BRPI0822173A2 - Arranjko de guia de luz para um sensor de imagem. - Google Patents

Arranjko de guia de luz para um sensor de imagem.

Info

Publication number: BRPI0822173A2
Authority: BR; Brazil
Prior art keywords: light guide; image sensor; guide arrangement; arrangement; sensor
Prior art date: 2007-12-28

Application number

BRPI0822173-1A

Other languages

English (en)

Inventor

Hick Nam Tay

Thanh-Trung Do

Original Assignee

Hick Nam Tay

Candela Microsystems S Pte Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-12-28

Filing date

2008-12-22

Publication date

2015-06-16

2008-12-22 Application filed by Hick Nam Tay, Candela Microsystems S Pte Ltd filed Critical Hick Nam Tay

2015-06-16 Publication of BRPI0822173A2 publication Critical patent/BRPI0822173A2/pt

2019-01-22 Publication of BRPI0822173A8 publication Critical patent/BRPI0822173A8/pt

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding

BRPI0822173A 2007-12-28 2008-12-22 arranjo de guia de luz para um sensor de imagem BRPI0822173A8 (pt)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
US945407P	2007-12-28	2007-12-28
US6277308P	2008-01-28	2008-01-28
US6330108P	2008-02-01	2008-02-01
US6934408P	2008-03-14	2008-03-14
US12/218,749 US7816641B2 (en)	2007-12-28	2008-07-16	Light guide array for an image sensor
PCT/US2008/088077 WO2009091484A1 (en)	2007-12-28	2008-12-22	Light guide array for an image sensor

Publications (2)

Publication Number	Publication Date
BRPI0822173A2 true BRPI0822173A2 (pt)	2015-06-16
BRPI0822173A8 BRPI0822173A8 (pt)	2019-01-22

Family

ID=40796956

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BRPI0822173A BRPI0822173A8 (pt)	2007-12-28	2008-12-22	arranjo de guia de luz para um sensor de imagem

Country Status (11)

Country	Link
US (6)	US7816641B2 (pt)
JP (1)	JP6079978B2 (pt)
CN (1)	CN101971339B (pt)
BR (1)	BRPI0822173A8 (pt)
DE (1)	DE112008003468T5 (pt)
ES (2)	ES2545429B1 (pt)
GB (9)	GB2487014B (pt)
MX (1)	MX2010007203A (pt)
SG (1)	SG187382A1 (pt)
TW (3)	TWI497705B (pt)
WO (1)	WO2009091484A1 (pt)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4224789B2 (ja) *	2004-03-01	2009-02-18	ソニー株式会社	撮像装置
WO2008093830A1 (ja) *	2007-02-02	2008-08-07	Panasonic Corporation	撮像装置、その製造方法および携帯端末装置
US7816641B2 (en) *	2007-12-28	2010-10-19	Candela Microsystems (S) Pte. Ltd.	Light guide array for an image sensor
JP5314914B2 (ja) *	2008-04-04	2013-10-16	キヤノン株式会社	光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP2009252983A (ja) *	2008-04-04	2009-10-29	Canon Inc	撮像センサー、及び撮像センサーの製造方法
EP2286193A1 (en) *	2008-05-27	2011-02-23	Nxp B.V.	Light sensor device and manufacturing method
JP2010283145A (ja) *	2009-06-04	2010-12-16	Sony Corp	固体撮像素子及びその製造方法、電子機器
MX2010007359A (es) *	2009-07-02	2011-06-02	Tay Hioknam	Matriz de guia de luz para un sensor de imagen.
US20110068426A1 (en) *	2009-09-22	2011-03-24	Intersil Americas Inc.	Photodiodes and methods for fabricating photodiodes
AU2010316634A1 (en) *	2009-11-05	2012-05-31	Hiok Nam Tay	Optimized light guide array for an image sensor
JP2011108759A (ja) *	2009-11-13	2011-06-02	Canon Inc	固体撮像装置
US8258456B2 (en) *	2009-11-27	2012-09-04	Himax Imaging, Inc.	Image sensor
JP5566093B2 (ja)	2009-12-18	2014-08-06	キヤノン株式会社	固体撮像装置
US8729581B2 (en) *	2010-01-13	2014-05-20	Apple Inc.	Light guide for LED source
CN102130137A (zh) *	2010-01-18	2011-07-20	英属开曼群岛商恒景科技股份有限公司	图像传感器
CN102792151B (zh) *	2010-03-23	2015-11-25	加州理工学院	用于2d和3d成像的超分辨率光流体显微镜
US8981510B2 (en) *	2010-06-04	2015-03-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Ridge structure for back side illuminated image sensor
TWI407559B (zh) *	2010-06-29	2013-09-01	Himax Imagimg Inc	影像感測器及其相關製造方法
US8860835B2 (en) *	2010-08-11	2014-10-14	Inview Technology Corporation	Decreasing image acquisition time for compressive imaging devices
US10720350B2 (en) *	2010-09-28	2020-07-21	Kla-Tencore Corporation	Etch-resistant coating on sensor wafers for in-situ measurement
US9643184B2 (en)	2010-10-26	2017-05-09	California Institute Of Technology	e-Petri dishes, devices, and systems having a light detector for sampling a sequence of sub-pixel shifted projection images
WO2012058233A2 (en)	2010-10-26	2012-05-03	California Institute Of Technology	Scanning projective lensless microscope system
US9569664B2 (en)	2010-10-26	2017-02-14	California Institute Of Technology	Methods for rapid distinction between debris and growing cells
JP5631176B2 (ja)	2010-11-29	2014-11-26	キヤノン株式会社	固体撮像素子及びカメラ
JP2012182426A (ja) *	2011-02-09	2012-09-20	Canon Inc	固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
EP2487717B1 (en) *	2011-02-09	2014-09-17	Canon Kabushiki Kaisha	Photoelectric conversion element, photoelectric conversion apparatus and image sensing system
KR20140027113A (ko)	2011-03-03	2014-03-06	캘리포니아 인스티튜트 오브 테크놀로지	도광 픽셀
CN102231384B (zh) *	2011-06-22	2013-05-01	格科微电子（上海）有限公司	图像传感器及其形成方法
CN102332459B (zh) *	2011-07-28	2016-02-03	上海华虹宏力半导体制造有限公司	Cmos图像传感器及其形成方法
WO2013035858A1 (ja) *	2011-09-07	2013-03-14	株式会社ニコン	立体像の撮像装置及び立体像撮像装置用の撮像素子
JP2013207053A (ja) *	2012-03-28	2013-10-07	Sony Corp	固体撮像素子、電子機器
CN102709345B (zh) *	2012-05-19	2014-07-02	渤海大学	超薄晶硅电池结构
JP6021439B2 (ja) *	2012-05-25	2016-11-09	キヤノン株式会社	固体撮像装置
KR101614093B1 (ko) *	2012-05-30	2016-04-20	맷슨 테크놀로지, 인크.	마이크로 렌즈의 형성 방법
JP6057728B2 (ja) *	2013-01-16	2017-01-11	キヤノン株式会社	固体撮像装置の製造方法
JP2014143376A (ja) *	2013-01-25	2014-08-07	Sony Corp	半導体装置及び半導体装置の製造方法
US9215430B2 (en) *	2013-03-15	2015-12-15	Omnivision Technologies, Inc.	Image sensor with pixels having increased optical crosstalk
US20140367816A1 (en) *	2013-06-12	2014-12-18	Avago Technologies General Ip (Singapore) Pte.Ltd.	Photodetector device having light-collecting optical microstructure
US8957490B2 (en) *	2013-06-28	2015-02-17	Infineon Technologies Dresden Gmbh	Silicon light trap devices
CN103346162B (zh) *	2013-07-03	2015-10-28	豪威科技(上海)有限公司	背照式cmos影像传感器及其制造方法
JP2017050298A (ja) *	2014-01-21	2017-03-09	パナソニックＩｐマネジメント株式会社	固体撮像装置及びその製造方法
JP6444066B2 (ja)	2014-06-02	2018-12-26	キヤノン株式会社	光電変換装置および撮像システム
JP6173259B2 (ja)	2014-06-02	2017-08-02	キヤノン株式会社	光電変換装置および撮像システム
KR20150139337A (ko) *	2014-06-03	2015-12-11	삼성전자주식회사	화상형성장치의 애플리케이션 실행을 조작하는 화면을 제공하는 방법 및 이를 이용하는 화상형성장치
US10170516B2 (en) *	2014-07-23	2019-01-01	Visera Technologies Company Limited	Image sensing device and method for fabricating the same
JP6688296B2 (ja)	2014-10-23	2020-04-28	コーニングインコーポレイテッド	光拡散部材および光拡散部材の製造方法
JP2017022293A (ja)	2015-07-13	2017-01-26	キヤノン株式会社	固体撮像装置の製造方法
US10488639B2 (en)	2015-10-08	2019-11-26	Visera Technologies Company Limited	Detection device for specimens
US9778191B2 (en) *	2016-02-05	2017-10-03	Personal Genomics, Inc.	Optical sensing module
JP6744748B2 (ja)	2016-04-06	2020-08-19	キヤノン株式会社	固体撮像装置及びその製造方法
JP6465839B2 (ja) *	2016-07-06	2019-02-06	キヤノン株式会社	光電変換装置、撮像システム、移動体、および、光電変換装置の製造方法
TWI598859B (zh) *	2016-10-26	2017-09-11	友達光電股份有限公司	電子裝置與其製造方法
KR102654485B1 (ko) *	2016-12-30	2024-04-03	삼성전자주식회사	이미지 센서 및 그 제조 방법
TWI622165B (zh) *	2017-03-06	2018-04-21	Powerchip Technology Corporation	影像感測器及其製作方法
EP3460848A1 (en)	2017-09-26	2019-03-27	Thomson Licensing	Image sensor comprising pixels for preventing or reducing the crosstalk effect
KR102506837B1 (ko) *	2017-11-20	2023-03-06	삼성전자주식회사	이미지 센서 및 그 제조 방법
CN108257999A (zh) *	2018-01-24	2018-07-06	德淮半导体有限公司	图像传感器及形成图像传感器的方法
CN108470748B (zh) *	2018-03-03	2021-10-22	昆山国显光电有限公司	显示屏幕、显示装置及终端设备
US10609361B2 (en) *	2018-06-29	2020-03-31	Semiconductor Components Industries, Llc	Imaging systems with depth detection
US10950674B2 (en) *	2018-12-25	2021-03-16	Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.	Display panel
CN109920810B (zh) *	2019-03-22	2021-07-20	德淮半导体有限公司	图像传感器及其形成方法
CN112750847B (zh)	2019-10-31	2024-10-18	台湾积体电路制造股份有限公司	半导体装置及其形成方法
US11749762B2 (en)	2019-10-31	2023-09-05	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor device comprising a photodetector with reduced dark current
CN111463226A (zh) *	2020-05-11	2020-07-28	矽力杰半导体技术(杭州)有限公司	光电集成器件及其制造方法
US20220013560A1 (en) *	2020-07-07	2022-01-13	Visera Technologies Company Limited	Image sensor
JP7665301B2 (ja) *	2020-08-03	2025-04-21	キヤノン株式会社	光電変換装置及びその製造方法と、撮像システム
US11923393B2 (en) *	2021-01-07	2024-03-05	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor image sensor having reflection component and method of making
US12183753B2 (en) *	2021-07-08	2024-12-31	Taiwan Semiconductor Manufacturing Company, Ltd.	Image sensor and method of making
CN115690858A (zh) *	2021-07-30	2023-02-03	群创光电股份有限公司	感测装置、感测装置的制作方法以及电子装置
EP4395360A4 (en) *	2021-08-23	2024-11-13	Sony Semiconductor Solutions Corporation	IMAGING DEVICE AND ELECTRONIC APPARATUS
US20230411540A1 (en) *	2022-06-16	2023-12-21	Taiwan Semiconductor Manufacturing Company Limited	Semiconductor device and method of making
KR20240133030A (ko) *	2023-02-28	2024-09-04	주식회사 디비하이텍	이미지 센서 및 제조방법

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2863422B2 (ja) *	1992-10-06	1999-03-03	松下電子工業株式会社	固体撮像装置およびその製造方法
JP3303377B2 (ja)	1992-11-27	2002-07-22	ソニー株式会社	固体撮像装置
JP2869280B2 (ja)	1993-01-27	1999-03-10	シャープ株式会社	固体撮像素子及びその製造方法
JPH0964325A (ja) *	1995-08-23	1997-03-07	Sony Corp	固体撮像素子とその製造方法
US5952645A (en) *	1996-08-27	1999-09-14	California Institute Of Technology	Light-sensing array with wedge-like reflective optical concentrators
JPH10125887A (ja) *	1996-10-21	1998-05-15	Toshiba Corp	固体撮像素子
JP3402429B2 (ja)	1996-11-22	2003-05-06	ソニー株式会社	固体撮像素子及びその製造方法
JP3620237B2 (ja) *	1997-09-29	2005-02-16	ソニー株式会社	固体撮像素子
AU2991799A (en)	1998-03-09	1999-09-27	Corning Incorporated	Optical waveguide structure including cascaded arrays of tapered waveguides
JP3103064B2 (ja)	1998-04-23	2000-10-23	松下電子工業株式会社	固体撮像装置およびその製造方法
US6577342B1 (en) *	1998-09-25	2003-06-10	Intel Corporation	Image sensor with microlens material structure
US6995800B2 (en) *	2000-01-27	2006-02-07	Canon Kabushiki Kaisha	Image pickup apparatus utilizing a plurality of converging lenses
JP2001237405A (ja)	2000-02-24	2001-08-31	Victor Co Of Japan Ltd	固体撮像装置および固体撮像装置の製造方法
WO2002011406A2 (en) *	2000-07-31	2002-02-07	Koninklijke Philips Electronics N.V.	Image-sensing display device
JP2002083949A (ja) *	2000-09-07	2002-03-22	Nec Corp	Ｃｍｏｓイメージセンサ及びその製造方法
US6566160B2 (en) *	2001-06-21	2003-05-20	United Microelectronics Corp.	Method of forming a color filter
US6566151B2 (en) *	2001-06-21	2003-05-20	United Microelectronics Corp.	Method of forming a color filter
FR2829876B1 (fr) *	2001-09-18	2004-07-02	St Microelectronics Sa	Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6975580B2 (en) *	2001-12-18	2005-12-13	Interntional Business Machines Corporation	Optical aperture for data recording having transmission enhanced by waveguide mode resonance
JP2003229562A (ja)	2002-02-05	2003-08-15	Sony Corp	半導体装置、その製造方法及び半導体製造装置
JP2004095895A (ja)	2002-08-30	2004-03-25	Sony Corp	固体撮像素子の製造方法
JP3840214B2 (ja)	2003-01-06	2006-11-01	キヤノン株式会社	光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ
US6861686B2 (en) *	2003-01-16	2005-03-01	Samsung Electronics Co., Ltd.	Structure of a CMOS image sensor and method for fabricating the same
US7001795B2 (en) *	2003-02-27	2006-02-21	Micron Technology, Inc.	Total internal reflection (TIR) CMOS imager
US7502058B2 (en) *	2003-06-09	2009-03-10	Micron Technology, Inc.	Imager with tuned color filter
JP4548702B2 (ja) *	2003-10-02	2010-09-22	キヤノン株式会社	撮像装置および撮像システム
US6969899B2 (en) *	2003-12-08	2005-11-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Image sensor with light guides
US7060961B2 (en) *	2003-12-12	2006-06-13	Canon Kabushiki Kaisha	Image sensing element and optical instrument having improved incident light use efficiency
EP1557886A3 (en) *	2004-01-26	2006-06-07	Matsushita Electric Industrial Co., Ltd.	Solid-state imaging device and camera
US7119319B2 (en) *	2004-04-08	2006-10-10	Canon Kabushiki Kaisha	Solid-state image sensing element and its design support method, and image sensing device
KR100689885B1 (ko) *	2004-05-17	2007-03-09	삼성전자주식회사	광감도 및 주변광량비 개선을 위한 ｃｍｏｓ 이미지 센서및 그 제조방법
US20050274871A1 (en) *	2004-06-10	2005-12-15	Jin Li	Method and apparatus for collecting photons in a solid state imaging sensor
KR100688497B1 (ko) *	2004-06-28	2007-03-02	삼성전자주식회사	이미지 센서 및 그 제조방법
US7335963B2 (en)	2004-08-25	2008-02-26	Micron Technology, Inc.	Light block for pixel arrays
US7453109B2 (en) *	2004-09-03	2008-11-18	Canon Kabushiki Kaisha	Solid-state image sensor and imaging system
US7768088B2 (en) *	2004-09-24	2010-08-03	Fujifilm Corporation	Solid-state imaging device that efficiently guides light to a light-receiving part
US7078779B2 (en) *	2004-10-15	2006-07-18	Taiwan Semiconductor Manufacturing Co., Ltd	Enhanced color image sensor device and method of making the same
JP2006128433A (ja) *	2004-10-29	2006-05-18	Sony Corp	光フィルタ付き光学装置及びその製造方法
US7193289B2 (en) *	2004-11-30	2007-03-20	International Business Machines Corporation	Damascene copper wiring image sensor
JP2006191000A (ja) *	2004-12-08	2006-07-20	Canon Inc	光電変換装置
KR100672660B1 (ko) *	2004-12-24	2007-01-24	동부일렉트로닉스 주식회사	씨모스 이미지 센서 및 그 제조방법
US8139131B2 (en) *	2005-01-18	2012-03-20	Panasonic Corporation	Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP4598680B2 (ja) *	2005-01-18	2010-12-15	パナソニック株式会社	固体撮像装置及びカメラ
JP2006237362A (ja) *	2005-02-25	2006-09-07	Fuji Photo Film Co Ltd	固体撮像素子の製造方法
JP2006261229A (ja) *	2005-03-15	2006-09-28	Fuji Photo Film Co Ltd	固体撮像素子およびその製造方法
JP2006310825A (ja) *	2005-03-30	2006-11-09	Fuji Photo Film Co Ltd	固体撮像素子およびその製造方法
KR100672687B1 (ko) *	2005-06-03	2007-01-22	동부일렉트로닉스 주식회사	씨모스 이미지 센서 및 그 제조방법
JP2006351775A (ja) *	2005-06-15	2006-12-28	Fujifilm Holdings Corp	カラーフィルタの製造方法、固体撮像素子の製造方法およびこれを用いた固体撮像素子
KR100718877B1 (ko) *	2005-06-20	2007-05-17	(주)실리콘화일	이미지센서의 칼라필터 형성방법 및 이를 이용하여 제조된이미지 센서
KR100698091B1 (ko) *	2005-06-27	2007-03-23	동부일렉트로닉스 주식회사	씨모스 이미지 센서 및 그 제조방법
US7265328B2 (en) *	2005-08-22	2007-09-04	Micron Technology, Inc.	Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor
US20070052035A1 (en) *	2005-08-23	2007-03-08	Omnivision Technologies, Inc.	Method and apparatus for reducing optical crosstalk in CMOS image sensors
US20100128353A1 (en) *	2005-10-06	2010-05-27	Nippon Sheet Glass Company, Limited	Imaging optical system, image reading apparatus and image reading apparatus using the imaging optical system
JP2007150087A (ja)	2005-11-29	2007-06-14	Fujifilm Corp	固体撮像素子およびその製造方法
FR2894072A1 (fr)	2005-11-30	2007-06-01	St Microelectronics Sa	Circuit integre muni d'au moins une cellule photosensible comprenant un guide de lumiere a plusieurs niveaux et procede de fabrication correspondant
KR20070069833A (ko) *	2005-12-28	2007-07-03	동부일렉트로닉스 주식회사	씨모스 이미지 센서 및 그 제조방법
KR100731131B1 (ko) *	2005-12-29	2007-06-22	동부일렉트로닉스 주식회사	씨모스 이미지 센서 및 그 제조방법
US7675080B2 (en) *	2006-01-10	2010-03-09	Aptina Imaging Corp.	Uniform color filter arrays in a moat
JP4759410B2 (ja) *	2006-03-06	2011-08-31	富士フイルム株式会社	固体撮像素子
US8610806B2 (en) *	2006-08-28	2013-12-17	Micron Technology, Inc.	Color filter array, imagers and systems having same, and methods of fabrication and use thereof
JP2008192771A (ja) *	2007-02-02	2008-08-21	Matsushita Electric Ind Co Ltd	固体撮像素子およびその製造方法
JP5364989B2 (ja)	2007-10-02	2013-12-11	ソニー株式会社	固体撮像装置およびカメラ
JP5164509B2 (ja)	2007-10-03	2013-03-21	キヤノン株式会社	光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP2009111225A (ja) *	2007-10-31	2009-05-21	Fujifilm Corp	固体撮像素子及びその製造方法
US7816641B2 (en) *	2007-12-28	2010-10-19	Candela Microsystems (S) Pte. Ltd.	Light guide array for an image sensor

2008
- 2008-07-16 US US12/218,749 patent/US7816641B2/en not_active Expired - Fee Related
- 2008-12-22 GB GB1205474.8A patent/GB2487014B/en not_active Expired - Fee Related
- 2008-12-22 US US12/810,998 patent/US20100283112A1/en not_active Abandoned
- 2008-12-22 ES ES201430928A patent/ES2545429B1/es active Active
- 2008-12-22 ES ES201090046A patent/ES2422869B1/es not_active Expired - Fee Related
- 2008-12-22 GB GB1012706.6A patent/GB2469247B/en not_active Expired - Fee Related
- 2008-12-22 CN CN200880123359.0A patent/CN101971339B/zh not_active Expired - Fee Related
- 2008-12-22 GB GB1209401.7A patent/GB2488470B/en not_active Expired - Fee Related
- 2008-12-22 BR BRPI0822173A patent/BRPI0822173A8/pt not_active IP Right Cessation
- 2008-12-22 GB GB1203373.4A patent/GB2485715B/en not_active Expired - Fee Related
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- 2008-12-22 SG SG2012089348A patent/SG187382A1/en unknown
- 2008-12-22 WO PCT/US2008/088077 patent/WO2009091484A1/en not_active Ceased
- 2008-12-22 GB GB1205371.6A patent/GB2487013B/en not_active Expired - Fee Related
- 2008-12-22 DE DE112008003468T patent/DE112008003468T5/de not_active Withdrawn
- 2008-12-22 JP JP2010540848A patent/JP6079978B2/ja not_active Expired - Fee Related
- 2008-12-26 TW TW102128405A patent/TWI497705B/zh not_active IP Right Cessation
- 2008-12-26 TW TW097151100A patent/TWI414059B/zh not_active IP Right Cessation
- 2008-12-26 TW TW104115985A patent/TWI580017B/zh not_active IP Right Cessation
2010
- 2010-01-27 US US12/694,299 patent/US8049153B2/en not_active Expired - Fee Related
- 2010-09-30 US US12/894,283 patent/US8299511B2/en not_active Expired - Fee Related
2012
- 2012-02-27 GB GBGB1203358.5A patent/GB201203358D0/en not_active Ceased
- 2012-03-26 GB GBGB1205198.3A patent/GB201205198D0/en not_active Ceased
- 2012-10-11 US US13/649,137 patent/US20130034927A1/en not_active Abandoned
2013
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Also Published As

Publication number	Publication date
GB2487013A (en)	2012-07-04
JP6079978B2 (ja)	2017-09-20
GB201205195D0 (en)	2012-05-09
ES2422869B1 (es)	2015-08-07
US8049153B2 (en)	2011-11-01
GB2487014B (en)	2012-08-15
JP2011508457A (ja)	2011-03-10
GB2488468A (en)	2012-08-29
GB2485715B (en)	2012-08-15
TWI414059B (zh)	2013-11-01
GB2485715A (en)	2012-05-23
GB201012706D0 (en)	2010-09-15
US20090166518A1 (en)	2009-07-02
TWI580017B (zh)	2017-04-21
ES2422869A1 (es)	2013-09-16
HK1171566A1 (en)	2013-03-28
GB2469247B (en)	2012-10-03
GB2488470B (en)	2012-12-26
GB201209401D0 (en)	2012-07-11
TW201543661A (zh)	2015-11-16
DE112008003468T5 (de)	2011-01-20
US20100155870A1 (en)	2010-06-24
GB201205474D0 (en)	2012-05-09
CN101971339A (zh)	2011-02-09
GB2487010B (en)	2012-08-15
GB2487014A (en)	2012-07-04
HK1175304A1 (en)	2013-06-28
HK1175303A1 (en)	2013-06-28
CN101971339B (zh)	2012-09-05
US7816641B2 (en)	2010-10-19
GB201209391D0 (en)	2012-07-11
HK1171568A1 (en)	2013-03-28
TW201415616A (zh)	2014-04-16
BRPI0822173A8 (pt)	2019-01-22
ES2545429R1 (es)	2015-10-07
GB201205371D0 (en)	2012-05-09
MX2010007203A (es)	2011-02-22
TW200947684A (en)	2009-11-16
US20130034927A1 (en)	2013-02-07
GB2487010A (en)	2012-07-04
ES2545429B1 (es)	2016-10-07
GB201203373D0 (en)	2012-04-11
US20140117208A1 (en)	2014-05-01
WO2009091484A1 (en)	2009-07-23
US20100283112A1 (en)	2010-11-11
SG187382A1 (en)	2013-02-28
US20110027936A1 (en)	2011-02-03
TWI497705B (zh)	2015-08-21
US8299511B2 (en)	2012-10-30
GB2469247A (en)	2010-10-06
GB2488468B (en)	2013-04-24
GB201203358D0 (en)	2012-04-11
GB2488470A (en)	2012-08-29
GB2487013B (en)	2012-09-12
GB201205198D0 (en)	2012-05-09
ES2545429A2 (es)	2015-09-10

Publication	Publication Date	Title
BRPI0822173A2 (pt)	2015-06-16	Arranjko de guia de luz para um sensor de imagem.
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FR2921163B1 (fr)	2009-12-25	Lentille de contact stabilisee.
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EP2040116A4 (en)	2010-07-14	LENS ARRAY
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IL200115A0 (en)	2010-04-15	Fluorescent emulsions for optical imaging
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NL2003207A1 (nl)	2010-01-22	Optical element mount for lithographic apparatus.
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FR2904120B1 (fr)	2008-11-28	Element de cable optique autorenforce.
CL2008001087S1 (es)	2008-10-17	Foco de luz.
CL2008001522S1 (es)	2008-09-05	Foco de luz.
HK1175303B (en)	2013-11-22	Light guide array for an image sensor
HK1175304B (en)	2013-11-22	Light guide array for an image sensor
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2018-02-20	B08K	Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]