CN109579818B - Preparation method of hybrid integrated fiber-optic gyroscope optical chip - Google Patents
Preparation method of hybrid integrated fiber-optic gyroscope optical chip Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor technology, in particular to a preparation method of a hybrid integrated optical fiber gyroscope optical chip, the chip comprises a substrate, a light source, a silicon-based 3dB coupler, a lithium niobate Y-branch phase modulator and a signal detector, wherein the silicon-based 3dB coupler is based on a silicon-based silica optical waveguide technology and comprises a Y-branch waveguide, two 90-degree circular waveguides, a conical waveguide and two straight waveguides which are mutually communicated, the wide end of the conical waveguide is used as an optical input port of the optical chip, the light source is opposite to the optical input port, the straight waveguide connected with the Y branch is used as a signal output port of the optical chip, the photosensitive surface of the signal detector is opposite to the signal output port, the straight waveguide connected with the 90-degree arc waveguide is used as an optical transmission port and is spliced and fixed with the fundamental wave guide end surface of the lithium niobate Y-branch phase modulator 3 through a waveguide coupling process. The invention eliminates the fusion point of the optical fiber, and has the advantages of high integration level, small volume, low power consumption, good performance, good reliability and environmental adaptability, and the like.
Description
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a preparation method of a hybrid integrated optical fiber gyroscope optical chip.
Background
In military and civil applications such as aircraft and ship navigation, missile guidance, satellite orientation, geodetic surveying, astronomical telescope observation and tracking, automobile GPS system aided navigation, automobile automatic driving and the like, a small-sized, high-reliability and cheap inertia measurement device is required to be used. The fiber optic gyroscope is an all-solid-state inertial instrument which utilizes the Sagnac effect to sense the rotation or rotation angular rate, has the advantages of light weight, power consumption saving, low cost, long service life, insensitivity to acceleration, small volume, no moving part, good bias stability, small scale factor error and the like, and has better application prospect compared with a laser gyroscope or other electromechanical gyroscopes.
However, the existing fiber optic gyroscope system has certain technical defects: the system is composed of a plurality of discrete components which are respectively packaged, and the system is large in volume; the optical fiber welding points are many, so that faults are easy to occur, and the environmental adaptability and reliability of the system are poor; the cost is high, the engineering production is not facilitated, each discrete component needs to be coupled with the tail fiber of the device, the working procedures are multiple and complex, the coupling efficiency is low, and the system repeatability is difficult to guarantee. In order to meet the more strict requirements for volume, mass, power consumption, and the like in the fields of space applications and the like, research on small-sized and integrated optical gyroscopes has become an inevitable trend.
The prior advanced interference type optical fiber gyroscope optical path system mainly comprises a superradiation light emitting diode, an optical fiber coupler, a lithium niobate multifunctional integrated optical Y waveguide modulator, an optical fiber ring and a photoelectric detector, mainly depends on a lithium niobate multifunctional integrated optical modulator chip and is used for realizing phase modulation and optical beam splitter functions required by an inertial measurement system, but because the lithium niobate waveguide has larger bending loss, the inclination angle is usually between 3 and 5 degrees, the size is larger, the compatibility of the manufacturing process and the semiconductor process and the integration capability of the manufacturing process and the semiconductor photonic device are poorer, the cost is higher, and the further integration and miniaturization of the optical fiber gyroscope are limited.
Disclosure of Invention
Technical problem to be solved
The technical problem to be solved by the invention is as follows: how to provide a preparation method of a hybrid integrated fiber-optic gyroscope optical chip with miniaturization, high integration level, high reliability and low cost.
(II) technical scheme
In order to solve the above technical problem, the present invention provides a method for preparing a hybrid integrated fiber-optic gyroscope optical chip, where the hybrid integrated fiber-optic gyroscope optical chip 100 prepared by the method includes: the device comprises a substrate 1, a light source 2, a silicon-based 3dB coupler 3, a lithium niobate Y-branch phase modulator 4 and a signal detector 5;
the light source 2, the silicon-based 3dB coupler 3, the lithium niobate Y-branch phase modulator 4 and the photoelectric detector 5 are mixed and integrated on the substrate 1;
the lithium niobate Y-branch phase modulator 4 is a lithium niobate-based proton exchange type waveguide;
the silicon-based 3dB coupler 3 is based on a silicon-based silica optical waveguide manufacturing technology, a substrate material is silicon, a waveguide cladding material is silica, and a waveguide core layer material is germanium-doped silica;
the silicon-based 3dB coupler 3 comprises a Y-branch waveguide 3-3, a first 90-degree arc waveguide 3-4, a second 90-degree arc waveguide 3-5, a tapered waveguide 3-1, a first straight waveguide 3-2 and a second straight waveguide 3-6 which are mutually communicated, one branch of the Y-branch 3-3 is connected with the narrow end of the tapered waveguide 3-1, the wide end of the tapered waveguide 3-1 is used as an optical input port of an optical chip, the light source 2 is right opposite to the optical input port, the other branch of the Y-branch 3-3 is connected with the first straight waveguide 3-2 to be used as a signal output port of the optical chip, and the photosensitive surface of the signal detector 5 is right opposite to the signal output port; the fundamental wave guide of the Y-branch waveguide 3-3 is connected with a first 90-degree arc 3-4 and a second 90-degree arc 3-5 which are connected in reverse, the other end of the second 90-degree arc 3-5 is connected with one end of a second straight waveguide 3-6, and the other end face of the second straight waveguide 3-6 is used as an optical transmission port and is spliced and fixed with the end face of the fundamental wave guide of the lithium niobate Y-branch phase modulator 4 through a waveguide coupling process; two branch ends of the lithium niobate Y-branch phase modulator 4 are respectively a first tail fiber coupling port 6 and a second tail fiber port 7, and two sides of each branch are provided with metal modulation electrodes 8;
