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CN104561905B - 一种线性蒸发源 - Google Patents

一种线性蒸发源 Download PDF

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CN104561905B
CN104561905B CN201410831691.XA CN201410831691A CN104561905B CN 104561905 B CN104561905 B CN 104561905B CN 201410831691 A CN201410831691 A CN 201410831691A CN 104561905 B CN104561905 B CN 104561905B
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passage
evaporation source
deposition material
heating chamber
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CN104561905A (zh
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彭兆基
张伸福
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Kunshan Guoxian Photoelectric Co Ltd
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Priority to EP15875109.9A priority patent/EP3241923B1/en
Priority to PCT/CN2015/097995 priority patent/WO2016107431A1/zh
Priority to US15/540,571 priority patent/US20170356079A1/en
Priority to KR1020177018606A priority patent/KR101989260B1/ko
Priority to JP2017534201A priority patent/JP6472524B2/ja
Priority to TW104143846A priority patent/TW201624797A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

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  • Physical Vapour Deposition (AREA)
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Abstract

本发明提供一种线性蒸发源，其包括用于容置蒸镀材料的加热腔、位于该加热腔上方用于混合蒸镀材料蒸汽的混合腔，及用于连通所述加热腔和混合腔的通道；该混合腔一端与所述加热腔通过所述通道导通，另一端设有多个用于喷射所述蒸镀材料蒸汽的喷嘴，该加热腔、该混合腔、该通道及该喷嘴外围分别设有加热器。本发明的线性蒸发源因蒸镀材料的加热和材料蒸汽的混合在两个独立的空间中进行，能够控制蒸镀膜厚度具有更好的均匀性。

Description

一种线性蒸发源
技术领域
本发明有关一种蒸发源，特别是指一种能保证蒸镀膜厚度均匀的线性蒸发源。
背景技术
在OLED（有机发光二极管）制作工艺中，随着蒸镀基板尺寸的变大，为了保证蒸镀膜厚度均匀性，同时兼顾到材料利用率的提升，蒸镀设备使用的蒸发源已由原来的点源（point source）更换为线性源（linear source）。
如图1与图2所示，目前使用的线性源一般由坩埚1和设于坩埚1上方的多个喷嘴2组成，坩埚1与喷嘴2外周缘设有加热丝3，通过对坩埚1进行加热，使其中的蒸镀材料变为蒸汽，在坩埚1内部均匀后蒸汽从喷嘴2喷出至基板上成膜。
目前的线性蒸发源因加热蒸镀材料与蒸汽混合同时在坩埚中进行，蒸汽混合均一化的空间有限，容易出现材料蒸汽还没有来得及均一化就已经从喷嘴喷出，进而导致蒸镀膜厚度均匀性变差。尤其是刚加满材料的坩埚，可用于材料蒸汽均衡压力的空间更为有限，对蒸镀膜厚度均匀性影响更大。且目前的蒸发源的加热丝为分段式加热，加热方式复杂。
发明内容
有鉴于此，本发明的主要目的在于提供一种能使蒸镀膜厚度均匀的线性蒸发源。
为达到上述目的，本发明提供一种线性蒸发源，其包括用于容置蒸镀材料的加热腔、位于所述加热腔上方用于混合蒸镀材料蒸汽的混合腔，及用于连通所述加热腔和混合腔的通道；所述混合腔一端与所述加热腔通过所述通道导通，另一端设有多个用于喷射所述蒸镀材料蒸汽的喷嘴；所述加热腔、混合腔、通道及喷嘴外围分别设有加热器。
所述通道为多个。
多个所述通道均匀排列设置在所述加热腔和混合腔之间。
所述通道内设有能透过所述蒸镀材料蒸汽的中板，所述中板卡固在所述通道内壁。
所述中板上设有多个通孔。
所述中板的边缘为锯齿形状。
所述通道上设有控制流经的所述蒸镀材料蒸汽流通速度与流量的阀门。
所述加热器为均匀环绕在所述加热腔、混合腔、通道或喷嘴外围的加热丝。
所述加热腔、混合腔、通道及喷嘴外围的加热丝为一体成型。
所述加热腔、混合腔、通道及喷嘴外围的加热器为加热片。
本发明的线性蒸发源因蒸镀材料的加热和蒸镀材料蒸汽的混合在两个独立的空间中进行，能够控制蒸镀膜厚度具有更好的均匀性，且设于加热腔、混合腔、通道及喷嘴外围的加热器可同时进行加热，无需分段加热，简化了加热方式。
附图说明
图1为现有技术中线性蒸发源的结构示意图；
图2为图1的侧视图；
图3为本发明线性蒸发源的结构示意图；
图4为图3的侧视图；
图5为本发明线性蒸发源另一实施例的结构示意图；
图6为图5的侧视图。
具体实施方式
为便于对本发明的结构及达到的效果有进一步的了解，现结合附图并举较佳实施例详细说明如下。
如图3与图4所示，本发明的线性蒸发源包括加热腔4、位于加热腔4上方的混合腔5及用于连通加热腔4与混合腔5的通道6，该混合腔5一端与加热腔4通过通道6导通，另一端设有多个喷嘴50，该加热腔4、混合腔5、通道6及喷嘴50外围分别设有加热器7。
本发明的线性蒸发源在对基板进行蒸镀时，将蒸镀材料放置于加热腔4中，加热腔4与混合腔5及通道6及喷嘴50外围的加热器7分别对相对应部分进行加热，蒸镀材料在加热腔4中熔融并蒸发为蒸镀材料蒸汽，或蒸镀材料直接气化为蒸镀材料蒸汽，蒸镀材料蒸汽由通道6进入混合腔5中，由于在混合腔5中只进行蒸镀材料蒸汽的混合，因此蒸镀材料蒸汽可在混合腔5中能够均衡压力，混合均匀后的蒸镀材料蒸汽由喷嘴50喷出可保证在基板上形成厚度均匀的蒸镀膜，以对基板完成蒸镀。本发明中的多个喷嘴50可均匀设于混合腔5上，以便于蒸镀材料蒸汽可均匀由喷嘴50喷出，形成厚度更为均匀的蒸镀膜。
本发明在加热腔4与混合腔5之间的通道6内可设有中板60，该中板60卡固在通道6内壁，该中板60上设有多个通孔，当蒸镀材料在加热腔4中熔融后，中板60可防止未蒸发的熔液喷溅进入混合腔5。同时加热腔4中的蒸镀材料蒸汽在进入混合腔5前遇到中板60，中板60对蒸镀材料蒸汽有一定阻挡作用，因此中板60可对蒸镀材料蒸汽进行初步均匀混合，并在混合腔5中再进行二次均匀混合，可进一步保证基板上形成的蒸镀膜厚度均匀。本发明的中板60边缘也可为锯齿形状，蒸镀材料蒸汽可由中板60与通道6内壁之间的锯齿空隙进入混合腔5，中板60可防止未蒸发的熔液喷溅进入混合腔5，并对蒸镀材料蒸汽进入混合腔5之前进行初步均匀混合。
如图5与图6所示，本发明中加热腔4与混合腔5之间的通道6可为多个，均匀排列于加热腔4与混合腔5之间，各通道6上可分别设有阀门61，通过阀门61可以控制流经各通道6的蒸镀材料蒸汽的流通速度与流量，以便使混合腔5中的蒸镀材料蒸汽更加均一化。例如，在加热腔4 中对应某一通道处的蒸镀材料较多，产生的蒸镀材料蒸汽也多，流经该通道内的蒸镀材料蒸汽速度快、流量大，可通过控制该通道上的阀门控制流经该通道的蒸镀材料蒸汽速度与流量。
本发明中的加热器7可为均匀环绕在加热腔4、混合腔5、通道6及喷嘴50外围的加热丝，因此可对加热腔4中的蒸镀材料及流经通道6、混合腔5与喷嘴50处的蒸镀材料蒸汽进行充分均匀地加热，以便控制基板蒸镀膜厚度的均匀性。本发明中的加热器7也可为加热片，分别对对应的加热腔4、混合腔5、通道6及喷嘴50进行加热，并可根据实际情况调节各加热片的温度。
本发明的线性蒸发源因蒸镀材料的加热和蒸镀材料蒸汽的混合分别在加热腔4与混合腔5两个独立的空间中进行，能够控制蒸镀膜厚度具有更好的均匀性。同时本发明中加热腔4与混合腔5及通道6及喷嘴50外周缘各处的加热丝可为整体的构造，无需分段加热，简化了加热方式。
以上所述，仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。

Claims (9)

1.一种线性蒸发源，其特征在于，其包括用于容置蒸镀材料的加热腔、位于所述加热腔上方用于混合蒸镀材料蒸汽的混合腔，及用于连通所述加热腔和混合腔的通道；所述混合腔一端与所述加热腔通过所述通道导通，另一端设有多个用于喷射所述蒸镀材料蒸汽的喷嘴；所述加热腔、混合腔、通道及喷嘴外围分别设有加热器；所述通道内设有能透过所述蒸镀材料蒸汽的中板，所述中板卡固在所述通道内壁。
2.如权利要求1所述的线性蒸发源，其特征在于，所述通道为多个。
3.如权利要求2所述的线性蒸发源，其特征在于，多个所述通道均匀排列设置在所述加热腔和混合腔之间。
4.如权利要求1所述的线性蒸发源，其特征在于，所述中板上设有多个通孔。
5.如权利要求1所述的线性蒸发源，其特征在于，所述中板的边缘为锯齿形状。
6.如权利要求1至5任一项所述的线性蒸发源，其特征在于，所述通道上设有控制流经的所述蒸镀材料蒸汽流通速度与流量的阀门。
7.如权利要求1所述的线性蒸发源，其特征在于，所述加热器为均匀环绕在所述加热腔、混合腔、通道或喷嘴外围的加热丝。
8.如权利要求7所述的线性蒸发源，其特征在于，所述加热腔、混合腔、通道及喷嘴外围的加热丝为一体成型。
9.如权利要求1所述的线性蒸发源，其特征在于，所述加热腔、混合腔、通道及喷嘴外围的加热器为加热片。
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CN201410831691.XA CN104561905B (zh) 2014-12-29 2014-12-29 一种线性蒸发源
EP15875109.9A EP3241923B1 (en) 2014-12-29 2015-12-21 Linear evaporation source
PCT/CN2015/097995 WO2016107431A1 (zh) 2014-12-29 2015-12-21 一种线性蒸发源
US15/540,571 US20170356079A1 (en) 2014-12-29 2015-12-21 Linear evaporation source
KR1020177018606A KR101989260B1 (ko) 2014-12-29 2015-12-21 선형 증발소스
JP2017534201A JP6472524B2 (ja) 2014-12-29 2015-12-21 線形蒸発源
TW104143846A TW201624797A (zh) 2014-12-29 2015-12-25 線性蒸發源

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CN104561905B (zh) * 2014-12-29 2017-07-14 昆山国显光电有限公司 一种线性蒸发源
CN104762601A (zh) * 2015-04-30 2015-07-08 京东方科技集团股份有限公司 一种蒸发源、蒸镀装置、蒸镀方法
CN105483620B (zh) * 2015-11-27 2018-03-30 京东方科技集团股份有限公司 喷嘴部件、蒸镀装置及制作有机发光二极管器件的方法
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