CN109980103A - A kind of preparation method of QLED device - Google Patents
A kind of preparation method of QLED device Download PDFInfo
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- CN109980103A CN109980103A CN201711459198.XA CN201711459198A CN109980103A CN 109980103 A CN109980103 A CN 109980103A CN 201711459198 A CN201711459198 A CN 201711459198A CN 109980103 A CN109980103 A CN 109980103A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention discloses a kind of preparation methods of QLED device, comprising steps of providing the first substrate, the upper surface of first substrate has several grooves and/or protrusion, deposits first electrode in first substrate, the first quantum dot light emitting layer is deposited on the first electrode, obtains first structure；The second substrate is provided, the upper surface of second substrate has several grooves matched with the structure in the first substrate and/or protrusion, deposits second electrode in second substrate, deposit the second quantum dot light emitting layer in the second electrode, obtain the second structure；The protrusion is inserted into groove and makes second structure in conjunction with first structure, obtains QLED device.The non-electrode of quantum dot light emitting layer of the preparation-obtained QLED device of the method for the present invention or the influence of other function layer preparation process have preferable luminous efficiency.
Description
Technical field
The present invention relates to light emitting diode with quantum dots technical field more particularly to a kind of preparation methods of QLED device.
Background technique
Quantum dot is a kind of special material for being limited in nanometer scale in three dimensions, this significant
Quantum confined effect makes quantum dot be provided with many unique nanometer properties: launch wavelength is continuously adjustable, emission wavelength is narrow, inhales
Receive spectral width, luminous intensity height, fluorescence lifetime length and good biocompatibility etc..The quantum dot light emitting two as prepared by quantum dot
Pole pipe (QLED device) has the characteristics that narrow FWHM(peak width at half height), Color tunable and can solution method preparation etc. it is excellent make its at
For the candidate of next-generation display science and technology.Different researchers studies QLED device from different angles, including amount
The research of son point luminescent layer (QDs), hole transmission layer (HTL), hole injection layer (ETL) and electrode, and to the structure of device,
The research of performance and stability, so that the performance of device is gradually improving, and existing high performance QLED device is mostly all
It is bottom emitting (namely eurymeric QLED device), and screen application is really suitble to need the device architecture using transoid QLED, because
Transoid QLED structure has can be directly connected to the TFT transistor backboard of the type of n- channel equal many advantages.
But current QLED device reported in the literature, either eurymeric device architecture or transoid device architecture,
After having deposited quantum dot light emitting layer, it is also necessary to deposit other function layer on quantum dot light emitting layer or electrode, deposition process are past
Past is to be carried out with solwution method, and solvent used in solwution method can also be molten while dissolving functional material or electrode material
QD is solved, thus when preparing above-mentioned QLED device using the method for whole soln, it is unavoidable QDs layers to be impacted, even
QD layers can all be washed away, thereby reduce the luminous efficiency of device；This experimental phenomena also with the report in document
Experiment conclusion is identical.
Therefore, the prior art could be improved.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of preparation method of QLED device, purports
It is easy damage quantum dot light emitting layer when solving existing method preparation QLED device, causes prepared QLED device light emitting efficiency
Bad problem.
Technical scheme is as follows:
A kind of preparation method of QLED device, wherein comprising steps of
The first substrate is provided, the upper surface of first substrate has several grooves and/or protrusion, sinks in first substrate
Product first electrode, deposits the first quantum dot light emitting layer on the first electrode, obtains first structure；
The second substrate is provided, the upper surface of second substrate has several protrusions matched with the structure in the first substrate
And/or groove, second electrode is deposited in second substrate, deposits the second quantum dot light emitting layer in the second electrode,
Obtain the second structure；
The protrusion is inserted into the groove and makes second structure in conjunction with first structure, obtains QLED device.
The preparation method of the QLED device, wherein after depositing first electrode in first substrate, described
Before depositing the first quantum dot light emitting layer in first electrode, further comprises the steps of: and deposit the first functional layer on the first electrode.
The preparation method of the QLED device, wherein after depositing second electrode in second substrate, described
Before depositing the second quantum dot light emitting layer in second electrode, further comprises the steps of: and deposit the second functional layer in the second electrode.
