CN107960008A - A kind of integrated circuit plate - Google Patents
A kind of integrated circuit plate Download PDFInfo
- Publication number
- CN107960008A CN107960008A CN201711424428.9A CN201711424428A CN107960008A CN 107960008 A CN107960008 A CN 107960008A CN 201711424428 A CN201711424428 A CN 201711424428A CN 107960008 A CN107960008 A CN 107960008A
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- Prior art keywords
- integrated circuit
- circuit plate
- insulating layer
- layer
- gas sensor
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000011435 rock Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 53
- 230000035945 sensitivity Effects 0.000 description 13
- 239000012491 analyte Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0272—Adaptations for fluid transport, e.g. channels, holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10151—Sensor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The present invention provides a kind of integrated circuit plate, including：Pcb board, it has a groove body；Metal layer, it is formed in the bottom surface of groove body；Insulating layer, it is formed in the upper surface of metal layer；Array gas sensor, it is formed in the upper surface of insulating layer, and is arranged in array fashion at the upper surface of insulating layer；Conductive contact, it is arranged on the metal layer, and extends to the upper surface of insulating layer, and array gas sensor is connected with external circuit；Be formed in the air gap on array gas sensor top, its be array gas sensor top sacrifice layer remove formed afterwards；The support column being formed in air gap；And metallic cover layer, it is formed in the top of support column, and has at least one venthole at cap rock, is contacted for introducing a gas into air gap, and then with array gas sensor.Gas sensor and capacitor are integrated on the pcb board of integrated circuit plate by the integrated circuit plate, thus, not only save raw material, pcb board is maximally utilised.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of integrated circuit plate.
Background technology
Integrated circuit plate can be divided into Analogous Integrated Electronic Circuits plate and digital two major classes by its function, the difference of structure.Simulation
For producing, amplifying and handling the various analog signals (signal that fingerbreadth degree changes with time borderland.Such as transistor radio
The tape signal etc. of audio signal, videocorder), and numeral is used for producing, amplify and handle various digital signals and (refers in time
With the signal of discrete value in amplitude.Such as the audio signal and vision signal of VCD, DVD playback).
Gas sensor is from operation principle, specificity analysis to e measurement technology, from material therefor to manufacturing process, from detection pair
As that to application field, independent criteria for classification can be formed, derive a numerous and complicated numerous and jumbled taxonomic hierarchies.Gas sensor
Mainly there is following characteristic：Stability, sensitivity, selectivity and corrosion resistance.
Stability refers to the stability that sensor responds substantially within the whole working time, depending on null offset and section
Drift.Null offset refers to that when not having object gas whole working time inner sensor exports the change of response.Section drifts about
Refer to the output response change that sensor is continuously placed in object gas, show as sensor output signal at work in
Reduce.Ideally, for a sensor under the conditions of continuous work, annual null offset is less than 10%.
Sensitivity refers to that sensor exporting change amount inputs the ratio between variable quantity with tested, depends on sensor construction institute
The technology used.The design principle of majority of gas sensor all uses biochemistry, electrochemistry, physics and optics.First have to
What is considered is a kind of sensitive technology of selection, its valve limitation to object gas is (TLV-thresh-oldlimitvalue) or minimum
The detection of the percentage of explosion limit (LEL-lowerexplosivelimit) will have enough sensitivitys.
Selectivity is also referred to as cross sensitivity.Can be by measuring the biography as caused by the interference gas of a certain concentration
Sensor is responded to determine.This response is equivalent to sensor caused by certain density object gas and responds.This characteristic exists
Follow the trail of and be very important in the application of multiple gases, because cross sensitivity can reduce the repeatability and reliability of measurement, reason
Think that sensor should have high sensitivity and high selectivity.
Corrosion resistance refers to the ability that sensor is exposed in high-volume fractional object gas.When gas largely leaks,
Probe should be able to bear 10~20 times of desired gas volume fraction.In the case where returning to normal running conditions, sensor drift and zero point
Corrected value should be as small as possible.
The essential characteristic of gas sensor, i.e. sensitivity, selectivity and stability etc., mainly by the selection of material come
Determine.Appropriate material and exploitation new material are selected, is optimal the sensitivity characteristic of gas sensor.
At present, the substrate of integrated circuit plate is typically pcb board, is integrated by gas sensor and capacitor, and
It is that single gas sensing and single capacitor are connected with integrated circuit plate respectively when being connected with the integrated circuit plate.
So set, due to being comparable to three single device arrangements together, cause the volume of device larger, heavier mass,
It is unsatisfactory for the trend minimized at present.
The content of the invention
In order to solve the above technical problem, the present invention provides a kind of integrated circuit plate, including：
Pcb board, it has a groove body；
Metal layer, it is formed in the bottom surface of the groove body；
Insulating layer, it is formed in the upper surface of the metal layer；
Array gas sensor, it is formed in the upper surface of the insulating layer, and is arranged in array fashion described exhausted
At the upper surface of edge layer；
Conductive contact, it is arranged on the metal layer, and extends to the upper surface of the insulating layer, by the array
Gas sensor is connected with external circuit；
The air gap on the array gas sensor top is formed in, it is the sacrifice on the array gas sensor top
Layer removes what is formed afterwards；
The support column being formed in the air gap；With
Metallic cover layer, it is formed in the top of the support column, and has at least one venthole at the cap rock, uses
In introducing a gas into the air gap, and then contacted with the array gas sensor.
Wherein, the insulating layer conformation is into U shape, including bottom wall and side wall, the thickness of the bottom wall of the insulating layer
Thickness of the degree less than any side wall in two side surfaces of the insulating layer.
Further, two electrodes of the metal layer and the metallic cover layer as capacitor.
Further, the integrated circuit plate further includes：
First conducting wire, its one end are in contact with the conductive contact, and the other end is connected with the external circuit；
Wherein, first conducting wire, which buries, overlays in the side wall of the insulating layer.
Further, the integrated circuit plate further includes：
Second conducting wire, its one end are in contact with the metallic cover layer, and the other end is connected with the external circuit；
Wherein, second conducting wire, which buries, overlays in the side wall of the insulating layer.
Further, the metal layer is metallic film, and the thickness of the metallic film is 100-1000nm.
Further, the support column is insulator.
Further, the metallic cover layer is arranged to the just mouth place planes align with the groove body.
Further, the material of the insulating layer is flexible high molecular material, and the material of the metallic cover layer is flexible high
Molecule.
Further, the thickness of the air gap is greater than or equal to the sum of the thickness of the insulating layer and the metallic cover layer
1-2 times.
Further, the array gas sensor is circular array or square array.
Gas sensor and capacitor are integrated in integrated circuit plate by scheme according to the present invention, the integrated circuit plate
On pcb board, thus, raw material is not only saved, pcb board is maximally utilised, and three devices are integrated into a device
Part, all greatly reduces from volume and quality.In addition, the first conducting wire is led on side wall from the bottom wall of insulating layer, and it is
Bury and overlay in insulating layer, on the one hand, there is very strong protective effect to the first conducting wire, be unlikely to expose away conduction, increase
Reliability, on the other hand, leads to side wall from bottom wall by the first conducting wire, greatly facilitates the setting of external circuit, and appearance
Beauty, is unlikely to connect up in disorder.Second conducting wire, which equally buries, to be overlayed in insulating layer, has the effect same with the first conducting wire.In addition,
Due to the formation of air gap so that the sensing site that extraneous gas can be fully with array gas sensor comes into full contact with, greatly
Ground improves the sensitivity of array gas sensor.
According to the accompanying drawings will be brighter to the detailed description of the specific embodiment of the invention, those skilled in the art
Above-mentioned and other purposes, the advantages and features of the present invention.
Brief description of the drawings
Some specific embodiments of detailed description of the present invention by way of example, and not by way of limitation with reference to the accompanying drawings hereinafter.
Identical reference numeral denotes same or similar component or part in attached drawing.It should be appreciated by those skilled in the art that these
What attached drawing was not necessarily drawn to scale.In attached drawing：
Fig. 1 is the schematic diagram of integrated circuit plate according to an embodiment of the invention.
Reference numeral：
10-PCB plates,
101- groove bodies,
20- metal layers,
30- insulating layers,
40- array gas sensors,
50- conductive contacts,
60- air gaps,
70- support columns,
80- metallic cover layers,
801- ventholes,
The first conducting wires of 90-,
The second conducting wires of 100-.
Embodiment
Fig. 1 shows the schematic diagram of integrated circuit plate according to an embodiment of the invention.As shown in Figure 1, institute
Integrated circuit plate is stated, including：Pcb board 10, it has a groove body 101；Metal layer 20, it is formed in the bottom surface of the groove body 101；
Insulating layer 30, it is formed in the upper surface of the metal layer 20；Array gas sensor 40, it is formed in the insulating layer 30
Upper surface, and be arranged in array fashion at the upper surface of the insulating layer 30；Conductive contact 50, it is arranged in the metal
On layer 20, and the upper surface of the insulating layer 30 is extended to, the array gas sensor 40 is connected with external circuit；Formed
Air gap 60 on 40 top of array gas sensor, it is the sacrifice layer removal on 40 top of array gas sensor
Formed afterwards；The support column 70 being formed in the air gap 60；With metallic cover layer 80, it is formed in the upper of the support column 70
Portion, and there is at least one venthole 801 at the cap rock, for introducing a gas into the air gap 60, and then with it is described
Array gas sensor 40 contacts.
