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CN104080034A - 具有增大后腔的mems装置 - Google Patents

具有增大后腔的mems装置 Download PDF

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Publication number
CN104080034A
CN104080034A CN201410191389.2A CN201410191389A CN104080034A CN 104080034 A CN104080034 A CN 104080034A CN 201410191389 A CN201410191389 A CN 201410191389A CN 104080034 A CN104080034 A CN 104080034A
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Prior art keywords
mems
recess
substrate
integrated circuit
microphone assembly
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W·康克林
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Knowles Electronics LLC
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Knowles Electronics LLC
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2807—Enclosures comprising vibrating or resonating arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H10W70/681—
    • H10W90/753—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Computer Hardware Design (AREA)

Abstract

本发明涉及一种具有增大后腔的微机电系统(MEMS)装置。微机电系统(MEMS)麦克风组件包括基底和盖件，该盖件联接至所述基底并且与所述基底一起限定空腔。所述基底形成有凹部，该凹部的尺寸和形状能够容纳MEMS管芯。该MEMS管芯包括振动膜和背板。

Description

具有增大后腔的MEMS装置
技术领域
本申请涉及微机电系统(MEMS)设备，尤其涉及具有改进的性能特性的MEMS麦克风。
背景技术
微机电系统(MEMS)设备包括两个要提及的例子，麦克风和扬声器。以MEMS麦克风为例，声能通过声音端口进入并使振动膜振动，并且这一动作引起振动膜和置于振动膜附近的背板之间的电势(电压)的相应改变。该电压表示接收到的声能。通常，电压随后被传送到集成电路(如，专用集成电路(ASIC))。在集成电路上可执行该信号的进一步处理。比如，在集成电路上可执行对电压信号的放大或滤波功能。MEMS麦克风可用于各种用户电子设备，举两个例子，如与蜂窝式电话相关的设备或与个人电脑相关的设备。
通常需要使麦克风具有尽可能高的灵敏度。灵敏度越高，麦克风的性能越好。众所周知，后腔影响灵敏度，一般而言，麦克风的后腔越大，麦克风的灵敏度越高。
如前所述，MEMS麦克风通常包括设置在组件中的MEMS设备和集成电路(例如，专用集成电路(ASIC))。这些部件虽然是麦克风操作所需要的，但也占据后腔，因而一定程度上限制了能够提供给特定MEMS设备的灵敏度的量。
由于这些缺点，以前的方法已经不能完全解决上面提到的问题并且用户对以前的方法的不满意在增加。
附图说明
为了更完整地理解本发明，参考以下详细描述及其相关附图，其中：
图1包括了根据本发明的各种实施例的麦克风组件的立体图；
图2为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件1的侧剖图，该麦克风组件具有陶瓷基底及位于基底中的凹部；
图3为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件的侧剖图，该麦克风组件具有陶瓷基底及位于基底中的凹部；
