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CN108074856A - Single substrate processing apparatus - Google Patents

Single substrate processing apparatus Download PDF

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Publication number
CN108074856A
CN108074856A CN201711068508.5A CN201711068508A CN108074856A CN 108074856 A CN108074856 A CN 108074856A CN 201711068508 A CN201711068508 A CN 201711068508A CN 108074856 A CN108074856 A CN 108074856A
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substrate
air pressure
buffer
movable
processing apparatus
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CN108074856B (en
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冯傳彰
吴庭宇
蔡文平
刘茂林
李威震
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Scientech Corp
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Scientech Corp
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    • H10P72/7624
    • H10P72/0402
    • H10P72/0408
    • H10P72/0411
    • H10P72/0414
    • H10P72/0416
    • H10P72/0422
    • H10P72/0451
    • H10P72/7616
    • H10P72/78

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  • Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Level Indicators Using A Float (AREA)
  • Weting (AREA)

Abstract

The invention discloses a single substrate processing device, which comprises a base and a substrate carrying platform. The substrate carrier comprises a fixed shaft, a bearing part and a buffer structure. The fixed shaft is connected to the base, and an air pressure channel is formed in the fixed shaft. The bearing part is connected with the fixed shaft and bears the substrate. The bearing part is provided with at least one through hole which is communicated with the air pressure channel. The buffer structure is arranged on the bearing part, one surface of the buffer structure corresponds to the through hole, and the other surface of the buffer structure corresponds to the substrate.

Description

单基板处理装置Single substrate processing device

技术领域technical field

本发明是关于一种单基板处理装置,特别是关于一种单基板处理装置的基板载台。The present invention relates to a single substrate processing device, in particular to a substrate carrier of the single substrate processing device.

背景技术Background technique

在基板处理技术中,藉由载台吸附住基板的中心,以固定并带动基板旋转,藉此进行基板的湿式处理工艺。然而,基板在经过多道工艺加工后,会累积许多应力或有细微裂痕。因此,故当基板传送至载台时,极有可能因基板与载台接触力或产生碰撞,或者在启动吸引力后,造成基板因为应力或裂痕而产生破损。In the substrate processing technology, the center of the substrate is adsorbed by the stage to fix and drive the substrate to rotate, thereby performing the wet processing process of the substrate. However, after the substrate is processed through multiple processes, it will accumulate a lot of stress or have fine cracks. Therefore, when the substrate is transferred to the stage, it is very likely that the substrate will be damaged due to stress or cracks due to contact force or collision between the substrate and the stage, or after the suction force is activated.

目前虽有在载台上加装软性的凸块,欲避免基板与硬质的载台直接接触,然而其效果并不佳。并且,在启动吸引力时,基板受到吸引仍会挤压软性的凸块,而软性的凸块过度压缩后,所能产生的缓冲效果有限,故无法提供适当的缓冲,因此现有技术确有改进的必要。At present, although soft bumps are installed on the stage to avoid direct contact between the substrate and the hard stage, the effect is not good. Moreover, when the attraction force is activated, the substrate will still squeeze the soft bump when it is attracted, and after the soft bump is over-compressed, the cushioning effect that can be produced is limited, so it cannot provide proper cushioning. Therefore, the prior art There is indeed a need for improvement.

发明内容Contents of the invention

有鉴于上述课题,本发明提供一种单基板处理装置,其包括底座及基板载台,基板载台包括固定轴、承载部及缓冲结构,固定轴连接于底座,并具有气压通道,承载部具有与气压通道相互连通的通孔,而缓冲结构设置于承载部,且缓冲结构的一表面对应于通孔,另一表面对应于基板,以解决现有载台无法提供适当的缓冲效果的问题。In view of the above problems, the present invention provides a single substrate processing device, which includes a base and a substrate carrier, the substrate carrier includes a fixed shaft, a bearing part and a buffer structure, the fixed shaft is connected to the base, and has an air pressure channel, and the carrier part has A through hole communicating with the air pressure channel, and a buffer structure is arranged on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate, so as to solve the problem that the existing carrier cannot provide a proper buffer effect.

本发明提供一种单基板处理装置,用于对一基板进行湿式处理。单基板处理装置包括一底座、一基板载台以及一收集单元。基板载台包括一固定轴、一承载部及一缓冲结构。固定轴连接于底座,固定轴的内部具有一气压通道。承载部连接于固定轴,并承载基板。承载部具有至少一通孔,通孔与气压通道相互连通。缓冲结构设置于承载部,且缓冲结构的一表面对应于通孔,另一表面对应于基板。收集单元设置于基板载台的外侧,收集基板经湿式处理的一处理液。The invention provides a single substrate processing device, which is used for wet processing a substrate. The single substrate processing device includes a base, a substrate carrier and a collecting unit. The substrate carrier includes a fixed shaft, a bearing part and a buffer structure. The fixed shaft is connected to the base, and there is an air pressure channel inside the fixed shaft. The carrying part is connected to the fixed shaft and carries the substrate. The bearing part has at least one through hole, and the through hole communicates with the air pressure channel. The buffer structure is disposed on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate. The collection unit is arranged on the outside of the substrate platform, and collects a processing liquid obtained by wet processing of the substrate.

本发明另提供一种单基板处理装置,用于对一基板进行校准。单基板处理装置包括一底座、一基板载台以及一校准单元。基板载台包括一固定轴、一承载部及一缓冲结构。固定轴连接于底座,固定轴的内部具有一气压通道。承载部连接固定轴,并承载基板,承载部具有至少一通孔,通孔与气压通道相互连通。缓冲结构设置于承载部,且缓冲结构的一表面对应于通孔,另一表面对应于基板。校准单元,控制基板载台旋转基板,并对基板进行校准。The invention further provides a single substrate processing device for calibrating a substrate. The single substrate processing device includes a base, a substrate carrier and a calibration unit. The substrate carrier includes a fixed shaft, a bearing part and a buffer structure. The fixed shaft is connected to the base, and there is an air pressure channel inside the fixed shaft. The bearing part is connected with the fixed shaft and carries the substrate. The bearing part has at least one through hole, and the through hole communicates with the air pressure channel. The buffer structure is disposed on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate. The calibration unit controls the substrate carrier to rotate the substrate and calibrates the substrate.

根据本发明的一实施例,缓冲结构包括至少一可动式缓冲部,可动式缓冲部覆盖于通孔,基板载台更包括一控制单元,其控制可动式缓冲部于一第一高度及一第二高度之间移动。According to an embodiment of the present invention, the buffer structure includes at least one movable buffer part, the movable buffer part covers the through hole, and the substrate carrier further includes a control unit, which controls the movable buffer part to a first height and a second height.

根据本发明的一实施例,当控制单元控制可动式缓冲部上升至第一高度,可动式缓冲部接触基板,当控制单元控制可动式缓冲部下降至第二高度,可动式缓冲部与基板形成一负压区域,可动式缓冲部吸附基板。According to an embodiment of the present invention, when the control unit controls the movable buffer part to rise to the first height, the movable buffer part contacts the substrate; when the control unit controls the movable buffer part to descend to the second height, the movable buffer part The part and the substrate form a negative pressure area, and the movable buffer part absorbs the substrate.

根据本发明的一实施例,缓冲结构更包括至少一固定式缓冲部,当控制单元控制可动式缓冲部下降至第二高度,可动式缓冲部与基板形成负压区域,固定式缓冲部接触基板。According to an embodiment of the present invention, the buffer structure further includes at least one fixed buffer part. When the control unit controls the movable buffer part to drop to the second height, the movable buffer part and the substrate form a negative pressure area, and the fixed buffer part contact with the substrate.

根据本发明的一实施例,控制单元为一气压控制单元,其控制气压信道于一负压状态及一非负压状态之间转换,以控制可动式缓冲部于第一高度与第二高度之间移动。According to an embodiment of the present invention, the control unit is an air pressure control unit, which controls the air pressure channel to switch between a negative pressure state and a non-negative pressure state, so as to control the movable buffer part at the first height and the second height to move between.

根据本发明的一实施例,当气压控制单元控制气压信道转换至负压状态,可动式缓冲部下降至第二高度,固定轴与可动式缓冲部共同吸附基板。According to an embodiment of the present invention, when the air pressure control unit controls the air pressure channel to switch to a negative pressure state, the movable buffer part descends to the second height, and the fixed shaft and the movable buffer part jointly absorb the substrate.

根据本发明的一实施例,固定轴设置于基板载台的中央区域,且气压信道的一开口位于承载部的中央区域,可动式缓冲部设置于开口的外围,当气压控制单元控制气压信道转换至负压状态,可动式缓冲部下降至第二高度,气压通道的开口与可动式缓冲部共同吸附基板。According to an embodiment of the present invention, the fixed shaft is arranged in the central area of the substrate carrier, and an opening of the air pressure channel is located in the central area of the carrying part, and the movable buffer part is arranged on the periphery of the opening. When the air pressure control unit controls the air pressure channel Switching to the negative pressure state, the movable buffer part is lowered to the second height, and the opening of the air pressure channel and the movable buffer part jointly absorb the substrate.

根据本发明的一实施例,可动式缓冲部为一环型结构,环绕设置于气压通道的开口的外围。According to an embodiment of the present invention, the movable buffer part is a ring structure, which is arranged around the periphery of the opening of the air pressure channel.

根据本发明的一实施例,基板载台更包括一外环缓冲结构,设置于基板载台的一外侧壁,且外环缓冲结构的一顶缘接触基板。According to an embodiment of the present invention, the substrate carrier further includes an outer ring buffer structure disposed on an outer wall of the substrate carrier, and a top edge of the outer ring buffer structure contacts the substrate.

根据本发明的一实施例,单基板处理装置更包括一流体清洗单元,设置于底座,且环绕设置于基板载台的外围。According to an embodiment of the present invention, the single substrate processing apparatus further includes a fluid cleaning unit disposed on the base and surrounding the periphery of the substrate carrier.

根据本发明的一实施例,单基板处理装置更包括一流体加速单元,可旋转式设置于底座,且环绕设置于流体清洗单元的外围。According to an embodiment of the present invention, the single substrate processing apparatus further includes a fluid acceleration unit, which is rotatably disposed on the base and is disposed around the periphery of the fluid cleaning unit.

承上所述,依据本发明的单基板处理装置,不论是用于对基板进行湿式处理(第一实施例)或是进行校准(第二实施例),其皆包括底座及基板载台。其中,基板载台包括固定轴、承载部及缓冲结构,固定轴连接于底座,并具有气压通道,承载部具有与气压通道相互连通的通孔。缓冲结构设置于承载部,且缓冲结构的一表面对应于通孔,另一表面对应于基板,故当气压通道为负压状态时,可同时对缓冲结构产生负压的吸引力,使缓冲结构往通孔的方向移动或压缩。设置缓冲结构可避免对基板产生额外的应力,以达到缓冲基板、避免基板破裂的效果,及兼具吸附固定基板。Based on the above, the single substrate processing apparatus according to the present invention, whether used for wet processing of substrates (first embodiment) or calibration (second embodiment), includes a base and a substrate carrier. Wherein, the substrate carrier includes a fixed shaft, a bearing part and a buffer structure, the fixed shaft is connected to the base, and has an air pressure channel, and the bearing part has a through hole communicating with the air pressure channel. The buffer structure is arranged on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate, so when the air pressure channel is in a negative pressure state, it can simultaneously generate negative pressure attraction to the buffer structure, making the buffer structure Move or compress in the direction of the through hole. Setting the buffer structure can avoid extra stress on the substrate, so as to achieve the effect of buffering the substrate, preventing the substrate from cracking, and having the function of absorbing and fixing the substrate.

附图说明Description of drawings

图1A为本发明的第一实施例的单基板处理装置的示意图。FIG. 1A is a schematic diagram of a single substrate processing apparatus according to a first embodiment of the present invention.

图1B为图1A所示的基板载体的立体示意图。FIG. 1B is a schematic perspective view of the substrate carrier shown in FIG. 1A .

图2A为图1所示的基板载台的放大图。FIG. 2A is an enlarged view of the substrate stage shown in FIG. 1 .

图2B为图2A所示的气压通道于负压状态的示意图。FIG. 2B is a schematic diagram of the air pressure channel shown in FIG. 2A in a negative pressure state.

图3为图2所示的缓冲结构的另一实施态样的示意图。FIG. 3 is a schematic diagram of another implementation of the buffer structure shown in FIG. 2 .

图4为图1A所示的基板载台的另一实施态样的示意图。FIG. 4 is a schematic diagram of another embodiment of the substrate stage shown in FIG. 1A .

图5为本发明的第一实施例的单基板处理装置的另一实施态样的示意图。FIG. 5 is a schematic diagram of another implementation of the single substrate processing apparatus according to the first embodiment of the present invention.

图6为本发明的第二实施例的单基板处理装置的示意图。FIG. 6 is a schematic diagram of a single substrate processing apparatus according to a second embodiment of the present invention.

图7为本发明的第二实施例的单基板处理装置的另一实施态样的上视图。FIG. 7 is a top view of another embodiment of the single substrate processing apparatus according to the second embodiment of the present invention.

其中,附图标记:Among them, reference signs:

单基板处理装置1、1c、1d、1eSingle substrate processing apparatus 1, 1c, 1d, 1e

底座10、10c、10d、10eBase 10, 10c, 10d, 10e

基板载台20、20a、20b、20c、20d、20eSubstrate stage 20, 20a, 20b, 20c, 20d, 20e

外侧壁201bOuter wall 201b

固定轴21、21b、21c、21dFixed shafts 21, 21b, 21c, 21d

气压通道211、211bAir pressure channels 211, 211b

开口212、212bOpenings 212, 212b

承载部22、22bCarrying parts 22, 22b

通孔221Via 221

缓冲结构23、23a、23b、23cBuffer structure 23, 23a, 23b, 23c

可动式缓冲部231、231a、231bMovable buffer parts 231, 231a, 231b

固定式缓冲部232、232a、232bFixed buffer parts 232, 232a, 232b

控制单元24control unit 24

外环缓冲结构25bOuter ring buffer structure 25b

顶缘251bTop edge 251b

收集单元30collection unit 30

流体清洗单元40cFluid cleaning unit 40c

流体加速单元50cFluid acceleration unit 50c

校准单元60d、60eCalibration unit 60d, 60e

基板90、90b、90c、90d、90eSubstrates 90, 90b, 90c, 90d, 90e

处理液100Treatment solution 100

第一高度H1First height H1

第二高度H2Second height H2

负压区域VNegative pressure area V

具体实施方式Detailed ways

为能让贵审查委员能更了解本发明的技术内容,特举较佳具体实施例说明如下。In order to enable your review committee members to better understand the technical content of the present invention, the preferred specific embodiments are described as follows.

图1A为本发明的第一实施例的单基板处理装置的示意图,图1B为图1A所示的基板载体的立体示意图,以下请同时参考图1A及图1B所示。首先,第一实施例的单基板处理装置1可用于对一基板90进行湿式处理,其中,单基板处理装置1包括一底座10、一基板载台20以及一收集单元30。基板载台20用于承载并固定基板90,而收集单元30设置于基板载台20的外侧,并可以升降以收集基板90经湿式处理后所喷散的处理液100(可先参考图5所示),其中有关收集单元30的形式及驱动方法,本发明并不限制。FIG. 1A is a schematic diagram of a single substrate processing apparatus according to a first embodiment of the present invention, and FIG. 1B is a schematic perspective view of the substrate carrier shown in FIG. 1A . Please refer to FIG. 1A and FIG. 1B together below. Firstly, the single substrate processing apparatus 1 of the first embodiment can be used for wet processing a substrate 90 , wherein the single substrate processing apparatus 1 includes a base 10 , a substrate carrier 20 and a collection unit 30 . The substrate stage 20 is used to carry and fix the substrate 90, and the collecting unit 30 is arranged on the outside of the substrate stage 20, and can be raised and lowered to collect the processing liquid 100 sprayed by the substrate 90 after the wet processing (refer to FIG. Shown), wherein the form and driving method of the collecting unit 30 are not limited by the present invention.

在本实施例中,基板载台20包括一固定轴21、一承载部22及一缓冲结构23。其中,基板载台20藉由固定轴21连接于底座10,而承载部22连接于固定轴21,用以承载并固定基板90。本实施例的基板载台20以负压吸附的方式固定基板90,对应的,固定轴21的内部具有一气压信道211,且气压信道211的开口212开设于承载部22。较佳的,固定轴21设置于基板载台20的中央区域,且气压信道211的开口212亦位于承载部22的中央区域,例如,位于承载部22的中心。In this embodiment, the substrate stage 20 includes a fixed shaft 21 , a supporting portion 22 and a buffer structure 23 . Wherein, the substrate stage 20 is connected to the base 10 through the fixed shaft 21 , and the carrying portion 22 is connected to the fixed shaft 21 for carrying and fixing the substrate 90 . The substrate stage 20 of this embodiment fixes the substrate 90 by negative pressure adsorption. Correspondingly, the fixed shaft 21 has an air pressure channel 211 inside, and the opening 212 of the air pressure channel 211 is opened on the carrying portion 22 . Preferably, the fixed shaft 21 is disposed at the central area of the substrate stage 20 , and the opening 212 of the air pressure channel 211 is also located at the central area of the carrying portion 22 , for example, at the center of the carrying portion 22 .

详细而言,本实施例的基板载台20更包括一控制单元24(图1A以方块图简单表示),较佳为气压控制单元,可控制气压信道211于一负压状态及一非负压状态之间转换,故可藉由调控气压通道211内的压力以缓冲地承载基板90并利用吸附的方式固定基板90。具体而言,基板载台20未承载基板90时,气压通道211为非负压状态(包括同外界大气压力的常压状态、或大于大气压力的正压状态),当基板90置于承载部22后,控制单元24可将气压信道211的内部压力转换为负压状态,以吸附并固定基板90。另外,本实施例的单基板处理装置1用于湿式处理工艺,较佳的,固定轴21可旋转地连接于底座10,使基板载台20可固定并旋转基板90。In detail, the substrate carrier 20 of this embodiment further includes a control unit 24 (simplified as a block diagram in FIG. 1A ), preferably an air pressure control unit, which can control the air pressure channel 211 in a negative pressure state and a non-negative pressure state. Therefore, the pressure in the air pressure channel 211 can be adjusted to buffer the substrate 90 and fix the substrate 90 by adsorption. Specifically, when the substrate stage 20 does not carry the substrate 90, the air pressure channel 211 is in a non-negative pressure state (including a normal pressure state with the same external atmospheric pressure, or a positive pressure state greater than the atmospheric pressure), and when the substrate 90 is placed on the carrying portion After 22, the control unit 24 can convert the internal pressure of the air pressure channel 211 into a negative pressure state, so as to absorb and fix the substrate 90 . In addition, the single substrate processing apparatus 1 of this embodiment is used for wet processing. Preferably, the fixed shaft 21 is rotatably connected to the base 10 so that the substrate stage 20 can fix and rotate the substrate 90 .

图2A为图1所示的基板载体的放大图,且图2A所示的气压通道211于非负压状态,请搭配参考图2A所示。本实施例的承载部22具有至少一通孔221,通孔221与气压通道211相互连通。又,缓冲结构23设置于承载部22,且缓冲结构23的一表面对应于通孔221,另一表面对应于基板90。较佳的,本实施例的缓冲结构23可为一弹性材质,例如软性硅胶或橡胶类等可以产生形变的材质。于外观上设计亦可设计为可压缩的构型,如图2A所示的缓冲结构23部分(可动式缓冲部231)为半圆形或拱形,其中可动式缓冲部231于此状态为缓冲地承载基板90。另外,缓冲结构23亦可为一导电材质,如金属或石墨等材质,而兼具有消除静电功能。又,亦可在缓冲结构23的制作中添加碳,调整缓冲结构23电阻值成为静电消散材料,以防止静电量聚集,亦即可降低基板90旋转时与空气或液体摩擦所产生的静电。FIG. 2A is an enlarged view of the substrate carrier shown in FIG. 1 , and the air pressure channel 211 shown in FIG. 2A is in a non-negative pressure state. Please refer to FIG. 2A for reference. The carrying portion 22 of this embodiment has at least one through hole 221 , and the through hole 221 communicates with the air pressure channel 211 . Moreover, the buffer structure 23 is disposed on the bearing portion 22 , and one surface of the buffer structure 23 corresponds to the through hole 221 , and the other surface corresponds to the substrate 90 . Preferably, the cushioning structure 23 of this embodiment can be an elastic material, such as soft silicone or rubber, which can produce deformation. The appearance design can also be designed as a compressible configuration. The buffer structure 23 part (movable buffer part 231) shown in Figure 2A is semicircular or arched, wherein the movable buffer part 231 is in this state The substrate 90 is supported in a cushioned manner. In addition, the buffer structure 23 can also be a conductive material, such as metal or graphite, which also has the function of eliminating static electricity. In addition, carbon can also be added to the buffer structure 23 to adjust the resistance of the buffer structure 23 to become a static dissipative material to prevent static electricity from accumulating, that is, to reduce the static electricity generated by friction with air or liquid when the substrate 90 rotates.

当气压通道211为负压状态时,由于通孔221与气压通道211相互连通,故可同时对缓冲结构23产生负压的吸引力,使缓冲结构23往通孔221的方向移动或压缩,如图2B所示,图2B为图2A所示的气压通道于负压状态的示意图。藉此避免对基板90产生额外的应力,以达到缓冲地承载基板90的效果及吸附固定基板90。When the air pressure channel 211 is in a negative pressure state, since the through hole 221 and the air pressure channel 211 communicate with each other, it can generate a negative pressure attraction to the buffer structure 23 at the same time, so that the buffer structure 23 moves or compresses in the direction of the through hole 221, such as As shown in FIG. 2B , FIG. 2B is a schematic diagram of the air pressure channel shown in FIG. 2A in a negative pressure state. In this way, additional stress on the substrate 90 is avoided, so as to achieve the effect of buffering the substrate 90 and absorbing and fixing the substrate 90 .

详细而言,缓冲结构23包括一可动式缓冲部231,即为前述的弹性材质,且剖面为可压缩的结构(例如半圆形、或拱形结构)。可动式缓冲部231覆盖于通孔221,故当控制单元24控制气压信道211于负压状态及非负压状态之间转换时,亦可以同时控制可动式缓冲部231于第一高度H1与第二高度H2之间移动。须说明的是,于此指可动式缓冲部231的中点可于第一高度H1与第二高度H2之间移动,并以通孔221的底缘为基准定义第一高度H1及第二高度H2。Specifically, the buffer structure 23 includes a movable buffer portion 231 , which is the aforementioned elastic material, and has a compressible cross-section (such as a semicircular or arched structure). The movable buffer part 231 covers the through hole 221, so when the control unit 24 controls the air pressure channel 211 to switch between the negative pressure state and the non-negative pressure state, it can also control the movable buffer part 231 at the first height H1 at the same time. Move between the second height H2. It should be noted that the midpoint of the movable buffer portion 231 can move between the first height H1 and the second height H2, and the first height H1 and the second height H1 are defined based on the bottom edge of the through hole 221. Height H2.

如图2A所示,藉由可动式缓冲部231的材质特性,当控制单元24控制气压信道211转换为非负压状态(例如常压或正压)的同时,藉由通孔221提供气压至可动式缓冲部231,以控制可动式缓冲部231的中点上升至第一高度H1。此时,可动式缓冲部231接触基板90,提供承载基板90的部分力量,并可避免基板90与硬质的承载部22接触。又,由于此时的基板载台20并未吸附基板90,故基板90可以自由输出入基板载台20。As shown in FIG. 2A, by virtue of the material characteristics of the movable buffer part 231, when the control unit 24 controls the air pressure channel 211 to switch to a non-negative pressure state (such as normal pressure or positive pressure), the air pressure is provided through the through hole 221. to the movable buffer part 231 to control the midpoint of the movable buffer part 231 to rise to the first height H1. At this moment, the movable buffer part 231 contacts the substrate 90 , provides part of the force for carrying the substrate 90 , and prevents the substrate 90 from contacting the rigid carrying part 22 . In addition, since the substrate stage 20 does not attract the substrate 90 at this time, the substrate 90 can be freely carried in and out of the substrate stage 20 .

如图2B所示,当控制单元24将气压信道211转换至负压状态的同时,亦控制可动式缓冲部231产生形变,而使可动式缓冲部231的中点下降至第二高度H2。此时,固定轴21的气压通道211可透过开口212以吸附基板90,同时,因基板90紧贴于承载部22,使可动式缓冲部231与基板90之间形成一负压区域V,亦可协助吸附基板90。换言之,固定轴21与可动式缓冲部231共同吸附基板90,藉此将基板90固定于基板载台20,而可续行湿式处理程序。透过气压的控制让可动式缓冲部231上升或下降,以达到缓冲基板90的效果,并可减少基板90因应力或裂痕而出现破裂。气压通道211的开口212开设于承载部22的中心,与可动式缓冲部231共同吸附住基板90,更可防止基板90因旋转而产生位移。As shown in Figure 2B, when the control unit 24 switches the air pressure channel 211 to a negative pressure state, it also controls the deformation of the movable buffer part 231, so that the midpoint of the movable buffer part 231 drops to the second height H2 . At this time, the air pressure channel 211 of the fixed shaft 21 can pass through the opening 212 to absorb the substrate 90. At the same time, because the substrate 90 is closely attached to the supporting part 22, a negative pressure area V is formed between the movable buffer part 231 and the substrate 90. , can also help to adsorb the substrate 90 . In other words, the fixed shaft 21 and the movable buffer part 231 jointly absorb the substrate 90, thereby fixing the substrate 90 on the substrate stage 20, and continuing the wet processing procedure. Through the control of the air pressure, the movable buffer part 231 is raised or lowered, so as to achieve the effect of buffering the substrate 90 and reduce the cracking of the substrate 90 due to stress or cracks. The opening 212 of the air pressure passage 211 is opened at the center of the supporting part 22, and together with the movable buffer part 231, absorbs the substrate 90, and prevents the substrate 90 from being displaced due to rotation.

在本实施例中,可动式缓冲部231为一环型结构,以同心圆的方式环绕设置于气压信道211的开口212的外围,如图1B所示。在其他实施例中,可动式缓冲部231a亦可以为多个单元所组成的环形结构,如图3所示,图3为图2所示的缓冲结构的另一实施态样的示意图。换言之,图1B所示的可动式缓冲部231为连续的环型结构,而图3所示的可动式缓冲部231a为不连续、分段的结构,其结构形状,本发明并不限制。In this embodiment, the movable buffer part 231 is a ring structure, which surrounds the periphery of the opening 212 of the air pressure channel 211 in a concentric manner, as shown in FIG. 1B . In other embodiments, the movable buffer portion 231a can also be a ring structure composed of multiple units, as shown in FIG. 3 , which is a schematic diagram of another implementation of the buffer structure shown in FIG. 2 . In other words, the movable buffer portion 231 shown in FIG. 1B is a continuous annular structure, while the movable buffer portion 231a shown in FIG. 3 is a discontinuous and segmented structure, and its structural shape is not limited by the present invention. .

复参考图2A及图2B所示,较佳的,缓冲结构23亦包括至少一固定式缓冲部232,本实施例以多个固定式缓冲部232为例说明,并设置于承载部22。固定式缓冲部232的设置,可增加吸附基板90时的缓冲效果。详细而言,当控制单元24控制可动式缓冲部231的中点下降至第二高度H2时,固定式缓冲部232可接触基板90,以减少基板90与硬质的承载部22的接触面积。因此,当基板90于吸附状态时,亦可藉由固定式缓冲部232达到良好的缓冲效果。Referring again to FIG. 2A and FIG. 2B , preferably, the buffer structure 23 also includes at least one fixed buffer portion 232 . The arrangement of the fixed buffer part 232 can increase the buffering effect when the substrate 90 is adsorbed. In detail, when the control unit 24 controls the midpoint of the movable buffer part 231 to drop to the second height H2, the fixed buffer part 232 can contact the substrate 90 to reduce the contact area between the substrate 90 and the rigid bearing part 22 . Therefore, when the substrate 90 is in the suction state, a good buffer effect can also be achieved by the fixed buffer portion 232 .

本发明对于固定式缓冲部232的数量及设置方式并无特别限制,较佳的,可具有二条以上的固定式缓冲部232,并分别设置于可动式缓冲部231的内侧及外侧。换言之,二条以上(前述的可动式缓冲部231的内侧及外侧)的固定式缓冲部232可共同形成沟槽状结构,而沟槽内可设置可动式缓冲部231。另外,如同可动式缓冲部231的排列方式,固定式缓冲部232亦可为连续或不连续的结构(图1B以不连续的环状结构,并同样以开口212为圆心,呈同心圆式排列为例)。The present invention has no special limitation on the number and arrangement of the fixed buffer parts 232 , preferably, there may be more than two fixed buffer parts 232 , which are respectively arranged inside and outside of the movable buffer part 231 . In other words, more than two fixed buffer parts 232 (inside and outside of the aforementioned movable buffer part 231 ) can jointly form a groove-like structure, and the movable buffer part 231 can be disposed in the groove. In addition, like the arrangement of the movable buffer part 231, the fixed buffer part 232 can also be a continuous or discontinuous structure (Fig. array as an example).