in the silicon-based 3dB coupler 3, the refractive index of a core layer is greater than that of a cladding layer, and the difference between the refractive index of the core layer and that of the cladding layer is preferably 0.75-1.5%;
the 3dB coupler 3 chip is a parallelogram, the inner angle α is 75 +/-0.5 degrees, the length is 12-20 mm, the width is 7-14 mm, the thickness of the silicon substrate is 0.52-1 mm, the thickness of the SiO2 cladding is 10-30 mu m, the cross section of the SiO2 Ge core layer is a rectangle, the length is 3-7 mu m, and the width is 3-6.5 mu m;
the substrate thickness of the lithium niobate Y-branch phase modulator 4 is 0.5-0.98 mm, the substrate thickness is slightly thinner than that of a silicon substrate, the cross section of a waveguide core layer is rectangular, the length is 4-7 mu m, the width is 3-5 mu m, the lithium niobate Y-branch phase modulator 4 is a parallelogram, the internal angle β is 80 +/-0.5 degrees, the length is 1.5-2 cm, and the width is 2-3 mm;
the substrate 1 is made of silicon, AlN or other high-heat-conductivity materials, is rectangular, and has the length of 35-43 mm, the width of 10-20 mm and the thickness of 0.52-1 mm;
the curvature radius of the first 90-degree bent waveguide 3-4 is the same as that of the first 90-degree bent waveguide 3-5, and is 2.5-5 mm;
the cross section of the wide-end waveguide core layer of the tapered waveguide 3-1 is rectangular, and the length of the wide-end waveguide core layer is as follows: 6-12 μm, 4-6.5 μm width, tapered waveguide length: 500 to 1000 μm;
ultraviolet glue is preferably selected on the first straight waveguide end face 1 of the 3dB coupler 3 and the fundamental wave guide end face of the lithium niobate Y-branch modulator 4 for splicing and fixing;
the light source 2 consists of a super-radiation light-emitting diode (SLD) chip 9 and an SLD carrier 10, wherein the SLD chip 9 is reversely buckled on the SLD carrier 10, and the SLD carrier 10 provides mechanical support and electrical interconnection for the SLD chip 9;
the SLD carrier 10 is a parallelogram, the internal angle gamma is 6 +/-0.3 degrees, and the length is as follows: 2mm, width: 1 mm: the height is the sum of the thickness of the silicon substrate of the 3dB coupler and the thickness of the SiO2 cladding, and the error is controlled within-3 mu m; a corresponding metal pattern structure is manufactured on the SLD carrier 10 to be used as a lead bonding pad, and meanwhile, when active alignment coupling is carried out on the SLD and the 3dB coupler tapered waveguide 3-1, electrical connection can be at least provided for one end of an SLD chip;
the photoelectric detector 4 consists of a photoelectric diode chip 11 and a detector carrier 12, wherein the photoelectric diode chip 11 is a surface incidence type InGaAs photoelectric diode and is arranged on the detector carrier 12, the photoelectric diode chip 11 can be vertically arranged by vertically arranging the carrier, so that the photosensitive surface of the photoelectric diode chip 11 is opposite to the first straight waveguide port 3-2 of the 3dB coupler, and the detector carrier 12 simultaneously provides mechanical support, electrical interconnection and operation convenience;
specifically, the preparation method comprises the following steps:
step 1: designing and cutting a substrate 1, a substrate of the lithium niobate Y-branch phase modulator 4 and a silicon substrate of the 3dB coupling 3 according to the size of the chip;
step 2: depositing a SiO2 film on a silicon substrate as a buffer layer by combining a PECVD method and ICP etching; growing a germanium-doped SiO2 film on the SiO2 film, wherein the thickness of the germanium-doped SiO2 film is the thickness of the waveguide core layer; photoetching and etching processes are carried out on the components of SiO 2: forming a core layer waveguide pattern on the Ge film; depositing a SiO2 film on the surface of the substrate, and annealing to obtain a 3dB coupler;
and step 3: according to the graphic design of the lithium niobate Y-branch phase modulator 4, a Y-branch waveguide is manufactured on a lithium niobate substrate by adopting photoetching, proton exchange and annealing processes; then, manufacturing modulation electrodes 8 on two sides of each branch of the Y-branch waveguide by adopting a photoetching process;
and 4, step 4: polishing and grinding the waveguide input and output ports of the 3dB coupler 3 and the Y waveguide modulator 4; metallizing the other two sides of the Y waveguide modulator to eliminate the influence of pyroelectric and stray light;
and 5: fixing a second straight waveguide end 3-6 of the 3dB coupler and a straight waveguide end 4-1 of the lithium niobate Y waveguide modulator through a waveguide coupling process;
step 6: adhering the spliced 3dB coupler 3 and the lithium niobate Y waveguide modulator 4 on a substrate by using a chip mounter;
and 7: processing the SLD carrier 10 according to the pattern design of the SLD carrier 10, then manufacturing a metal lead pattern on the front surface of the SLD carrier 10, wherein the thickness of the metal pattern is 0.5-1 mu m, and bonding the back surface of the SLD carrier 10 on a light source area on a substrate by adopting a chip mounter;
and 8: adopting a mechanical arm of a precise adjusting frame to reversely buckle the SLD chip 9 on the SLD carrier 10 to realize electric coupling and coarse alignment, then combining a probe table to electrify a lead area of the SLD carrier 10 to enable the SLD to work, finely adjusting the SLD carrier 10 to be aligned with an input waveguide of the 3dB coupler 3 by an active alignment method, and finally heating and curing conductive adhesive;
and step 9: processing a detector carrier 12 according to the description of the detector carrier 12, manufacturing a metal lead pattern on the front surface of the detector carrier, wherein the thickness of the metal pattern is about 0.5-1 mu m, and then accurately positioning and bonding a photodiode chip 11 on the detector carrier 12 by using a precise chip mounter to ensure that the distance from the center of a photosensitive surface to the lower edge of the detector carrier is the sum of the thickness of a 3dB coupler silicon substrate and the thickness of a SiO2 cladding;
step 10: and vertically bonding a detector carrier 12 on the substrate 1 by adopting a precise adjusting frame, aligning the photosensitive surface of the signal detector 5 with the signal detection waveguide end surface of the 3dB coupler 3 by an active alignment method, and then heating and curing to obtain the hybrid integrated optical fiber gyroscope optical chip.
And 5, fixing by adopting ultraviolet glue.
And in the step 6, conductive silver paste with good thermal conductivity and good electrical conductivity is used as an adhesive.
And in the step 8, the SLD chip 9 is reversely buckled on the SLD carrier 10 by adopting a mechanical arm of a precision adjusting frame, and conductive silver paste is used as an adhesive.
In step 9, the distance between the center of the photosensitive surface and the lower edge of the detector carrier is ensured to be the sum of the thickness of the 3dB coupler silicon substrate and the thickness of the SiO2 cladding, and the error is controlled within +/-10 mu m.
(III) advantageous effects
The invention relates to a method for preparing a hybrid integrated fiber optic gyroscope chip designed for miniaturization and photoelectric high-integration fiber optic gyroscope, which adopts a hybrid integrated optical path with a full guided wave structure to integrate other optical devices in a fiber optic gyroscope optical system, except for an optical fiber ring, including a light source, a signal detector, a 3dB coupler and a Y waveguide modulator on the same substrate,
the invention utilizes the characteristics of small size, high coupling efficiency, smaller bending loss, low transmission loss, easy integration and low cost of the silica-based optical waveguide, two 90-degree arc waveguides are integrated on the first Y-branch waveguide fundamental waveguide in the silica-based 3dB coupler and are communicated with the second Y-branch fundamental waveguide of the lithium niobate Y-waveguide modulator at a certain distance in a staggered manner, so that the requirement of reciprocity is met, the influence of the radiation light of the first Y-branch waveguide substrate on the second Y-branch waveguide is avoided, and in addition, the mode field matching degree of the silica-based optical waveguide and the lithium niobate waveguide is high, and the silica-based optical waveguide has the advantage of low insertion loss;
according to the preparation method, the SLD carrier and the detector carrier are designed, so that a light source and a detector can be integrated, the integration level of an optical system of the optical fiber gyroscope is improved, the integral structure of the optical fiber gyroscope is more compact, and the reliability and the environmental adaptability of the optical fiber gyroscope are improved. In addition, the high-thermal-conductivity material is used as the substrate of the chip, and the TEC can be adopted to carry out integral temperature control on the chip, so that stable output of a light source and stability of a light path coupling structure are facilitated, and the temperature adaptability of the gyroscope is improved.
Compared with the traditional optical fiber gyroscope in which optical devices are mutually independent and driving circuit systems are separated, the optical chip has high integration level, mature preparation process and convenient packaging.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a hybrid integrated fiber optic gyroscope optical chip.
FIG. 2 is a schematic diagram of a silicon-based 3dB coupler in a hybrid integrated fiber optic gyroscope chip.
Fig. 3 is a schematic structural diagram of a lithium niobate Y waveguide modulator in a hybrid integrated fiber optic gyroscope optical chip.
Fig. 4 is a schematic structural diagram of a fiber-optic gyroscope optical path system based on a hybrid integrated fiber-optic gyroscope optical chip.
The main labels in the figure illustrate: the device comprises a substrate 1, a light source 2, a silicon-based 3dB coupler 3, a lithium niobate Y-branch phase modulator 4, a signal detector 5, a first tail fiber coupling port 6, a second tail fiber port 7, a metal modulation electrode 8, an SLD chip 9, an SLD carrier 10, a photodiode chip 11, a detector carrier 12 and an optical fiber ring 13.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
In order to solve the problems in the prior art, the present invention provides a hybrid integrated fiber-optic gyroscope optical chip, as shown in fig. 1 to 4, where the hybrid integrated fiber-optic gyroscope optical chip 100 includes: the device comprises a substrate 1, a light source 2, a silicon-based 3dB coupler 3, a lithium niobate Y-branch phase modulator 4 and a signal detector 5;
the light source 2, the silicon-based 3dB coupler 3, the lithium niobate Y-branch phase modulator 4 and the photoelectric detector 5 are mixed and integrated on the substrate 1;
the lithium niobate Y-branch phase modulator 4 is a lithium niobate-based proton exchange type waveguide;
the silicon-based 3dB coupler 3 is based on a silicon-based silica optical waveguide manufacturing technology, a substrate material is silicon, a waveguide cladding material is silica, and a waveguide core layer material is germanium-doped silica;
the silicon-based 3dB coupler 3 comprises a Y-branch waveguide 3-3, a first 90-degree arc waveguide 3-4, a second 90-degree arc waveguide 3-5, a tapered waveguide 3-1, a first straight waveguide 3-2 and a second straight waveguide 3-6 which are mutually communicated, one branch of the Y-branch 3-3 is connected with the narrow end of the tapered waveguide 3-1, the wide end of the tapered waveguide 3-1 is used as an optical input port of an optical chip, the light source 2 is right opposite to the optical input port, the other branch of the Y-branch 3-3 is connected with the first straight waveguide 3-2 to be used as a signal output port of the optical chip, and the photosensitive surface of the signal detector 5 is right opposite to the signal output port; the fundamental wave guide of the Y-branch waveguide 3-3 is connected with a first 90-degree arc 3-4 and a second 90-degree arc 3-5 which are connected in reverse, the other end of the second 90-degree arc 3-5 is connected with one end of a second straight waveguide 3-6, and the other end face of the second straight waveguide 3-6 is used as an optical transmission port and is spliced and fixed with the end face of the fundamental wave guide of the lithium niobate Y-branch phase modulator 4 through a waveguide coupling process; two branch ends of the lithium niobate Y-branch phase modulator 4 are respectively a first tail fiber coupling port 6 and a second tail fiber port 7, and two sides of each branch are respectively provided with a metal modulation electrode 8.
In the silicon-based 3dB coupler 3, the refractive index of a core layer is larger than that of a cladding layer, and the difference between the refractive index of the core layer and the refractive index of the cladding layer is preferably 0.75-1.5%.
The 3dB coupler 3 chip is a parallelogram, the inner angle α is 75 +/-0.5 degrees, the length is 12-20 mm, the width is 7-14 mm, the thickness of the silicon substrate is 0.52-1 mm, the thickness of the SiO2 cladding is 10-30 mu m, the cross section of the SiO2 Ge core layer is rectangular, the length is 3-7 mu m, and the width is 3-6.5 mu m;
the thickness of the substrate of the lithium niobate Y-branch phase modulator 4 is 0.5-0.98 mm, the substrate is slightly thinner than a silicon substrate, the cross section of a waveguide core layer is rectangular, the length is 4-7 mu m, the width is 3-5 mu m, the lithium niobate Y-branch phase modulator 4 is a parallelogram, the internal angle β is 80 +/-0.5 degrees, the length is 1.5-2 cm, and the width is 2-3 mm.
The substrate 1 is made of silicon, AlN or other high-heat-conduction materials, is rectangular, and is 35-43 mm in length, 10-20 mm in width and 0.52-1 mm in thickness.
The curvature radius of the first 90-degree bent waveguide 3-4 is the same as that of the first 90-degree bent waveguide 3-5, and the curvature radius is 2.5-5 mm.
The cross section of the wide-end waveguide core layer of the tapered waveguide 3-1 is rectangular, and the length of the wide-end waveguide core layer is as follows: 6-12 μm, 4-6.5 μm width, tapered waveguide length: 500 to 1000 μm.
Preferably, the first straight waveguide end face 1 of the 3dB coupler 3 and the fundamental waveguide end face of the lithium niobate Y-branch modulator 4 are spliced and fixed by ultraviolet glue.
The light source 2 is composed of a super-radiation light-emitting diode (SLD) chip 9 and an SLD carrier 10, wherein the SLD chip 9 is reversely buckled on the SLD carrier 10, the SLD carrier 10 provides mechanical support and electrical interconnection for the SLD chip 9, and AlN ceramic or silicon material with an insulating layer with high thermal conductivity, good insulation and good thermal expansion coefficient matching is preferably selected.
Wherein, the SLD carrier 10 is a parallelogram, the internal angle gamma is 6 +/-0.3 degrees, and the length is as follows: 2mm, width: 1 mm: the height is the sum of the thickness of the silicon substrate of the 3dB coupler and the thickness of the SiO2 cladding, and the error is controlled within-3 mu m; and a corresponding metal pattern structure is manufactured on the SLD carrier 10 to be used as a lead bonding pad, and meanwhile, when active alignment coupling is carried out on the SLD and the 3dB coupler tapered waveguide 3-1, electrical connection at least can be provided for one end of the SLD chip.
The photoelectric detector 4 is composed of a photoelectric diode chip 11 and a detector carrier 12, wherein the photoelectric diode chip 11 is a surface incidence type InGaAs photoelectric diode and is arranged on the detector carrier 12, the photoelectric diode chip 11 can be vertically arranged by vertically arranging the carrier, the photosensitive surface of the photoelectric diode chip 11 is opposite to the first straight waveguide port 3-2 of the 3dB coupler, the detector carrier 12 simultaneously provides functions of mechanical support, electrical interconnection, operation convenience and the like, and AlN ceramic materials with high thermal conductivity, good insulating property and good thermal expansion coefficient matching are preferably selected.
In addition, the invention also provides a preparation method for preparing the hybrid integrated optical fiber gyroscope optical chip, which comprises the following steps:
step 1: designing and cutting a substrate 1, a substrate of the lithium niobate Y-branch phase modulator 4 and a silicon substrate of the 3dB coupling 3 according to the size of the chip;
step 2: depositing a SiO2 film on a silicon substrate as a buffer layer by combining a PECVD method and ICP etching; growing a germanium-doped SiO2 film on the SiO2 film, wherein the thickness of the germanium-doped SiO2 film is the thickness of the waveguide core layer; photoetching and etching processes are carried out on the components of SiO 2: forming a core layer waveguide pattern on the Ge film; depositing a SiO2 film on the surface of the substrate, and annealing to obtain a 3dB coupler;
and step 3: according to the graphic design of the lithium niobate Y-branch phase modulator 4, a Y-branch waveguide is manufactured on a lithium niobate substrate by adopting photoetching, proton exchange and annealing processes; then, manufacturing modulation electrodes 8 on two sides of each branch of the Y-branch waveguide by adopting a photoetching process;
and 4, step 4: polishing and grinding the waveguide input and output ports of the 3dB coupler 3 and the Y waveguide modulator 4; metallizing the other two sides of the Y waveguide modulator to eliminate the influence of pyroelectric and stray light;
and 5: fixing a second straight waveguide end 3-6 of the 3dB coupler and a straight waveguide end 4-1 of the lithium niobate Y waveguide modulator through a waveguide coupling process, preferably fixing by ultraviolet glue;
step 6: the spliced 3dB coupler 3 and the lithium niobate Y waveguide modulator 4 are adhered to a substrate by a chip mounter, and conductive silver paste with good thermal conductivity and good electrical conductivity is preferably used as an adhesive;
and 7: processing the SLD carrier 10 according to the pattern design of the SLD carrier 10, then manufacturing a metal lead pattern on the front surface of the SLD carrier 10, wherein the thickness of the metal pattern is 0.5-1 mu m, and bonding the back surface of the SLD carrier 10 on a light source area on a substrate by adopting a chip mounter;
and 8: adopting a mechanical arm of a precise adjusting frame to reversely buckle the SLD chip 9 on the SLD carrier 10, preferably selecting conductive silver paste as a bonding agent, wherein the thickness is 1-3 mu m, realizing electric coupling and coarse alignment, then combining a probe table to electrify a lead area of the SLD carrier 10 to enable the SLD to work, finely adjusting the alignment of the SLD carrier 10 and an input waveguide of the 3dB coupler 3 by an active alignment method, and finally heating and curing conductive adhesive;
and step 9: processing a detector carrier 12 according to the description of the detector carrier 12, manufacturing a metal lead pattern on the front surface of the detector carrier, wherein the thickness of the metal pattern is about 0.5-1 mu m, then accurately positioning and bonding a photodiode chip 11 on the detector carrier 12 by using a precise chip mounter, ensuring that the distance between the center of a photosensitive surface and the lower edge of the detector carrier is the sum of the thickness of a 3dB coupler silicon substrate and the thickness of a SiO2 cladding, and controlling the error within +/-10 mu m;
step 10: and (2) vertically bonding a detector carrier 12 on the substrate 1 by adopting a precise adjusting frame, preferably enabling the adhesive to have good thermal conductivity, aligning the photosensitive surface of the signal detector 5 with the signal detection waveguide end surface of the 3dB coupler 3 by an active alignment method, and then heating and curing to obtain the hybrid integrated optical fiber gyroscope optical chip.
Specific embodiments are described below.
Example 1
Referring to fig. 1-3, the hybrid integrated fiber optic gyroscope optical chip 100 of the present invention includes a substrate 1, a light source 2, a 3dB coupler 3, a lithium niobate Y-branch phase modulator 4, and a signal detector 5; the light source 2, the 3dB coupler 3, the lithium niobate Y-branch phase modulator 4 and the photoelectric detector 5 are mixed and integrated on the substrate 1;
the lithium niobate Y-branch phase modulator 4 is a lithium niobate-based proton exchange type waveguide, and when the transmission wavelength is 1310nm, the width of a single-mode waveguide is usually 5.5-6 μm;
the silicon-based 3dB coupler 3 is based on a mature silicon-based silica optical waveguide manufacturing technology, generally adopts an ion-enhanced chemical vapor deposition PECVD technology to grow SiO2 lower cladding and core layer films, then forms a silicon-based 3dB coupler pattern by utilizing photoetching and inductively coupled plasma etching ICP technology, then utilizes the PECVD technology to deposit an upper cladding, and prepares a low-loss silicon-based 3dB coupler by annealing;
referring to fig. 2, the silicon-based 3dB coupler 3 includes a Y-branch waveguide 3-3, a first 90 ° arc waveguide 3-4, a second 90 ° arc waveguide 3-5, a tapered waveguide 3-1, a first straight waveguide 3-2, and a second straight waveguide 3-6, which are communicated with each other. One branch of the Y-branch waveguide 3-3 is connected with the narrow end of the tapered waveguide 3-1, the wide end of the tapered waveguide 3-1 is used as the optical input port of the optical chip, and the light source 2 is over against the optical input port; the other branch of the Y-branch waveguide 3-3 is connected with the first straight waveguide 3-2 to be used as a signal output port of the optical chip, and the photosensitive surface of the signal detector is opposite to the signal output port; the fundamental wave guide of the Y-branch waveguide 3-3 is connected with a first 90-degree arc 3-4 and a second 90-degree arc 3-5 which are reversely connected, the other end of the second 90-degree arc 3-5 is connected with one end of a second straight waveguide 3-6, and the other end face of the second straight waveguide 3-6 is used as an optical transmission port and is spliced and fixed with the end face of the fundamental wave guide 4-1 of the lithium niobate Y-branch phase modulator 4 through a waveguide coupling process; two branch ends of the lithium niobate Y-branch phase modulator 4 are respectively a first tail fiber coupling port 6 and a second tail fiber port 7, and two sides of each branch are respectively provided with a metal modulation electrode 8.
The substrate material of the silicon-based 3dB coupler 3 is silicon, the upper and lower cladding materials of the waveguide are silicon dioxide, the core layer material of the waveguide is germanium-doped silicon dioxide, and the refractive index of the core layer is adjusted by adjusting the content of Ge, so that the difference between the refractive index of the core layer and the refractive index of the cladding is preferably 0.75-1.5%; SiO 2: the Ge core layer is generally rectangular in cross-section and has a length of: 3-7 μm in width of-6.5 μm; the thickness of the SiO2 cladding is usually 10-30 μm, which is effective in preventing light from leaking out of the cladding;
in order to eliminate the back reflection existing between interfaces and simultaneously consider the light transmission refraction law, the end face of the chip is polished by adopting an end face inclination angle mode, wherein the silicon-based 3dB coupler 3 is designed into a parallelogram, the internal angle α is 75 +/-0.5 degrees, the length is 12-20 mm, the width is 7-14 mm, the thickness of a silicon substrate is 0.52-1 mm, the curvature radius of two 90-degree bending waveguides is the same and is 2.5-5 mm, the minimum bending radius of the circular arc waveguide of the silicon-based 3dB coupler is related to the difference between the refractive index of a core layer and the refractive index of a cladding layer, and under the common condition, when the refractive index difference is 0.75%, the minimum bending radius is 5mm, and when the refractive index difference is 1.5%, the minimum bending radius is 2.5 mm.
The thickness of the substrate of the lithium niobate Y-branch phase modulator 4 is 0.5-0.98 mm, the substrate is slightly thinner than a silicon substrate, the cross section of a waveguide core layer is rectangular, the length is 4-7 mu m, the width is 3-5 mu m, the lithium niobate Y-branch phase modulator 4 is a parallelogram, the internal angle β is 80 +/-0.5 degrees, the length is 1.5-2 cm, and the width is 2-3 mm.
The substrate 1 is made of silicon, AlN or other high-heat-conduction materials, is rectangular, and has the length of 35-43 mm, the width of 10-20 mm and the thickness of 0.52-1 mm.