In a preferred embodiment, which includes power contact pad.The group of the power contact pad includes corresponding
The power contact pad of adjacent gas sensor chip.It means that the gas sensor that electric current will be provided at the same time for its heater
Chip by chip is arranged on carrier.It is adjacent to mean in any direction to be arranged as them side by side.
The array gas sensor 40 includes sensitive layer, and the sensitive layer can be by sensitive to one or more analytes
Material form.The sensitive layer can be arranged to independent layer segment adjacent to each other and spaced apart from each other including multiple, with
Structure includes the sensor array of the group of sensor unit, wherein it is possible to which sensor unit is interpreted as what can individually be read
The entity of gas sensor.Preferably, in the embodiment of sensor array, each of described layer segment or at least some
Suitable for sensing analyte, particularly suitable for different analytes are sensed.Analyte can include (such as) H2O、CO2、NOX, ethanol, CO,
One or more of ozone, ammonia, formaldehyde or dimethylbenzene, but not limited to this.Specifically, the sensitive layer can contain metal
Oxide material, especially metal oxide semiconductor material, can specifically contain with heterogeneity in each layer segment
Metal oxide materials.Metal oxide materials can generally include tin oxide, zinc oxide, titanium oxide, tungsten oxide, indium oxide
One or more of with gallium oxide.Can use such metal oxide detect such as VOC, carbon monoxide, nitrogen dioxide,
The analyte of methane, ammonia or hydrogen sulfide.Metal oxide sensor based on the principle that, i.e. gaseous analytes are in sensitivity
Interact at the elevated temperature of layer with metal oxide layer, the elevated temperature is in the range of more than 100 DEG C, especially
It is between 250 DEG C and 350 DEG C.Due to catalytic reaction, the conductivity of sensitive layer can change, can be right
The change is measured.Thus, for the reason for the chemical property of analyte is converted into resistance at a high temperature of sensitive layer,
Such chemical sensor is also known as high temeperature chemistry resistor.Preferably, can be to gas using such gas sensor
Studied, the research is at least with the object analysis thing with the presence or absence of gas sensor sensitivity.Therefore, it is possible to using institute
Sensitive layer is stated to analyze the gas for being supplied to gas sensor, it is quick with the presence or absence of this among the gas provided to judge
Feel the chemical substance or mixture and there are which sensitive chemical material or mixture of layer sensitivity.Examined in the gas provided
The combination of the analyte measured may show certain smell.The theme of the design of gas sensor always relates to gas sensing
The device analyte-sensitive different to how many kinds of, and/or gas sensor are sensitive to the how many kinds of different qualities of analyte.
In one embodiment, the insulating layer 30 is configured to U shape, including bottom wall and side wall, the insulating layer 30
The bottom wall thickness be less than the insulating layer 30 two side surfaces in any side wall thickness.
In a preferred embodiment, two electricity of the metal layer 20 and the metallic cover layer 80 as capacitor
Pole.
Wherein, the integrated circuit plate further includes：First conducting wire 90, its one end are in contact with the conductive contact 50, separately
One end is connected with the external circuit；Wherein, first conducting wire 90, which buries, overlays in the side wall of the insulating layer 30.The integrated electricity
Road plate further includes：Second conducting wire 100, its one end are in contact with the metallic cover layer 80, and the other end is connected with the external circuit；
Wherein, second conducting wire 100, which buries, overlays in the side wall of the insulating layer 30.
In one embodiment, the metal layer 20 is metallic film, the thickness of the metallic film is 100nm,
Any value in 300nm, 600nm or 1000nm or 100-1000nm.
The support column 70 is insulator.The metallic cover layer 80 is arranged to just with being put down where the mouth of the groove body 101
Face flushes.The material of the insulating layer 30 is flexible high molecular material, and the material of the metallic cover layer 80 is flexible macromolecule.Institute
The thickness for stating air gap 60 is greater than or equal to 1-2 times of the sum of the thickness of the insulating layer 30 and the metallic cover layer 80.The battle array
Row gas sensor 40 is circular array or square array.
Gas sensor and capacitor are integrated in integrated circuit plate by scheme according to the present invention, the integrated circuit plate
On pcb board 10, thus, raw material is not only saved, pcb board 10 is maximally utilised, and three devices are integrated into one
A device, all greatly reduces from volume and quality.In addition, the bottom wall of the first conducting wire 90 from insulating layer 30 is led into side wall
On, and be to bury to overlay in insulating layer 30, on the one hand, there is very strong protective effect to the first conducting wire 90, be unlikely to conduction
Expose away, increase reliability, on the other hand, the first conducting wire 90 is led into side wall from bottom wall, greatly facilitates external circuit
Setting, it is and specious, be unlikely to connect up in disorder.Second conducting wire 100, which equally buries, to be overlayed in insulating layer 30, is had and first
The same effect of conducting wire 90.Further, since the formation of air gap 60 so that extraneous gas can fully with array gas sensor
40 sensing site comes into full contact with, and drastically increases the sensitivity of array gas sensor 40.