图4为图1A所示的基板载台的另一实施态样的示意图,请参考图4所示。当基板90b具有或凹或凸的不规则形的弧度时,基板载台20b更可包括一外环缓冲结构25b,其设置于基板载台20b的一外侧壁201b,且外环缓冲结构25b的一顶缘251b接触基板90b。藉由外环缓冲结构25b的顶缘251b与不平整的基板90b相互接触,除了协助承载基板90b以外,更可使基板载台20b与基板90b之间形成封闭的空间,让固定轴21b的气压通道211b可透过开口212b吸附住基板90b,并可降低具有不规则弧度的基板90b在工艺中产生破裂的情形。在本实施例中,外环缓冲结构25b设置于承载部22b的外侧壁201b,且外环缓冲结构25b的底部的厚度较厚。外环缓冲结构25b亦可为其他构型,本发明并不限制,仅须使外环缓冲结构25b的顶缘251b可接触基板90b,让基板载台20b与基板90b之间可形成封闭的空间即可。FIG. 4 is a schematic diagram of another embodiment of the substrate carrier shown in FIG. 1A , please refer to FIG. 4 . When the substrate 90b has a concave or convex irregular curvature, the substrate stage 20b may further include an outer ring buffer structure 25b, which is arranged on an outer wall 201b of the substrate stage 20b, and the outer ring buffer structure 25b A top edge 251b contacts the substrate 90b. With the top edge 251b of the outer ring buffer structure 25b in contact with the uneven substrate 90b, in addition to assisting in carrying the substrate 90b, a closed space can be formed between the substrate stage 20b and the substrate 90b, allowing the air pressure of the fixed shaft 21b to The channel 211b can absorb the substrate 90b through the opening 212b, and can reduce the cracking of the substrate 90b with irregular curvature during the process. In this embodiment, the outer ring buffer structure 25b is disposed on the outer wall 201b of the bearing portion 22b, and the bottom of the outer ring buffer structure 25b is thicker. The outer ring buffer structure 25b can also be in other configurations, the present invention is not limited, only the top edge 251b of the outer ring buffer structure 25b can contact the substrate 90b, so that a closed space can be formed between the substrate carrier 20b and the substrate 90b That's it.

图5为本发明的第一实施例的单基板处理装置的另一实施态样的示意图,请参考图5所示。须说明的是,本说明书将用于湿式处理的单基板处理装置1、1c称为第一实施例,而用于校准的单基板处理装置1d、1e称为第二实施例(后续进一步说明)。在本实施例中,单基板处理装置1c更包括一流体清洗单元40c,设置于底座10c,且环绕及固定设置于基板载台20c的外围。在湿处理程序中,流体清洗单元40c会提供需要的处理液100以清洗基板90c,清洗后的处理液100排放至基板载台20c外围的收集单元(为求图面简洁而未绘制,可参考图1A的收集单元30)进行收集。较佳的,单基板处理装置1c更包括一流体加速单元50c,其旋转式设置于底座10c,且环绕设置于流体清洗单元40c的外围。其中,流体加速单元50c可控制转速,相对于基板载台20c进行转动,流体加速单元50c在承接由基板载台20c旋转排出的处理液100后,进一步加速转动以将处理液100向外排出至收集单元30(同前说明,请参考图1A所示),以达成处理液100有效排出的功效。FIG. 5 is a schematic diagram of another implementation of the single substrate processing apparatus according to the first embodiment of the present invention, please refer to FIG. 5 . It should be noted that, in this specification, the single substrate processing apparatus 1, 1c used for wet processing is referred to as the first embodiment, and the single substrate processing apparatus 1d, 1e used for calibration is referred to as the second embodiment (further description will follow) . In this embodiment, the single substrate processing apparatus 1c further includes a fluid cleaning unit 40c, which is disposed on the base 10c, and is surrounded and fixedly disposed on the periphery of the substrate stage 20c. In the wet processing procedure, the fluid cleaning unit 40c will provide the required processing liquid 100 to clean the substrate 90c, and the cleaned processing liquid 100 is discharged to the collection unit on the periphery of the substrate carrier 20c (not drawn for simplicity of the drawing, refer to The collection unit 30) of FIG. 1A performs the collection. Preferably, the single substrate processing device 1c further includes a fluid acceleration unit 50c, which is rotatably disposed on the base 10c and is disposed around the periphery of the fluid cleaning unit 40c. Wherein, the fluid acceleration unit 50c can control the rotation speed and rotate relative to the substrate stage 20c. After the fluid acceleration unit 50c receives the processing liquid 100 discharged from the substrate stage 20c, it further accelerates the rotation to discharge the processing liquid 100 to the outside. The collection unit 30 (as described above, please refer to FIG. 1A ) is used to effectively discharge the treatment liquid 100 .

图6为本发明的第二实施例的单基板处理装置的示意图,请参考图6所示。第二实施例的单基板处理装置1d用于对一基板90d进行校准。单基板处理装置1d包括一底座10d、一基板载台20d以及一校准单元60d。基板载台20d同样以固定轴21d连接于底座10d,而关于基板载台20d的元件结构及其链接关系,及基板载台20d承载并固定基板90d的作动,可参考第一实施例的基板载台20(20a、20b、20c),于此不加赘述。FIG. 6 is a schematic diagram of a single substrate processing apparatus according to a second embodiment of the present invention, please refer to FIG. 6 . The single substrate processing apparatus 1d of the second embodiment is used for calibrating a substrate 90d. The single substrate processing device 1d includes a base 10d, a substrate stage 20d and a calibration unit 60d. The substrate stage 20d is also connected to the base 10d by the fixed shaft 21d. Regarding the component structure and link relationship of the substrate stage 20d, and the movement of the substrate stage 20d carrying and fixing the substrate 90d, please refer to the substrate of the first embodiment. The carrier 20 (20a, 20b, 20c) will not be described in detail here.

本实施例的校准单元60d为光学检测单元,其设置于底座10d,并位于基板载台20d上方,以对基板载台20d所承载并固定的基板90d进行校准。校准单元60d利用光学的方式检测基板90d的定位,进行校准(例如可检测全基板或检测基板的边缘),且校准单元60d可控制基板载台20d旋转基板90d,以及位移基板载台20d,以对基板90d进行校准。其中,校准单元60d的光学检测可设置单一光学元件(请参考图6所示),亦可设置多个光学元件,例如光传送元件搭配光接收元件,以达到对位的光学检测(图未示),本发明并不限制。The calibration unit 60d of this embodiment is an optical detection unit, which is disposed on the base 10d and above the substrate stage 20d to calibrate the substrate 90d carried and fixed by the substrate stage 20d. The calibration unit 60d uses an optical method to detect the position of the substrate 90d for calibration (for example, it can detect the entire substrate or detect the edge of the substrate), and the calibration unit 60d can control the substrate stage 20d to rotate the substrate 90d, and displace the substrate stage 20d to Calibration is performed on the substrate 90d. Wherein, the optical detection of the calibration unit 60d can be equipped with a single optical element (please refer to FIG. 6 ), or multiple optical elements, such as a light transmitting element paired with a light receiving element, to achieve alignment optical detection (not shown in the figure). ), the present invention is not limited.

图7为本发明的第二实施例的单基板处理装置的另一实施态样的上视图,请参考图7所示。本实施例的单基板处理装置1e用于对一基板90e进行校准,并可适用于具损伤的基板(例如基板具翘曲或异常凸起)。单基板处理装置1e包括一底座10e、一基板载台20e以及一校准单元60e,同样的,基板载台20e连接于底座10e,而关于其连接方式,以及基板载台20e的元件结构及其承载基板90e的作动,可参考第一实施例的基板载台20(20a、20b、20c),于此不加赘述。在本实施例中,校准单元60e为三个圆柱,并设置于底座10e。若基板90e无损伤,校准单元60e(三个圆柱)则可一次正确夹持基板90e,完成基板校准。若校准单元60e的三个圆柱无法一次皆正确夹持基板90e,则校准单元60e可控制基板载台20e旋转基板90e,并对基板90e进行多次夹持。具体而言,控制基板载台20e每旋转基板90e一预设角度时,同时控制夹持单元(本实施例为三个圆柱)对基板90e进行一次夹持(因此,每旋转一预设角度,则对基板90e进行一次夹持,分为多次对基板90e进行校准)。在此须注意的是,该预设角度没有特别限制,可依据需求决定,且校准单元60e控制基板载台20e旋转的次数也不限,仅需进行到能完成基板90e的基板校准程序即可。FIG. 7 is a top view of another embodiment of the single substrate processing apparatus according to the second embodiment of the present invention, please refer to FIG. 7 . The single substrate processing apparatus 1e of this embodiment is used to calibrate a substrate 90e, and is applicable to damaged substrates (for example, substrates with warpage or abnormal protrusions). The single substrate processing device 1e includes a base 10e, a substrate carrier 20e, and a calibration unit 60e. Similarly, the substrate carrier 20e is connected to the base 10e. Regarding its connection method, and the component structure and loading of the substrate carrier 20e For the movement of the substrate 90e, reference may be made to the substrate stage 20 (20a, 20b, 20c) of the first embodiment, and details are not repeated here. In this embodiment, the calibration units 60e are three cylinders and are disposed on the base 10e. If the substrate 90e is not damaged, the calibration unit 60e (three cylinders) can correctly clamp the substrate 90e once to complete the calibration of the substrate. If the three cylinders of the calibration unit 60e cannot correctly clamp the substrate 90e at one time, the calibration unit 60e can control the substrate stage 20e to rotate the substrate 90e and clamp the substrate 90e multiple times. Specifically, when the substrate carrier 20e is controlled to rotate the substrate 90e by a preset angle, the clamping unit (three cylinders in this embodiment) is controlled to clamp the substrate 90e once (thus, every time a preset angle is rotated, Then the substrate 90e is clamped once, divided into several times to calibrate the substrate 90e). It should be noted here that the preset angle is not particularly limited, and can be determined according to requirements, and the number of times the calibration unit 60e controls the rotation of the substrate stage 20e is not limited, it only needs to be carried out until the substrate calibration procedure of the substrate 90e can be completed. .

综上所述,依据本发明的单基板处理装置,不论是用于对基板进行湿式处理(第一实施例)或是进行校准(第二实施例),其皆包括底座及基板载台。其中,基板载台包括固定轴、承载部及缓冲结构,固定轴连接于底座,并具有气压通道,承载部具有与气压通道相互连通的通孔。缓冲结构设置于承载部,且缓冲结构的一表面对应于通孔,另一表面对应于基板,故当气压通道为负压状态时,可同时对缓冲结构产生负压的吸引力,使缓冲结构往通孔的方向移动或压缩。藉此可避免对基板产生额外的应力,以达到缓冲基板、避免基板破裂的效果,及兼具吸附固定基板。To sum up, the single substrate processing apparatus according to the present invention, whether it is used for wet processing of substrates (first embodiment) or for calibration (second embodiment), includes a base and a substrate carrier. Wherein, the substrate carrier includes a fixed shaft, a bearing part and a buffer structure, the fixed shaft is connected to the base, and has an air pressure channel, and the bearing part has a through hole communicating with the air pressure channel. The buffer structure is arranged on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate, so when the air pressure channel is in a negative pressure state, it can simultaneously generate negative pressure attraction to the buffer structure, making the buffer structure Move or compress in the direction of the through hole. In this way, additional stress on the substrate can be avoided, so as to achieve the effect of buffering the substrate, preventing the substrate from cracking, and simultaneously absorbing and fixing the substrate.

需注意的是,惟以上所述者,仅为本发明的较佳实施例而已,当不能以此限定本发明实施的范围,即凡依本发明申请专利范围及专利说明书内容所作的简单的等效变化与修饰,皆仍属本发明所附权利要求的保护范围内。It should be noted that the above-mentioned ones are only preferred embodiments of the present invention, and should not limit the implementation scope of the present invention, that is, all simple etc. Effective changes and modifications all still fall within the protection scope of the appended claims of the present invention.

