CN1085612A - Cesium triborate single crystal growth method and nonlinear optical device made by it - Google Patents
Cesium triborate single crystal growth method and nonlinear optical device made by it Download PDFInfo
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- CN1085612A CN1085612A CN 92112293 CN92112293A CN1085612A CN 1085612 A CN1085612 A CN 1085612A CN 92112293 CN92112293 CN 92112293 CN 92112293 A CN92112293 A CN 92112293A CN 1085612 A CN1085612 A CN 1085612A
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- csb
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- nonlinear optical
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Abstract
The invention relates to a method for extracting Cs from a sample containing Cs2O and B2O3CsB growth in melt by pulling technique3O5Method for single-crystal growth, and CsB3O5A nonlinear optical device made of single crystal. CsB grown by the method3O5Single crystals, which can be used to make nonlinear optical devices; the nonlinear optical device has high conversion efficiency, excellent light damage resistance and can generate ultraviolet light with wavelength of 1700 AAAnd (6) discharging.
Description
The present invention relates to a kind of compound monocrystal cesium triborate (CsB
3O
5) growth method and use CsB
3O
5The device for non-linear optical that single crystal is made.
When in laser has the crystal of non-zero secondary polarizability, propagating, can produce non-linear optical effects such as frequency multiplication and frequency, difference frequency, parameter amplification.Utilize the crystalline non-linear optical effect, can make second harmonic generator, device for non-linear optical such as upper and lower frequency converter, optical parametric oscillator.
The ideal non-linear optic crystal should possess following condition: non-linear susceptibility is big, the optical transmittance wide waveband, and the phase matched performance is good, the light injury threshold height.
The BBO(low-temperature phase barium metaborate, β-BaB
2O
4) and LBO(three lithium tetraborates, LiB
3O
5) be the outstanding non-linear optic crystal of finding in recent years, they especially (see " Chinese science " B28,235 tolerating in the powerful device for non-linear optical to be used widely in device for non-linear optical, 1985 and " Chinese invention patent ", application number 88102084).
But the too little (d of Clock Multiplier Factor z component of BBO
31<0.07d
11), this has limited its application at the uv-absorbing wave band, its acceptance angle little (less than 1mrad-om) in addition, thereby very high to the requirement of crystal working accuracy; And effective Clock Multiplier Factor of LBO big not enough (be about BBO 3/5), this is restricted the efficiency of conversion of LBO.
Acta Crystallography magazine (Vol.13,889,1960 of Denmark; Vol.B30,1178,1974) reported CsB
3O
5Crystalline structure.This crystal belongs to P2
12
12
1Spacer is a biaxial crystal.According to above-mentioned magazine report, prepared CsB
3O
5Crystallite dimension only is 0.10 * 0.17 * 0.46mm
3The Physics and Chemistry of Glasses magazine (Vol.16,108,1975) of Britain has been reported with hot-stage microscope and has been studied CsB
3O
5Cross the kinetics of crystallization process in the sloppy heat body, the photo of being announced shows that what obtain is the polycrystal that several crystallites are polymerized.So far not seeing relevant preparation size as yet is enough to the report of the cesium triborate monocrystalline used for physical property measurement, also not about the test of cesium triborate monocrystalline non-linear optical property or the cesium triborate monocrystalline is used to make the report of device for non-linear optical.
The purpose of this invention is to provide a kind of growth method of cesium triborate monocrystalline and device for non-linear optical of making of the cesium triborate monocrystalline of preparing.
The present invention prepares CsB
3O
5The method of monocrystalline is the method for adopting czochralski technique growing crystal from melt.
To contain Cs
2O and B
2O
3Mol ratio is after 1: 3 raw materials of compound mixes, to be heated to fusing in platinum crucible, and is being higher than CsB
3O
5Melting temperature insulation for some time; Drop to the temperature of a little higher than fusing point, seed crystal is fixed on the seed rod with platinum filament, seed crystal makes seed crystal contact with bath surface under the top; With less than 45 rev/mins rotating speed rotation seed crystal, and, treat CsB with 0~5 millimeter/hour the speed pulling crystal that makes progress
3O
5Single crystal growing strengthens pull rate behind the required yardstick, makes crystal break away from melt liquid level, is annealed to room temperature with the speed that is not more than 100 ℃/hour.Described raw materials of compound can be Cs
2CO
3With H
3BO
3Or B
2O
3, also can be CsNO
3With H
3BO
3Or B
2O
3, can also be CsCl and H
3BO
3Or B
2O
3Utilize following any one reaction can obtain CsB
2O
5Melt:
Adopt aforesaid method can obtain to be of a size of the transparent CsB of centimetre-sized
3O
5Monocrystalline.
The present inventor finds after tested, CsB
3O
5Crystal has following nonlinear optical properties:
1. the transmission region of non-constant width: ultraviolet absorption edge is 170nm, and the infrared permeation wave band extends to 3000nm.
2. the Sellmeire equation that draws by least square fitting:
3. effectively Clock Multiplier Factor is big, greater than LBO, with BBO about equally.
4. Clock Multiplier Factor z component is big.
5. the light injury threshold height is 20-28GW/cm
2(1ns, λ=1053nm).Be not less than BBO.
6. under the room temperature, in its whole transmission region scope, all can realize phase matched.Adopt the YAG laser apparatus, first-harmonic λ=1064nm, frequency multiplication ripple λ=532nm, phase matching angle θ=59.4 °, φ=0 ° (I class); θ=15.6 °, φ=0 ° (II class).
7. acceptance angle is greater than BBO.
8. walk-off angle is 1.76 ° (I classes), and 1.12 ° (II class) is less than BBO.
Therefore, chemical formula is CsB
2O
5Compound crystal be a kind of new non-linear optic crystal.Adopt the CsB of the inventive method growth
3O
5The device for non-linear optical that single crystal is made has the existing following advantage that adopts the device for non-linear optical that bbo crystal or lbo crystal make simultaneously: the efficiency of conversion height, beam divergence is required low, photodamage resistant superior performance, and can produce wavelength and be as short as 1700
UV-light output.
Accompanying drawing 1 is typical CsB of the present invention
3O
5The fundamental diagram of the device for non-linear optical that single crystal is made.Inject CsB by the light beam (2) that laser apparatus (1) sends
2O
5Crystal (3), the outgoing beam that is produced (4) passes through filter plate (5), thereby obtains needed laser beam.Be of the present invention with CsB
3O
5The device for non-linear optical that single crystal is made comprises a branch of at least incidence electromagnetic radiation by a CsB
3O
5Behind the monocrystalline, produce the device that a branch of at least frequency is different from the output radiation of incidence electromagnetic radiation.This device can be a second harmonic generator, upper and lower frequency converter, and optical parametric oscillator etc., the wavelength region of described incidence electromagnetic radiation is 0.34~3.0 μ m.
For second harmonic generator, (2) are fundamental waves, and outgoing beam (4) contains the composition of first-harmonic and frequency multiplication ripple, and the effect of spectral filter (5) is an elimination fundamental wave composition, only allows frequency doubled light to pass through.
CsB
3O
5The modes of emplacement of single crystal (3) is such: make light beam incident direction and crystal optics axle z(be equivalent to crystallographic axis b) and the axle x(be equivalent to crystallographic axis c) angle be respectively θ, φ, described θ, φ are CsB
3O
5The crystalline phase matching angle, about the problem of phase matching angle in the biaxial crystal, Hobden had done to go through (J.Appl.Phys., Vol.38,4365,1967).
Below be to adopt the inventive method growth CsB
3O
5The embodiment of monocrystalline:
Embodiment 1:
With 79.2gCs
2CO
3And 89.6gN
3BO
3Behind the uniform mixing, pack in the opening platinum crucible of φ 50mm * 40mm, crucible is put into monocrystal growing furnace, with lagging material the opening that is positioned at furnace roof portion is sealed up, stay an aperture that can supply seed rod to come in and go out in furnace roof portion and corresponding position, crucible central position, be rapidly heated to 1000 ℃, constant temperature fast cooling to 838 ℃ after 10 hours will be along the CsB of C axle cutting
3O
5Seed crystal is fixed on the seed rod lower end with platinum filament, from furnace roof portion aperture seed crystal is imported crucible, make it to contact with melt liquid level, 20 rev/mins of seed rod speed of rotation, pull rate is 0.5 millimeter/hour, accelerate pull rate when finishing growth and make crystal break away from bath surface, be cooled to room temperature, obtain to be of a size of the transparent CsB of φ=20mm * 20mm with 60 ℃/hour speed annealing
3O
5Monocrystalline.