The preparation method of the QLED device, wherein the protrusion matches with the groove.
The preparation method of the QLED device, wherein the sectional area of the groove is greater than the sectional area of the protrusion.
The preparation method of the QLED device, wherein the step in the protrusion insertion groove and will make described the
Two structures are in conjunction with first structure, comprising:
Solidification glue is added in the groove, then the protrusion is inserted into the groove, it is ultraviolet to be heating and curing, by described the
Two structures are in conjunction with first structure.
The preparation method of the QLED device, wherein the first electrode and/or second electrode are transparent electrode.
The preparation method of the QLED device, wherein the width of the protrusion is 0.1 ~ 0.5mm.
The preparation method of the QLED device, wherein the boundary of the first quantum dot layer of centre distance of the protrusion or
The boundary minimum distance of second quantum dot layer luminescent layer is 0.1 ~ 0.5cm.
The preparation method of the QLED device, wherein material used in the first quantum dot light emitting layer of deposition and deposition the
Material used in two quantum dot light emitting layers is identical.
The preparation method of the QLED device, wherein first quantum dot light emitting layer and the second quantum dot light emitting layer
Material be red light quantum point, green light quantum point, blue light quantum point, gold-tinted quantum dot, infrared light quantum dot and ultraviolet light quantum
One of point is a variety of.
The preparation method of the QLED device, wherein the groove and raised uniform intervals setting.
The utility model has the advantages that accordingly also being set in the second substrate by the way that several grooves and/or protrusion are arranged in the first substrate
Several grooves and protrusion are set, and matches the surface texture of the first substrate and the surface texture of the first substrate, then first
First electrode and the second quantum dot light emitting layer are deposited in substrate, and second electrode and the second quantum dot light emitting are deposited in the second substrate
Then layer passes through the cooperation fixation of the groove and bulge-structure in the first substrate and the second substrate and makes the first quantum dot light emitting layer
It is combined together with the second quantum dot light emitting layer, forms complete quantum dot light emitting layer, so that QLED device is prepared, it should
QLED device architecture can satisfy eurymeric QLED device or transoid QLED requirement on devices, because the first quantum dot light emitting layer is last
It is deposited on the upper surface of first structure, it is thus possible to avoid first electrode or the system of other function layer below the first quantum dot light emitting layer
Standby process impacts the first quantum dot light emitting layer, and the second quantum dot light emitting layer is finally be deposited on the second structure upper
Face, it is thus possible to which solvent sends out quantum dot when sedimentation being avoided to prepare the second motor or other function layer below the second quantum dot
Photosphere washes away and corrodes, thus by the method for the invention the quantum dot light emitting layer of preparation-obtained QLED device not by electrode
And the influence of other functional layer preparation process, there is preferable luminous efficiency.
Detailed description of the invention
Fig. 1 is the preferred embodiment flow diagram of the preparation method of QLED device of the present invention.
Fig. 2 is the diagrammatic cross-section of the preferred embodiment of the first substrate of the present invention.
Fig. 3 is the top view of the preferred embodiment of the first substrate of the present invention.
Fig. 4 is the diagrammatic cross-section of the preferred embodiment of the second substrate of the present invention.
Fig. 5 is the top view of the preferred embodiment of the second substrate of the present invention.
Fig. 6 is the combination schematic diagram of the second structure and first structure of the present invention.
Fig. 7 is the structural schematic diagram of QLED device obtained in embodiment 1.
Fig. 8 is the structural schematic diagram of QLED device obtained in embodiment 2.
Specific embodiment
The present invention provides a kind of preparation method of QLED device, to make the purpose of the present invention, technical solution and effect more
Clear, clear, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only used to
It explains the present invention, is not intended to limit the present invention.
The preparation method of QLED device of the present invention, as shown in Figure 1, comprising steps of
100, the first substrate is provided, the upper surface of first substrate has several grooves and/or protrusion, in first base
First electrode is deposited on bottom, is deposited the first quantum dot light emitting layer on the first electrode, is obtained first structure；
200, the second substrate is provided, the upper surface of second substrate is several convex with matching with the structure in the first substrate
Rise and/or groove, deposit second electrode in second substrate, deposit the second quantum dot light emitting in the second electrode
Layer, obtains the second structure；
300, the protrusion is inserted into the groove and makes second structure in conjunction with first structure, obtain QLED device.
Pre-prepared QLED device using quantum dot light emitting layer as boundary, is divided into two part QLED devices, and divide by the present invention
The two parts QLED device is not prepared by the structural order of top layer of quantum dot light emitting layer, because quantum dot light emitting layer is most
Prepare afterwards, first electrode, second electrode have been formed, the formation of the quantum dot light emitting layer of two such part QLED not by
The preparation process of electrode or other function layer influence, thus the quantum dot light emitting layer of two part QLED devices can guarantee compared with
Good luminous efficiency, then by the way that the quantum dot light emitting layer of two part QLED devices is combined together to form one layer of quantum dot hair
Photosphere, to obtain a complete QLED device.
Above-mentioned steps are described in detail below by specific embodiment.
In the step 100, the first substrate is provided, the upper surface of first substrate has several grooves and/or several
Protrusion deposits first electrode in first substrate, then deposits the first quantum dot light emitting layer on the first electrode, forms institute
The material for stating the first quantum dot light emitting layer is red light quantum point, green light quantum point, blue light quantum point, gold-tinted quantum dot, infrared light
One of quantum dot and ultraviolet light quantum dot are a variety of, wherein and deposition method can be also possible to liquid deposition with vapor deposition,
But it must assure that first quantum dot light emitting layer is located at top layer namely first quantum dot light emitting layer eventually forms, from
And form the first structure as one of two part QLED devices.Its height is no more than after having deposited the first quantum dot light emitting layer
The height of the protrusion, not influence the operation of subsequent protrusion insertion groove.
Preferably, first electrode can be the metal electrodes such as Ag, Al, Cu, Mo or Au.
Specifically, it can be and first deposit first electrode in the first substrate, first substrate is glass or flexiplast
Deng, then the first quantum dot light emitting layer is deposited on the electron transport layer, it is possible to understand that, the quantum dot light emitting layer should deposit
In the region defined by groove and protrusion, the light-emitting function to guarantee device is unaffected；Then the pressure of 20 ~ 80MPa is used
Power handles 5 ~ 30mins, is pressed together, and forms the first structure with several protrusions and/or groove.
Specifically, after depositing first electrode in first substrate, the first quantum is deposited on the first electrode
Before point luminescent layer, further comprises the steps of: and deposit the first functional layer on the first electrode.That is the first quantum is being deposited
The electronic works ergosphere such as the second functional layer, such as electron transfer layer can also be deposited on the first electrode before point luminescent layer.
Preferably, the electron transfer layer can be N-shaped ZnO, TiO of common positro transmission performance2, can also be low work function
The metals such as Ca, Ba can also be ZrO2, CsF, LiF, CsCO3With compound-materials such as Alq3 or be other high performance electronics
Transmission material TPBi.Preferably, the electron transfer layer with a thickness of 10-150nm.Preferred electron transfer layer is ZnO, and with
The mode of spin coating deposits to be formed on the first electrode, spin coating revolving speed be 3000rpm, this layer with a thickness of 30nm.
It should be understood that first functional layer should be deposited in region defined by groove and protrusion, to guarantee device
Light-emitting function it is unaffected.
In the step 200, the second substrate is provided, the upper surface of second substrate has the upper surface with the first substrate
To the structure of cooperation, namely with in the first substrate groove and/or protrusion match it is several protrusion and/or grooves,
It is several and matching grooves protrusions in the second substrate i.e. if the first upper surface of substrate is several grooves；And if
First substrate is several protrusions, then is several protrusions to match with the groove in the second substrate；Then described
Second electrode is deposited in second substrate, deposits the second quantum dot light emitting layer in the second electrode, it is possible to understand that, described
Two quantum dot light emitting layers should be deposited in the region of several protrusions or groove limit, to guarantee the light-emitting function of device not by shadow
It rings, and guarantees to answer the grafting of protrusion with groove；To obtain the second another structure as two part QLED devices.
Preferably, the material of second quantum dot light emitting layer is identical as the first quantum luminescent layer, after just can guarantee in this way
Continuous first quantum luminescent layer can be differently integrated into a whole with the two the second quantum dot light emitting layers without performance.
Preferably, first substrate is glass or flexiplast etc., the second electrode can be selected from patterned ITO or
The sheet metals electrode such as Al, Ag, Au, the ITO with a thickness of 20-300nm, the sheet metal electrode with a thickness of 5-
50nm。
Specifically, after depositing second electrode in second substrate, the second quantum is deposited in the second electrode
Before point luminescent layer, further comprises the steps of: and deposit the second functional layer in the second electrode.Namely depositing the second quantum dot hair
Before photosphere can also second functional layer such as deposition of hole functional layer on the second electrode, deposition method can be solwution method or
Vapour deposition method will not damage the second quantum dot light emitting layer.
It on the second electrode when deposition of hole functional layer, can be with vapor deposition or liquid deposition, preferably, being solution
Method deposition, in order to form uniform hole functional layer.The solwution method includes: ink-jet printing, spin-coating method, knife coating, leaching
Stain czochralski method, infusion method, spray coating method, roll coating process, casting method, slit coating method, strip rubbing method, these
More preferably, the hole functional layer can be hole transmission layer, hole injection layer, first with one layer in the second electrode
Then hole injection layer deposits one layer of hole transmission layer on the hole injection layer.
The material of the hole injection layer can be any one in NiO, CuO, CuS, VOx, WOx, MoOx；Or it is
Poly- (3,4- ethene dioxythiophene)-polystyrolsulfon acid (PEDOT:PSS), poly- (9,9- dioctyl fluorene-CO-N- (4- butyl benzene
Base) diphenylamines) (TFB), polyvinylcarbazole (PVK), N, N '-diphenyl-N, N '-two (3- aminomethyl phenyl) -1,1 '-biphenyl -4,
4 '-diamines (TPD), 4,4 ', 4 ' '-three (carbazole -9- base) triphenylamine (TCTA), 4,4'- bis- (9- carbazole) biphenyl (CBP), mCP,
Six cyano -1,4,5,8,9,12- of 2,3,6,7,10,11-, six azepine benzophenanthrene (HAT-CN) and N, N '-diphenyl-N, N '-(1-
Naphthalene) -1,1 '-biphenyl -4, the one or more in 4 '-diamines (NPB), preferably PEDOT:PSS, and be with spin speed
5000rpm spin coating and 15 min that anneal at 150 DEG C are formed.Preferably, the hole injection layer with a thickness of 10-150nm.
The material of the hole transmission layer can be any one in NiO, CuO, CuS, VOx, WOx, MoOx；Or it is
One of PEDOT:PSS, TFB, PVK, Poly-TPD, TCTA, CBP, HAT-CN or a variety of, preferably TFB, and with spin coating
Speed 3000rpm spin coating forms, and is then formed in 150 DEG C of 30 min of annealing.
Preferably, the step 100 and step 200, the sectional area of the groove are greater than the sectional area of the protrusion, to protect
Card protrusion can be easier inserted into the groove.
Obviously, institute is fluted is provided with N number of, then the protrusion is again provided with N number of.Preferably, several grooves and
Raised uniform intervals setting, will not tilt towards some direction when guaranteeing first structure in conjunction with the second structure, cause device
Situations such as part cracking or poor contact.If namely either several grooves be disposed in an evenly spaced relation on the first quantum luminescent layer and
Dry protrusion is disposed in an evenly spaced relation on the second quantum luminescent layer, is also possible to several protrusions and is disposed in an evenly spaced relation in the second quantum hair
On photosphere and several grooves are disposed in an evenly spaced relation on the first quantum luminescent layer.Two points are at least arranged in the protrusion and groove,
It can be even number or odd number, such as three or four, be symmetrical arranged as long as being ensured of.
The structure of the protrusion can be rectangular, is also possible to circle, and correspondingly, the recess of the groove is also square or justifies
Shape, it is preferable that its shape of the raised points of fixed point and the shape of groove are consistent, and that is to say that groove is square, and protrusion is also in
It is rectangular；Groove is rounded, and protrusion is also square.The depth of the groove is less than or equal to the half of substrate thickness, and protrusion
Height be less than the depth of groove, to guarantee that protrusion can be accommodated completely by groove.
Preferably, the width of the protrusion is 0.1 ~ 0.5mm, and protrusion will affect greatly very much the luminous zone of device, too small to be easy
Fracture.
Preferably, the boundary minimum distance of the first substrate of centre distance of the protrusion or the second substrate is 0.1 ~ 0.5cm,
Distance is too small, and setting and binding operation are inconvenient, apart from the too far area that can occupy active region, influences device.
Certainly it before forming the first quantum dot light emitting layer and the second quantum luminescent layer, can also be formed including interfactial work ergosphere
Or the other functions layer such as interface-modifying layer, including but not limited to electronic barrier layer, hole blocking layer, electrode modification layer, isolation are protected
One of sheath is a variety of.
In the step 300, the protrusion is inserted into groove and makes second structure in conjunction with first structure, it is described
First quantum dot light emitting layer and the second quantum dot light emitting layer are combined into a quantum dot light emitting layer, to obtain one completely
QLED device.
Specifically, the protrusion is inserted into groove and makes second structure in conjunction with first structure by the step, wraps
It includes:
Solidification glue is added in the groove, then the protrusion is inserted into the groove, it is ultraviolet to heat while carrying out high pressure
Processing solidifies adhesive curing and second structure is closely linked with first structure integral.
Because the first quantum dot light emitting layer and the second quantum dot light emitting layer are deposited on corresponding portion QLED device most
Upper layer, it is thus possible to avoid the preparation process pair for the first electrode and electron transfer layer etc. being located at below the first quantum dot light emitting layer
The preparation of first quantum dot light emitting layer impacts, also can be avoided the second motor below the second quantum dot light emitting layer and
The preparation process of hole functional layer etc. impacts the preparation of the first quantum dot light emitting layer, namely uses method system of the invention
Standby QLED device, electrode, electron transfer layer, hole functional layer preparation method will not be limited by temperature and solvent, high temperature is not
It will lead to the quenching of final quantum point luminescent layer, solvent will not corrode final quantum dot light emitting layer, influence its luminous efficiency.
In the preparation method of the QLED device, the first electrode and/or second electrode are transparent electrode, Ye Ji
At least one is transparent electrode for one electrode and second electrode, to guarantee the light out of QLED device.
As can be seen that the preparation method of QLED device provided by through the invention, can both prepare eurymeric QLED device,
Transoid QLED can also be prepared.
As one embodiment of the invention, the preparation method of QLED device provided by the present invention, comprising steps of
The first substrate is provided, upper surface surrounding has been evenly spaced on several square grooves, as shown in Figure 2,3, in the first base
First electrode is deposited on bottom, deposits the first quantum dot light emitting layer on the first electrode, and on the first quantum dot light emitting layer
Surface forms several square grooves being evenly spaced on, and obtains first structure；
The second substrate is provided, upper surface surrounding has been evenly spaced on several square protrudings, as shown in Figure 4,5, in the second base
Second electrode is deposited on bottom, in the second electrode deposition of hole functional layer, the deposition and first in the hole functional layer
Identical second quantum dot light emitting layer of quantum dot light emitting layer material, obtains the second structure；
The square protruding is inserted into square groove and makes second structure in conjunction with first structure, as shown in fig. 6, obtaining
QLED device.
Below by embodiment, the present invention is described in detail.
Embodiment 1
Upper surface surrounding have several grooves substrate Substrate(glass or flexiplast) on by heat steam method steam
The Ag electrode of one layer of 20nm of plated deposition；
With the revolving speed of 3000rpm, it is ZnO electron-transport that deposit a layer thickness on Ag electrode by solution spin-coating method, which be 30nm,
Layer；
And then one layer of luminescent layer is deposited, this layer can be common red, green, blue and yellow light quantum and infrared and ultraviolet light quantity
At least one of son point；With the spin speed of 6000rpm, quantum dot concentration 20mg/mL, deposited on ZnO electron transfer layer
One layer of the first QDs layer 101, obtains first structure Ag/ZnO/QDs；
There are several protrusions being adapted to the groove and the substrate containing electrode ITO in upper surface, pass through rotation on electrode ITO
Coating deposits one layer of PEDOT:PSS hole injection layer, and spin speed 5000rpm, 150 DEG C of 15 min of annealing are formed；
One layer of TFB hole transmission layer, spin speed 3000rpm, 150 DEG C of 30 min shapes of annealing are deposited on hole injection layer
At；
With quantum dot concentration 20mg/ml, spin speed 6000rpm, one layer of deposition is identical as the first QDs on hole injection layer
2nd QDs layer 102 of material, obtains the second structure I TO/PEDOT/TFB/QDs；
Appropriate solidification glue is added in the groove, and then closes the second structural cover in the first knot the protrusion insertion groove
On structure and under the pressure of 50Mpa, 10min is handled, 80 DEG C of heating then are carried out to the substrates of two sides, and to its ultraviolet irradiation,
After to be processed, after pressure is down to normal pressure, QLED device as shown in Figure 7 is obtained.
Embodiment 2
Upper surface surrounding have several grooves substrate Substrate(glass or flexiplast) on by heat steam method steam
The Ag electrode of one layer of 20nm of plated deposition；
With the revolving speed of 3000rpm, it is ZnO electron-transport that deposit a layer thickness on Ag electrode by solution spin-coating method, which be 30nm,
Layer；
And then one layer of luminescent layer is deposited, this layer can be common red, green, blue and yellow light quantum and infrared and ultraviolet light quantity
At least one of son point；With the spin speed of 6000rpm, quantum dot concentration 20mg/mL, deposited on ZnO electron transfer layer
One layer of the first QDs layer 201, obtains first structure Ag/ZnO/QDs；
One layer of 20nm thickness is deposited in the substrate that upper surface has several protrusions being adapted to the groove in the method for hot evaporation
Ag electrode, then deposit one layer of PEDOT:PSS hole injection layer on the Ag electrode, spin speed 5000rpm, 150 DEG C
15 min that anneal are formed；
One layer of PVK hole transmission layer, spin speed 3000rpm, 150 DEG C of 30 min shapes of annealing are deposited on hole injection layer
At；
With quantum dot concentration 20mg/ml, spin speed 6000rpm, one layer of deposition is identical as the first QDs on hole injection layer
2nd QDs layer 202 of material, obtains the second structure Ag/PEDOT/PVK/QDs；
Appropriate solidification glue is added in the groove, and then closes the second structural cover in the first knot the protrusion insertion groove
On structure and under the pressure of 50Mpa, 5min is handled, 80 DEG C of heating then are carried out to the substrates of two sides, and to its ultraviolet irradiation, to
After treatment after pressure is down to normal pressure, obtains QLED device as shown in Figure 8.
In conclusion the present invention provides a kind of preparation method of QLED device, it is several by being arranged in the first substrate
Groove and/or protrusion are accordingly also provided with several grooves and protrusion in the second substrate, and make the surface texture of the first substrate with
The surface texture of first substrate matches, and first electrode and the second quantum dot light emitting layer are then deposited in the first substrate, the
Second electrode and the second quantum dot light emitting layer are deposited in two substrates, then by the first substrate in the second substrate groove with it is convex
It plays the cooperation fixation of structure and is combined together the first quantum dot light emitting layer with the second quantum dot light emitting layer, form complete amount
Son point luminescent layer, so that QLED device be prepared, which can satisfy transoid QLED requirement on devices, Er Qieyin
It is finally to be deposited on the upper surface of first structure for the first quantum dot light emitting layer, it is thus possible to avoid below the first quantum dot light emitting layer
First electrode or the preparation process of other function layer impact the first quantum dot light emitting layer, and the second quantum dot light emitting layer is
Finally be deposited on the upper surface of second structure, it is thus possible to avoid sedimentation prepare the second quantum dot below the second motor or other
Solvent washing away and corrode to quantum dot light emitting layer when functional layer, thus preparation-obtained QLED device by the method for the invention
Quantum dot light emitting layer do not influenced by other function layer preparation process, have preferable luminous efficiency.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (12)
1. a kind of preparation method of QLED device, which is characterized in that comprising steps of
The first substrate is provided, the upper surface of first substrate has several grooves and/or protrusion, sinks in first substrate
Product first electrode, deposits the first quantum dot light emitting layer on the first electrode, obtains first structure；
The second substrate is provided, the upper surface of second substrate has several protrusions matched with the structure in the first substrate
And/or groove, second electrode is deposited in second substrate, deposits the second quantum dot light emitting layer in the second electrode,
Obtain the second structure；
The protrusion is inserted into the groove and makes second structure in conjunction with first structure, obtains QLED device.
2. the preparation method of QLED device according to claim 1, which is characterized in that deposit in first substrate
After one electrode, before depositing the first quantum dot light emitting layer on the first electrode, further comprise the steps of: in the first electrode
The first functional layer of upper deposition.
3. the preparation method of QLED device according to claim 1, which is characterized in that deposit in second substrate
After two electrodes, before depositing the second quantum dot light emitting layer in the second electrode, further comprise the steps of: in the second electrode
The second functional layer of upper deposition.
4. the preparation method of QLED device according to claim 1, which is characterized in that the protrusion and the groove phase
Match.
5. the preparation method of QLED device according to claim 4, which is characterized in that the sectional area of the groove is greater than institute
State the sectional area of protrusion.
6. the preparation method of QLED device according to claim 1, which is characterized in that the protrusion is inserted by the step
In the groove and make second structure in conjunction with first structure, comprising:
Solidification glue is added in the groove, then the protrusion is inserted into the groove, it is ultraviolet to be heating and curing, by described the
Two structures are in conjunction with first structure.
7. the preparation method of QLED device according to claim 1, which is characterized in that the first electrode and/or second
Electrode is transparent electrode.
8. the preparation method of QLED device according to claim 1, which is characterized in that the width of the protrusion is
0.1~0.5mm。
9. the preparation method of QLED device according to claim 1, which is characterized in that the centre distance first of the protrusion
The boundary minimum distance of the boundary of quantum dot layer or the second quantum dot light emitting layer is 0.1 ~ 0.5cm.
10. the preparation method of QLED device according to claim 1, which is characterized in that the first quantum dot light emitting layer of deposition
Material used is identical as material used in the second quantum dot light emitting layer of deposition.
11. the preparation method of QLED device according to claim 1, which is characterized in that first quantum dot light emitting layer
Material with the second quantum dot light emitting layer is red light quantum point, green light quantum point, blue light quantum point, gold-tinted quantum dot, infrared light
One of quantum dot and ultraviolet light quantum dot are a variety of.
12. the preparation method of QLED device according to claim 1, which is characterized in that between the groove and protrusion are uniform
Every setting.
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| US20050009227A1 (en) * | 2003-07-11 | 2005-01-13 | Xiao Steven Shuyong | Organic semiconductor devices and methods of fabrication |
| US20150021567A1 (en) * | 2013-07-19 | 2015-01-22 | Samsung Display Co., Ltd. | Organic light emitting diode display |
| WO2015143843A1 (en) * | 2014-03-27 | 2015-10-01 | 京东方科技集团股份有限公司 | Display panel and packaging method therefor and display device |
| CN105140418A (en) * | 2015-08-25 | 2015-12-09 | 深圳市华星光电技术有限公司 | Organic light-emitting diode packaging part and display apparatus comprising same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050009227A1 (en) * | 2003-07-11 | 2005-01-13 | Xiao Steven Shuyong | Organic semiconductor devices and methods of fabrication |
| US20150021567A1 (en) * | 2013-07-19 | 2015-01-22 | Samsung Display Co., Ltd. | Organic light emitting diode display |
| WO2015143843A1 (en) * | 2014-03-27 | 2015-10-01 | 京东方科技集团股份有限公司 | Display panel and packaging method therefor and display device |
| CN105140418A (en) * | 2015-08-25 | 2015-12-09 | 深圳市华星光电技术有限公司 | Organic light-emitting diode packaging part and display apparatus comprising same |
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Application publication date: 20190705 |