[go: up one dir, main page]

CN105814664B - 反应诱导单元、基板处理装置及薄膜沉积方法 - Google Patents

反应诱导单元、基板处理装置及薄膜沉积方法 Download PDF

Info

Publication number
CN105814664B
CN105814664B CN201480061659.6A CN201480061659A CN105814664B CN 105814664 B CN105814664 B CN 105814664B CN 201480061659 A CN201480061659 A CN 201480061659A CN 105814664 B CN105814664 B CN 105814664B
Authority
CN
China
Prior art keywords
substrate
flow path
presoma
gas
secondary flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480061659.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN105814664A (zh
Inventor
方弘柱
申东和
金玟锡
高在菊
金光洙
金淑基
白成圭
罗锺勋
崔长元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kook Je Electric Korea Co Ltd
Original Assignee
Kook Je Electric Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130140117A external-priority patent/KR101523299B1/ko
Application filed by Kook Je Electric Korea Co Ltd filed Critical Kook Je Electric Korea Co Ltd
Publication of CN105814664A publication Critical patent/CN105814664A/zh
Application granted granted Critical
Publication of CN105814664B publication Critical patent/CN105814664B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10P72/7621—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H10P72/0432—
    • H10P72/7618—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201480061659.6A 2013-11-18 2014-09-24 反应诱导单元、基板处理装置及薄膜沉积方法 Active CN105814664B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020130140117A KR101523299B1 (ko) 2013-11-18 2013-11-18 반응 유도 유닛 및 기판 처리 장치
KR10-2013-0140117 2013-11-18
KR20140027878 2014-03-10
KR10-2014-0027878 2014-03-10
PCT/KR2014/008908 WO2015072661A1 (fr) 2013-11-18 2014-09-24 Unité d'entraînement de réaction, appareil de traitement de substrat, et procédé de dépôt de film mince

Publications (2)

Publication Number Publication Date
CN105814664A CN105814664A (zh) 2016-07-27
CN105814664B true CN105814664B (zh) 2019-05-17

Family

ID=53057572

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480061659.6A Active CN105814664B (zh) 2013-11-18 2014-09-24 反应诱导单元、基板处理装置及薄膜沉积方法

Country Status (3)

Country Link
JP (1) JP6290406B2 (fr)
CN (1) CN105814664B (fr)
WO (1) WO2015072661A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ631063A (en) 2013-11-08 2015-10-30 Ppg Ind Ohio Inc Texture analysis of a coated surface using cross-normalization
US10910243B2 (en) * 2018-08-31 2021-02-02 Applied Materials, Inc. Thermal management system
KR102170451B1 (ko) * 2020-01-22 2020-10-28 (주)이큐테크플러스 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1551302A (zh) * 2003-05-13 2004-12-01 ���������ƴ���ʽ���� 上部电极和等离子体处理装置
CN101236891A (zh) * 2007-01-19 2008-08-06 东京毅力科创株式会社 等离子体处理装置
CN102576661A (zh) * 2009-08-31 2012-07-11 圆益Ips股份有限公司 气体喷射装置和使用其的基底处理设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100667676B1 (ko) * 2004-10-15 2007-01-12 세메스 주식회사 플라즈마 처리 장치의 가스분사장치
KR100931331B1 (ko) * 2007-08-24 2009-12-15 주식회사 케이씨텍 박막 증착장치의 분사유닛
KR100901118B1 (ko) * 2007-08-24 2009-06-08 주식회사 케이씨텍 박막 증착장치의 분사유닛
KR101100284B1 (ko) * 2010-06-21 2011-12-30 세메스 주식회사 박막 증착 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1551302A (zh) * 2003-05-13 2004-12-01 ���������ƴ���ʽ���� 上部电极和等离子体处理装置
CN101236891A (zh) * 2007-01-19 2008-08-06 东京毅力科创株式会社 等离子体处理装置
CN102576661A (zh) * 2009-08-31 2012-07-11 圆益Ips股份有限公司 气体喷射装置和使用其的基底处理设备

Also Published As

Publication number Publication date
WO2015072661A1 (fr) 2015-05-21
JP2016538424A (ja) 2016-12-08
JP6290406B2 (ja) 2018-03-07
CN105814664A (zh) 2016-07-27

Similar Documents

Publication Publication Date Title
KR100949914B1 (ko) 원자층 증착 장치
KR101204614B1 (ko) 가스 공급 장치, 성막 장치, 및 성막 방법
KR101248654B1 (ko) 성막 장치
JP5458179B2 (ja) ガス噴射装置及びこれを用いた基板処理装置
CN102953047B (zh) 成膜装置
CN106167895A (zh) 用于改善流动均匀性的具有面板孔的低体积喷头
CN105814664B (zh) 反应诱导单元、基板处理装置及薄膜沉积方法
TW201324663A (zh) 用於改良之沉積均勻性的前驅物分配特性
JP2001254181A (ja) 成膜装置および成膜方法
CN1693540B (zh) 沉积薄膜的方法和具有用于喷洒清洁气体的单独喷射口的薄膜沉积系统
CN101665921A (zh) 成膜装置、基板处理装置及成膜方法
US20160362785A1 (en) Apparatus for manufacturing semiconductor device having a gas mixer
KR101473334B1 (ko) 원자층 증착 장치
KR20150020007A (ko) 화학기상증착장치
JP2012190868A (ja) ２流体ノズル、基板液処理装置、基板液処理方法、及び基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
KR100920324B1 (ko) 박막 증착장치
JP2017069346A (ja) 基板処理方法および基板処理装置
CN105088190A (zh) 成膜装置
TWI821369B (zh) 用於防止高深寬比結構的黏滯效應及／或修補高深寬比結構的蒸氣輸送頭
CN101665919A (zh) 成膜装置、基板处理装置、成膜方法
KR101323125B1 (ko) 반도체 소자 제조용 수직형 확산로의 가스 분사 시스템
KR100901118B1 (ko) 박막 증착장치의 분사유닛
TW201728377A (zh) 晶圓清洗裝置
CN209397259U (zh) 一种用于改善pecvd晶片成膜均匀性的新型喷头
JP2004014953A (ja) 処理装置および処理方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant