CN108006489B - Light projector - Google Patents
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- CN108006489B CN108006489B CN201711216257.0A CN201711216257A CN108006489B CN 108006489 B CN108006489 B CN 108006489B CN 201711216257 A CN201711216257 A CN 201711216257A CN 108006489 B CN108006489 B CN 108006489B
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V31/00—Gas-tight or water-tight arrangements
- F21V31/005—Sealing arrangements therefor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/007—Array of lenses or refractors for a cluster of light sources, e.g. for arrangement of multiple light sources in one plane
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/008—Combination of two or more successive refractors along an optical axis
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
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Landscapes
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- General Engineering & Computer Science (AREA)
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- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
Description
技术领域technical field
本发明属于照明领域,具体涉及一种投光灯。The invention belongs to the field of lighting, in particular to a floodlight.
背景技术Background technique
投光灯是一种结构简单、使用方便灵活的投射照明灯具,主要用于大面积作业场矿、建筑物轮廓、体育场、立交桥、纪念碑、公园及花坛等场所。Flood light is a kind of projection lighting fixture with simple structure, convenient and flexible use, mainly used in large-area mines, building outlines, stadiums, overpasses, monuments, parks, flower beds and other places.
目前的投射灯基本都是采用LED芯片作为其发光源,由于投射灯的亮度要求较高,其发光源通常采用大功率的LED芯片,在长时间工作条件下,会产生大量的热量。由于散热措施不当,使得核心部件长期工作在高温环境中,器件老化严重,极大地缩短了投光灯的使用寿命。The current projection lamps basically use LED chips as their luminous sources. Due to the high brightness requirements of the projection lamps, the luminous sources usually use high-power LED chips, which will generate a lot of heat under long-term working conditions. Due to improper heat dissipation measures, the core components work in a high temperature environment for a long time, and the components are seriously aged, which greatly shortens the service life of the floodlight.
发明内容SUMMARY OF THE INVENTION
为了解决现有技术中存在的上述问题,本发明提供了一种散热效果好、高可靠性的投光灯。该投光灯10包括:支架11、底座12、LED灯13、反光杯14、散热片15及透镜16;其中,In order to solve the above problems existing in the prior art, the present invention provides a floodlight with good heat dissipation effect and high reliability. The
所述底座12与所述支架11相连接;The
所述LED灯13固接在所述底座12上表面中间位置处;The
所述反光杯14固接在所述底座12上表面且位于所述LED灯13的外侧;The
所述散热片15固接在所述底座12上表面且位于所述反光杯14的外侧;The
所述透镜16固接在所述反光杯14顶端。The
在本发明的一个实施例中,所述底座12与所述支架11的连接部为角度可调结构。In an embodiment of the present invention, the connection portion between the
在本发明的一个实施例中,所述底座12由铝材料制作形成。In one embodiment of the present invention, the
在本发明的一个实施例中,所述反光杯14由PPS材料制作形成。In an embodiment of the present invention, the
在本发明的一个实施例中,所述散热片15由铝材料制作形成。In one embodiment of the present invention, the
在本发明的一个实施例中,所述散热片15外表面设置有凹形沟槽。In an embodiment of the present invention, the outer surface of the
在本发明的一个实施例中,所述透镜16由钢化玻璃制作形成。In an embodiment of the present invention, the
在本发明的一个实施例中,所述透镜16与所述反光杯14之间设置有硅胶密封圈。In an embodiment of the present invention, a silicone sealing ring is provided between the
在本发明的一个实施例中,所述LED灯13包括:In an embodiment of the present invention, the
散热基板21;
LED芯片,固接在所述散热基板21上;The LED chip is fixed on the
硅胶层,包括依次设置于所述LED芯片上表面的第一透镜层22、第一封装层23、第二透镜层24及第二封装层25,其中,所述第一透镜层22的折射率大于所述第一封装层23的折射率,所述第二透镜层24大于所述第二封装层25的折射率,所述第一封装层23的折射率小于所述第二封装层25的折射率。The silica gel layer includes a
在本发明的一个实施例中,所述LED芯片为氮化镓基蓝光芯片。In an embodiment of the present invention, the LED chip is a gallium nitride-based blue light chip.
