[go: up one dir, main page]

BR9906873A - Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados - Google Patents

Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados

Info

Publication number
BR9906873A
BR9906873A BR9906873-7A BR9906873A BR9906873A BR 9906873 A BR9906873 A BR 9906873A BR 9906873 A BR9906873 A BR 9906873A BR 9906873 A BR9906873 A BR 9906873A
Authority
BR
Brazil
Prior art keywords
pulses
substrate
micrometers
metals
electric fields
Prior art date
Application number
BR9906873-7A
Other languages
English (en)
Inventor
E Jennings Taylor
Jenny J Sun
Chengdong Zhou
Original Assignee
Faraday Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/172,299 external-priority patent/US6203684B1/en
Priority claimed from US09/239,811 external-priority patent/US6210555B1/en
Application filed by Faraday Technology Inc filed Critical Faraday Technology Inc
Publication of BR9906873A publication Critical patent/BR9906873A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H10W70/60—
    • H10W72/874—
    • H10W72/9413—
    • H10W90/10—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Patente de Invenção: "ELETRODEPOSIçãO DE METAIS EM PEQUENOS RECESSOS UTILIZANDO CAMPOS ELéTRICOS MODULADOS". Uma camada de um metal é eletrogalvanizada sobre um substrato eletricamente condutor possuindo uma superfície geralmente lisa com um pequeno recesso na mesma, possuindo uma dimensão transversal não maior do que cerca de 350 micrometros, tipicamente cerca de 5 micrometros a cerca de 350 micrometros, pela imersão do substrato e um contraeletrodo em um banho de eletrogalvanização do metal a ser eletrogalvanizado e passando uma corrente elétrica de reversão modulada entre os eletrodos. A corrente contém pulsos que são catódicos com relação ao substrato e pulsos que são anódicos com relação ao substrato. Os pulsos catódicos possuem um ciclo de trabalho menor do que cerca de 50% e os pulsos anódicos possuem um ciclo de trabalho maior do que cerca de 50%, a taxa de transferência de carga dos pulsos catódicos para os pulsos anódicos é maior do que um, e a freq³ência dos pulsos varia de cerca de 10 Hertz a cerca de 12000 Hertz.
BR9906873-7A 1998-10-14 1999-10-14 Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados BR9906873A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/172,299 US6203684B1 (en) 1998-10-14 1998-10-14 Pulse reverse electrodeposition for metallization and planarization of a semiconductor substrates
US09/239,811 US6210555B1 (en) 1999-01-29 1999-01-29 Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
PCT/US1999/023653 WO2000022193A2 (en) 1998-10-14 1999-10-14 Electrodeposition of metals in small recesses using modulated electric fields

Publications (1)

Publication Number Publication Date
BR9906873A true BR9906873A (pt) 2002-01-02

Family

ID=26867931

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9906873-7A BR9906873A (pt) 1998-10-14 1999-10-14 Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados

Country Status (10)

Country Link
US (1) US6303014B1 (pt)
EP (1) EP1070159A4 (pt)
JP (1) JP2002527621A (pt)
KR (1) KR20010033089A (pt)
CN (1) CN1180133C (pt)
AU (1) AU765242B2 (pt)
BR (1) BR9906873A (pt)
CA (1) CA2314109A1 (pt)
MX (1) MXPA00005871A (pt)
WO (1) WO2000022193A2 (pt)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878259B2 (en) * 1998-10-14 2005-04-12 Faraday Technology Marketing Group, Llc Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6582578B1 (en) 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
US6913680B1 (en) * 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
EP1337693A2 (en) 2000-05-23 2003-08-27 Applied Materials, Inc. Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
US6858121B2 (en) 2000-08-10 2005-02-22 Nutool, Inc. Method and apparatus for filling low aspect ratio cavities with conductive material at high rate
US6921551B2 (en) 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
CA2421799A1 (en) * 2000-09-18 2002-03-21 Acm Research, Inc. Integrating metal with ultra low-k dielectrics
JP2004536217A (ja) * 2000-10-03 2004-12-02 アプライド　マテリアルズ　インコーポレイテッド 金属蒸着のためのエントリーにあたって半導体基板を傾けるための方法と関連する装置
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
JP4364420B2 (ja) * 2000-10-31 2009-11-18 エスアイアイ・ナノテクノロジー株式会社 垂直エッジのサブミクロン貫通孔を形成する方法
US20040170753A1 (en) * 2000-12-18 2004-09-02 Basol Bulent M. Electrochemical mechanical processing using low temperature process environment
US7172497B2 (en) * 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US20040072423A1 (en) * 2001-01-12 2004-04-15 Jacob Jorne Methods and systems for electro-or electroless-plating of metal in high-aspect ratio features
IL141118A0 (en) * 2001-01-25 2002-02-10 Cerel Ceramics Technologies Lt A method for the implementation of electronic components in via-holes of a multi-layer multi-chip module
US20020139684A1 (en) * 2001-04-02 2002-10-03 Mitsubishi Denki Kabushiki Kaisha Plating system, plating method, method of manufacturing semiconductor device using the same, and method of manufacturing printed board using the same
US6736953B1 (en) * 2001-09-28 2004-05-18 Lsi Logic Corporation High frequency electrochemical deposition
US7426067B1 (en) 2001-12-17 2008-09-16 Regents Of The University Of Colorado Atomic layer deposition on micro-mechanical devices
US20030168344A1 (en) * 2002-03-08 2003-09-11 Applied Materials, Inc. Selective metal deposition for electrochemical plating
US6848975B2 (en) * 2002-04-09 2005-02-01 Rensselaer Polytechnic Institute Electrochemical planarization of metal feature surfaces
US20030201170A1 (en) * 2002-04-24 2003-10-30 Applied Materials, Inc. Apparatus and method for electropolishing a substrate in an electroplating cell
US6911136B2 (en) * 2002-04-29 2005-06-28 Applied Materials, Inc. Method for regulating the electrical power applied to a substrate during an immersion process
US20030201185A1 (en) * 2002-04-29 2003-10-30 Applied Materials, Inc. In-situ pre-clean for electroplating process
DE10223957B4 (de) * 2002-05-31 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht
US20040011666A1 (en) * 2002-06-12 2004-01-22 Taylor E. Jennings Electrolytic etching of metal layers
US7084509B2 (en) 2002-10-03 2006-08-01 International Business Machines Corporation Electronic package with filled blinds vias
US7553686B2 (en) * 2002-12-17 2009-06-30 The Regents Of The University Of Colorado, A Body Corporate Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices
US20040206628A1 (en) * 2003-04-18 2004-10-21 Applied Materials, Inc. Electrical bias during wafer exit from electrolyte bath
US7268075B2 (en) * 2003-05-16 2007-09-11 Intel Corporation Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm)
US20050095854A1 (en) * 2003-10-31 2005-05-05 Uzoh Cyprian E. Methods for depositing high yield and low defect density conductive films in damascene structures
US20050145506A1 (en) * 2003-12-29 2005-07-07 Taylor E. J. Electrochemical etching of circuitry for high density interconnect electronic modules
US20060207888A1 (en) * 2003-12-29 2006-09-21 Taylor E J Electrochemical etching of circuitry for high density interconnect electronic modules
US7553401B2 (en) * 2004-03-19 2009-06-30 Faraday Technology, Inc. Electroplating cell with hydrodynamics facilitating more uniform deposition across a workpiece during plating
US7947161B2 (en) * 2004-03-19 2011-05-24 Faraday Technology, Inc. Method of operating an electroplating cell with hydrodynamics facilitating more uniform deposition on a workpiece with through holes
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7626179B2 (en) * 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
KR100907841B1 (ko) * 2004-09-24 2009-07-14 이비덴 가부시키가이샤 도금 방법 및 도금 장치
US20060183321A1 (en) * 2004-09-27 2006-08-17 Basol Bulent M Method for reduction of gap fill defects
JP2006131926A (ja) * 2004-11-02 2006-05-25 Sharp Corp 微細孔に対するメッキ方法、及びこれを用いた金バンプ形成方法と半導体装置の製造方法、並びに半導体装置
US7550070B2 (en) * 2006-02-03 2009-06-23 Novellus Systems, Inc. Electrode and pad assembly for processing conductive layers
EP1839695A1 (en) * 2006-03-31 2007-10-03 Debiotech S.A. Medical liquid injection device
US7876793B2 (en) 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7732786B2 (en) 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US8500985B2 (en) 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US7732329B2 (en) * 2006-08-30 2010-06-08 Ipgrip, Llc Method and apparatus for workpiece surface modification for selective material deposition
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US20090065365A1 (en) * 2007-09-11 2009-03-12 Asm Nutool, Inc. Method and apparatus for copper electroplating
US8298384B2 (en) * 2008-01-31 2012-10-30 Century Plating Co. Method and apparatus for plating metal parts
US20120261254A1 (en) 2011-04-15 2012-10-18 Reid Jonathan D Method and apparatus for filling interconnect structures
CN102054759B (zh) * 2009-11-10 2015-10-14 中芯国际集成电路制造(上海)有限公司 铜互连结构的形成方法
EP2549089B1 (en) * 2010-03-19 2014-06-18 Honda Motor Co., Ltd. Piston for internal combustion engine
US20150053565A1 (en) * 2013-08-26 2015-02-26 Lam Research Corporation Bottom-up fill in damascene features
CN103484908B (zh) * 2013-09-29 2016-09-21 华进半导体封装先导技术研发中心有限公司 Tsv电化学沉积铜方法
CN103668370A (zh) * 2013-12-19 2014-03-26 潮州市连思科技发展有限公司 一种光盘脉冲电镀方法
CN106486415B (zh) * 2015-09-01 2020-03-31 中芯国际集成电路制造(上海)有限公司 互连结构的制造方法
SG11202005062SA (en) 2016-07-13 2020-06-29 Alligant Scientific Llc Electrochemical methods, devices and compositions
US10329683B2 (en) 2016-11-03 2019-06-25 Lam Research Corporation Process for optimizing cobalt electrofill using sacrificial oxidants
US10684522B2 (en) 2017-12-07 2020-06-16 Faraday Technology, Inc. Electrochemical mirror system and method
US11411258B2 (en) 2018-09-05 2022-08-09 Faraday Technology, Inc. Pulse reverse current high rate electrodeposition and charging while mitigating the adverse effects of dendrite formation
US11746433B2 (en) 2019-11-05 2023-09-05 Macdermid Enthone Inc. Single step electrolytic method of filling through holes in printed circuit boards and other substrates
US11203816B1 (en) * 2020-10-23 2021-12-21 Applied Materials, Inc. Electroplating seed layer buildup and repair
WO2024127636A1 (ja) * 2022-12-16 2024-06-20 株式会社荏原製作所 めっき装置およびめっき方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666567A (en) * 1981-07-31 1987-05-19 The Boeing Company Automated alternating polarity pulse electrolytic processing of electrically conductive substances
JPH06176926A (ja) * 1992-12-02 1994-06-24 Matsushita Electric Ind Co Ltd 組成変調軟磁性膜およびその製造方法
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys

Also Published As

Publication number Publication date
CN1180133C (zh) 2004-12-15
CA2314109A1 (en) 2000-04-20
US6303014B1 (en) 2001-10-16
WO2000022193A2 (en) 2000-04-20
JP2002527621A (ja) 2002-08-27
EP1070159A1 (en) 2001-01-24
MXPA00005871A (es) 2002-08-06
CN1342220A (zh) 2002-03-27
WO2000022193A3 (en) 2001-04-12
KR20010033089A (ko) 2001-04-25
EP1070159A4 (en) 2004-06-09
AU1444300A (en) 2000-05-01
AU765242B2 (en) 2003-09-11

Similar Documents

Publication Publication Date Title
BR9906873A (pt) Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados
ES2015906B3 (es) Limpieza electrolitica selectiva de recubrimientos de metal de sustratos con metal base.
ES452841A1 (es) Procedimiento de electrodeposicion de al menos un area se- leccionada de una superficie conductora.
EP0396610A1 (en) Electrochemical processes
BR9600303A (pt) Processo de revestimento da face de uma peça em alumínio ou em liga de alumínio destinada a sofrer grandes solicitações de atrito e sua aplicação
SE8306144D0 (sv) Oxidanoder for anvendning i katodiskt skydd med patryckt strom oxidanoder for anvendning i katodiskt skydd med patryckt strom
KR910004846A (ko) 팔라듐 필름의 전착
US2244620A (en) Electroplating apparatus
GB2203451B (en) Method and apparatus for making the inner crowns of composite-layered crowns for restoring crowns
BR0318331A (pt) aparelho para aplicar um eletrodepósito de zinco ou de liga de zinco a uma peça de trabalho
BR9812387A (pt) Processo de eletrogalvanização
GB625990A (en) Improvements in or relating to electroplating
US6045669A (en) Structure of electric contact of electrolytic cell
US20210371999A1 (en) Plating hanger for obtaining homogeneous plating
GB625989A (en) Improvements in or relating to electroplating
KR950032716A (ko) 전극 구조물
US3788956A (en) Electrolytic coloring of anodized aluminum
KR950000927A (ko) 비철금속 전해전착용 음극
JPS60128272A (ja) 電気防食法
JPS5789499A (en) Composite electrodeposition of boron nitride and metal
SE8603155L (sv) Forbettrat elektrolytiskt galvaniseringsforfarande
KR100257398B1 (ko) 전기 도금용 지그
KR900700552A (ko) 전기전도성 기판의 코팅방법, 이 방법으로 코팅된 기판 및 수성 전기코팅배드
CN212669827U (zh) 一种具有弹性结构的表面处理线导电连接装置
Gnanasekaran et al. Stress measurements in electrodeposited lead dioxide

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A E 7A ANUIDADES.