The cross section of the wide-end waveguide core layer of the tapered waveguide 3-1 is rectangular, and the length of the wide-end waveguide core layer is as follows: 6-12 μm, 4-6.5 μm width, tapered waveguide length: 500 to 1000 μm.
Preferably, ultraviolet glue is spliced and fixed on the end face 3-6 of the straight waveguide of the silicon-based 3dB coupler 3 and the end face 4-1 of the base waveguide of the lithium niobate Y-branch modulator 4.
Compared with other light sources, the SLD has the advantages of ultra-wide spectrum, low coherence, low ripple, high power, miniaturization, easiness in integration, low cost and the like, the light source 2 is preferably a super-radiation light emitting diode, but because the thickness of a silicon-based upper cladding layer is usually 10-30 micrometers, the SLD chip 9 is usually made of an InGaAsP quantum well material, the thickness of the upper cladding layer is usually 2-3 micrometers, the flip-chip alignment method in the traditional microelectronic process is not applicable, and the thickness of the SLD chip 9 is usually only 100 micrometers, the SLD carrier 10 can be used for providing mechanical support and electrical interconnection for the SLD, meanwhile, the rough alignment of the SLD and an optical input waveguide of the silicon-based 3dB coupler 3 can be realized, in addition, the SLD carrier 10 is preferably made of AlN ceramic or silicon material with an insulating layer, which is high in thermal conductivity, good in insulating property and good in thermal expansion coefficient matching, and aims to.
The SLD carrier 10 is a parallelogram, the internal angle gamma is 6 +/-0.5 degrees, and the length is as follows: 2mm, width: 1mm, the height is the sum of the thickness of the 3dB coupler 3 silicon substrate and the thickness of the SiO2 cladding, the error is controlled within-3 mu m, and the rough alignment with the 3dB coupler 3 silicon-based optical input waveguide is realized; the SLD carrier 10 is provided with a corresponding metal pattern structure as a lead bonding pad, and meanwhile, when the SLD2 and the tapered waveguide 3-1 of the 3dB coupler 3 are subjected to high-precision active alignment coupling, at least one end of the SLD chip 9 can be electrically connected.
The signal detector 4 is composed of a photodiode chip 11 and a detector carrier 12, wherein the photodiode chip 11 is a surface incidence type InGaAs photodiode, and is arranged on the detector carrier 12, the photodiode chip can be vertically arranged by vertically arranging the carrier, so that the photosensitive surface of the photodiode chip 11 is opposite to a 3-2 port of a first straight waveguide of a 3dB coupler, a metal pattern structure is manufactured on the detector carrier and is used for lead interconnection between the photodiode chip and a preamplifier, the detector carrier 12 simultaneously provides functions of mechanical support, electrical interconnection, operation convenience and the like, and in consideration of heat dissipation and electricity, the detector carrier is preferably made of AlN ceramic materials with high heat conductivity, good insulativity and good thermal expansion coefficient matching.
The preparation method of the hybrid integrated fiber-optic gyroscope optical chip 100 comprises the following steps:
step 1: cutting a substrate 1, a substrate of a lithium niobate Y-branch phase modulator 4 and a silicon substrate of a 3dB coupler 3 according to the chip size design;
step 2: depositing a SiO2 film on a silicon substrate as a buffer layer by combining a PECVD method and ICP etching; growing a germanium-doped SiO2 film on the SiO2 film, wherein the thickness of the germanium-doped SiO2 film is the thickness of the waveguide core layer; photoetching and etching processes are carried out on the components of SiO 2: forming a core layer waveguide pattern on the Ge film; depositing a SiO2 film on the surface of the substrate, and annealing to obtain a 3dB coupler 3;
and step 3: according to the graphic design of the lithium niobate Y-branch phase modulator 4, a Y-branch waveguide is manufactured on a lithium niobate substrate by adopting photoetching, proton exchange and annealing processes; then, manufacturing modulation electrodes 8 on two sides of each branch of the Y-branch waveguide by adopting a photoetching process;
and 4, step 4: polishing and grinding the waveguide input and output ports of the silicon-based 3dB coupler 3 and the lithium niobate Y waveguide modulator 4; metallizing the other two sides of the Y waveguide modulator to eliminate the influence of pyroelectric and stray light;
and 5: fixing a silicon-based 3dB coupler straight waveguide end 3-6 and a straight waveguide end 4-1 of a lithium niobate Y waveguide modulator through an active alignment waveguide coupling process, and bonding and fixing by ultraviolet glue, wherein the active alignment process comprises the following steps: light enters a base waveguide of the lithium niobate Y waveguide modulator from a straight waveguide end 3-6 of the 3dB coupler, transmitted light is received by a light receiving element, and the straight waveguide 3-6 of the 3dB coupler is aligned with a straight waveguide 4-1 of the lithium niobate Y waveguide modulator in the X direction and the Y direction, so that light intensity output is maximized;
step 6: adhering the spliced silicon-based 3dB coupler 3 and the lithium niobate Y waveguide modulator 4 on the substrate 1 by using a chip mounter, and preferably selecting ultraviolet glue as an adhesive;
and 7: processing the SLD carrier 10 according to the pattern design of the SLD carrier 10, then manufacturing a metal lead pattern on the front surface of the SLD carrier 10, wherein the thickness of the metal pattern is 0.5-1 mu m, and bonding the back surface of the SLD carrier 10 on a light source area on a substrate 1 by adopting a chip mounter;
and 8: adopting a mechanical arm of a precise adjusting frame to reversely buckle the SLD chip 9 on the SLD carrier 10, preferably selecting conductive silver paste as an adhesive, wherein the thickness is 1-3 mu m, realizing electric coupling and coarse alignment, then combining a probe table to electrify a lead area of the SLD carrier 10 to enable the SLD to work, finely adjusting the alignment of the SLD and an input waveguide of a 3dB coupler by an active alignment method, and finally heating and curing the conductive adhesive;
and step 9: processing a detector carrier 12 according to the design of the detector carrier 12, manufacturing a metal lead pattern on the front surface of the detector carrier, wherein the thickness of the metal pattern is about 0.5-1 mu m, accurately positioning and bonding a photodiode chip 11 on the detector carrier 12 by adopting a precise chip mounter, ensuring that the distance between the center of a photosensitive surface and the lower edge of the detector carrier is the sum of the thickness of a 3dB coupler silicon substrate and the thickness of a SiO2 cladding, and controlling the error within +/-10 mu m;
step 10: and (2) vertically bonding a detector carrier 12 on the substrate 1 by adopting a precise adjusting frame, preferably enabling the adhesive to have good thermal conductivity, aligning the photosensitive surface of the signal detector 5 with the signal detection waveguide end surface of the 3dB coupler 3 by an active alignment method, and then heating and curing to obtain the hybrid integrated optical fiber gyroscope optical chip.
Referring to fig. 4, in the silica-based-LN hybrid integrated optical chip 100 fiber-optic gyroscope system 200 of the present invention, light emitted from the light source 2 enters the silica-based chip 3dB coupler 3 from the light input end 3-1, enters the lithium niobate Y waveguide modulator 4 through the Y branch, the two first 90 ° arcs 3-4, the first 90 ° arcs 3-5, and the second straight waveguides 3-6 that are connected in opposite directions, the light wave entering the LN Y waveguide modulator 4 enters the optical fiber ring 13 from the first pigtail coupling port 4-2 and the second pigtail port 4-3, respectively, and propagates in opposite directions, and the returned light wave reaches the signal detector 5 from the first straight waveguide 3-2 of the silica-based 3dB coupler 3.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (5)
1. A method for preparing a hybrid integrated optical fiber gyroscope optical chip is characterized in that,
the hybrid integrated fiber optic gyroscope optical chip (100) prepared by the preparation method comprises: the device comprises a substrate (1), a light source (2), a silicon-based 3dB coupler (3), a lithium niobate Y-branch phase modulator (4) and a signal detector (5);
the light source (2), the silicon-based 3dB coupler (3), the lithium niobate Y-branch phase modulator (4) and the signal detector (5) are mixed and integrated on the substrate (1);
the lithium niobate Y-branch phase modulator (4) is a lithium niobate-based proton exchange type waveguide;
the silicon-based 3dB coupler (3) is based on a silicon-based silica optical waveguide manufacturing technology, a substrate material is silicon, a waveguide cladding material is silica, and a waveguide core layer material is germanium-doped silica;
the silicon-based 3dB coupler (3) comprises a Y-branch waveguide (3-3), a first 90-degree arc waveguide (3-4), a second 90-degree arc waveguide (3-5), a tapered waveguide (3-1), a first straight waveguide (3-2) and a second straight waveguide (3-6) which are communicated with each other, one branch of the Y-branch waveguide (3-3) is connected with the narrow end of the tapered waveguide (3-1), the wide end of the tapered waveguide (3-1) is used as an optical input port of an optical chip, the light source (2) is right opposite to the optical input port, the other branch of the Y-branch waveguide (3-3) is connected with the first straight waveguide (3-2) to be used as a signal output port of the optical chip, and the photosensitive surface of the signal detector (5) is right opposite to the signal output port; the fundamental wave guide of the Y-branch waveguide (3-3) is connected with a first 90-degree arc waveguide (3-4) and a second 90-degree arc waveguide (3-5) which are connected in reverse, the other end of the second 90-degree arc waveguide (3-5) is connected with one end of a second straight waveguide (3-6), and the other end face of the second straight waveguide (3-6) is used as an optical transmission port and is spliced and fixed with the end face of the fundamental wave guide of the lithium niobate Y-branch phase modulator (4) through a waveguide coupling process; two branch ends of the lithium niobate Y-branch phase modulator (4) are respectively a first tail fiber coupling port (6) and a second tail fiber port (7), and two sides of each branch are respectively provided with a metal modulation electrode (8);
in the silicon-based 3dB coupler (3), the refractive index of a core layer is greater than that of a cladding layer;
the silicon-based 3dB coupler (3) chip is a parallelogram, the inner angle α is 75 +/-0.5 degrees, the length is 12-20 mm, the width is 7-14 mm, the thickness of a silicon substrate is 0.52-1 mm, the thickness of a SiO2 cladding is 10-30 mu m, the cross section of a Ge core layer is rectangular, the length is 3-7 mu m, and the width is 3-6.5 mu m;
the substrate thickness of the lithium niobate Y-branch phase modulator (4) is 0.5-0.98 mm, the lithium niobate Y-branch phase modulator is slightly thinner than a silicon substrate, the cross section of a waveguide core layer is rectangular, the length is 4-7 mu m, the width is 3-5 mu m, the lithium niobate Y-branch phase modulator (4) is a parallelogram, the inner angle β is 80 +/-0.5 degrees, the length is 1.5-2 cm, and the width is 2-3 mm;
the substrate (1) is made of silicon, AlN or other high-heat-conductivity materials, is rectangular, and has the length of 35-43 mm, the width of 10-20 mm and the thickness of 0.52-1 mm;
the curvature radius of the first 90-degree arc waveguide (3-4) and the curvature radius of the second 90-degree arc waveguide (3-5) are the same and are 2.5-5 mm;
the cross section of a wide-end waveguide core layer of the tapered waveguide (3-1) is rectangular, and the length of the wide-end waveguide core layer is as follows: 6-12 μm, 4-6.5 μm width, tapered waveguide length: 500 to 1000 μm;
the end face of a second straight waveguide (3-6) of the silicon-based 3dB coupler (3) and the end face of a fundamental wave guide of the lithium niobate Y-branch phase modulator (4) are spliced and fixed by selecting ultraviolet glue;
the light source (2) is composed of a super-radiation light-emitting diode (SLD) chip (9) and an SLD carrier (10), wherein the super-radiation light-emitting diode (SLD) chip (9) is reversely buckled on the SLD carrier (10), and the SLD carrier (10) provides mechanical support and electrical interconnection for the super-radiation light-emitting diode (SLD) chip (9);
the SLD carrier (10) is a parallelogram, the internal angle gamma is 6 +/-0.3 degrees, and the length is as follows: 2mm, width: 1 mm: the height is the sum of the thickness of the silicon substrate of the silicon-based 3dB coupler (3) and the thickness of the SiO2 cladding, and the error is controlled within-3 mu m; a corresponding metal pattern structure is manufactured on the SLD carrier (10) and used as a lead bonding pad, and meanwhile, when the super-radiation light-emitting diode (SLD) chip (9) and the silicon-based 3dB coupler tapered waveguide (3-1) are subjected to active alignment coupling, one end of the super-radiation light-emitting diode (SLD) chip (9) can be electrically connected;
the signal detector (5) consists of a photodiode chip (11) and a detector carrier (12), wherein the photodiode chip (11) is a surface incidence type InGaAs photodiode and is arranged on the detector carrier (12), the photodiode chip (11) can be vertically arranged by vertically arranging the detector carrier (12), the photosensitive surface of the photodiode chip (11) is opposite to the port of the first straight waveguide (3-2) of the silicon-based 3dB coupler, and the detector carrier (12) simultaneously provides mechanical support, electrical interconnection and operation convenience;
specifically, the preparation method comprises the following steps:
step 1: designing and cutting a substrate (1), a substrate of the lithium niobate Y-branch phase modulator (4) and a silicon substrate of the silicon-based 3dB coupler (3) according to the size of the chip;
step 2: depositing a SiO2 film on a silicon substrate as a buffer layer by combining a PECVD method and ICP etching; growing a germanium-doped SiO2 film on the SiO2 film, wherein the thickness of the germanium-doped SiO2 film is the thickness of the waveguide core layer; photoetching and etching processes are carried out on the components of SiO 2: forming a core layer waveguide pattern on the Ge film; depositing a layer of SiO2 film on the silicon substrate, and annealing to obtain a silicon-based 3dB coupler;
and step 3: manufacturing a Y-branch waveguide on the lithium niobate substrate by adopting photoetching, proton exchange and annealing processes according to the graphic design of the lithium niobate Y-branch phase modulator (4); then, manufacturing modulation electrodes (8) on two sides of each branch of the Y-branch waveguide by adopting a photoetching process;
and 4, step 4: polishing and grinding the waveguide input and output ports of the silicon-based 3dB coupler (3) and the lithium niobate Y-branch phase modulator (4); the other two sides of the lithium niobate Y-branch phase modulator (4) are metalized, so that the influence of pyroelectric and stray light is eliminated;
and 5: fixing a second direct waveguide end (3-6) of the silicon-based 3dB coupler (3) and a direct waveguide end (4-1) of the lithium niobate Y-branch phase modulator (4) through a waveguide coupling process;
step 6: adhering the spliced silicon-based 3dB coupler (3) and the lithium niobate Y-branch phase modulator (4) on a substrate by using a chip mounter;
and 7: processing the SLD carrier (10) according to the pattern design of the SLD carrier (10), then manufacturing a metal lead pattern on the front surface of the SLD carrier (10), wherein the thickness of the metal pattern is 0.5-1 mu m, and bonding the back surface of the SLD carrier (10) on a light source area on a substrate by adopting a chip mounter;
and 8: adopting a mechanical arm of a precise adjusting frame to reversely buckle the SLD chip (9) of the super-radiation light-emitting diode on an SLD carrier (10) to realize electric coupling and coarse alignment, then combining a probe table to electrify a lead area of the SLD carrier (10) to enable the SLD to work, finely adjusting the alignment of the SLD carrier (10) and an input waveguide of a silicon-based 3dB coupler (3) by an active alignment method, and finally heating and curing conductive adhesive;
and step 9: processing the detector carrier (12) according to the description of the detector carrier (12), manufacturing a metal lead pattern on the front surface of the detector carrier (12), wherein the thickness of the metal pattern is 0.5-1 mu m, and then accurately positioning and bonding the photodiode chip (11) on the detector carrier (12) by adopting a precise chip mounter to ensure that the distance from the center of the photosensitive surface to the lower edge of the detector carrier (12) is the sum of the thickness of the silicon substrate of the silicon-based 3dB coupler (3) and the thickness of the SiO2 cladding;
step 10: a detector carrier (12) is vertically bonded on a substrate (1) by adopting a precise adjusting frame, a photosensitive surface of a signal detector (5) is aligned with the signal detection waveguide end surface of a silicon-based 3dB coupler (3) by an active alignment method, and then heating and curing are carried out to prepare the hybrid integrated optical fiber gyroscope optical chip.
2. The method for preparing a hybrid integrated fiber optic gyroscope optical chip according to claim 1, wherein in step 5, ultraviolet glue is used for fixing.
3. The method for preparing the hybrid integrated fiber optic gyroscope optical chip according to claim 1, wherein conductive silver paste with good thermal conductivity and good electrical conductivity is used as the adhesive in the step 6.
4. The method for preparing the hybrid integrated fiber-optic gyroscope optical chip as claimed in claim 1, wherein in the step 8, the mechanical arm of the fine adjustment frame is used for reversely buckling the SLD chip (9) of the superluminescent diode on the SLD carrier (10), and conductive silver paste is used as an adhesive.
5. The method for preparing the optical chip of the hybrid integrated fiber-optic gyroscope according to claim 1, wherein the step 9 ensures that the distance between the center of the photosensitive surface and the lower edge of the detector carrier (12) is the sum of the thickness of the silicon substrate of the silicon-based 3dB coupler (3) and the thickness of the SiO2 cladding, and the error is controlled within +/-10 μm.
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