CN107169160A - A kind of computational methods of heterojunction bipolar transistor non-electron specialities - Google Patents

Abstract

The invention discloses a calculation method for the non-ionization energy loss of a heterojunction bipolar transistor, which relates to the technical field of environmental engineering. The SRIM software is used to simulate the process of space radiation particles incident on an InP/InGaAs HBT device, and the non-ionization energy loss in the device is accurately calculated. The relationship between the incident particle energy and the energy of the incident particles is used to predict the performance degradation of the device in the space irradiation environment, and only a few tests are required to determine the characteristic curve, which saves test funds and costs.

Description

A Calculation Method of Non-ionization Energy Loss in Heterojunction Bipolar Transistor

technical field

The invention relates to the technical field of environmental engineering, in particular to a calculation method for the non-ionization energy loss of a heterojunction bipolar transistor.

Background technique

The indium phosphide heterojunction bipolar transistor InP HBT has the advantages of ultra-high frequency characteristics, large power density and good linearity. In the communication system, the radio frequency front-end circuit plays the role of mutual conversion between wireless signals and digital signals, thus forming a transceiver system, including low-noise amplifiers, power amplifiers, voltage-controlled oscillators, mixers and other circuits, and in these circuits In terms of implementation, InP-based devices and circuits have advantages that other devices do not have. Therefore, InP-based devices and circuits will be widely used in military fields such as satellites and radars in the future.

InP devices and circuits widely used in the aerospace field will be bombarded by high-energy protons, neutrons, alpha particles, heavy ions and other particles in severe space radiation environments, resulting in various radiation effects, such as total dose effects, displacement Effects and single event effects, these radiation effects cause instantaneous or permanent changes in the performance of devices or circuits, and then cause functional failure of the entire spacecraft electrical system. Therefore, before the device is damaged, we need to have a certain ability to predict the device characteristics.

Non-ionizing energy loss (NIEL) is used to describe the displacement damage of the device after space radiation particles are incident on the device. Research on NIEL can give people a deeper understanding of the radiation damage process, and it can also be used to predict the performance of devices or circuits in radiation environments, so it has been more widely used.

However, considering only the contribution of displacement damage to NIEL is limiting. Through research, it is found that the non-ionization energy loss NIEL not only causes the displacement of atoms, but also generates a large number of phonons, that is, lattice vibration, which will promote the displacement of atoms and increase the NIEL. We know that there is a linear relationship between the device damage factor and NIEL, and the device performance can be predicted by the NIEL value. Therefore, solving for an accurate NIEL value is crucial.

Contents of the invention

The embodiment of the present invention provides a calculation method for the non-ionization energy loss of the heterojunction bipolar transistor, which can solve the problems existing in the prior art.

A calculation method for non-ionization energy loss of a heterojunction bipolar transistor, the method comprising the following steps:

Use SRIM software to simulate the process of InP/InGaAs HBT devices entering the device under the space radiation environment, and use the simulation results to calculate the relationship between the non-ionization energy loss in the device and the energy of incident particles;

The non-ionization energy loss includes the energy consumed to generate vacancies and the energy consumed to generate phonons. The energy M ₁ required to generate a vacancy is shown in formula (1):

In formula (1), T _d refers to the atomic displacement threshold energy in the irradiated device;

The energy M ₂ required to generate a phonon is shown in formula (2):

In formula (2), h is Planck's constant, c is the speed of light, λ is the Raman spectrum length, and A is a coefficient;

Using the simulation results to calculate the relationship curve between the non-ionization energy loss NIEL and the incident depth D, see formula (3):

In formula (3), IONV(D) and RECV(D) refer to the number of vacancies generated within a unit distance of an incident atom and a recoil atom, respectively, and IONP(D) and RECP(D) refer to an incident atom and The number of phonons generated within a recoil atomic unit distance, ρ is the atomic density of the material;

Solve the relationship curve of the incident particle energy E with the incident depth D, see formulas (4)-(7):

F(D)＝10000{M ₁ [IONV(D)+RECV(D)]+M ₂ [IONP(D)+RECP(D)]}+10[IONI(D)+RECI(D)]

(4)

In formula (4), F(D) refers to the energy required to generate vacancies, phonons and ionize atoms per unit length, IONI(D) and RECI(D) represent an incident atom and a recoil atom unit distance The ionization energy loss within;

E _c (D) = B × F (D) (5)

In formula (5), E _c (D) refers to the atomic energy accumulated and consumed on the length interval B;

In formula (6), E _t (D) refers to the total energy that needs to be consumed when the incident particle reaches a certain depth;

E(D)＝E ₀ -E _t (D) (7)

In formula ( ₇ ), E0 is the initial energy of the incident particle, and E(D) refers to the energy of the particle on the incident path;

Combining the relationship curve between the non-ionization energy loss NIEL and the incident depth D obtained in formula (3), and the relationship curve between the incident particle energy E and the incident depth D obtained in formula (7), the non-ionization energy loss NIEL is finally obtained The relationship curve with the incident particle energy E.

The invention uses SRIM software to simulate the process of space radiation particles incident on InP/InGaAs HBT devices, accurately calculates the relationship between the non-ionization energy loss in the device and the energy of incident particles, and predicts the performance degradation of the device in the space radiation environment, and only a few The characteristic curve can be determined by the test, which saves the test funds and costs.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

Figure 1 is the SRIM simulation results: (a) the relationship between the ionization, phonon and vacancy generation rate introduced by incident protons and the incident depth D, (b) the ionization, phonon and vacancy production rate introduced by recoil atoms and the incident depth D relationship diagram;

Figure 2 is a graph of the relationship between the non-ionization energy loss NIEL and the incident depth D;

Figure 3 is a graph showing the relationship between the cumulative energy consumption E _c and the incident depth D within a unit interval;

Fig. 4 is a relationship diagram between the total cumulative consumed energy E _t and the incident depth D;

Fig. 5 is a relation diagram of incident proton energy E and incident depth D;

Fig. 6 is a relation diagram of non-ionization energy loss NIEL and incident proton energy E;

Fig. 7 is a relationship diagram between NIEL and incident proton energy E considering and not considering the influence of phonons;

Fig. 8 is a graph comparing the relationship between NIEL and incident particle energy E for different particle incidents.

detailed description

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

A method for calculating the non-ionization energy loss of a heterojunction bipolar transistor provided in an embodiment of the present invention, the method includes the following steps:

The first step is to use SRIM software to simulate the process of InP/InGaAs HBT devices entering the device under the space radiation environment, and use the simulation results to calculate the relationship between the non-ionization energy loss in the device and the energy of incident particles;

In the second step, the non-ionization energy loss mainly includes the energy consumed by generating vacancies and the energy consumed by generating phonons. The energy M ₁ required to create a vacancy is shown in formula (1):

In formula (1), the unit of M ₁ is keV/vacancy, T _d refers to the atomic displacement threshold energy in the irradiated device, and the unit is eV;

The energy M ₂ required to generate a phonon is shown in formula (2):

In formula ( ₂ ), the unit of M is keV/phonon, h is Planck's constant, c is the speed of light, λ is the Raman spectrum length, and A is a coefficient;

The third step is to use the simulation results to calculate the relationship curve between the non-ionization energy loss NIEL and the incident depth D, see formula (3):

In formula (3), the unit of NIEL is MeV cm ² /g, IONV(D) and RECV(D) refer to the number of vacancies generated within a unit distance of an incident atom and a recoil atom, respectively, IONP(D) and RECP(D) refers to the number of phonons generated within a unit distance of an incident atom and a recoil atom respectively, all of which are SRIM simulation results; ρ is the atomic density of the material;

The fourth step is to solve the relationship curve of the incident particle energy E with the incident depth D, see formulas (4)-(7):

F(D)＝10000{M ₁ [IONV(D)+RECV(D)]+M ₂ [IONP(D)+RECP(D)]}+10[IONI(D)+RECI(D)]

(4)

In formula (4), F(D) refers to the energy required to generate vacancies, phonons, and ionize atoms per unit length, and the unit is keV/μm. IONI(D) and RECI(D) represent an incident atom and ionization energy loss over a recoil atomic unit distance;

E _c (D) = B × F (D) (5)

In formula (5), E _c (D) refers to the atomic energy accumulated and consumed over the length interval B, where the unit of B is μm;

In formula (6), E _t (D) refers to the total energy that needs to be consumed when the incident particle reaches a certain depth;

E(D)＝E ₀ -E _t (D) (7)

In formula ( ₇ ), E0 is the initial energy of the incident particle, and E(D) refers to the energy of the particle on the incident path;

In the fifth step, combining the relationship curve between the non-ionization energy loss NIEL and the incident depth D obtained in formula (3), and the relationship curve between the incident particle energy E and the incident depth D obtained in formula (7), it can finally be obtained The relationship between non-ionization energy loss NIEL and incident particle energy E. The damage coefficient of the device has a linear relationship with NIEL, therefore, the performance of the device can be predicted by solving NIEL.

The present invention will be further described below in conjunction with a specific example.

