BRPI0814930A2 - Método de solidificação de silício metálico - Google Patents

Método de solidificação de silício metálico

Info

Publication number: BRPI0814930A2
Authority: BR; Brazil
Prior art keywords: silicy; metal; solidification method; solidification; silicy solidification
Prior art date: 2007-06-08

Application number

BRPI0814930-5A2A

Other languages

English (en)

Inventor

Motoyuki Yamada

Kazuhisa Hatayama

Original Assignee

Shinetsu Chemical Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-06-08

Filing date

2008-06-06

Publication date

2015-02-03

2008-06-06 Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co

2015-02-03 Publication of BRPI0814930A2 publication Critical patent/BRPI0814930A2/pt

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)

BRPI0814930-5A2A 2007-06-08 2008-06-06 Método de solidificação de silício metálico BRPI0814930A2 (pt)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2007152294		2007-06-08
PCT/JP2008/060472 WO2008149985A1 (ja)	2007-06-08	2008-06-06	金属珪素の凝固方法

Publications (1)

Publication Number	Publication Date
BRPI0814930A2 true BRPI0814930A2 (pt)	2015-02-03

Family

ID=40093789

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BRPI0814930-5A2A BRPI0814930A2 (pt)	2007-06-08	2008-06-06	Método de solidificação de silício metálico

Country Status (9)

Country	Link
US (1)	US20100178195A1 (pt)
EP (1)	EP2172424A4 (pt)
JP (1)	JPWO2008149985A1 (pt)
KR (1)	KR20100022516A (pt)
CN (1)	CN101778795A (pt)
AU (1)	AU2008260891A1 (pt)
BR (1)	BRPI0814930A2 (pt)
CA (1)	CA2689603A1 (pt)
WO (1)	WO2008149985A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2010119502A1 (ja) *	2009-04-14	2010-10-21	信越化学工業株式会社	金属珪素の精製方法
TWI393805B (zh) *	2009-11-16	2013-04-21	Masahiro Hoshino	Purification method of metallurgical silicon
WO2011068736A1 (en) *	2009-12-01	2011-06-09	Dow Corning Corporation	Rotational casting process
TWI397617B (zh) *	2010-02-12	2013-06-01	Masahiro Hoshino	Metal silicon purification device
TWI403461B (zh)	2010-07-21	2013-08-01	Masahiro Hoshino	Method and apparatus for improving yield and yield of metallurgical silicon
DE102011004753A1 (de) *	2011-02-25	2012-08-30	Evonik Degussa Gmbh	Verfahren zum Aufreinigen von Silicium
CN102659110B (zh) *	2012-04-19	2014-03-19	厦门大学	一种采用硅铁合金定向凝固提纯多晶硅的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4195067A (en) *	1977-11-21	1980-03-25	Union Carbide Corporation	Process for the production of refined metallurgical silicon
US4124410A (en) *	1977-11-21	1978-11-07	Union Carbide Corporation	Silicon solar cells with low-cost substrates
US4193974A (en) *	1977-11-21	1980-03-18	Union Carbide Corporation	Process for producing refined metallurgical silicon ribbon
US4193975A (en) *	1977-11-21	1980-03-18	Union Carbide Corporation	Process for the production of improved refined metallurgical silicon
US4247528A (en) *	1979-04-11	1981-01-27	Dow Corning Corporation	Method for producing solar-cell-grade silicon
US4457902A (en) *	1980-10-24	1984-07-03	Watson Keith R	High efficiency hydrocarbon reduction of silica
US4612179A (en) *	1985-03-13	1986-09-16	Sri International	Process for purification of solid silicon
US5009703A (en) *	1990-08-13	1991-04-23	Dow Corning Corporation	Silicon smelting process in direct current furnace
JP3247842B2 (ja)	1996-10-14	2002-01-21	川崎製鉄株式会社	太陽電池用シリコンの鋳造方法
JPH10182134A (ja)	1996-10-31	1998-07-07	Kawasaki Steel Corp	シリコンの精製方法
JPH10182137A (ja)	1996-12-26	1998-07-07	Kawasaki Steel Corp	太陽電池用シリコンの凝固精製方法及び装置
JPH10236815A (ja) *	1997-02-28	1998-09-08	Kawasaki Steel Corp	太陽電池用シリコンの製造方法
JP3497355B2 (ja) *	1997-10-06	2004-02-16	信越フィルム株式会社	シリコンの精製方法
FR2827592B1 (fr) *	2001-07-23	2003-08-22	Invensil	Silicium metallurgique de haute purete et procede d'elaboration
EP1772429A4 (en) *	2004-06-22	2010-01-06	Shin Etsu Film Co Ltd	METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR SOLAR CELLS MADE ACCORDING TO THE PROCESS
JP4115432B2 (ja) *	2004-07-14	2008-07-09	シャープ株式会社	金属の精製方法
JP4689373B2 (ja) *	2005-07-04	2011-05-25	シャープ株式会社	シリコンの再利用方法
US8173094B2 (en) *	2005-12-27	2012-05-08	Sumitomo Chemical Company, Limited	Method for producing polycrystalline silicon
WO2008004460A1 (en) *	2006-07-06	2008-01-10	Lotus Alloy Co., Ltd.	Method for manufacturing porous body
KR101074304B1 (ko) *	2006-08-31	2011-10-17	미쓰비시마테리알덴시카세이가부시키가이샤	금속 실리콘과 그 제조 방법
UA97488C2 (ru) *	2006-09-14	2012-02-27	Силисиум Беканкур Инк.	Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом
FR2908125B1 (fr) *	2006-11-02	2009-11-20	Commissariat Energie Atomique	Procede de purification de silicium metallurgique par solidification dirigee
JP2008115040A (ja) *	2006-11-02	2008-05-22	Sharp Corp	シリコン再生装置、シリコン再生方法
CA2695393C (en) *	2007-09-13	2012-01-03	Silicium Becancour Inc.	Process for the production of medium and high purity silicon from metallurgical grade silicon

2008
- 2008-06-06 JP JP2009517913A patent/JPWO2008149985A1/ja active Pending
- 2008-06-06 AU AU2008260891A patent/AU2008260891A1/en not_active Abandoned
- 2008-06-06 CA CA2689603A patent/CA2689603A1/en not_active Abandoned
- 2008-06-06 KR KR1020107000285A patent/KR20100022516A/ko not_active Withdrawn
- 2008-06-06 WO PCT/JP2008/060472 patent/WO2008149985A1/ja not_active Ceased
- 2008-06-06 US US12/663,462 patent/US20100178195A1/en not_active Abandoned
- 2008-06-06 BR BRPI0814930-5A2A patent/BRPI0814930A2/pt not_active Application Discontinuation
- 2008-06-06 CN CN200880019233A patent/CN101778795A/zh active Pending
- 2008-06-06 EP EP08765285A patent/EP2172424A4/en not_active Withdrawn

Also Published As

Publication number	Publication date
WO2008149985A1 (ja)	2008-12-11
EP2172424A1 (en)	2010-04-07
US20100178195A1 (en)	2010-07-15
KR20100022516A (ko)	2010-03-02
EP2172424A4 (en)	2012-03-07
JPWO2008149985A1 (ja)	2010-08-26
CA2689603A1 (en)	2008-12-11
CN101778795A (zh)	2010-07-14
AU2008260891A1 (en)	2008-12-11

Publication	Publication Date	Title
BRPI0814359A2 (pt)	2015-08-11	Método
BRPI0817226A2 (pt)	2015-06-16	Método
BRPI0817726A2 (pt)	2015-03-31	Método
DE112008003601A5 (de)	2010-10-07	AI-Gusslegierungen
EP2150417A4 (en)	2010-09-08	METALLIKFARBE
BRPI0719783A2 (pt)	2014-11-25	Estrutura de metal vertical
BRPI0919116A2 (pt)	2015-12-08	método
EP2100004A4 (en)	2015-10-21	HIGH STRENGTH ALLOYS
BRPI0816314A2 (pt)	2015-03-31	Método de conversão
BR112012004593A2 (pt)	2017-05-23	"método"
BRPI0817667A2 (pt)	2014-10-07	Método de marcação
DK2313489T3 (da)	2015-06-22	Fremstillingsmetode
EP2287497A4 (en)	2012-01-11	Metal gasket
BRPI0816315A2 (pt)	2015-03-24	Método de conversão
HUE071401T2 (hu)	2025-08-28	Öntõberendezés lemezöntvény öntéséhez
BRPI0810416A2 (pt)	2014-10-14	Método de hidroformação
BRPI0916597A2 (pt)	2015-08-04	Método
BRPI0817780A2 (pt)	2015-03-24	Vedação de metal soldada
BRPI0814930A2 (pt)	2015-02-03	Método de solidificação de silício metálico
BRPI0915796A2 (pt)	2015-11-10	método de pagamento eletrônico
BRPI0915125A2 (pt)	2019-09-24	método de seleção ii
BRPI0922497A2 (pt)	2015-12-15	aparelho para a fusão de metal
FI20065363A0 (fi)	2006-05-30	Erotusmenetelmä
EP2055671A4 (en)	2010-12-01	METAL PHOSPHATE
BRPI0820295A2 (pt)	2015-06-16	Perfil de metal

Legal Events

Date	Code	Title	Description
2015-06-09	B11A	Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
2015-09-08	B11Y	Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired