BRPI0409603A - equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluorados - Google Patents
equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluoradosInfo
- Publication number
- BRPI0409603A BRPI0409603A BRPI0409603-7A BRPI0409603A BRPI0409603A BR PI0409603 A BRPI0409603 A BR PI0409603A BR PI0409603 A BRPI0409603 A BR PI0409603A BR PI0409603 A BRPI0409603 A BR PI0409603A
- Authority
- BR
- Brazil
- Prior art keywords
- fluorine compound
- crystal production
- production
- equipment
- crucible
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 8
- 239000013078 crystal Substances 0.000 title abstract 7
- 150000002222 fluorine compounds Chemical class 0.000 title 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000004927 fusion Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B9/00—General methods of preparing halides
- C01B9/08—Fluorides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
"EQUIPAMENTO PARA A PRODUçãO DE CRISTAIS DE COMPOSTOS FLUORADOS, CADINHO E MéTODO DE PRODUçãO DE MONOCRISTAIS DE COMPOSTOS FLUORADOS". Um equipamento para a produção para a produção de um cristal de fluoreto, que tem uma câmara., um material de janela ou similar capaz de lidar com o fluoreto é equipado com instalações necessárias para evacuação sob alto vácuo e usa um cadinho em que a porção capilar do orifício formado no seu fundo é controlada de modo tal que um cristal de semente e um material em fusão sejam facilmente contatados um com o outro e um método para produzir um cristal de fluoreto que compreende usar o equipamento. O equipamento permite a produção de um único cristal de um fluoreto tendo alta qualidade em um tempo extremamente curto com estabilidade.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003119000 | 2003-04-23 | ||
| PCT/JP2004/005917 WO2004094705A1 (ja) | 2003-04-23 | 2004-04-23 | フッ化物結晶の製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0409603A true BRPI0409603A (pt) | 2006-04-18 |
Family
ID=33308088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0409603-7A BRPI0409603A (pt) | 2003-04-23 | 2004-04-23 | equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluorados |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20070056508A1 (pt) |
| EP (1) | EP1632593B1 (pt) |
| JP (1) | JP4456071B2 (pt) |
| KR (1) | KR20060015524A (pt) |
| CN (1) | CN100465357C (pt) |
| BR (1) | BRPI0409603A (pt) |
| RU (1) | RU2005136369A (pt) |
| TW (1) | TW200505932A (pt) |
| WO (1) | WO2004094705A1 (pt) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4456071B2 (ja) * | 2003-04-23 | 2010-04-28 | ステラケミファ株式会社 | フッ化物結晶の製造装置 |
| TW200510581A (en) * | 2003-07-17 | 2005-03-16 | Stella Chemifa Corp | Method for producing crystal of fluoride |
| RU2389835C2 (ru) * | 2004-11-08 | 2010-05-20 | Тохоку Текно Арч Ко., Лтд. | Pr-СОДЕРЖАЩИЙ СЦИНТИЛЛЯЦИОННЫЙ МОНОКРИСТАЛЛ, СПОСОБ ЕГО ПОЛУЧЕНИЯ, ДЕТЕКТОР ИЗЛУЧЕНИЯ И УСТРОЙСТВО ОБСЛЕДОВАНИЯ |
| CN102026914A (zh) * | 2008-05-16 | 2011-04-20 | 株式会社德山 | 预处理金属氟化物及氟化物晶体的制造方法 |
| CN102616745B (zh) * | 2012-04-06 | 2016-12-14 | 周俊和 | 一种氟化盐生产方法 |
| CN103147119B (zh) * | 2013-03-21 | 2015-09-16 | 北京雷生强式科技有限责任公司 | 一种氟化镁晶体的制备方法及生长设备 |
| RU2599672C1 (ru) * | 2015-11-24 | 2016-10-10 | федеральное государственное автономное образовательное учреждение высшего образования "Казанский (Приволжский) федеральный университет" (ФГАОУ ВО КФУ) | Устройство для выращивания монокристаллов фторидов и способ их получения |
| CN110004493A (zh) * | 2019-02-21 | 2019-07-12 | 中国科学院上海硅酸盐研究所 | 一种钨酸镧(钆)钠晶体的生长方法 |
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| SU1592414A1 (ru) | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия |
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-
2004
- 2004-04-23 JP JP2005505807A patent/JP4456071B2/ja not_active Expired - Fee Related
- 2004-04-23 KR KR1020057020051A patent/KR20060015524A/ko not_active Withdrawn
- 2004-04-23 WO PCT/JP2004/005917 patent/WO2004094705A1/ja not_active Ceased
- 2004-04-23 EP EP04729272.7A patent/EP1632593B1/en not_active Expired - Lifetime
- 2004-04-23 BR BRPI0409603-7A patent/BRPI0409603A/pt not_active Application Discontinuation
- 2004-04-23 RU RU2005136369/15A patent/RU2005136369A/ru not_active Application Discontinuation
- 2004-04-23 US US10/554,424 patent/US20070056508A1/en not_active Abandoned
- 2004-04-23 TW TW093111405A patent/TW200505932A/zh not_active IP Right Cessation
- 2004-04-23 CN CNB2004800105351A patent/CN100465357C/zh not_active Expired - Fee Related
-
2010
- 2010-08-19 US US12/805,786 patent/US8333838B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20110000423A1 (en) | 2011-01-06 |
| EP1632593A1 (en) | 2006-03-08 |
| TW200505932A (en) | 2005-02-16 |
| CN1777708A (zh) | 2006-05-24 |
| KR20060015524A (ko) | 2006-02-17 |
| US20070056508A1 (en) | 2007-03-15 |
| JP4456071B2 (ja) | 2010-04-28 |
| WO2004094705A1 (ja) | 2004-11-04 |
| TWI335333B (pt) | 2011-01-01 |
| EP1632593A4 (en) | 2010-09-15 |
| JPWO2004094705A1 (ja) | 2006-07-13 |
| CN100465357C (zh) | 2009-03-04 |
| EP1632593B1 (en) | 2014-11-12 |
| US8333838B2 (en) | 2012-12-18 |
| RU2005136369A (ru) | 2006-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
| B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |