CN105819703A - Preparation method of capacitive touch screen electro-conductive glass with shadow eliminating function - Google Patents
Preparation method of capacitive touch screen electro-conductive glass with shadow eliminating function Download PDFInfo
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- CN105819703A CN105819703A CN201610154830.9A CN201610154830A CN105819703A CN 105819703 A CN105819703 A CN 105819703A CN 201610154830 A CN201610154830 A CN 201610154830A CN 105819703 A CN105819703 A CN 105819703A
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- 239000011521 glass Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 26
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims abstract description 3
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000007688 edging Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 238000003763 carbonization Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000011056 performance test Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract 6
- 238000005406 washing Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000227 grinding Methods 0.000 abstract 1
- 238000011068 loading method Methods 0.000 abstract 1
- 238000010422 painting Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 10
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A preparation method of capacitive touch screen electro-conductive glass with a shadow eliminating function comprises the following steps: selecting electronic level glass, cutting glass substrates, automatically grinding glass edges, washing, inspecting grinded edges, washing, examining, loading glass sheets on a machine, heating, painting a silicon dioxide baffle membrane, an indium tin oxide membrane, a tantalum pentoxide membrane, and a silicon carbide shadow eliminating membrane on the glass sheets by a magnetron sputtering coating machine, cooling, unloading glass sheets from the machine, and testing the performance of the indium tin oxide membrane. The prepared electro-conductive glass has the advantages of low square resistance, good sheet resistance uniformity, high light transmittance, and short etching time. Two surfaces of the glass are coated, and multiple membranes are continuously plated on the glass. The electro-conducive glass has a shadow eliminating function. The production efficiency is improved, and the cost is reduced. The prepared electro-conductive glass can be widely applied to high end intelligent capacitive touch screens.
Description
Technical field
The present invention relates to electro-conductive glass technical field, particularly relate to the preparation method of a kind of capacitive touch screen electro-conductive glass with the shadow function that disappears.
Background technology
Touch screen is a kind of special sensor, can be widely applied on the interactive display of almost all of needs such as mobile phone, MP3, MP4, digital camera, game machine, personal electric navigator, household electrical appliances, information query system.Touch screen has unified sense of touch and vision, makes man-machine interaction more directly perceived, portable, opens the revolution of a man-machine interaction mode.Meanwhile, it also opens new space for the personalized designs of electronic product, is the personalized spring breeze of electronic product.At present, the competition situation of various touch screen technologies is: small-medium size field resistance-type and condenser type account for leading, and large scale field multiple technologies are also deposited.But from the point of view of long-run development trend, owing to there is congenital defect in resistive touch screen on service life and light transmittance, following is inevitable by other technical substitution, and capacitive touch screen is development trend.Simple glass is insulant, by its plated surface last layer conducting film, (tin indium oxide, IndiumTinOxide are called for short: ITO), it can be made to possess electric conductivity, here it is electro-conductive glass.Tin indium oxide (Indium-TinOxide) transparent conducting film glass, many by ITO electropane production line, in the power house environment of high purification, utilize plane magnetic control technology, ultra-thin glass sputters tin indium oxide conductive film coating the high-tech product obtained through the high temperature anneal.The main raw material(s) of capacitive touch screen is the electro-conductive glass of high performance multilayer film double-sided coating, and current electro-conductive glass can not meet requirement, or resistance is undesirable, or the uniformity of resistance is bad, or light transmittance is the lowest etc., does not have the shadow function that disappears simultaneously；Therefore, it is necessary to the electro-conductive glass to high-performance with the multilayer film double-sided coating of the shadow function that disappears is studied, the electro-conductive glass of high-performance multilayer film double-sided coating is development trend, has wide market prospect.
Summary of the invention
The object of the present invention is achieved like this:
It is an object of the invention to provide the preparation method of a kind of capacitive touch screen electro-conductive glass with the shadow function that disappears, mainly solve capacitance touch screen in prior art and cannot take into account disappear shadow and the effect of sheet resistance value of tin indium oxide, and the problem that production efficiency is low.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, the steps include: to use magnetron sputtering coater, utilize E-glass, silicon dioxide target, tin indium oxide target material, tantalum target and carborundum target are raw material, the selection of E-glass, glass substrate cuts, the automatic edging of glass, clean, edging is checked, clean, inspection, main frame upper slice, heating, utilize magnetron sputtering applying silicon oxide barrier film, utilize magnetron sputtering indium oxide tin film, magnetron sputtering tantalum pentoxide film and carborundum is utilized to disappear shadow film, cooling, main frame unloading piece, indium oxide tin film performance test.
Further, before described glass substrate deposits layer of silicon dioxide film, first described glass substrate is cleaned, dry.
Specifically, the technological parameter utilizing magnetron sputtering applying silicon oxide barrier film is: coating temperature is: 200～320 DEG C, and coating chamber transmission beat is 100～120 seconds, use 3 silicon targets, oxygen flow is 90～130Sccm, and argon flow amount is 180～220Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa, and the sputtering power of described silicon target is 1200～1350 watts；The thickness of described silicon dioxide film is 20～60nm.
Further, the technological parameter utilizing magnetron sputtering indium oxide tin film is: coating temperature scope is 280～320 DEG C；Coating chamber transmission beat is 90～120 seconds, uses 2 tin indium oxide targets, and oxygen flow is 90～130Sccm, and argon flow amount is 180～220Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa, and the sputtering power of described tin indium oxide target is 8000～8600 watts.The thickness of described indium oxide tin film is 15～120nm.
Further, the technological parameter utilizing magnetron sputtering tantalum pentoxide film is: coating temperature is: 250～280 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 included a tantalum target, sputtering power is 1300 watts～1800 watts, and oxygen flow is 100～150Sccm, argon flow amount is 200～250Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa.
Further, described tantalum pentoxide film thickness is 10～30nm.
Further, the disappear technological parameter of shadow film of magnetron sputtering carborundum is utilized to be: using magnetron sputtering coater to carry out, coating temperature is: 200～250 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 carbonization silicon targets, sputtering power is 1200 watts～1600 watts, and nitrogen flow is 90～130Sccm, argon flow amount is 200～250Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa.Described silicon carbide film thickness is 30～60nm.
The present invention compared with prior art, has the advantage that
1, prepared electro-conductive glass has following good performance: sheet resistance is 60～100 Ω/, and transmitance is more than or equal to 90%, and etch period is less than or equal to 30 seconds, and resistance per square uniformity is good.
2, the performance of the electro-conductive glass of this patent is readily adjusted, with the requirement of satisfied series high-end Intelligent Capacitive formula touch screen.
3, the electro-conductive glass of this patent has the shadow function that well disappears.
4, utilize magnetron sputtering coater applying silicon oxide barrier film, utilize magnetron sputtering coater plating indium oxide tin film, to utilize the disappear process of shadow film of magnetron sputtering coater plating tantalum pentoxide film and carborundum be to be carried out continuously in magnetron sputtering coater, carry out plated film at double-sided glass simultaneously, it is greatly improved production efficiency, reduces cost.
5, the electro-conductive glass of this patent is simple for production, accords with the demands of the market, and production cost is low, and competitiveness is strong.
Specific embodiment
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.
The preparation method of a kind of capacitive touch screen electro-conductive glass with the shadow function that disappears that the present invention provides is: use magnetron sputtering method, utilize E-glass, silicon dioxide target, tin indium oxide target material, niobium pentaoxide and carborundum target are raw material, the selection of E-glass, glass substrate cuts, the automatic edging of glass, clean, edging is checked, clean, inspection, main frame upper slice, heating, utilize magnetron sputtering applying silicon oxide barrier film, utilize magnetron sputtering indium oxide tin film, magnetron sputtering tantalum pentoxide and carborundum is utilized to disappear shadow film, cooling, main frame unloading piece, special surface processes, indium oxide tin film performance test.So, by by silicon dioxide film, indium oxide tin film, silicon carbide film successively arranged superposed on glass film plates, thus ensureing on the basis of indium oxide tin film sheet resistance value, realize preferably disappearing shadow effect, simple for production, meet market demands, improve the competitiveness of product in market.
Specifically, before deposition on glass layer of silicon dioxide film, first by glass through processing (selection of E-glass, glass substrate cutting, the automatic edging of glass, cleaning, edging are checked, clean, checked).Treated glass is placed in magnetron sputtering coater, employing magnetron sputtering coater is carried out, coating temperature is set to: 200～320 DEG C, coating chamber transmission beat is 100～120 seconds, use 3 silicon targets, oxygen flow is 90～130Sccm, and argon flow amount is 180～220Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa, and the sputtering power of described silicon target is 1200-1350 watt.In the silicon dioxide film that deposition on glass a layer thickness is 20～60nm, as bottom.Preferentially, the thickness of deposition silicon dioxide film is 20nm.Silicon dioxide film can stop the sodium ion in glass to spread, and can increase the adhesive force between lower one film layer and glass.
Then, by magnetron sputtering deposition indium oxide layer stannum film on above-mentioned silicon dioxide film, as conductive film layer, the circuit for showing image so can be made on indium oxide tin film, as the basis of capacitance touch screen.Employing magnetron sputtering coater is carried out, and coating temperature scope is set to 280～320 DEG C；Coating chamber transmission beat is 90～120 seconds, uses 2 tin indium oxide targets, and oxygen flow is 90～130Sccm, and argon flow amount is 180～220Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa, and the sputtering power of described tin indium oxide target is 8000～8600 watts.Deposition the thickness of indium oxide tin film be 15～120nm.Preferentially, the thickness of depositing indium tin oxide film is 30nm.Indium oxide tin film is deposited on above silicon dioxide film.
Then, plating last layer tantalum pentoxide film on indium oxide tin film, as the primary action of the shadow that disappears, use magnetron sputtering coater to carry out, arranging coating temperature is: 250～280 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 included a tantalum target, sputtering power is 1300 watts～1800 watts, and oxygen flow is 100～150Sccm, argon flow amount is 200～250Sccm, and vacuum is between 3.0 × 10-1Pa～4.5 × 10-1Pa, and total gas pressure is 0.4～0.45Pa.The tantalum pentoxide film thickness of deposition is 10～30nm.Preferentially, the thickness of deposition tantalum pentoxide film is 20nm.
Finally, in order to improve the shadow function that disappears further, plating and set on one layer of silicon carbide film on tantalum pentoxide film, also serve as the shadow layer that disappears, so, the etched line on indium oxide tin film seems the most inconspicuous, and visual effect is more preferable.Employing magnetron sputtering coater is carried out, and coating temperature is: 200～250 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 carbonization silicon targets, sputtering power is 1200 watts～1600 watts, and nitrogen flow is 90～130Sccm, argon flow amount is 200～250Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa.The carborundum thickness of deposition is 30～60nm.Preferentially, the thickness of depositing silicon silicon fiml is 40nm.
Therefore, performance and the feature of the high-end Intelligent Capacitive formula touch screen electro-conductive glass produced are as follows: sheet resistance is 60～100 Ω/, and transmitance is more than or equal to 90%, and etch period is less than or equal to 30 seconds, and resistance per square uniformity is good.The performance of the electro-conductive glass of this patent is readily adjusted, with the requirement of satisfied series high-end Intelligent Capacitive formula touch screen.The electro-conductive glass of this patent has the shadow function that well disappears.Plating multilayer film is to be carried out continuously in magnetron sputter, and double-sided coating is greatly improved production efficiency, reduces cost, and the electro-conductive glass of this patent is simple for production, accords with the demands of the market, and competitiveness is strong.
The foregoing is only the preferred embodiment of patent of the present invention, not in order to limit the present invention, all any amendment, equivalent and improvement etc. made within the spirit and principles in the present invention, should be included within the scope of the present invention.
Claims (7)
1. the preparation method of a capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterised in that: electro-conductive glass used is adopted and is the most progressively prepared:
First step, carries out the selection of E-glass, glass substrate cutting, the automatic edging of glass, cleaning, edging are checked, clean, check, main frame upper slice, heat；
Second step, utilizes magnetron sputtering coater applying silicon oxide barrier film；Then, make indium oxide tin film be deposited on the surface of silicon dioxide film again with magnetron sputtering coater plating indium oxide tin film, so can make the circuit for showing image on indium oxide tin film, as the basis of capacitance touch screen；Further, magnetron sputtering plating is used to plate last layer tantalum pentoxide film on indium oxide tin film, as the primary action of the shadow that disappears；Further, for improving the shadow function that disappears, plating and set on one layer of silicon carbide film, also serve as the shadow layer that disappears on tantalum pentoxide film, the etched line being beneficial on indium oxide tin film seems inconspicuous, and visual effect is more preferable；
Third step, carry out cooling down, main frame unloading piece, indium oxide tin film performance test.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterized in that: described electro-conductive glass has the property that sheet resistance is 60～100 Ω/, transmitance is more than or equal to 90%, etch period is less than or equal to 30 seconds, and surface resistance uniformity is good.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterised in that: described electro-conductive glass has a tantalum pentoxide and carborundum disappears shadow film, and there is the shadow function that disappears.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterised in that: described electro-conductive glass is double-sided coating.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterized in that: described indium oxide tin film is when plating sets one layer of tantalum pentoxide film, employing magnetron sputtering coater is carried out, coating temperature is: 250～280 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 included a tantalum target, sputtering power is 1300 watts～1800 watts, and oxygen flow is 100～150Sccm, argon flow amount is 200～250Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterized in that: described indium oxide tin film is when plating sets one layer of silicon carbide film, employing magnetron sputtering coater is carried out, coating temperature is: 200～250 DEG C, and coating chamber transmission beat is 100～150 seconds；Using 2 carbonization silicon targets, sputtering power is 1200 watts～1600 watts, and nitrogen flow is 90～130Sccm, argon flow amount is 200～250Sccm, and vacuum is 3.0 × 10-1Pa～4.5 × 10-1Between Pa, total gas pressure is 0.4～0.45Pa.
A kind of preparation method of the capacitive touch screen electro-conductive glass with the shadow function that disappears, it is characterised in that: described magnetron sputtering coater applying silicon oxide barrier film, utilize magnetron sputtering coater plating indium oxide tin film, to utilize the disappear process of shadow film of magnetron sputtering coater plating tantalum pentoxide film and carborundum be to be carried out continuously in magnetron sputtering coater.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106293228A (en) * | 2016-08-09 | 2017-01-04 | 洛阳康耀电子有限公司 | A kind of processing method of the two-sided shadow touch screen electro-conductive glass that disappears |
| CN106865998A (en) * | 2017-03-22 | 2017-06-20 | 宜昌南玻显示器件有限公司 | Disappear shadow type OLED electro-conductive glass and preparation method thereof |
| CN114196927A (en) * | 2021-11-25 | 2022-03-18 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
| CN115745422A (en) * | 2022-11-03 | 2023-03-07 | 佛山市晶玻科技有限公司 | Full-automatic curved surface conductive glass production device and process |
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| CN102830851A (en) * | 2012-09-25 | 2012-12-19 | 信利半导体有限公司 | Touch screen and manufacturing method thereof |
| CN103226212A (en) * | 2013-04-11 | 2013-07-31 | 红安华州光电科技有限公司 | Vanishing transparent conductive film |
| CN103699286A (en) * | 2013-12-31 | 2014-04-02 | 深圳力合光电传感股份有限公司 | Blanking manufacturing method of capacitance touch screen |
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2016
- 2016-03-17 CN CN201610154830.9A patent/CN105819703A/en active Pending
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|---|---|---|---|---|
| CN102830851A (en) * | 2012-09-25 | 2012-12-19 | 信利半导体有限公司 | Touch screen and manufacturing method thereof |
| CN103226212A (en) * | 2013-04-11 | 2013-07-31 | 红安华州光电科技有限公司 | Vanishing transparent conductive film |
| CN103699286A (en) * | 2013-12-31 | 2014-04-02 | 深圳力合光电传感股份有限公司 | Blanking manufacturing method of capacitance touch screen |
Cited By (7)
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