Claims (11)

1.一种单基板处理装置,用于对一基板进行湿式处理,其特征在于,该单基板处理装置包括:1. A single substrate processing device, for carrying out wet processing to a substrate, characterized in that, the single substrate processing device comprises: 一底座;a base; 一基板载台,包括:A substrate carrier, comprising: 一固定轴,连接于该底座,该固定轴的内部具有一气压通道;A fixed shaft, connected to the base, has an air pressure channel inside the fixed shaft; 一承载部,连接于该固定轴,并承载该基板,该承载部具有至少一通孔,该通孔与该气压通道相互连通;及a bearing part, connected to the fixed shaft, and bearing the substrate, the bearing part has at least one through hole, and the through hole communicates with the air pressure channel; and 一缓冲结构,设置于该承载部,且该缓冲结构的一表面对应于该通孔,另一表面对应于该基板;以及A buffer structure is arranged on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate; and 一收集单元,设置于该基板载台的外侧,收集该基板经湿式处理的一处理液。A collection unit is arranged on the outside of the substrate platform, and collects a processing solution of the substrate after wet processing. 2.一种单基板处理装置,用于对一基板进行校准,其特征在于,该单基板处理装置包括:2. A single substrate processing device for calibrating a substrate, characterized in that the single substrate processing device comprises: 一底座;a base; 一基板载台,包括:A substrate carrier, comprising: 一固定轴,连接于该底座,该固定轴的内部具有一气压通道;A fixed shaft, connected to the base, has an air pressure channel inside the fixed shaft; 一承载部,连接该固定轴,并承载该基板,该承载部具有至少一通孔,该通孔与该气压通道相互连通;及a bearing part, connected to the fixed shaft, and bearing the substrate, the bearing part has at least one through hole, and the through hole communicates with the air pressure channel; and 一缓冲结构,设置于该承载部,且该缓冲结构的一表面对应于该通孔,另一表面对应于该基板;以及A buffer structure is arranged on the bearing part, and one surface of the buffer structure corresponds to the through hole, and the other surface corresponds to the substrate; and 一校准单元,控制该基板载台旋转该基板,并对该基板进行校准。A calibration unit controls the substrate carrier to rotate the substrate and calibrates the substrate. 3.如权利要求1或2所述的单基板处理装置,其特征在于,该缓冲结构包括至少一可动式缓冲部,该可动式缓冲部覆盖于该通孔,其中该基板载台更包括一控制单元,其控制该可动式缓冲部于一第一高度及一第二高度之间移动。3. The single substrate processing apparatus according to claim 1 or 2, wherein the buffer structure comprises at least one movable buffer portion covering the through hole, wherein the substrate carrier is further It includes a control unit, which controls the movable buffer part to move between a first height and a second height. 4.如权利要求3所述的单基板处理装置,其特征在于,当该控制单元控制该可动式缓冲部上升至该第一高度,该可动式缓冲部接触该基板,当该控制单元控制该可动式缓冲部下降至该第二高度,该可动式缓冲部与该基板形成一负压区域,该可动式缓冲部吸附该基板。4. The single substrate processing apparatus according to claim 3, wherein when the control unit controls the movable buffer part to rise to the first height, the movable buffer part touches the substrate, and when the control unit The movable buffer part is controlled to descend to the second height, the movable buffer part and the substrate form a negative pressure area, and the movable buffer part absorbs the substrate. 5.如权利要求4所述的单基板处理装置,其特征在于,该缓冲结构更包括至少一固定式缓冲部,当该控制单元控制该可动式缓冲部下降至该第二高度,该可动式缓冲部与该基板形成该负压区域,该固定式缓冲部接触该基板。5. The single substrate processing apparatus according to claim 4, wherein the buffer structure further comprises at least one fixed buffer, and when the control unit controls the movable buffer to descend to the second height, the movable The movable buffer part and the substrate form the negative pressure area, and the fixed buffer part contacts the substrate. 6.如权利要求3所述的单基板处理装置,其特征在于,该控制单元为一气压控制单元,其控制该气压通道于一负压状态及一非负压状态之间转换,以控制该可动式缓冲部于该第一高度与该第二高度之间移动。6. The single substrate processing apparatus as claimed in claim 3, wherein the control unit is an air pressure control unit, which controls the air pressure channel to switch between a negative pressure state and a non-negative pressure state, so as to control the The movable buffer moves between the first height and the second height. 7.如权利要求6所述的单基板处理装置,其特征在于,该固定轴设置于该基板载台的中央区域,且该气压信道的一开口位于该承载部的中央区域,该可动式缓冲部设置于该开口的外围,当该气压控制单元控制该气压信道转换至该负压状态,该可动式缓冲部下降至该第二高度,该气压通道的该开口与该可动式缓冲部共同吸附该基板。7. The single substrate processing apparatus as claimed in claim 6, wherein the fixed shaft is disposed at a central area of the substrate carrier, and an opening of the air pressure channel is located at the central area of the carrying portion, and the movable The buffer part is arranged on the periphery of the opening. When the air pressure control unit controls the air pressure channel to switch to the negative pressure state, the movable buffer part descends to the second height, and the opening of the air pressure channel and the movable buffer The parts jointly adsorb the substrate. 8.如权利要求7所述的单基板处理装置,其特征在于,该可动式缓冲部为一环型结构,环绕设置于该气压通道的该开口的外围。8 . The single substrate processing apparatus as claimed in claim 7 , wherein the movable buffer portion is a ring structure surrounding the periphery of the opening of the air pressure channel. 9.如权利要求3所述的单基板处理装置,其特征在于,该基板载台更包括一外环缓冲结构,设置于该基板载台的一外侧壁,且该外环缓冲结构的一顶缘接触该基板。9. The single substrate processing apparatus according to claim 3, wherein the substrate carrier further comprises an outer ring buffer structure disposed on an outer side wall of the substrate carrier, and a top of the outer ring buffer structure edge contacts the substrate. 10.如权利要求1所述的单基板处理装置,其特征在于,更包括:10. The single substrate processing apparatus according to claim 1, further comprising: 一流体清洗单元,设置于该底座,且环绕设置于该基板载台的外围。A fluid cleaning unit is arranged on the base and is arranged around the periphery of the substrate carrier. 11.如权利要求10所述的单基板处理装置,其特征在于,更包括:11. The single substrate processing apparatus according to claim 10, further comprising: 一流体加速单元,可旋转式设置于该底座,且环绕设置于该流体清洗单元的外围。A fluid accelerating unit is rotatably arranged on the base and is arranged around the periphery of the fluid cleaning unit.
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