与现有技术相比,本发明的有益效果是:Compared with the prior art, the beneficial effects of the present invention are:
本发明提供的投光灯,散热效果好,结构简单,使用寿命长。The floodlight provided by the invention has good heat dissipation effect, simple structure and long service life.
附图说明Description of drawings
图1为本发明实施例提供的一种投光灯的结构示意图;1 is a schematic structural diagram of a floodlight provided by an embodiment of the present invention;
图2为本发明实施例提供的一种LED灯的结构示意图;FIG. 2 is a schematic structural diagram of an LED lamp according to an embodiment of the present invention;
图3为本发明实施例提供的一种LED封装方法流程示意图;3 is a schematic flowchart of an LED packaging method according to an embodiment of the present invention;
图4为本发明实施例提供的一种GaN基蓝光芯片的结构示意图;4 is a schematic structural diagram of a GaN-based blue light chip provided by an embodiment of the present invention;
图5为本发明实施例提供的一种LED灯发光原理示意图;FIG. 5 is a schematic diagram of a light-emitting principle of an LED lamp according to an embodiment of the present invention;
图6A为本发明实施例提供的一种多个半球形透镜的排列示意图;6A is a schematic diagram of the arrangement of a plurality of hemispherical lenses according to an embodiment of the present invention;
图6B为本发明实施例提供的另一种多个半球形透镜的排列示意图。FIG. 6B is a schematic diagram of another arrangement of a plurality of hemispherical lenses according to an embodiment of the present invention.
具体实施方式Detailed ways
下面结合具体实施方式对本发明作进一步的详细描述。但不应将此理解为本发明上述主题的范围仅限于以下的实施例,凡基于本发明内容所实现的技术均属于本发明的范围。The present invention will be further described in detail below in conjunction with specific embodiments. However, it should not be construed that the scope of the above-mentioned subject matter of the present invention is limited to the following embodiments, and all technologies realized based on the content of the present invention belong to the scope of the present invention.
实施例一Example 1
请参见图1,图1为本发明实施例提供的一种投光灯的结构示意图。该投光灯10包括:支架11、底座12、LED灯13、反光杯14、散热片15及透镜16;其中,Please refer to FIG. 1 , which is a schematic structural diagram of a floodlight according to an embodiment of the present invention. The
所述底座12与所述支架11相连接;The
所述LED灯13固接在所述底座12上表面中间位置处;The
所述反光杯14固接在所述底座12上表面且位于所述LED灯13的外侧;The
所述散热片15固接在所述底座12上表面且位于所述反光杯14的外侧;The
所述透镜16固接在所述反光杯14顶端。The
本实施例提供的投光灯,在其光源附近进行了散热优化设计,其散热效果好,结构简单,使用寿命长。The floodlight provided in this embodiment has a heat dissipation optimization design near the light source, and has good heat dissipation effect, simple structure and long service life.
实施例二
本实施例是在实施例一的基础上对本发明的原理及实现方式作进一步的说明。This embodiment further describes the principle and implementation manner of the present invention on the basis of the first embodiment.
具体的,所述底座12与所述支架11的连接部为角度可调结构。在实施应用中,投光灯10的照射角度往往会不同,因此在此处设计为角度可调结构,以保证其使用于各种场所。Specifically, the connection portion between the
优选地,所述底座12与所述散热片15均由铝材料制作形成。铝材料密度小、价格低,是一种良好的散热材料,被广泛用于电子产品中。Preferably, the
进一步地,所述所述散热片15外表面设置有凹形沟槽。在散热片15外表面设置凹形沟槽的目的是为了增大散热面积,以提高其散热效率。Further, the outer surface of the
优选地,所述反光杯163为高纯铝材料。因为高纯铝反光杯的成本较低、耐温性能佳,且还有散热的效果。Preferably, the reflector cup 163 is made of high-purity aluminum material. Because the high-purity aluminum reflector has low cost, good temperature resistance, and has the effect of heat dissipation.
优选地,所述反光杯14由PPS材料制作形成。PPS材料具有耐高温的特性。由于投光灯10中LED灯13会产生大量的热量,导致内部温度较高,而PPS材料在此温度下不会产生变形。另外,PPS材料还具有耐腐蚀及优越的机械性能等特性,因此可以作为反光杯的材料。Preferably, the
优选地,所述透镜16由钢化玻璃制作形成。钢化玻璃具有强度大、不易破碎、易于加工、透光性好等特点,因此可以优选为制作透镜16的材料。Preferably, the
进一步地,所述透镜16与所述反光杯14之间设置有硅胶密封圈。该硅胶密封圈用于防止水汽进出到投光灯10内部,对其内部各器件起到保护作用。Further, a silicone sealing ring is arranged between the
此外,为了改善LED灯13的发光效率与散热效果,对其结构也进行了优化设计,具体的,请参见图2,图2为本发明实施例提供的一种LED灯的结构示意图,该LED灯13包括:In addition, in order to improve the luminous efficiency and heat dissipation effect of the
散热基板21;
LED芯片,固接在所述散热基板21上;The LED chip is fixed on the
硅胶层,包括依次设置于所述LED芯片上表面的第一透镜层22、第一封装层23、第二透镜层24及第二封装层25,其中,所述第一透镜层22的折射率大于所述第一封装层23的折射率,所述第二透镜层24大于所述第二封装层25的折射率,所述第一封装层23的折射率小于所述第二封装层25的折射率。The silica gel layer includes a
所述第一透镜层22和所述第二透镜层24分别由多个半球形透镜组成。The
进一步地,所述第二透镜层24和所述第二封装层25含有荧光粉。Further, the
进一步地,所述散热基板21材料为实心铜板,且所述散热基板21的厚度大于0.5毫米、小于10毫米。Further, the material of the
进一步地,所述第一透镜层22的折射率大于所述第一封装层23的折射率,所述第二透镜层24大于所述第二封装层25的折射率,所述第一封装层23的折射率小于所述第二封装层25的折射率。Further, the refractive index of the
进一步地,所述第二封装层25的上表面为弧形。Further, the upper surface of the
进一步地,所述第一透镜层22和所述第一封装层23由耐高温硅胶制成。Further, the
进一步地,多个所述半球形透镜的直径为10-200微米,且多个所述半球形透镜均匀间隔排列,间距为10-200微米。Further, the diameters of the plurality of the hemispherical lenses are 10-200 microns, and the plurality of the hemispherical lenses are evenly spaced with a spacing of 10-200 microns.
进一步地,多个所述半球形透镜呈矩形排列,或者交错排列。Further, a plurality of the hemispherical lenses are arranged in a rectangle or in a staggered arrangement.
进一步地,还包括支架,所述散热基板21通过卡扣或粘胶方式固定于所述支架上。Further, a bracket is also included, and the
进一步地,所述LED芯片为氮化镓基蓝光芯片。Further, the LED chip is a gallium nitride-based blue light chip.
本发明的有益效果具体为:The beneficial effects of the present invention are specifically:
1、通过设置第一透镜层和第二透镜层,使得光照更加集中,并将第二封装层的上表面设置为弧形,对光束进行整形,避免了增加额外透镜,降低了生产成本。1. By arranging the first lens layer and the second lens layer, the light is more concentrated, and the upper surface of the second encapsulation layer is set in an arc shape to shape the light beam, which avoids adding additional lenses and reduces the production cost.
2、通过在第二透镜层和第二封装层设置荧光粉,避免了将荧光粉直接涂敷在LED芯片上,解决了在高温条件下引起的荧光粉的量子效率下降的问题。2. By arranging phosphors on the second lens layer and the second encapsulation layer, it is avoided to directly coat the phosphors on the LED chips, and the problem that the quantum efficiency of the phosphors is reduced under high temperature conditions is solved.