Embodiment 2:
With 118.2gCs
2CO
3And 133.8gH
3BO
3Behind the uniform mixing, pack in the opening platinum crucible of φ 50mm * 55mm, crucible is put into the vertical process furnace, with lagging material the opening that is positioned at furnace roof portion is sealed up, stay one can be rapidly heated to 950 ℃ for the aperture of seed rod discrepancy in furnace roof portion and corresponding position, crucible central position, constant temperature is after 12 hours, fast cooling to 837 ℃ will be along the CsB of C axle cutting
3O
5Seed crystal is fixed on the seed rod lower end with platinum filament, from furnace roof portion aperture seed crystal is imported crucible, make it to contact with melt liquid level, 30 rev/mins of seed rod speed of rotation, with 0.2 ℃/day speed cooling, crystal growth finishes after 14 days, and crystal is lifted from liquid level, speed annealing with 50 ℃/hour is cooled to room temperature, and the acquisition size is 21 * 25 * 20mm
3Transparent CsB
3O
5Monocrystalline.
Embodiment 3:
With 88.2gCsNO
3And 84.0gH
3BO
3Behind the uniform mixing, pack in the opening platinum crucible of φ 45mm * 50mm, crucible is put into the vertical process furnace, with lagging material fire door is sealed up, stay an aperture at the furnace roof place corresponding with the crucible central position, 900 ℃ of constant temperature are cooled to 837 ℃ after 12 hours, by the top aperture, with seed rod seed crystal is imported crucible, make it to contact with liquid level, with 0.1 ℃/day speed cooling, and rotary seed crystal rod, 20 rev/mins of rotating speeds, sense of rotation with 1 minute be the cycle by clockwise with counterclockwise hocket, crystal growth finishes after 20 days, and crystal is lifted from liquid level, speed annealing with 60 ℃/hour is cooled to room temperature, obtains to be of a size of 27 * 17 * 14mm
3Transparent CsB
3O
5Monocrystalline.
Embodiment 4:
CsB with embodiment 1 acquisition
3O
5Monocrystalline is pressed crystallographic axis a, b, c orientation, and according to θ=59.4 °, the orientation of φ=0 ° cuts out 6 * a 6 * 6mm
3Crystal, press accompanying drawing 1 shown device on the position of non-linear optic crystal 3.At room temperature, with transferring Q YAG laser apparatus as light source, input optical wavelength is 1064nm, obtains the frequency multiplication output light of λ=532nm.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92112293 CN1085612A (en) | 1992-10-10 | 1992-10-10 | Cesium triborate single crystal growth method and nonlinear optical device made by it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92112293 CN1085612A (en) | 1992-10-10 | 1992-10-10 | Cesium triborate single crystal growth method and nonlinear optical device made by it |
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| Publication Number | Publication Date |
|---|---|
| CN1085612A true CN1085612A (en) | 1994-04-20 |
Family
ID=4945868
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92112293 Pending CN1085612A (en) | 1992-10-10 | 1992-10-10 | Cesium triborate single crystal growth method and nonlinear optical device made by it |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332075C (en) * | 2004-06-25 | 2007-08-15 | 中国科学院理化技术研究所 | Cesium rubidium borate nonlinear optical crystal and growing method and application thereof |
| CN100362144C (en) * | 2003-02-13 | 2008-01-16 | 独立行政法人科学技术振兴机构 | Method for producing borate crystal and laser oscillator |
| RU2367729C1 (en) * | 2008-03-13 | 2009-09-20 | Закрытое акционерное общество "ЭльСиЭс Фасилити Менеджмент" | Method for preparation of ideal cesium triborate crystals from multicomponent solutions-melts |
| CN102108550A (en) * | 2010-11-22 | 2011-06-29 | 福建福晶科技股份有限公司 | Method for preventing severe volatilization during growth process of cesium triborate |
| CN106637407A (en) * | 2017-01-06 | 2017-05-10 | 福建福晶科技股份有限公司 | Method for preventing melt from falling in growth process of CBO crystals |
-
1992
- 1992-10-10 CN CN 92112293 patent/CN1085612A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362144C (en) * | 2003-02-13 | 2008-01-16 | 独立行政法人科学技术振兴机构 | Method for producing borate crystal and laser oscillator |
| CN1332075C (en) * | 2004-06-25 | 2007-08-15 | 中国科学院理化技术研究所 | Cesium rubidium borate nonlinear optical crystal and growing method and application thereof |
| RU2367729C1 (en) * | 2008-03-13 | 2009-09-20 | Закрытое акционерное общество "ЭльСиЭс Фасилити Менеджмент" | Method for preparation of ideal cesium triborate crystals from multicomponent solutions-melts |
| CN102108550A (en) * | 2010-11-22 | 2011-06-29 | 福建福晶科技股份有限公司 | Method for preventing severe volatilization during growth process of cesium triborate |
| CN106637407A (en) * | 2017-01-06 | 2017-05-10 | 福建福晶科技股份有限公司 | Method for preventing melt from falling in growth process of CBO crystals |
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