CN106169530A - A kind of LED chip structure in band sidewall reflecting layer - Google Patents

Abstract

The invention discloses an LED chip structure with a side wall reflective layer. The side wall reflective layer arranged between the luminescent layer and the horizontal reflective layer and at the edge of the horizontal reflective layer can be used without using a new LED chip with higher luminous efficiency. In the case of luminescent materials, the reflection efficiency of the light source is greatly improved, thereby increasing the luminous brightness of the light source, and higher luminous brightness can be obtained without increasing the power supply of the LED chip, which has the effect of saving energy.

Description

A kind of LED chip structure with side wall reflective layer

technical field

The invention relates to an LED chip structure with a side wall reflective layer, which is especially suitable for LED chips with high brightness requirements.

Background technique

At present, the general LED chip on the market is only equipped with a reflective layer in the horizontal direction, and the reflection efficiency is not high. If you need to increase the luminous brightness of the light source, you must replace it with a luminescent material with higher luminous efficiency, or use a device that increases the power supply. The method enables the LED chip to have higher luminance, but this will cause increased energy consumption, which does not meet the requirement of energy saving.

Contents of the invention

In order to solve the above problems, the object of the present invention is to provide a LED chip structure with a sidewall reflective layer, the sidewall reflective layer disposed between the light-emitting layer and the horizontal reflective layer and at the edge of the horizontal reflective layer can be used without using a new In the case of a luminescent material with higher luminous efficiency, the reflection efficiency of the light source is greatly improved, so that the luminous brightness of the light source can be increased, and a higher luminous brightness can be obtained without increasing the power supply of the LED chip, which can save energy. Effect.

The technical scheme that the present invention solves its problem adopts is:

An LED chip structure with a sidewall reflective layer, comprising a substrate, a luminescent layer disposed in the substrate, a horizontal reflective layer disposed under the luminescent layer for reflecting bright light emitted by the luminescent layer, and a horizontal reflective layer disposed at the edge of the horizontal reflective layer The side wall reflective layer for reflecting the bright light emitted by the light emitting layer and the chip pins arranged under the reflective layer. The side wall reflective layer can further improve the reflective efficiency of the light source on the basis of the reflective efficiency of the original horizontal reflective layer, so that a higher luminous brightness of the light source can be obtained without changing the use environment of the LED chip, which has the effect of saving energy.

Further, the sidewall reflective layer forms an obtuse angle with the horizontal reflective layer. The side wall reflective layer and the horizontal reflective layer forming an obtuse angle can greatly increase the reflective area, thus greatly reflect the bright light emitted by the light source, and improve the reflective efficiency.

Preferably, the sidewall reflective layer and the horizontal reflective layer are reflective layers made of one of DBR material, Ag material and AI material. DBR material has a high reflectivity and has no problem of absorbing light source, so it is very suitable for the reflective layer of LED chip; Ag material is a kind of metal material, which is the best metal for reflection in the visible light range, and has great Good reflectivity is suitable for the reflective layer of LED chips; AI material is a metal material with relatively good reflectivity, which is also suitable for the reflective layer of LED chips.

The beneficial effect of the present invention is: an LED chip structure with a side wall reflective layer, the side wall reflective layer can greatly improve the reflection efficiency of the light source without using a new luminous material with higher luminous efficiency, Therefore, the luminous brightness of the light source can be increased, and higher luminous brightness can be obtained without increasing the power supply of the LED chip, thereby achieving the effect of energy saving.

Description of drawings

The present invention will be further described below in conjunction with accompanying drawing and example.

FIG. 1 is a schematic diagram of the structure of an LED chip with a sidewall reflective layer according to the present invention.

detailed description

Referring to Fig. 1, a LED chip structure with a sidewall reflective layer of the present invention includes a substrate 1, a luminescent layer 2 arranged in the substrate 1, and is arranged below the luminescent layer 2 for reflecting light emitted by the luminescent layer 2. The horizontal reflective layer 3 for bright light, the side wall reflective layer 4 arranged at the edge of the horizontal reflective layer 3 for reflecting the bright light emitted by the light emitting layer 2 and the chip pins 5 arranged under the reflective layer. The side wall reflective layer 4 can further improve the reflective efficiency of the light source on the basis of the reflective efficiency of the original horizontal reflective layer 3, so that a higher luminous brightness of the light source can be obtained without changing the use environment of the LED chip, thereby achieving an energy-saving effect .

Wherein, the side wall reflective layer 4 forms an obtuse angle with the horizontal reflective layer 3 . The side wall reflective layer 4 and the horizontal reflective layer 3 forming an obtuse angle can greatly increase the reflective area, thus greatly reflect the bright light emitted by the light source, and improve the reflective efficiency.

Wherein, the sidewall reflective layer 4 and the horizontal reflective layer 3 are reflective layers made of one of DBR material, Ag material and AI material. DBR material has a high reflectivity and has no problem of absorbing light source, so it is very suitable for the reflective layer of LED chip; Ag material is a kind of metal material, which is the best metal for reflection in the visible light range, and has great Good reflectivity is suitable for the reflective layer of LED chips; AI material is a metal material with relatively good reflectivity, which is also suitable for the reflective layer of LED chips.

The structure of an LED chip with a side wall reflective layer adopted in the present invention can be applied to various LED chips that need to improve luminous brightness or LED chips that have energy-saving effects, without using new luminescent materials with higher luminous efficiency, There is also no need to increase the power supply of the LED chip to obtain higher luminous brightness and achieve an energy-saving effect.

The above is a specific description of the preferred implementation of the present invention, but the present invention is not limited to the above-mentioned implementation, and those skilled in the art can also make various equivalent deformations or replacements without violating the spirit of the present invention. Equivalent modifications or replacements are all within the scope defined by the claims of the present application.

Claims (3)

1. the LED chip structure in a band sidewall reflecting layer, it is characterised in that: include substrate (1), be arranged at described substrate (1) In luminescent layer (2), be arranged at the level of light that described luminescent layer (2) lower section is sent by described luminescent layer (2) for reflection Reflecting layer (3), it is arranged at described flat reflector (3) edge for the sidewall of light that reflection is sent by described luminescent layer (2) Reflecting layer (4) and be arranged at the chip pin (5) below reflecting layer.

The LED chip structure in a kind of band sidewall reflecting layer the most according to claim 1, it is characterised in that: described sidewall is anti- Penetrate layer (4) and form obtuse angle with described flat reflector (3).

The LED chip structure in a kind of band sidewall reflecting layer the most according to claim 1, it is characterised in that: described sidewall is anti- Penetrating layer (4) with described flat reflector (3) is by a kind of reflecting layer constituted in DBR material, Ag material and AI material.