3、利用不同种类硅胶和荧光粉胶折射率不同的特点,第一封装层的折射率小于第二封装层的折射率,第一透镜层的折射率大于第一封装层的折射率,第二透镜层的折射率既大于第一封装层的折射率,又大于第二封装层的折射率,该种设置方式可以避免全反射,使得LED芯片发出的光能够更多的透过封装材料照射出去。3. Taking advantage of the different refractive indices of different types of silica gel and phosphor glue, the refractive index of the first encapsulation layer is smaller than that of the second encapsulation layer, the refractive index of the first lens layer is greater than that of the first encapsulation layer, and the second The refractive index of the lens layer is greater than the refractive index of the first packaging layer and the refractive index of the second packaging layer. This arrangement can avoid total reflection, so that the light emitted by the LED chip can be irradiated through the packaging material more .
4、通过对半球形透镜采用不同的排布方式,可以保证光源的光线在集中区均匀分布。4. By adopting different arrangements for the hemispherical lenses, the light of the light source can be uniformly distributed in the concentrated area.
5、本发明实施例通过设置双透镜层,透镜可以改变光的传播方向,能够有效地抑制全反射效应,有利于更多的光发射到LED外面,提高LED的发光效率。5. In the embodiment of the present invention, by providing a double lens layer, the lens can change the propagation direction of light, which can effectively suppress the total reflection effect, which is conducive to the emission of more light to the outside of the LED and improves the luminous efficiency of the LED.
实施例三
请参见图3,图3为本发明实施例提供的一种LED封装方法流程示意图;在上述实施例的基础上,本实施例将较为详细地对本发明的工艺流程进行介绍。该方法包括:Referring to FIG. 3 , FIG. 3 is a schematic flowchart of an LED packaging method according to an embodiment of the present invention; on the basis of the above embodiment, this embodiment will introduce the process flow of the present invention in more detail. The method includes:
步骤1、准备散热基板21;Step 1. Prepare the
具体的包括:选取所述散热基板21;Specifically, it includes: selecting the
清洗所述散热基板21,将散热基板21上面的污渍,尤其是油渍清洗干净;cleaning the heat-dissipating
将所述散热基板21烘干。The
步骤2、准备LED芯片,并将所述LED芯片固接在所述散热基板21上;
本发明实施例中,如图4所示,图4为本发明实施例提供的一种GaN基蓝光芯片的结构示意图;其中层1为衬底材料,层2为GaN缓冲层,层3为N型GaN层,层4和层6为P型GaN量子阱宽带隙材料,层5为INGaN发光层,层7为AlGaN阻挡层材料,层8为P型GaN层,该氮化镓基蓝光灯芯的厚度介于90微米-140微米之间;将LED芯片的阴极引线和阳极引线利用回流焊焊接工艺焊接到散热基板21上方,然后对焊线进行检查,合格,则进入下步工序,若不合格,则重新焊接。In an embodiment of the present invention, as shown in FIG. 4 , FIG. 4 is a schematic structural diagram of a GaN-based blue light chip provided in an embodiment of the present invention; wherein layer 1 is a substrate material,
步骤X1、分别配置用于制备所述第一透镜层22和所述第一封装层23的硅胶材料;Step X1, respectively configuring the silica gel material for preparing the
具体的,制备第一透镜层22的硅胶材料和制备第一封装层23的硅胶材料均不含有荧光粉,且为耐高温硅胶材料;所述第一透镜层22的折射率小于所述第一封装层23的折射率。Specifically, the silica gel material for preparing the
步骤X2、分别配置用于制备所述第二透镜层24的含有荧光粉的硅胶材料和用于制备所述第二封装层25的含有荧光粉的硅胶材料,Step X2, respectively disposing the silica gel material containing phosphor powder for preparing the
具体的,基于本发明实施例中,LED芯片为氮化镓基蓝光芯片,因此,上述荧光粉为黄色荧光粉;将硅胶和黄色荧光粉进行混合,调节原料配比,以制成不用折射率的硅胶材料,并且,将硅胶与荧光粉混合后,需要对混合后的硅胶材料进行颜色测试,保证LED芯片照射到荧光粉上,发出的荧光的波长范围在570nm-620nm之间。Specifically, based on the embodiment of the present invention, the LED chip is a gallium nitride-based blue light chip. Therefore, the above-mentioned phosphor is a yellow phosphor; the silica gel and the yellow phosphor are mixed, and the ratio of the raw materials is adjusted, so as to make a non-refractive index After mixing the silica gel with the phosphor powder, it is necessary to perform a color test on the mixed silica gel material to ensure that the LED chip is irradiated on the phosphor powder, and the wavelength range of the fluorescence emitted is between 570nm-620nm.
优选的,所述第二透镜层24的折射率大于所述第一封装层23的折射率,也大于所述第二封装层25的折射率。Preferably, the refractive index of the
步骤3、在所述LED芯片的上表面形成第一透镜层22,所述第一透镜层22包括多个第一半球形透镜;
步骤31、采用第一半球形模具在所述LED芯片上方形成多个半球形硅胶球;Step 31, using a first hemispherical mold to form a plurality of hemispherical silica gel balls above the LED chip;
步骤32、对所述多个半球形硅胶球进行第一初烤、脱模和打磨,以形成第一透镜层22,所述第一初烤温度为90-125°,时间为15-60分钟。Step 32: Perform a first initial baking, demoulding and grinding on the plurality of hemispherical silica gel balls to form the
优选的,第一透镜层22上的多个第一半球形透镜的排列方式可以为矩形或者菱形,或者交错排列,相邻的两个第一半球形透镜的间距越小越好。Preferably, the arrangement of the plurality of first hemispherical lenses on the
步骤4、在所述LED芯片上表面和所述第一透镜层22上方形成第一封装层23;Step 4, forming a
步骤41、在所述LED芯片上表面和所述第一透镜层22上方涂覆第一硅胶层;Step 41, coating a first silica gel layer on the upper surface of the LED chip and above the
步骤42、对所述第一硅胶层进行第二初烤和打磨,以形成所述第一封装层23,所述第二初烤温度为90-125°,时间为15-60分钟。Step 42 , performing a second preliminary baking and polishing on the first silica gel layer to form the
具体的,第一硅胶层的下表面与LED芯片接触或者与第一透镜层22接触,其中,第一硅胶层的上表面为平面,以便于在其上设置第二透镜层24,并且良好的平整度有利于光束透过第一封装层23。Specifically, the lower surface of the first silicone layer is in contact with the LED chip or in contact with the
步骤5、在所述第一封装层23上方形成第二透镜层24,所述第二透镜层24包括多个第二半球形透镜,且多个所述第二半球形透镜含有荧光粉;Step 5, forming a
步骤51、利用第二半球形模具在所述第一封装层23上方形成多个半球形硅胶球,所述半球形硅胶球内含有荧光粉;Step 51 , using a second hemispherical mold to form a plurality of hemispherical silica gel balls above the
步骤52、对所述多个半球形硅胶球进行第三初烤、脱模和打磨,以形成第二透镜层24,所述第三初烤温度为90-125°,时间为15-60分钟。Step 52: Perform a third preliminary baking, demoulding and grinding on the plurality of hemispherical silica gel balls to form the
步骤6、在所述第二透镜层24上方形成第二封装层25,且所述第二封装层25含有荧光粉;Step 6, forming a
步骤61、在所述第二透镜层24和所述第一封装层23上方涂覆第二硅胶层;Step 61: Coating a second silica gel layer on the
步骤62、利用所述半球形模具使所述第二硅胶层的上表面形成弧形;Step 62, using the hemispherical mold to form an arc on the upper surface of the second silica gel layer;
步骤63、对所述第二硅胶层进行第四初烤、脱模和打磨,以形成第二封装层25,第四初烤温度为90-125°,时间为15-60分钟。Step 63 , performing a fourth preliminary baking, demoulding and polishing on the second silica gel layer to form the
具体的,将第二封装层25的上表面设置为弧形,形成了中间高、两端低的外观特点,使得第二封装层25具有了大透镜的作用,可对光束进行二次整形,而且不需要增加外部透镜,降低了生产成本。Specifically, the upper surface of the
步骤7、将包括所述第一透镜层22、所述第一封装层23、所述第二透镜层24以及所述第二封装层25的LED灯进行长烤,以完成所述LED的封装。
具体的,长烤的烘烤温度为100~150℃,烘烤时间为4~12h,以消除LED灯的内部应力。Specifically, the baking temperature of the long baking is 100-150° C., and the baking time is 4-12 hours, so as to eliminate the internal stress of the LED lamp.
完成LED封装后,还包括测试、分捡封装完成的LED以及包装测试合格的LED灯等内容,以利于后续产品应用。After the LED packaging is completed, it also includes testing, sorting the packaged LEDs, and packaging and testing qualified LED lights to facilitate subsequent product applications.
实施例四Embodiment 4
请结合图2、图5以及图6A和图6B所示,图2为本发明实施例提供的一种LED灯的结构示意图;图5为本发明实施例提供的一种LED灯发光原理示意图;图6A为本发明实施例提供的一种多个半球形透镜的排列示意图;图6B为本发明实施例提供的另一种多个半球形透镜的排列示意图。2, FIG. 5, and FIGS. 6A and 6B, FIG. 2 is a schematic structural diagram of an LED lamp provided by an embodiment of the present invention; FIG. 5 is a schematic diagram of a lighting principle of an LED lamp provided by an embodiment of the present invention; FIG. 6A is a schematic diagram of an arrangement of a plurality of hemispherical lenses according to an embodiment of the present invention; FIG. 6B is a schematic diagram of an arrangement of another plurality of hemispherical lenses according to an embodiment of the present invention.
其中,本发明实施例提供的LED灯,包括Wherein, the LED lamp provided by the embodiment of the present invention includes
散热基板21;
LED芯片,固接在所述封装散热基板21上;The LED chip is fixed on the package
硅胶层,包括依次设置于所述LED芯片上表面的第一透镜层22、第一封装层23、第二透镜层24和第二封装层25,其中,所述第一透镜层22和所述第二透镜层24分别由多个半球形透镜组成。The silica gel layer includes a
由此可知,本发明实施例的LED灯中,第一透镜层22和第二透镜层24堆叠,形成多层透镜结构,该种结构使得光照在集中区更加均匀,而且与LED芯片接触的第一透镜层22和第一封装层23均不含有荧光粉,这样避免了芯片将向后散热的光线吸收掉,所以提高了取光效率。It can be seen from this that in the LED lamp of the embodiment of the present invention, the
在本发明实施例中,LED芯片为氮化镓基蓝光芯片,所述第二透镜层24和所述第二封装层25含有黄色荧光粉,当氮化镓基蓝光芯片发光,如图5所示,LED芯片照射到黄色荧光粉上时,激发黄色荧光粉发光最终形成白光,这样将LED芯片与荧光粉分离,解决了在高温条件下引起的荧光粉的量子效率下降的问题。In the embodiment of the present invention, the LED chip is a gallium nitride based blue light chip, the
本发明实施例中,所述散热基板21材料为实心铜板,且所述散热基板21的厚度大于0.5毫米、小于10毫米,其中,铜板的热容大,导热性好,LED芯片工作时产生的热量,可以快速地通过实心铜板散发出去,而且散热基板21的厚度介于0.5-10mm之间,厚度较大可以防止散热基板21受热变形,保证散热基板21与LED芯片紧密接触,保证散热效果。In the embodiment of the present invention, the material of the
本发明实施例中,所述第一透镜层22的折射率大于所述第一封装层23的折射率,所述第二透镜层24大于所述第二封装层25的折射率,所述第一封装层23的折射率小于所述第二封装层25的折射率。本发明实施例中,第一透镜层22和第二透镜层24上的多个半球形透镜的材料可以是由聚碳酸脂、聚甲基丙烯酸甲脂和玻璃混合而成,根据各个成分的不同可调节半球形透镜的折射率,第一封装层23不含有荧光粉,其主要构成材料可以是有机硅材料等,而第二封装层25的材料可以是甲基硅橡胶和苯基高折射率有机硅橡胶混合而成,本发明实施例中,透镜层的折射率大于封装层的折射率,封装层的折射率从下向上依次增大,该种设置方式能够较好地抑制全反射现象,使得光照最大化地照射出去,避免全反射使得光被封装结构吸收变为热量,提高了取光效率。In the embodiment of the present invention, the refractive index of the
需要说明的是,本发明实施例中,第二封装层25的折射率越小越好,不超过1.5,以避免与外界空气形成较大的折射率差,导致光全反射,被封装材料吸收转为热量,影响出光效率。It should be noted that, in the embodiment of the present invention, the refractive index of the
需要说明的是,本发明实施例中,第一透镜层22上包含多个第一半球形透镜,该些第一半球形透镜为“平凸镜”,其焦距f=R/(n2-n1),其中,n2是第一透镜层22的折射率和第二透镜层24的折射率取平均值,n1是取第二透镜层24上下两层封装层的折射率的平均值(本发明实施例中第一封装层23的折射率小于第二封装层25,但二者的折射率取值较为相近似,折射率差不大),R是第一半球形透镜的半径。It should be noted that, in the embodiment of the present invention, the
为了保证光从第一透镜层22出射后到达第二透镜层24时为聚拢状态,本发明实施例中,第一透镜层22和第二透镜层24之间的距离L的高度应该在2倍焦距以内,也即L的范围不超过2R/(n2-n1)。In order to ensure that the light exits from the
此外,本发明实施例中,第二封装层25的厚度较厚,第二透镜层24的顶面到第二封装层25的上表面一般在50-500微米之间。In addition, in the embodiment of the present invention, the thickness of the
本发明实施例中,所述第二封装层25的上表面为弧形,所述弧形具体可以为半球形、抛物线型或者扁平形,其中半球形出光角最大,适合于普通照明应用;抛物面出光角最小,适合于局部照明应用;而扁平形介于两者之间,适合于指示照明;因此,可根据产品应用场所来选择具体的形状,以期达到最好的使用效果。这样中间高,两边低的外观结构使得第二封装层25具有透镜的作用,当光照射到第二封装层25表面时,经过第二封装层25的整形,使得光照更加集中均匀,而且不需要增加外部透镜,降低了生产成本。In the embodiment of the present invention, the upper surface of the
由于LED工作时,会产生大量的热,导致硅胶材料受热会发生黄化,影响光照颜色以及产品使用寿命,因此,本发明实施例中,与LED芯片直接接触的第一透镜层22和第一封装层23由耐高温硅胶制成。Since a large amount of heat is generated when the LED is working, the silicone material will be yellowed when heated, which affects the color of the light and the service life of the product. Therefore, in the embodiment of the present invention, the
本发明实施例中,多个所述半球形透镜的直径为10-200微米,且多个所述半球形透镜均匀间隔排列,间距为10-200微米,如图2所示,多个半球形透镜的直径为2R,介于10-200微米之间,需要说明的是,多个半球形透镜的直径可以相同也可以不同,相邻两个半球形透镜之间的距离为A,A的范围介于10-200微米之间,相邻的两个半球形透镜之间的距离越小越好,并且间距A可以各不相同,也可以均匀排列,本实施例对此不做限制。In the embodiment of the present invention, the diameter of a plurality of the hemispherical lenses is 10-200 microns, and the plurality of the hemispherical lenses are evenly spaced with a spacing of 10-200 microns. As shown in FIG. 2 , a plurality of hemispherical lenses are The diameter of the lens is 2R, which is between 10-200 microns. It should be noted that the diameters of multiple hemispherical lenses can be the same or different. The distance between two adjacent hemispherical lenses is A, and the range of A Between 10-200 microns, the smaller the distance between two adjacent hemispherical lenses, the better, and the distance A may be different from each other, or evenly arranged, which is not limited in this embodiment.
本发明实施例中,对多个半球形透镜的排列方式也进行了适当限定,如图6A所示,多个半球形透镜呈矩形排列,或者如图6B所示,多个半球形透镜交错排列。具体的,本发明实施例中,第一透镜层22采用矩形排列,第二透镜层24采用交错排列,或者相互调换,以实现第一透镜层22和第二透镜层24的半球形透镜交错排列的效果,交错排列可以将相邻透镜间的光聚拢,产生聚焦作用。In the embodiment of the present invention, the arrangement of the plurality of hemispherical lenses is also appropriately limited. As shown in FIG. 6A , the plurality of hemispherical lenses are arranged in a rectangular shape, or as shown in FIG. 6B , the plurality of hemispherical lenses are arranged in a staggered manner. . Specifically, in the embodiment of the present invention, the first lens layers 22 are arranged in a rectangular shape, and the second lens layers 24 are arranged in a staggered manner, or are interchanged with each other, so as to realize the staggered arrangement of the hemispherical lenses of the
而当第一透镜层22和第二透镜层24的半球形透镜的排列方式一致时,可以对LED芯片产生的杂乱无章的光进行整形,使光聚拢。When the arrangement of the hemispherical lenses of the
本发明实施例中,所述封装结构还包括支架,散热基板21固定于支架上,固定方式有卡扣、粘胶等方式。In the embodiment of the present invention, the packaging structure further includes a bracket, and the
具体的,本发明实施例中,散热基板21为实心铜质基板,散热基板21的厚度D介于0.5-10mm之间,散热基板21的宽度W根据LED芯片的大小进行裁切,在此不做限制,铜质基板热容大,导热性好,而且不易受热变形,使得对LED芯片的散热性更好。第一透镜层22,每个半球形透镜的半径为R,相邻两个半球形透镜的间距为A,第一透镜层22的顶面到第二透镜层24的底面的距离为L,L介于0—2R/(n2-n1)之间,第二透镜层24设置于第一封装层23的上方,第二透镜层24上的多个半球形透镜的半径也为R,且第二透镜层24上的多个半球形透镜的顶面到第二封装层25的上表面的距离介于50-500微米,本发明实施例中,第二封装层25的上表面为弧形,形成了一个较大的透镜,以对光束进行二次整形,而避免了增加外部透镜,因此降低了生产成本。Specifically, in the embodiment of the present invention, the
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still be The technical solutions described in the foregoing embodiments are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
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| CN205480519U (en) * | 2016-02-18 | 2016-08-17 | 中山市久能光电科技有限公司 | An LED lamp capable of increasing light intensity |
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| CN207880542U (en) * | 2017-11-28 | 2018-09-18 | 西安科锐盛创新科技有限公司 | Projecting Lamp |
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| CN102270629A (en) * | 2010-06-01 | 2011-12-07 | Lg伊诺特有限公司 | Light emitting device package and lighting system |
| CN205480519U (en) * | 2016-02-18 | 2016-08-17 | 中山市久能光电科技有限公司 | An LED lamp capable of increasing light intensity |
| CN107342353A (en) * | 2017-06-06 | 2017-11-10 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | One kind focuses on ultraviolet LED encapsulating structure and preparation method thereof |
| CN207880542U (en) * | 2017-11-28 | 2018-09-18 | 西安科锐盛创新科技有限公司 | Projecting Lamp |
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