图4为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件的侧剖图，该麦克风组件具有陶瓷基底及位于基底中的凹部；
图5为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件的侧剖图，该麦克风组件具有分层的印刷电路板作为基底；
图6为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件的侧剖图，该麦克风组件具有分层的印刷电路板作为基底；
图7为根据本发明的各种实施例的沿附图1的线A-A截取的麦克风组件的侧剖图，该麦克风组件具有分层的印刷电路板作为基底；以及
图8为示出了通过使用根据本发明的各种实施例的在此描述的方法而关于灵敏度的有益效果的曲线图。
熟练的技术人员可以认识到，为了简要和清楚，附图中的元素是示例性的。进一步认识到，可以特定的发生顺序描写或描述某些动作和/或步骤，而那些本领域技术人员将会理解那些关于顺序的特定性实际上并不需要。也可以理解，在此所使用的术语和表达具有根据该术语和表达所涉及的其相关的各个的调查和研究领域一般的含义，除非此处已经另外阐明了特殊的含义。
具体实施方式
提供与以往的MEMS设备相比具有增大的后腔和因此改进的性能的微机电系统(MEMS)设备(如MEMS麦克风)。一方面，在MEMS麦克风的底面端口的基底中形成凹部。MEMS设备设置于基底中。将MEMS设备设置在基底的凹部内增大了MEMS麦克风的后腔。增大的后腔提高了MEMS麦克风的性能特性。例如，实现了增加的灵敏度。此处所使用的“灵敏度”，其含义是MEMS麦克风的换能效率。对于电容感测的MEMS麦克风来说，其表示每单位压强的电势。应理解的是，在此处所描述的实例中，将MEMS设备设置于凹部内。可选择地，也可将MEMS设备加上集成电路(例如，专用集成电路(ASIC))设置于凹部内。进一步，可仅将集成电路(例如，ASIC)设置于凹部内。再进一步，可将基底(如，印刷电路板(PCB))上的任何元件与MEMS设备一起或单独设置于凹部内以增大后腔。
现在参见附图1，2，3和4，描述了具有陶瓷基底的MEMS设备(例如，MEMS麦克风)的例子。这些例子中的每一个例子包括基底102，设置于基底102中的凹部104，位于凹部104内的MEMS设备106，集成电路108以及焊线111(在MEMS设备106和集成电路108之间)。盖或盖件110覆盖在MEMS设备106和集成电路108上，并附接至基底102。端口109延伸贯通基底102。
MEMS设备106包括振动膜112和背板114。后腔116形成于盖110和基底102之间。前腔115形成于端口109内。位于基底的底部上的焊盘(未示出)可以使用导电通路(conductive vias)(未示出)与集成电路108通信。焊盘也可联接于例如那些用于个人计算机或蜂窝式电话上的用户电子设备。其他用户电子设备的例子也是可行的。
在附图1，2和3中的每一个例子中，凹部104具有不同的深度。在附图2中，凹部104是浅的，例如，25微米深。在附图3中，凹部较深(例如，250微米深)并且MEMS设备106的顶部大约与基底102的表面120平齐。
此处所描述的凹部通常是具有平的底部表面的盒状。然而，将认识到凹部也可采取其他形状和构造。
在附图4的例子中，表面120低于表面122，但是不低于产生阶梯形的基底102的表面124。根据例如如何能轻易地附接结合件110等因素来选择凹部104精确的尺寸和深度。也可以考虑其他因素，也可使用基底102的其他构造。
在MEMS麦克风组件100的操作的一个例子中，声能通过声音端口109进入并使振动膜112振动，这一动作造成了振动膜112与设置于振动膜112附近的背板114之间的电势(电压)的相应变化。此电压表示接收到的声能。通常，电压随后被传送到集成电路108。信号的进一步处理可在集成电路108中执行。例如，在集成电路108中可对电压信号执行放大或滤波功能。
有利地，所描述的方法增大了后腔，这是因为一部分MEMS设备106没有占据后腔空间。这导致麦克风的灵敏度增加。
可以理解的是，在此处所描述的例子中将MEMS设备设置于凹部中。可选择地，可将MEMS设备加上集成电路(例如，专用集成电路(如ASIC))设置于凹部中。进一步，可仅将集成电路(如ASIC)设置于凹部中。再进一步，可将基底(例如，印刷电路板(PCB))上的任何元件与MEMS设备一起或单独设置于凹部内以增大后腔。
现在参考图1(该图与此处所描述的所有例子通用)，图5，图6以及图7，描述了具有分层基底的MEMS麦克风的例子。这些例子中的每一个例子包括基底502，被分散在基底502中的凹部504，设置于凹部504内的MEMS设备506，集成电路508，焊线511(在MEMS设备506和集成电路508之间)。盖510覆盖在MEMS设备506和集成电路508上，并附接至基底502。
在图5中，凹部504是浅的(如，25微米深)。在图6中，凹部504较深(如，250微米深)并且MEMS设备506的顶部大约与基底502的表面520平齐。端口509延伸贯通基底502。
在图7的例子中，表面520低于表面522，但是不低于产生阶梯形状基底502的表面524。根据例如如何能轻易地附接结合件510等因素来选择凹部精确的尺寸和深度。也可以考虑其他因素。也可使用基底502的其他构造。
有利地，所描述的方法增大了后腔，这是因为一部分MEMS设备504没有占据后腔空间。这导致麦克风组件500的灵敏度增加。
基底502包括第一金属层540，第二金属层542，第三金属层544，第一绝缘层546以及第二绝缘层548。管道550将金属层联接到一起。焊盘552将MEMS设备506和集成电路508联接到金属层。设备外部的焊盘将外部用户电子设备联接到组件500。将理解的是，以上所描述的每一层精确尺寸，形状以及组成可以改变。
在MEMS麦克风组件500的操作的一个例子中，声能通过声音端口509进入并使振动膜512振动，这一动作造成了振动膜512与设置于振动膜512附近的背板514之间的电势(电压)的相应变化。此电压表示接收到的声能。通常，电压随后被传送到集成电路508。信号的进一步处理可在集成电路508中执行。例如，在集成电路508中可对电压信号执行放大或滤波功能。
可以理解的是，在此处所描述的例子中将MEMS设备设置于凹部中。可选择地，可将MEMS设备加上集成电路(例如，专用集成电路(如ASIC))设置于凹部中。进一步，可仅将集成电路(如ASIC)设置于凹部中。再进一步，可将基底(例如，印刷电路板(PCB))上的任何元件与MEMS设备一起或单独设置于凹部内以增大后腔。
现在参考图8，描述了本方法的有益效果的一个例子。X轴表示MEMS麦克风的后腔，而Y轴表示MEMS麦克风的灵敏度。可见，随着后腔的增大，麦克风的灵敏度也在增加，从而设备具有改进的性能特性。例如，在曲线上的点802处，后腔相对较小(如1.5mm3)。随着后腔的增大，例如到点804处，灵敏度也增加到较大的量。在一个例子中，后腔改变大约2mm3或2.5mm3，则灵敏度随之改变从大约0.5dB到2dB。
此处描述了本发明的优选实施例，包括发明人所知的实现本发明最好的模式。应当理解，所阐明的实施例只是示例性的，不能作为本发明范围的限制。
相关申请的交叉引用
根据35U.S.C.§119(e)，本专利要求2013年3月28日提交的、名称为“具有增大后腔的MEMS装置”的美国临时申请No.61805993的权益，并且该申请的全部内容通过引用结合于此。

Claims (6)

1.一种微机电系统麦克风组件，即MEMS麦克风组件，包括：
基底；
盖件，该盖件联接至所述基底并且与所述基底一起限定空腔；
其中，所述基底形成有凹部，该凹部的尺寸和形状能够容纳MEMS管芯，该MEMS管芯包括振动膜和背板。
2.如权利要求1所述的MEMS麦克风组件，其中，所述凹部还容纳集成电路，该集成电路电联接至所述MEMS管芯。
3.如权利要求1所述的MEMS麦克风组件，其中，所述基底包括多层印刷电路板。
4.如权利要求1所述的MEMS麦克风组件，其中，一端口延伸贯通所述基底并且与所述MEMS管芯的部分连通。
5.如权利要求1所述的MEMS麦克风组件，其中，所述基底限定了顶面并且所述MEMS管芯延伸得高于所述顶面并且进入所述空腔。
6.如权利要求1所述的MEMS麦克风组件，其中，所述基底限定了顶面并且所述MEMS管芯延伸得低于所述顶面并且进入所述空腔。
CN201410191389.2A 2013-03-28 2014-03-27 具有增大后腔的mems装置 Pending CN104080034A (zh)

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EP (1) EP2979466A4 (zh)
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