So far, although those skilled in the art will appreciate that detailed herein have shown and described multiple showing for the present invention
Example property embodiment, still, without departing from the spirit and scope of the present invention, still can according to the present invention disclosure it is direct
Determine or derive many other variations or modifications for meeting the principle of the invention.Therefore, the scope of the present invention is understood that and recognizes
It is set to and covers other all these variations or modifications.
Claims (10)
- A kind of 1. integrated circuit plate, it is characterised in that including：Pcb board, it has a groove body；Metal layer, it is formed in the bottom surface of the groove body；Insulating layer, it is formed in the upper surface of the metal layer；Array gas sensor, it is formed in the upper surface of the insulating layer, and is arranged in the insulating layer in array fashion Upper surface at；Conductive contact, it is arranged on the metal layer, and extends to the upper surface of the insulating layer, by the array gas Sensor is connected with external circuit；The air gap on the array gas sensor top is formed in, it is that sacrifice layer on the array gas sensor top is gone Except what is formed afterwards；The support column being formed in the air gap；WithMetallic cover layer, it is formed in the top of the support column, and has at least one venthole at the cap rock, for inciting somebody to action Gas is introduced in the air gap, and then is contacted with the array gas sensor；Wherein, the insulating layer conformation is small into U shape, including bottom wall and side wall, the thickness of the bottom wall of the insulating layer The thickness of any side wall in two side surfaces of the insulating layer.
- 2. integrated circuit plate according to claim 1, it is characterised in that the metal layer and the metallic cover layer are as electricity Two electrodes of container.
- 3. integrated circuit plate according to claim 1, it is characterised in that the integrated circuit plate further includes：First conducting wire, its one end are in contact with the conductive contact, and the other end is connected with the external circuit；Wherein, first conducting wire, which buries, overlays in the side wall of the insulating layer.
- 4. integrated circuit plate according to claim 1, it is characterised in that the integrated circuit plate further includes：Second conducting wire, its one end are in contact with the metallic cover layer, and the other end is connected with the external circuit；Wherein, second conducting wire, which buries, overlays in the side wall of the insulating layer.
- 5. according to the integrated circuit plate any one of claim 1-4, it is characterised in that the metal layer is metal foil Film, the thickness of the metallic film is 100-1000nm.
- 6. integrated circuit plate according to claim 5, it is characterised in that the support column is insulator.
- 7. integrated circuit plate according to claim 6, it is characterised in that the metallic cover layer be arranged to just with the groove Planes align where the mouth of body.
- 8. according to the integrated circuit plate any one of claim 1-4, it is characterised in that the material of the insulating layer is soft Property high molecular material, the material of the metallic cover layer is flexible macromolecule.
- 9. integrated circuit plate according to claim 8, it is characterised in that the thickness of the air gap is greater than or equal to described exhausted 1-2 times of the sum of the thickness of edge layer and the metallic cover layer.
- 10. integrated circuit plate according to claim 8, it is characterised in that the array gas sensor is circular array Or square array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711424428.9A CN107960008B (en) | 2017-12-25 | 2017-12-25 | Integrated circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711424428.9A CN107960008B (en) | 2017-12-25 | 2017-12-25 | Integrated circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107960008A true CN107960008A (en) | 2018-04-24 |
| CN107960008B CN107960008B (en) | 2020-06-12 |
Family
ID=61956958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711424428.9A Expired - Fee Related CN107960008B (en) | 2017-12-25 | 2017-12-25 | Integrated circuit board |
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| Country | Link |
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| CN (1) | CN107960008B (en) |
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| WO2017055806A1 (en) * | 2015-09-30 | 2017-04-06 | Cambridge Cmos Sensors Limited | Gas sensor with a gas permeable region |
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-
2017
- 2017-12-25 CN CN201711424428.9A patent/CN107960008B/en not_active Expired - Fee Related
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|---|---|---|---|---|
| DE19544303A1 (en) * | 1994-11-29 | 1997-06-05 | Martin Hausner | Device and method for controlling the selectivity of gas-sensitive chemical compounds via external potentials |
| US20020027086A1 (en) * | 2000-05-13 | 2002-03-07 | Saffell John R. | Electrochemical sensor for determining analyte in the presence of interferent |
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| US20160209344A1 (en) * | 2015-01-15 | 2016-07-21 | Samsung Electro-Mechanics Co., Ltd. | Complex sensor and method of manufacturing the same |
| CN204681590U (en) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | MEMS microphone, pressure sensor integrated morphology |
| WO2017055806A1 (en) * | 2015-09-30 | 2017-04-06 | Cambridge Cmos Sensors Limited | Gas sensor with a gas permeable region |
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