CN106801223B - A double heat source vertical atmosphere reaction furnace - Google Patents
A double heat source vertical atmosphere reaction furnace Download PDFInfo
- Publication number
- CN106801223B CN106801223B CN201710062952.XA CN201710062952A CN106801223B CN 106801223 B CN106801223 B CN 106801223B CN 201710062952 A CN201710062952 A CN 201710062952A CN 106801223 B CN106801223 B CN 106801223B
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- Prior art keywords
- heating
- furnace
- substrate table
- support tube
- controller
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention discloses a kind of double heat source vertical-type atmosphere reacting furnaces, mainly be made of controller, rotary heating base station, burner hearth three parts, purposes be heat substrate table under required reaction temperature with heating bottom stage can sublimator material generate atmosphere occur chemical reaction generate needed for film.The present invention, to placement, it is smaller to which upwards are easier to react with the substrate contact on heating substrate table to heat the gas density that material is generated by thermal decomposition on bottom stage using heating substrate table and heating bottom stage top and bottom;And the heating substrate table where substrate is can to adjust the speed rotation, and the film for reacting preparation can be more uniform, while can also adjust and heat at a distance from bottom stage;The present invention can adjust separately the material sublimation temperature T1 of heating bottom stage and the underlayer temperature T2 of heating substrate table, so that the heating process of atmosphere reactive deposition does not influence between each other using double heat source heating.
Description
Technical field
The present invention be it is a kind of using bottom-heated can sublimator material come the substrate for generating and being heated on atmosphere and substrate table that distils
Film carries out chemical reaction at a certain temperature and generates the instrument for growing required film, belongs to processing film instrument field.
Background technique
The currently used instrument that film is prepared in relation to atmosphere or vapor phase method, there are mainly two types of: 1. to be passed through two kinds of gases anti-
Should after condense and be deposited in a substrate (CVD);2. being passed through a kind of gas into tube furnace to be reacted with the substrate in pipe.But
It is that the instrument of the first seed type is only applicable to two kinds of gas reaction condensation depositions, is not particularly suited for solid film substrate specific
At a temperature of the situation of film is directly prepared with atmosphere chemical reaction;Although and the instrument of second of type is applicable in, and is not suitable for
In the material atmosphere easily condensed, because (can not be condensed in tracheae or glass tube walls) in access tube, and it is put into internal direct
High temperature distillation can make material sublimation temperature identical as substrate reaction temperature again and more difficult completion is tested, and static in substrate reaction
It places, is unfavorable for preparing uniform film.Therefore, profession is lacked in research and production and is directed to solid substrate in material gas of easily sublimating
The instrument of reaction growth high-quality thin film in atmosphere.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides a kind of double heat source vertical-type atmosphere
Reacting furnace, the film quality which obtains is good, reaction is uniform.
Technical solution: to achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of double heat source vertical-type atmosphere reacting furnaces, including controller (1), rotary heating base station (2) and burner hearth (3),
The burner hearth (3) includes furnace body open at one end (35), bell (36), pressure gage (30), gas-guide tube (31), vacuum pump, heating
Bottom stage (32), the heating bottom stage (32) are set in furnace body (35), and pressure gage (30) is used to measure the pressure in furnace body (35)
By force, the measuring probe of the pressure gage (30) is set in furnace body (35), and the pressure gage (30) is connect with controller (1),
The furnace body (35) is connected to by gas-guide tube (31) with vacuum pump;The rotary heating base station (2) includes stepper motor (4), shakes
Hand (5), otating drive rod (6), threaded rod (7), connecting rod (10), fixed ring (8), support tube (81), heating substrate table (14),
The bell (36) is mounted on the open end of furnace body (35), and one end and bell (36) of the threaded rod (7) are rotatablely connected, and institute
State the other end of threaded rod (7) with shake the hand (5) be fixedly connected, described connecting rod (10) one end passes through screwed ring and threaded rod (7)
Connection, the other end is fixedly connected with fixed ring (8), and the fixed ring (8) is fixedly mounted on support tube (81);The stepping
Motor (4) is fixedly mounted on one end of support tube (81), and the other end of support tube (81) passes through bell (36) and heating serves as a contrast
Bottom stage (14) rotation connection, and the support tube (81) and bell (36) are rotatablely connected;The otating drive rod (6) is set to branch
In stay tube (81), and the otating drive rod (6) one end is connect with stepper motor (4) shaft, the other end and heating substrate table
(14) it is fixedly connected;What heating substrate table (14) and support tube (81) were away from each other is provided with fixed metal clips (12) on one side
With fixed screw holes (13), the fixed metal clips (12) is mounted on heating substrate table (14) by fixed screw holes (13)
On;The heating substrate table (14) is oppositely arranged with heating bottom stage (32).
Preferred: the heating bottom stage (32) is fixedly mounted on furnace body (35) bottom surface by fixed screw one (33), and institute
It states and is provided on furnace body (35) burner hearth power outlet (34), the heating bottom stage (32) and burner hearth power outlet (34) are connected.
It is preferred: it is provided with fixing bearing one (15) on the bell (36), and the threaded rod (7) and fixing bearing one
(15) inner ring is fixedly connected, so that threaded rod (7) is rotatablely connected by fixing bearing one (15) and bell (36);The bell
(36) through-hole is provided on, and the support tube (81) passes through through-hole, and is interference fitted between support tube (81) and through-hole.
It is preferred: fixing bearing two (16), the support tube (81) and fixation are provided on the heating substrate table (14)
The inner ring of bearing two (16) is fixedly connected, so that support tube (81) passes through fixing bearing two (16) and heating substrate table (14) rotation
Connection.
It is preferred: to be provided with scale bar (9) on the threaded rod (7).
It is preferred: to further include bellows (11), bellows limitation flange, the bellows limitation flange is fixedly mounted on branch
On stay tube (81), and the bellows (11) is set between bellows limitation flange and bell (36).
Preferred: the controller (1) includes single-chip microcontroller, heating substrate table real time temperature display screen (17), heating substrate
Platform real-time target temperature (18), heating substrate table control button (19), heating bottom stage real time temperature display screen (20), heating bottom stage
Real-time target temperature (21), heating bottom stage control button (22), stepper motor adjust the speed knob (23), controller "ON" button
(24), controller "Off" button (25), the heating substrate table real time temperature display screen (17), heating substrate table real-time target temperature
Spend (18), heating substrate table control button (19), heating bottom stage real time temperature display screen (20), heating bottom stage real-time target temperature
(21), bottom stage control button (22) are heated, stepper motor adjusts the speed knob (23), controller "ON" button (24), controller "Off"
Button (25) is connect with single-chip microcontroller.
The present invention compared with prior art, has the advantages that
(1) using by material be placed in instrument internal heating sublimation generate the material atmosphere can make certain distillations after produce
Raw gas material of easily sublimating avoids before sublimating effectively contacting with reaction substrate, these materials is allowed to be able to use vapor phase method.
(2) present invention use will heat vertical-type depositional mode of the substrate table with heating bottom stage top and bottom to placement, according to
Physical thermodynamics are regular, and the gas density that material is generated by thermal decomposition on heating bottom stage is smaller to which upwards are easier to and are added
Substrate contact reaction on hot substrate table, can constantly make on newly distilling the gas that floats at once with the film lining on heating substrate table
Bottom is reacted, and film reaction mass is helped to improve.
(3) in atmosphere reaction process, heating substrate table can at the uniform velocity be rotated, and reaction can be made uniformly to be conducive to
React obtained film quality and uniformity.
(4) the substrate disc computer heating control being separated from each other using double heat sources, compared to the double heat source vapor phase methods of common tube furnace,
Can allow atmosphere reactive deposition when material sublimation temperature and substrate reaction temperature it is mutually indepedent, be independent of each other.
(5) according to the distillation severe degree of material under set temperature by rotary heating base station shake the hand adjust heating
Substrate table changes the concentration for the material sublimation atmosphere that substrate is contacted at a distance from heating bottom stage and avoids the nothing of sublimating of gas
Method is effectively contacted with substrate.Simultaneously when heating substrate table or heating bottom stage temperature is higher, it is next big that distance between the two can be increased
Amplitude weakens mutual influence, improves film reaction mass.
(6) for different size of substrate, fixed screw holes mounting elastic sheet different on heating substrate table can be selected
Substrate is fixed, has expanded the versatility of instrument.
Detailed description of the invention
Fig. 1: the whole exemplary diagram of double heat source vertical-type atmosphere reacting furnaces;
Fig. 2: rotary heating abutment structure schematic diagram;
Fig. 3: rotary heating abutment structure schematic diagram;
Fig. 4: controller positive structure schematic;
Fig. 5: controller structure schematic diagram;
Fig. 6: chamber structure schematic diagram;
The label declaration of each component in schematic diagram:
1 controller, 2 rotary heating base station, 3 burner hearth, 4 stepper motor 5 is shaken the hand
6 otating drive rod, 7 threaded rod, 8 fixed ring, 9 scale bar
10 connecting rod, 11 bellows 12 fixes metal clips
13 fixed screw holes 14 heat 15 fixing bearing of substrate table, one 16 fixing bearing two
17 heating substrate table real time temperature display screens 18 heat substrate table real-time target temperature
19 heating substrate table control buttons 20 heat bottom stage real time temperature display screen
21 heating bottom stage real-time target temperature 22 heat bottom stage control button
23 stepper motors adjust the speed 24 controller "ON" button of knob, 25 controller "Off" button
26 burner hearth wiring-connecting socket, 27 power outlet
28 29 power supply for step-by-step motor line of rotary heating base station wiring-connecting socket, 30 pressure gage
31 gas-guide tubes 32 heat 33 fixed screw of bottom stage, 34 burner hearth power outlet.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these examples are merely to illustrate this
It invents rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention various
The modification of equivalent form falls within the application range as defined in the appended claims.
A kind of double heat source vertical-type atmosphere reacting furnaces, purposes be heating substrate table under required reaction temperature with heating bottom
Platform can sublimator material generate atmosphere occur chemical reaction generate needed for film.As shown in Figure 1, 2, including controller 1, rotation add
Hot radical platform 2 and burner hearth 3, as shown in fig. 6, the burner hearth 3 includes furnace body 35 open at one end, bell 36, pressure gage 30, air guide
Pipe 31, vacuum pump, heating bottom stage 32, the heating bottom stage 32 is set in furnace body 35, and pressure gage 30 is for measuring furnace body 35
The measuring probe of interior pressure, the pressure gage 30 is set in furnace body 35, and the pressure gage 30 is connect with controller 1, institute
Furnace body 35 is stated to be connected to by gas-guide tube 31 with vacuum pump;The heating bottom stage 32 is fixedly mounted on furnace body by fixed screw 1
35 bottom surfaces, and burner hearth power outlet 34 is provided on the furnace body 35, the heating bottom stage 32 is connected with burner hearth power outlet 34.
As shown in Fig. 2, the rotary heating base station 2 includes stepper motor 4,5, otating drive rod 6 of shaking the hand, threaded rod 7, connects
Extension bar 10, fixed ring 8, support tube 81, heating substrate table 14, the bell 36 are mounted on the open end of furnace body 35, the screw thread
One end of bar 7 and bell 36 are rotatablely connected, and the other end of the threaded rod 75 is fixedly connected with shaking the hand, the connecting rod 10 1
End is connect by screwed ring with threaded rod 7, and the other end is fixedly connected with fixed ring 8, and the fixed ring 8 is fixedly mounted on support
On pipe 81;The stepper motor 4 is fixedly mounted on one end of support tube 81, and the other end of support tube 81 pass through bell 36 with
It heats substrate table 14 to be rotatablely connected, and the support tube 81 and bell 36 are rotatablely connected;It is provided with through-hole on the bell 36, and
The support tube 81 passes through through-hole, and is interference fitted between support tube 81 and through-hole.The otating drive rod 6 is set to support tube
In 81, and 6 one end of the otating drive rod is connect with 4 shaft of stepper motor, and the other end is fixedly connected with heating substrate table 14;Institute
It states heating substrate table 14 and what support tube 81 was away from each other is provided with fixed metal clips 12 and fixed screw holes 13 on one side, it is described solid
Determine metal clips 12 to be mounted on heating substrate table 14 by fixed screw holes 13;The heating substrate table 14 and heating bottom stage 32
It is oppositely arranged.Scale bar 9 is provided on the threaded rod 7.It further include bellows 11, bellows limitation flange, the bellows
Limitation flange is fixedly mounted on support tube 81, and the bellows 11 is set between bellows limitation flange and bell 36.
As shown in figure 3, fixing bearing 1 is provided on the bell 36, and the threaded rod 7 and fixing bearing 1
Inner ring be fixedly connected so that threaded rod 7 is rotatablely connected by fixing bearing 1 and bell 36;On the heating substrate table 14
It is provided with fixing bearing 2 16, the support tube 81 is fixedly connected with the inner ring of fixing bearing 2 16, so that support tube 81 passes through
Fixing bearing 2 16 and heating substrate table 14 are rotatablely connected.
As shown in Figure 4,5, the controller 1 includes single-chip microcontroller, heating substrate table real time temperature display screen 17, heating substrate
Platform real-time target temperature 18, heating substrate table control button 19, heating bottom stage real time temperature display screen 20, the heating real-time mesh of bottom stage
Mark temperature 21, heating bottom stage control button 22, stepper motor speed regulation knob 23, controller "ON" button 24, controller "Off" are pressed
Button 25, the heating substrate table real time temperature display screen 17, heating substrate table real-time target temperature 18, heating substrate table control are pressed
Key 19, heating bottom stage real time temperature display screen 20, heating bottom stage real-time target temperature 21, heating bottom stage control button 22, stepping
Electric machine speed regulation knob 23, controller "ON" button 24, controller "Off" button 25 are connect with single-chip microcontroller.In the machine of controller 1
Burner hearth wiring-connecting socket 26, power outlet 27, rotary heating base station wiring-connecting socket 28, stepper motor are additionally provided on cabinet
Power supply line 29.
The principle of the invention is as follows:
5 are shaken the hand by rotation, rotates threaded rod 7, and threaded rod 7 rotates, and drives screwed ring, and then mobile by connecting rod 10
Fixed ring 8 since fixed ring 8 is fixedly connected with support tube 81, and then promotes or reduces heating substrate table 14, heats substrate table
14 spacing for raising and reducing and then adjusting between heating substrate table 14 and heating bottom stage 32.In addition, at work, Ke Yitong
The revolving speed that stepper motor speed regulation knob 23 controls stepper motor is crossed, the rotation of stepper motor is passed to by otating drive rod 6 to be added
Hot substrate table 14, so that heating substrate table 14 rotates.
(1) present invention using heating heating bottom stage 31 on place can sublimator material come distil generate atmosphere with heating lining
The substrate film heated on bottom stage 14 carries out the film needed for reaction generates at a certain temperature.
(2) this hair using heating substrate table 14 and heats 32 top and bottom of bottom stage to the vertical-type depositional mode of placement.
(3) present invention come rotary heating substrate table 14 and can adjust revolving speed by the speed regulation knob 23 on controller 1.
(4) present invention can by rotation 2 heating base stations on shake the hand 5 come adjust heating substrate table 14 and heating bottom stage 32
Distance.
(5) using double heat source separated heatings, heating substrate table 14 is separated from each other the present invention with bottom stage 32 is heated, and can be with
Adjust separately temperature.
(6) the fixation metal clips 12 for being used to fix substrate on the heating substrate table 14 of rotary heating base station 2 can root
Different fixed screw holes 13 are selected to be installed according to substrate size.
Case
It prepares vapor phase method methylamine bustamentite film: the lead iodide FTO glass substrate film prepared is placed on rotary heating
On the heating substrate table 14 of base station 2, lead iodide FTO glass substrate is fixed with fixed metal clips 12, then by methylpyridinium iodide ammonium
Powder is placed on the heating bottom stage 32 of 3 bottom of burner hearth, after instrument is installed, is adjusted and is shaken the hand 5 on rotary heating base station 2
The distance between heating substrate table 14 and heating bottom stage 31 are adjusted, the vacuum pump for opening connection gas-guide tube 31 is evacuated to pressure
Meter 30 to 10-1Pa removes air, and adjusts stepper motor speed regulation 24 rotary heating substrate table 14 of knob to make to react more uniform.
Controller heating bottom stage control button 22 on operation controller 1 is heated to 200 DEG C of reaction temperature simultaneously for substrate table 14 is heated
20min is kept the temperature, then operates heating substrate table control button 19 on controller 1 and will heat bottom stage 32 and be heated to 150 DEG C and make methyl
Ammonium iodide powder starts distillation and generates methylpyridinium iodide ammonium atmosphere, the lead iodide in methylpyridinium iodide ammonium atmosphere and heating substrate table 14
FTO glass substrate film issues biochemical reaction 20min at 200 DEG C and generates final product methylamine bustamentite FTO substrate film, waits
When cooling closes to an end, the heating of heating bottom stage 32 is closed, instrument is opened after cooling and takes out the film that vapor phase method prepares.
In conclusion the present invention using heating substrate table and heating bottom stage top and bottom to placement, heat on bottom stage material by
It is smaller to which upwards are easier to react with the substrate contact on heating substrate table to thermally decompose the gas density generated;And it serves as a contrast
Heating substrate table where bottom is can to adjust the speed rotation, react preparation film can be more uniform, while can also adjust with
Heat the distance of bottom stage;The present invention uses double heat sources heating, can adjust separately the material sublimation temperature T1 of heating bottom stage and add
The underlayer temperature T2 of hot substrate table, so that the heating process of atmosphere reactive deposition does not influence between each other.
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062952.XA CN106801223B (en) | 2017-02-01 | 2017-02-01 | A double heat source vertical atmosphere reaction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062952.XA CN106801223B (en) | 2017-02-01 | 2017-02-01 | A double heat source vertical atmosphere reaction furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106801223A CN106801223A (en) | 2017-06-06 |
| CN106801223B true CN106801223B (en) | 2019-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710062952.XA Expired - Fee Related CN106801223B (en) | 2017-02-01 | 2017-02-01 | A double heat source vertical atmosphere reaction furnace |
Country Status (1)
| Country | Link |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289711B (en) * | 2020-10-23 | 2024-04-26 | 西北工业大学 | Low temperature substrate heating stage for growing semiconductor thin film and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0704554A1 (en) * | 1994-09-30 | 1996-04-03 | Shin-Etsu Handotai Company Limited | Wafer supporting boat |
| CN201158704Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院沈阳科学仪器研制中心有限公司 | Substrate warming frame for vacuum plating |
| CN101512041A (en) * | 2005-12-02 | 2009-08-19 | 超导技术公司 | High-throughput deposition system for oxide thin film growth by reactive coevaportation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6514879B2 (en) * | 1999-12-17 | 2003-02-04 | Intel Corporation | Method and apparatus for dry/catalytic-wet steam oxidation of silicon |
| JP5730496B2 (en) * | 2009-05-01 | 2015-06-10 | 株式会社日立国際電気 | Heat treatment apparatus, semiconductor device manufacturing method, and substrate processing method |
-
2017
- 2017-02-01 CN CN201710062952.XA patent/CN106801223B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0704554A1 (en) * | 1994-09-30 | 1996-04-03 | Shin-Etsu Handotai Company Limited | Wafer supporting boat |
| CN101512041A (en) * | 2005-12-02 | 2009-08-19 | 超导技术公司 | High-throughput deposition system for oxide thin film growth by reactive coevaportation |
| CN201158704Y (en) * | 2008-01-11 | 2008-12-03 | 中国科学院沈阳科学仪器研制中心有限公司 | Substrate warming frame for vacuum plating |
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| CN106801223A (en) | 2017-06-06 |
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Granted publication date: 20190409 |