CN107603329A - A kind of liquid development photosensitive solder resist ink and preparation method thereof - Google Patents
A kind of liquid development photosensitive solder resist ink and preparation method thereof Download PDFInfo
- Publication number
- CN107603329A CN107603329A CN201710840841.7A CN201710840841A CN107603329A CN 107603329 A CN107603329 A CN 107603329A CN 201710840841 A CN201710840841 A CN 201710840841A CN 107603329 A CN107603329 A CN 107603329A
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- CN
- China
- Prior art keywords
- solder resist
- resist ink
- block
- liquid development
- photosensitive solder
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 28
- 239000007788 liquid Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000000178 monomer Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- 239000003086 colorant Substances 0.000 claims abstract description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000945 filler Substances 0.000 claims abstract description 9
- 239000013530 defoamer Substances 0.000 claims abstract description 7
- -1 silicon acrylic ester Chemical class 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 229920001400 block copolymer Polymers 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 claims description 3
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 claims description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical class C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000009288 screen filtration Methods 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims 1
- 235000010290 biphenyl Nutrition 0.000 claims 1
- 239000004305 biphenyl Substances 0.000 claims 1
- 238000012661 block copolymerization Methods 0.000 claims 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical group CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 235000021050 feed intake Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Natural products CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- WKGDNXBDNLZSKC-UHFFFAOYSA-N oxido(phenyl)phosphanium Chemical group O=[PH2]c1ccccc1 WKGDNXBDNLZSKC-UHFFFAOYSA-N 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Materials For Photolithography (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Develop photosensitive solder resist ink the invention discloses a kind of liquid, include the components of following parts by weight：Photosensitive resin 45 65, activated monomer 10 20, light trigger 28, colorant 15, filler 12 18, defoamer 12, solvent 10 15, described photosensitive resin includes amphipathic nature block polymer, bisphenol A type epoxy resin, organic silicon acrylic ester, and the mass ratio of three is 1：（0.8‑1.5）：（0.1‑0.5）.
Description
Technical field
The present invention relates to solder mask technical field, more particularly to a kind of liquid development photosensitive solder resist ink and its preparation side
Method.
Background technology
Welding resistance is the particularly important procedure of PCB manufacturing process, and its main function is that solder mask is passed through into silk
The mode of print is covered on the line pattern etched, the position that need not enter units welding is all covered, to prevent
In element welding process because of upper tin and caused by electrical communication the problem of forming short circuit.With the further densifications of PCB and nothing
The appearance of lead welding procedure, a large amount of of higher requirement, especially flexible PCB are it is also proposed for the performance of solder mask
Use.Solder mask plays moistureproof, anti-pollution, anticorrosion in the solder mask that circuit board surface is formed and prevents welding from causing splicing
Deng effect, this requires solder mask to have excellent heat resistance, chemical resistance, pliability.Traditional epoxies soldering-resistance layer solidification
Higher fragility is shown afterwards, it is impossible to suitable for flexible board.
The content of the invention
The defects of present invention is in order to make up prior art, there is provided a kind of liquid development photosensitive solder resist ink and its preparation side
Method.
The present invention is achieved by the following technical solutions：
A kind of liquid development photosensitive solder resist ink, include the component of following parts by weight：Photosensitive resin 45-65, activated monomer 10-
20th, light trigger 2-8, colorant 1-5, filler 12-18, defoamer 1-2, solvent 10-15, described photosensitive resin include amphipathic
Block copolymer, bisphenol A type epoxy resin, organic silicon acrylic ester, the mass ratio of three is 1：（0.8-1.5）：（0.1-
0.5）.
Described activated monomer is acrylic monomers.
Described light trigger is TMDPO, 2- hydroxy-2-methyl -1- phenyl
It is acetone, double（2,4,6- trimethylbenzoyls）Phenyl phosphine oxide, 1- hydroxy cyclohexyl phenylketones and 2,4,6- trimethylbenzene first
One kind in acyl group ethoxyl phenenyl phosphine oxide.
Described colorant is according to 1 by pigment and fluorocarbon surfactant：（0.01-0.1）Weight than it is blended, grind
Grind, be scattered obtained.
Described filler is mesoporous silicon oxide.
Described amphipathic nature block polymer is poly-（Isoprene-block-oxirane）Block copolymer, gather（Ethene
Propylene-block-oxirane）Block copolymer, gather（Butadiene-block-oxirane）Block copolymer, gather（Isoprene-
Block-oxirane）One kind in block copolymer.
A kind of preparation method of described liquid development photosensitive solder resist ink, is comprised the following steps that：By photosensitive resin, activity
Monomer and light trigger feed intake in passage, are stirred with high speed dispersor under 500-600r/min rotating speeds to after 65-80 DEG C,
Stop stirring, add filler, colorant, solvent, defoamer, open stirring, mixing speed 300-500r/min, be stirred
Resulting material is ground to fineness less than 5 μm with 260 or 405 type three-roll grinders after even, finally uses the screen pack of 325-600 mesh again
Filtering, produce described liquid development photosensitive solder resist ink.
Solder mask prepared by the present invention is with amphipathic nature block polymer modified bisphenol A type epoxy resin and organosilicon third
Then olefin(e) acid ester compound reacts, the resinite of synthesis has good photonasty and heat concurrently with activated monomer again as photosensitive resin
Curability, amphipathic group therein make itself and mesoporous silicon oxide filler, the pigment through fluorocarbon surfactant modified processing
There is more preferable compatibility and adhesion Deng composition, solve that traditional solder mask fragility is big, has the problems such as aberration, it is final to be made
Ink uniform color it is stable, pliability is good, heat-resisting, antiseptic power is strong, hydrophobic oleophobic, is especially suitable for high performance flexible circuit
Plate.
Embodiment
A kind of liquid development photosensitive solder resist ink, include the component of following parts by weight：Photosensitive resin 45, acrylic monomers
10th, TMDPO 2, colorant 1, mesoporous silicon oxide 12, defoamer 1, solvent 10, it is described
Photosensitive resin include it is poly-（Isoprene block oxirane）Block copolymer, bisphenol A type epoxy resin, acid-organosilicon crylic acid
Ester, the mass ratio of three is 1：0.8：0.1.
A kind of described liquid development photosensitive solder resist ink, described light trigger is 2,4,6 trimethylbenzoyls two
It is phenyl phosphine oxide, 2 hyd roxymethyl phenyl acetone, double（2,4,6 trimethylbenzoyls）Phenyl phosphine oxide, 1 hydroxy-cyclohexyl benzene
Ketone and 2, one kind in 4,6 trimethylbenzoyl ethoxyl phenenyl phosphine oxides.
Described colorant is according to 1 by pigment and fluorocarbon surfactant：（0.01）Weight than it is blended, grinding, point
Dissipate obtained.
A kind of preparation method of described liquid development photosensitive solder resist ink, is comprised the following steps that：By photosensitive resin, activity
Monomer and light trigger feed intake in passage, are stirred with high speed dispersor under 500r/min rotating speeds to after 65 DEG C, stop stirring
Mix, add filler, colorant, solvent, defoamer, open stirring, mixing speed 300r/min, be uniformly mixed rear gains
Material is ground to fineness less than 5 μm with 260 type three-roll grinders, finally produces described liquid with the filter screen filtration of 325 mesh again
Develop photosensitive solder resist ink.
Claims (7)
- The photosensitive solder resist ink 1. a kind of liquid is developed, it is characterised in that include the component of following parts by weight：Photosensitive resin 45-65, Activated monomer 10-20, light trigger 2-8, colorant 1-5, filler 12-18, defoamer 1-2, solvent 10-15, described photosensitive tree Fat includes amphipathic nature block polymer, bisphenol A type epoxy resin, organic silicon acrylic ester, and the mass ratio of three is 1：（0.8- 1.5）：（0.1-0.5）.
- 2. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described activated monomer is third Acrylic monomer.
- A kind of 3. liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described light trigger is 2, It is 4,6- trimethyl benzoyl diphenyl base phosphine oxides, 2- hydroxy-2-methyl -1- phenylacetones, double（2,4,6- trimethylbenzoyls Base）Phenyl phosphine oxide, 1- hydroxy cyclohexyl phenylketones and 2, one in 4,6- trimethylbenzoyl ethoxyl phenenyl phosphine oxides Kind.
- 4. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described colorant is by pigment With fluorocarbon surfactant according to 1：（0.01-0.1）Weight than blended, grinding, scattered obtained.
- 5. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described filler is mesoporous two Silica.
- 6. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described amphipathic block is total to Polymers is poly-（Isoprene-block-oxirane）Block copolymer, gather（Ethylene, propylene-block-oxirane）Block copolymerization Thing, gather（Butadiene-block-oxirane）Block copolymer, gather（Isoprene-block-oxirane）In block copolymer One kind.
- A kind of 7. preparation method of liquid development photosensitive solder resist ink as described in claim 1-6, it is characterised in that specific step It is rapid as follows：Photosensitive resin, activated monomer and light trigger are fed intake in passage, with high speed dispersor in 500-600r/min Stirred under rotating speed to after 65-80 DEG C, stop stirring, add filler, colorant, solvent, defoamer, opened and stir, mixing speed is 300-500r/min, it is uniformly mixed rear resulting material and is ground to fineness less than 5 μm with 260 or 405 type three-roll grinders, most Use the filter screen filtration of 325-600 mesh again afterwards, produce described liquid development photosensitive solder resist ink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710840841.7A CN107603329A (en) | 2017-09-18 | 2017-09-18 | A kind of liquid development photosensitive solder resist ink and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710840841.7A CN107603329A (en) | 2017-09-18 | 2017-09-18 | A kind of liquid development photosensitive solder resist ink and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107603329A true CN107603329A (en) | 2018-01-19 |
Family
ID=61060729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710840841.7A Pending CN107603329A (en) | 2017-09-18 | 2017-09-18 | A kind of liquid development photosensitive solder resist ink and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107603329A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113549369A (en) * | 2021-07-05 | 2021-10-26 | 江苏海田电子材料有限公司 | Crack-resistant solder-resist hole plugging ink and preparation method thereof |
| CN116694128A (en) * | 2023-06-28 | 2023-09-05 | 鹤山市炎墨科技有限公司 | Anti-welding ink containing block copolymer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003005126A1 (en) * | 2001-07-04 | 2003-01-16 | Showa Denko K.K. | Resist curable resin composition and cured article thereof |
| CN101027358A (en) * | 2004-04-02 | 2007-08-29 | 陶氏环球技术公司 | Amphiphilic Block Copolymers - Toughened Thermoset Resins |
| CN101717599A (en) * | 2009-12-27 | 2010-06-02 | 浙江桐乡新东方油墨有限公司 | Liquid photosensitive solder resist ink and preparation method thereof |
| CN105418864A (en) * | 2015-12-21 | 2016-03-23 | 海门埃夫科纳化学有限公司 | Amphiphilic block copolymer, preparation method therefor and application of amphiphilic block copolymer |
-
2017
- 2017-09-18 CN CN201710840841.7A patent/CN107603329A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003005126A1 (en) * | 2001-07-04 | 2003-01-16 | Showa Denko K.K. | Resist curable resin composition and cured article thereof |
| CN101027358A (en) * | 2004-04-02 | 2007-08-29 | 陶氏环球技术公司 | Amphiphilic Block Copolymers - Toughened Thermoset Resins |
| CN101717599A (en) * | 2009-12-27 | 2010-06-02 | 浙江桐乡新东方油墨有限公司 | Liquid photosensitive solder resist ink and preparation method thereof |
| CN105418864A (en) * | 2015-12-21 | 2016-03-23 | 海门埃夫科纳化学有限公司 | Amphiphilic block copolymer, preparation method therefor and application of amphiphilic block copolymer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113549369A (en) * | 2021-07-05 | 2021-10-26 | 江苏海田电子材料有限公司 | Crack-resistant solder-resist hole plugging ink and preparation method thereof |
| CN116694128A (en) * | 2023-06-28 | 2023-09-05 | 鹤山市炎墨科技有限公司 | Anti-welding ink containing block copolymer and preparation method thereof |
| CN116694128B (en) * | 2023-06-28 | 2023-11-24 | 鹤山市炎墨科技有限公司 | Anti-welding ink containing block copolymer and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180119 |
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| RJ01 | Rejection of invention patent application after publication |