖14所示。垂直升降台112更配置以沿第二方向D2移動且製程腔體室120更配置以接收第三承載件400並對第三承載件400中的第三晶圓片410進行真空加熱製程,如圖15所示。Referring to Figures 13 to 15 , after the first wafer 210 has finished cooling and the second wafer 310 in the second carrier 300 is still undergoing a vacuum heating process in the process chamber 120, the vertical lift 112 then moves in a second direction D2 opposite to the first direction D1, exposing the first placement area 114 again from the access gate valve 111 (i.e., the access gate valve 111 opens after breaking the vacuum, allowing the first carrier 200 to be observed). The first carrier 200 can then be removed, and the first placement area 114 is further configured to receive a third carrier 400, as shown in Figure 13 . After the third carrier 400 is positioned in the first placement area 114 and the second wafer 310 in the second carrier 300 completes the vacuum heating process, the vertical lift 112 is further configured to move along the first direction D1, allowing the second placement area 116 to receive the second carrier 300 that has completed the vacuum heating process. The second carrier 300 is then cooled in the second placement area 116 without breaking the vacuum, as shown in FIG14 . The vertical lift 112 is further configured to move along the second direction D2, and the process chamber 120 is further configured to receive the third carrier 400 and perform the vacuum heating process on the third wafer 410 in the third carrier 400, as shown in FIG15 .

接著,當第二晶圓片310已完成冷卻降溫而第三承載件400中的第三晶圓片410仍在製程腔體室120進行真空加熱製程時,垂直升降台112接著沿第一方向D1移動,使第二放置區116從進出閘板閥111暴露(即進出閘板閥111在破真空後打開使第二承載件300可被觀測到),且第二承載件300用以被取出。如此反覆操作可縮短晶圓片的冷卻降溫等待時間以及進行真空加熱製程的時間。Next, when the second wafer 310 has finished cooling and the third wafer 410 in the third carrier 400 is still undergoing the vacuum heating process in the process chamber 120, the vertical lift 112 moves in the first direction D1, exposing the second placement area 116 from the access gate valve 111 (i.e., the access gate valve 111 opens after breaking the vacuum, allowing the second carrier 300 to be observed), and the second carrier 300 is ready for removal. This repeated operation shortens the wafer cooling waiting time and the vacuum heating process time.

綜上所述,第一承載件200的第一晶圓片210在完成真空加熱製程後可於垂直升降台112的第一放置區114進行冷卻降溫,並不會佔用到製程腔體室120與垂直升降台112的第二放置區116的作業空間。因此,當第一承載件200於第一放置區114等待冷卻降溫時,位於垂直升降台112的第二放置區116的第二承載件300可進入製程腔體室以進行真空加熱製程。此外,當第一承載件200於第一放置區114完成冷卻降溫而第二承載件300仍在製程腔體室120進行真空加熱製程時,可移動垂直升降台112使第一承載件200從進出閘板閥111被取出,而第一放置區114接著接收第三承載件400。當第二承載件300完成真空加熱製程可傳輸至垂直升降台112的第二放置區116並於第二放置區116進行冷卻降溫,而第三承載件400可接著進入製程腔體室120以進行真空加熱製程。如此反覆操作使得垂直式真空加熱製程傳輸機構100的分工流程不僅可縮短製造多組晶圓片的冷卻降溫等待時間以及進行真空加熱製程的時間,也提高了使用垂直式真空加熱製程傳輸機構100的晶圓出貨效率。In summary, after the vacuum heating process, the first wafer 210 on the first carrier 200 can be cooled in the first placement area 114 of the vertical lift 112, without occupying the working space of the process chamber 120 and the second placement area 116 of the vertical lift 112. Therefore, while the first carrier 200 is waiting to cool in the first placement area 114, the second carrier 300 located in the second placement area 116 of the vertical lift 112 can enter the process chamber to undergo the vacuum heating process. Furthermore, when the first carrier 200 has completed cooling in the first placement area 114 and the second carrier 300 is still undergoing the vacuum heating process in the process chamber 120, the vertical lift 112 can be moved to remove the first carrier 200 from the access gate valve 111, and the first placement area 114 then receives the third carrier 400. After the second carrier 300 has completed the vacuum heating process, it can be transferred to the second placement area 116 of the vertical lift 112 and cooled there. The third carrier 400 can then enter the process chamber 120 for the vacuum heating process. This repetitive operation allows the division of labor in the vertical vacuum heating process transfer mechanism 100 to not only shorten the cooling waiting time and vacuum heating process time for manufacturing multiple sets of wafers, but also improve the wafer shipping efficiency using the vertical vacuum heating process transfer mechanism 100.

前述概述了幾個實施方式的特徵,使得本領域技術人員可以更好地理解本揭露的態樣。本領域技術人員應當理解,他們可以容易地將本揭露用作設計或修改其他過程和結構的基礎,以實現與本文介紹的實施方式相同的目的和/或實現相同的優點。本領域技術人員還應該認識到,這樣的等效構造不脫離本揭露的精神和範圍,並且在不脫離本揭露的精神和範圍的情況下,它們可以在這裡進行各種改變,替換和變更。The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and/or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of the present disclosure.

100:垂直式真空加熱製程傳輸機構 110:垂直升降腔體室 111:進出閘板閥 112:垂直升降台 113:製程閘板閥 114:第一放置區 115:輸送閘板閥 116:第二放置區 120:製程腔體室 130:橫向輸送裝置 132:橫向抓取件 200:第一承載件 210:第一晶圓片 300:第二承載件 310:第二晶圓片 400:第三承載件 410:第三晶圓片 D1:第一方向 D2:第二方向 S1、S2、S3、S4:步驟 100: Vertical vacuum heating process transfer mechanism 110: Vertical lift chamber 111: Entry and exit gate valve 112: Vertical lift platform 113: Process gate valve 114: First placement area 115: Transport gate valve 116: Second placement area 120: Process chamber 130: Horizontal transfer mechanism 132: Horizontal gripper 200: First carrier 210: First wafer 300: Second carrier 310: Second wafer 400: Third carrier 410: Third wafer D1: First direction D2: Second direction S1, S2, S3, S4: Steps

當結合隨附諸圖閱讀時,得自以下詳細描述最佳地理解本揭露之一實施方式。應強調,根據工業上之標準實務,各種特徵並未按比例繪製且僅用於說明目的。事實上,為了論述清楚,可任意地增大或減小各種特徵之尺寸。 圖1繪示根據本揭露一實施方式之垂直式真空加熱製程傳輸機構的示意圖。 圖2繪示根據本揭露一實施方式之垂直升降腔體室的側視圖。 圖3繪示根據本揭露一實施方式之垂直式真空加熱製程傳輸機構的操作方法的流程圖。 圖4、圖7、圖8、圖10以及圖11繪示根據本揭露一些實施方式之垂直式真空加熱製程傳輸機構的操作方法於不同階段的示意圖。 圖5、圖6、圖9以及圖12至圖15繪示根據本揭露一些實施方式之垂直式真空加熱製程傳輸機構的垂直升降腔體室於不同階段的側視圖。 One embodiment of the present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, in accordance with standard industry practice, various features are not drawn to scale and are shown for illustrative purposes only. In fact, the dimensions of various features may be arbitrarily increased or decreased for clarity of presentation. Figure 1 illustrates a schematic diagram of a vertical vacuum heating process transfer mechanism according to one embodiment of the present disclosure. Figure 2 illustrates a side view of a vertical lift chamber according to one embodiment of the present disclosure. Figure 3 illustrates a flow chart of a method for operating the vertical vacuum heating process transfer mechanism according to one embodiment of the present disclosure. Figures 4, 7, 8, 10, and 11 illustrate schematic diagrams of different stages of the operation of a vertical vacuum heating process transfer mechanism according to some embodiments of the present disclosure. Figures 5, 6, 9, and 12 to 15 illustrate side views of a vertical lift chamber of a vertical vacuum heating process transfer mechanism according to some embodiments of the present disclosure at different stages.

100:垂直式真空加熱製程傳輸機構 100: Vertical vacuum heating process transmission mechanism

110:垂直升降腔體室 110: Vertical Lift Chamber

111:進出閘板閥 111: Inlet and outlet gate valve

112:垂直升降台 112: Vertical Lift Platform

113:製程閘板閥 113: Process Gate Valve

115:輸送閘板閥 115: Conveyor gate valve

120:製程腔體室 120: Process chamber

130:橫向輸送裝置 130: Horizontal conveyor device

132:橫向抓取件 132: Horizontal grabber

Claims (10)

一種垂直式真空加熱製程傳輸機構,用以依序輸送一第一承載件(200)、一第二承載件(300)以及一第三承載件(400),包括: 一垂直升降腔體室(110),具有一垂直升降台(112)、設置於該垂直升降台(112)之一側的一進出閘板閥(111)以及設置於該垂直升降台(112)之另一側的一製程閘板閥(113),其中該垂直升降台(112)包括一第一放置區(114)以及鄰近該第一放置區(114)的一第二放置區(116),該第一放置區(114)與該第二放置區(116)在一第一方向(D1)上對齊,其中該第一放置區(114)配置以藉由該進出閘板閥(111)接收該第一承載件(200),且該垂直升降台(112)配置以移動使該第二放置區(116)接著藉由該進出閘板閥(111)接收該第二承載件(300); 以及 一製程腔體室(120),連接設置於該垂直升降腔體室(110)的該製程閘板閥(113),且配置以接收該第一承載件(200)並對該第一承載件(200)中的一第一晶圓片(210)進行真空加熱製程,其中在該第一晶圓片(210)完成真空加熱製程後,該第一放置區(114)更配置以接收完成真空加熱製程的該第一承載件(200),該垂直升降台(112)接著沿該第一方向(D1)移動使該第一承載件(200)於該第一放置區(114)進行冷卻降溫,且當該第一承載件(200)於該第一放置區(114)未破真空進行冷卻降溫時,該製程腔體室(120)更配置以接收該第二承載件(300)並對該第二承載件(300)中的一第二晶圓片(310)進行真空加熱製程。 A vertical vacuum heating process conveying mechanism for sequentially conveying a first carrier (200), a second carrier (300) and a third carrier (400) comprises: a vertical lifting chamber (110) having a vertical lifting platform (112), an inlet and outlet gate valve (111) disposed on one side of the vertical lifting platform (112) and a process gate valve (113) disposed on the other side of the vertical lifting platform (112), wherein the vertical lifting platform (112) comprises a first placement area (114) and a second placement area (113) adjacent to the first placement area (114). 6), the first placement area (114) and the second placement area (116) are aligned in a first direction (D1), wherein the first placement area (114) is configured to receive the first carrier (200) through the inlet and outlet gate valve (111), and the vertical lifting platform (112) is configured to move so that the second placement area (116) then receives the second carrier (300) through the inlet and outlet gate valve (111); and A process chamber (120) is connected to the process gate valve (113) arranged in the vertical lift chamber (110) and is configured to receive the first carrier (200) and perform a vacuum heating process on a first wafer (210) in the first carrier (200), wherein after the vacuum heating process is completed on the first wafer (210), the first placement area (114) is further configured to receive the first carrier (200) that has completed the vacuum heating process. The vertical lifting platform (112) then moves along the first direction (D1) to cool the first carrier (200) in the first placement area (114). When the first carrier (200) is cooled in the first placement area (114) without breaking the vacuum, the process chamber (120) is further configured to receive the second carrier (300) and perform a vacuum heating process on a second wafer (310) in the second carrier (300). 如請求項1所述之垂直式真空加熱製程傳輸機構,其中當該第一晶圓片(210)已完成冷卻降溫而該第二承載件(300)中的該第二晶圓片(310)仍在該製程腔體室(120)進行真空加熱製程時,該垂直升降台(112)接著沿相反於該第一方向(D1)的一第二方向(D2)移動使該第一放置區(114)再次從該進出閘板閥(111)暴露,該第一承載件(200)用以被取出且該第一放置區(114)更配置以接收該第三承載件(400)。A vertical vacuum heating process transfer mechanism as described in claim 1, wherein when the first wafer (210) has completed cooling and the second wafer (310) in the second carrier (300) is still undergoing a vacuum heating process in the process chamber (120), the vertical lifting platform (112) is then moved along a second direction (D2) opposite to the first direction (D1) to expose the first placement area (114) again from the access gate valve (111), the first carrier (200) is used to be taken out and the first placement area (114) is further configured to receive the third carrier (400). 如請求項2所述之垂直式真空加熱製程傳輸機構,其中當該第三承載件(400)位於該第一放置區(114)且該第二承載件(300)中的該第二晶圓片(310)完成真空加熱製程後,該垂直升降台(112)更配置以接著沿該第一方向(D1)移動,使該第二放置區(116)接收完成真空加熱製程的該第二承載件(300)。A vertical vacuum heating process transfer mechanism as described in claim 2, wherein when the third carrier (400) is located in the first placement area (114) and the second wafer (310) in the second carrier (300) completes the vacuum heating process, the vertical lifting platform (112) is further configured to move along the first direction (D1) so that the second placement area (116) receives the second carrier (300) that has completed the vacuum heating process. 如請求項3所述之垂直式真空加熱製程傳輸機構,其中在該第二放置區(116)接收完成真空加熱製程的該第二承載件(300)後,該垂直升降台(112)更配置以接著沿該第二方向(D2)移動使該第二承載件(300)於該第二放置區(116)未破真空進行冷卻降溫,且該製程腔體室(120)更配置以接收該第三承載件(400)並對該第三承載件(400)中的一第三晶圓片(410)進行真空加熱製程,且當該第二晶圓片(310)已完成冷卻降溫而該第三承載件(400)中的該第三晶圓片(410)仍在該製程腔體室(120)進行真空加熱製程時,該垂直升降台(112)接著沿該第一方向(D1)移動,使該第二放置區(116)從該進出閘板閥(111)暴露,該第二承載件(300)用以被取出。The vertical vacuum heating process transfer mechanism as described in claim 3, wherein after the second carrier (300) that has completed the vacuum heating process is received in the second placement area (116), the vertical lifting platform (112) is further configured to move along the second direction (D2) to cool the second carrier (300) in the second placement area (116) without breaking the vacuum, and the process chamber (120) is further configured to receive the third carrier (400) and cool the third carrier (400). 00) undergoes a vacuum heating process, and when the second wafer (310) has completed cooling and the third wafer (410) in the third carrier (400) is still undergoing a vacuum heating process in the process chamber (120), the vertical lifting platform (112) then moves along the first direction (D1) to expose the second placement area (116) from the access gate valve (111), and the second carrier (300) is used to be taken out. 如請求項1所述之垂直式真空加熱製程傳輸機構,其中該垂直升降腔體室(110)具有一輸送閘板閥(115),且該製程閘板閥(113)與該輸送閘板閥(115)位於該垂直升降台(112)之相對兩側。A vertical vacuum heating process transfer mechanism as described in claim 1, wherein the vertical lifting chamber (110) has a transfer gate valve (115), and the process gate valve (113) and the transfer gate valve (115) are located on opposite sides of the vertical lifting platform (112). 如請求項5所述之垂直式真空加熱製程傳輸機構,更包括: 一橫向輸送裝置(130),連接設置於該垂直升降腔體室(110)的該輸送閘板閥(115)且具有一橫向抓取件(132),其中該橫向抓取件(132)配置以將該第一承載件(200)與該第二承載件(300)分別從該第一放置區(114)與該第二放置區(116)推入至該製程腔體室(120)中或從該製程腔體室(120)分別拉回至該第一放置區(114)與該第二放置區(116)上。 The vertical vacuum heating process transfer mechanism as described in claim 5 further comprises: A horizontal transfer device (130) connected to the transfer gate valve (115) disposed in the vertical lift chamber (110) and having a horizontal gripper (132), wherein the horizontal gripper (132) is configured to push the first carrier (200) and the second carrier (300) from the first placement area (114) and the second placement area (116) into the process chamber (120) or pull them back from the process chamber (120) to the first placement area (114) and the second placement area (116) respectively. 一種垂直式真空加熱製程傳輸機構的操作方法,用以依序輸送一第一承載件(200)、一第二承載件(300)以及一第三承載件(400),包括: 一垂直升降腔體室(110)的一垂直升降台(112)的一第一放置區(114)藉由該垂直升降台(112)的一進出閘板閥(111)接收該第一承載件(200),該垂直升降台(112)接著進行垂直移動使該垂直升降台(112)的一第二放置區(116)藉由該進出閘板閥(111)接收該第二承載件(300),其中該垂直升降台(112)的該第一放置區(114)與鄰近該第一放置區(114)的該第二放置區(116)在一第一方向(D1)上對齊,且該進出閘板閥(111)設置於該垂直升降台(112)之一側; 一製程腔體室(120)接收該第一承載件(200)並對該第一承載件(200)中的一第一晶圓片(210)進行真空加熱製程; 在該第一晶圓片(210)完成真空加熱製程後,該垂直升降台(112)的該第一放置區(114)接收完成真空加熱製程的該第一承載件(200)並接著進行垂直移動; 以及 當該第一承載件(200)於該第一放置區(114)未破真空進行冷卻降溫時,該製程腔體室(120)接收該第二承載件(300)並對該第二承載件(300)中的一第二晶圓片(310)進行真空加熱製程。 A method for operating a vertical vacuum heating process transfer mechanism for sequentially transferring a first carrier (200), a second carrier (300), and a third carrier (400), comprising: A first placement area (114) of a vertical lifting platform (112) of a vertical lifting chamber (110) receives the first carrier (200) via an inlet and outlet gate valve (111) of the vertical lifting platform (112), and the vertical lifting platform (112) then moves vertically so that a second placement area (116) of the vertical lifting platform (112) receives the second carrier (300) via the inlet and outlet gate valve (111), wherein the first placement area (114) of the vertical lifting platform (112) and the second placement area (116) adjacent to the first placement area (114) are aligned in a first direction (D1), and the inlet and outlet gate valve (111) is arranged on one side of the vertical lifting platform (112); A process chamber (120) receives the first carrier (200) and performs a vacuum heating process on a first wafer (210) in the first carrier (200); after the vacuum heating process is completed on the first wafer (210), the first placement area (114) of the vertical lifting platform (112) receives the first carrier (200) that has completed the vacuum heating process and then moves vertically; and when the first carrier (200) is cooled in the first placement area (114) without breaking the vacuum, the process chamber (120) receives the second carrier (300) and performs a vacuum heating process on a second wafer (310) in the second carrier (300). 如請求項7所述之垂直式真空加熱製程傳輸機構的操作方法,更包括: 當該第一晶圓片(210)已完成冷卻降溫而該第二承載件(300)中的該第二晶圓片(310)仍在該製程腔體室(120)進行真空加熱製程時,該垂直升降台(112)接著沿相反於該第一方向(D1)的一第二方向(D2)移動使該第一放置區(114)再次從該進出閘板閥(111)暴露;以及 該第一承載件(200)被取出且該第一放置區(114)接收該第三承載件(400)。 The method for operating the vertical vacuum heating process transfer mechanism as described in claim 7 further includes: when the first wafer (210) has completed cooling and the second wafer (310) in the second carrier (300) is still undergoing a vacuum heating process in the process chamber (120), the vertical lifting platform (112) is then moved along a second direction (D2) opposite to the first direction (D1) to expose the first placement area (114) again from the access gate valve (111); and the first carrier (200) is taken out and the first placement area (114) receives the third carrier (400). 如請求項8所述之垂直式真空加熱製程傳輸機構的操作方法,更包括: 當該第三承載件(400)位於該第一放置區(114)且該第二承載件(300)中的該第二晶圓片(310)完成真空加熱製程後,該垂直升降台(112)接著沿該第一方向(D1)移動,使該第二放置區(116)接收完成真空加熱製程的該第二承載件(300)。 The method for operating the vertical vacuum heating process transfer mechanism as described in claim 8 further comprises: When the third carrier (400) is located in the first placement area (114) and the second wafer (310) in the second carrier (300) completes the vacuum heating process, the vertical lifting platform (112) then moves along the first direction (D1) so that the second placement area (116) receives the second carrier (300) that has completed the vacuum heating process. 如請求項9所述之垂直式真空加熱製程傳輸機構的操作方法,更包括: 在該第二放置區(116)接收完成真空加熱製程的該第二承載件(300)後,該垂直升降台(112)接著沿該第二方向(D2)移動使該第二承載件(300)於該第二放置區(116)未破真空進行冷卻降溫,且該製程腔體室(120)接收該第三承載件(400)並對該第三承載件(400)中的一第三晶圓片(410)進行真空加熱製程;以及 當該第二晶圓片(310)已完成冷卻降溫而該第三承載件(400)中的該第三晶圓片(410)仍在該製程腔體室(120)進行真空加熱製程時,該垂直升降台(112)接著沿該第一方向(D1)移動,使該第二放置區(116)從該進出閘板閥(111)暴露,且該第二承載件(300)被取出。 The method for operating the vertical vacuum heating process transfer mechanism as described in claim 9 further includes: After the second placement area (116) receives the second carrier (300) that has completed the vacuum heating process, the vertical lifting platform (112) then moves along the second direction (D2) to cool the second carrier (300) in the second placement area (116) without breaking the vacuum, and the process chamber (120) receives the third carrier (400) and performs a vacuum heating process on a third wafer (410) in the third carrier (400); and When the second wafer (310) has completed cooling and the third wafer (410) in the third carrier (400) is still undergoing a vacuum heating process in the process chamber (120), the vertical lifting platform (112) then moves along the first direction (D1) to expose the second placement area (116) from the access gate valve (111), and the second carrier (300) is taken out.
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Citations (3)

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CN1734711A (en) * 2004-08-11 2006-02-15 株式会社岛津制作所 Vacuum processing device
US7976635B2 (en) * 1999-12-15 2011-07-12 Applied Materials, Inc. Dual substrate loadlock process equipment
TWI632632B (en) * 2016-09-28 2018-08-11 日立國際電氣股份有限公司 Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7976635B2 (en) * 1999-12-15 2011-07-12 Applied Materials, Inc. Dual substrate loadlock process equipment
CN1734711A (en) * 2004-08-11 2006-02-15 株式会社岛津制作所 Vacuum processing device
TWI632632B (en) * 2016-09-28 2018-08-11 日立國際電氣股份有限公司 Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium

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