1. Taking protons as an example, set the initial energy E ₀ =10MeV, and use SRIM software to simulate the process of proton incident into the InP/InGaAs HBT device in the space radiation environment, and obtain the ionization, phonon and vacancy generation rate and incident proton introduced by the incident proton. The relationship between depth, as shown in Figure 1(a), and the relationship between the ionization, phonon and vacancy generation rate introduced by recoil atoms and the incident depth, as shown in Figure 1(b);

2. Combining the simulation results to calculate the relationship between the non-ionization energy loss and the incident depth in the device;

1) First, the energy required to generate a vacancy and the energy required to generate a phonon can be obtained from formula (1) and formula (2);

2) Combining the simulation results and formula (3), the relationship between the non-ionization energy loss in the device and the incident depth can be obtained, as shown in FIG. 2 . It is found that the deeper the incident depth, the greater the non-ionization energy loss value. That is to say, the position where the particle incident stops will be the most damaged area.

3. Solve the relationship curve of incident particle energy E and incident depth D;

1) Solve the energy F(D) required to generate vacancies, phonons and ionize atoms per unit length, the unit is keV/μm, see formula (4);

2) F(D) is known, and the atomic energy E _c (D) accumulated and consumed on the length interval B is calculated, and the unit of B is μm, see formula (5), as shown in Figure 3;

3) When the incident proton reaches a certain depth, the total energy E _t (D) that needs to be consumed, see formula (6), as shown in Figure 4;

4) When the incident proton reaches a certain depth, the energy E(D) possessed, see formula (7), as shown in Figure 5, it is found that with the continuous increase of the incident depth, the proton energy gradually decreases until it is zero, Finally stops inside the device;

4. Combining the relationship curve between the non-ionization energy loss NIEL and the incident depth D obtained above, and the relationship between the incident particle energy E and the incident depth D, the relationship curve between the non-ionization energy loss NIEL and the incident particle energy E can be finally obtained, such as As shown in Figure 6, it is found that the lower the proton energy, the greater the damage to the device, mainly because the low-energy protons are incident into the device, the speed is slower, the interaction time with the device is longer, the active area is larger, and the deposition The energy is more, therefore, the damage produced is larger. At the same time, the results of calculating NIEL by analytical method are given. It can be seen from the comparison that the NIEL calculation method using SRIM software simulation considering phonon effect described in this patent is correct. The damage coefficient of the device has a linear relationship with NIEL, therefore, the performance of the device can be predicted by solving NIEL;

5. Based on the above method, compare the relationship between NIEL and incident proton energy with and without considering phonon interaction, as shown in Figure 7. It is found that the NIEL values considering phonons increase, indicating that phonons promote the displacement of atoms, which increases the value of non-ionization energy damage;

6. The above method is applicable to other space radiation particles, such as carbon, helium and other particles. As shown in Figure 8, it is found that the greater the atomic mass, the greater the non-ionization energy loss NIEL. The main reason is that the greater the atomic mass, the greater the collision with the target atoms, and the deposition of more energy, thus causing greater damage.

Those skilled in the art should understand that the embodiments of the present invention may be provided as methods, systems, or computer program products. Accordingly, the present invention can take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.

The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It should be understood that each procedure and/or block in the flowchart and/or block diagram, and a combination of procedures and/or blocks in the flowchart and/or block diagram can be realized by computer program instructions. These computer program instructions may be provided to a general purpose computer, special purpose computer, embedded processor, or processor of other programmable data processing equipment to produce a machine such that the instructions executed by the processor of the computer or other programmable data processing equipment produce a An apparatus for realizing the functions specified in one or more procedures of the flowchart and/or one or more blocks of the block diagram.

These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing apparatus to operate in a specific manner, such that the instructions stored in the computer-readable memory produce an article of manufacture comprising instruction means, the instructions The device realizes the function specified in one or more procedures of the flowchart and/or one or more blocks of the block diagram.

These computer program instructions can also be loaded onto a computer or other programmable data processing device, causing a series of operational steps to be performed on the computer or other programmable device to produce a computer-implemented process, thereby The instructions provide steps for implementing the functions specified in the flow chart or blocks of the flowchart and/or the block or blocks of the block diagrams.

While preferred embodiments of the invention have been described, additional changes and modifications to these embodiments can be made by those skilled in the art once the basic inventive concept is appreciated. Therefore, it is intended that the appended claims be construed to cover the preferred embodiment as well as all changes and modifications which fall within the scope of the invention.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims (1)

1. a kind of computational methods of heterojunction bipolar transistor non-electron specialities, it is characterised in that this method includes following Step：

The process of InP/InGaAs HBT devices particle incidence device under space radiation environment, and profit are simulated using SRIM softwares With the non-electron specialities and the relation of projectile energy in simulation result calculating device；

Non-electron specialities produce a sky including producing the energy and produce the energy that phonon is consumed that room is consumed Energy M needed for position₁See formula (1)：

<mrow> <msub> <mi>M</mi> <mn>1</mn> </msub> <mo>=</mo> <mfrac> <mn>1</mn> <mn>1000</mn> </mfrac> <mrow> <mo>(</mo> <mfrac> <msub> <mi>T</mi> <mi>d</mi> </msub> <mn>0.4</mn> </mfrac> <mo>+</mo> <mn>2</mn> <mo>)</mo> </mrow> <mo>-</mo> <mo>-</mo> <mo>-</mo> <mrow> <mo>(</mo> <mn>1</mn> <mo>)</mo> </mrow> </mrow>

In formula (1), T_dRefer to be illuminated discomposition threshold energy in device；

Produce the energy M required for a phonon₂See formula (2)：

<mrow> <msub> <mi>M</mi> <mn>2</mn> </msub> <mo>=</mo> <mfrac> <mn>1</mn> <mn>1000</mn> </mfrac> <mfrac> <mn>1</mn> <mrow> <mn>1.6</mn> <mo>&amp;times;</mo> <msup> <mn>10</mn> <mrow> <mo>-</mo> <mn>19</mn> </mrow> </msup> </mrow> </mfrac> <mfrac> <mrow> <mi>h</mi> <mi>c</mi> </mrow> <mi>&amp;lambda;</mi> </mfrac> <mo>&amp;times;</mo> <mi>A</mi> <mo>-</mo> <mo>-</mo> <mo>-</mo> <mrow> <mo>(</mo> <mn>2</mn> <mo>)</mo> </mrow> </mrow>

In formula (2), h is Planck's constant, and c is the light velocity, and λ is Raman spectrum length, and A is coefficient；

Non-electron specialities NIEL and incident depth D relation curve are calculated using simulation result, formula (3) is seen：

<mrow> <mi>N</mi> <mi>I</mi> <mi>E</mi> <mi>L</mi> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>=</mo> <mo>{</mo> <msub> <mi>M</mi> <mn>1</mn> </msub> <mo>&amp;lsqb;</mo> <mi>I</mi> <mi>O</mi> <mi>N</mi> <mi>V</mi> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>+</mo> <mi>R</mi> <mi>E</mi> <mi>C</mi> <mi>V</mi> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>&amp;rsqb;</mo> <mo>+</mo> <msub> <mi>M</mi> <mn>2</mn> </msub> <mo>&amp;lsqb;</mo> <mi>I</mi> <mi>O</mi> <mi>N</mi> <mi>P</mi> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>+</mo> <mi>R</mi> <mi>E</mi> <mi>C</mi> <mi>P</mi> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>&amp;rsqb;</mo> <mo>}</mo> <mfrac> <msup> <mn>10</mn> <mn>5</mn> </msup> <mi>&amp;rho;</mi> </mfrac> <mo>-</mo> <mo>-</mo> <mo>-</mo> <mrow> <mo>(</mo> <mn>3</mn> <mo>)</mo> </mrow> </mrow>

In formula (3), IONV (D) and RECV (D) refer respectively to produce in an incident atoms and a recoil atom unit distance Raw room number, IONP (D) and RECP (D) refer respectively to produce in an incident atoms and a recoil atom unit distance Raw phonon number, ρ is the atomic density of material；

Projectile energy E is solved with incident depth D variation relation curve, formula (4)-(7) are seen：

F (D)=10000 { M₁[IONV(D)+RECV(D)]+M₂[IONP(D)+RECP(D)]}+10[IONI(D)+RECI(D)]

(4)

In formula (4), F (D) refers to the energy that room, phonon are produced in unit length and is caused required for atom ionization, IONI (D) and RECI (D) represent respectively in an incident atoms and a recoil atom unit distance ionizing energy loss；

E_c(D)=B × F (D) (5)

In formula (5), E_c(D) nuclear energy that consumption is accumulated on the B of length interval is referred to；

<mrow> <msub> <mi>E</mi> <mi>t</mi> </msub> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>=</mo> <munderover> <mo>&amp;Sigma;</mo> <mn>0</mn> <mi>D</mi> </munderover> <msub> <mi>E</mi> <mi>c</mi> </msub> <mrow> <mo>(</mo> <mi>D</mi> <mo>)</mo> </mrow> <mo>-</mo> <mo>-</mo> <mo>-</mo> <mrow> <mo>(</mo> <mn>6</mn> <mo>)</mo> </mrow> </mrow>

In formula (6), E_t(D) refer to when incoming particle reaches a certain depth, it is necessary to the gross energy of consumption；

E (D)=E₀-E_t(D) (7)

In formula (7), E₀For the primary power of incoming particle, E (D) refers to the energy that particle has on incident path；

The non-electron specialities NIEL obtained in convolution (3) and incident depth D relation curve, and obtained in formula (7) Projectile energy E and incident depth D variation relation curve, finally draw non-electron specialities NIEL and incoming particle The relation curve of ENERGY E.