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BR8606541A - Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos - Google Patents

Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos

Info

Publication number
BR8606541A
BR8606541A BR8606541A BR8606541A BR8606541A BR 8606541 A BR8606541 A BR 8606541A BR 8606541 A BR8606541 A BR 8606541A BR 8606541 A BR8606541 A BR 8606541A BR 8606541 A BR8606541 A BR 8606541A
Authority
BR
Brazil
Prior art keywords
input
perfected
damage
reduce
semiconductor chip
Prior art date
Application number
BR8606541A
Other languages
English (en)
Inventor
Horst Leuschner
Original Assignee
Sgs Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Semiconductor Corp filed Critical Sgs Semiconductor Corp
Publication of BR8606541A publication Critical patent/BR8606541A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10P14/416—
    • H10W42/60—
BR8606541A 1985-04-08 1986-04-07 Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos BR8606541A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72086285A 1985-04-08 1985-04-08
PCT/US1986/000697 WO1986006213A1 (en) 1985-04-08 1986-04-07 Electrostatic discharge input protection network

Publications (1)

Publication Number Publication Date
BR8606541A true BR8606541A (pt) 1987-08-04

Family

ID=24895559

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8606541A BR8606541A (pt) 1985-04-08 1986-04-07 Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos

Country Status (7)

Country Link
US (1) US4724471A (pt)
EP (1) EP0218685B1 (pt)
JP (1) JPH0732237B2 (pt)
KR (1) KR910009931B1 (pt)
BR (1) BR8606541A (pt)
DE (2) DE218685T1 (pt)
WO (1) WO1986006213A1 (pt)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding
US4882610A (en) * 1987-10-29 1989-11-21 Deutsche Itt Industries Gmbh Protective arrangement for MOS circuits
DE3882892D1 (de) * 1987-10-29 1993-09-09 Itt Ind Gmbh Deutsche Schutzanordnung fuer mos-schaltungen.
JPH03502389A (ja) * 1988-02-02 1991-05-30 アナログ　デバイセス　インコーポレーテッド 静電損傷を減少させる手段を備えた集積回路
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US4959708A (en) * 1988-08-26 1990-09-25 Delco Electronics Corporation MOS integrated circuit with vertical shield
US5210596A (en) * 1989-06-30 1993-05-11 Texas Instruments Incorporated Thermally optimized interdigitated transistor
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
KR100206870B1 (ko) * 1995-11-28 1999-07-01 구본준 정전 방전 및 래치 업 방지회로
US5773346A (en) * 1995-12-06 1998-06-30 Micron Technology, Inc. Semiconductor processing method of forming a buried contact
US5705841A (en) * 1995-12-22 1998-01-06 Winbond Electronics Corporation Electrostatic discharge protection device for integrated circuits and its method for fabrication
US6777784B1 (en) * 2000-10-17 2004-08-17 National Semiconductor Corporation Bipolar transistor-based electrostatic discharge (ESD) protection structure with a heat sink
US6976238B1 (en) * 2001-06-03 2005-12-13 Cadence Design Systems, Inc. Circular vias and interconnect-line ends
US6801416B2 (en) * 2001-08-23 2004-10-05 Institute Of Microelectronics ESD protection system for high frequency applications
JP3753692B2 (ja) * 2002-12-20 2006-03-08 ローム株式会社 オープンドレイン用ｍｏｓｆｅｔ及びこれを用いた半導体集積回路装置
US6927458B2 (en) * 2003-08-08 2005-08-09 Conexant Systems, Inc. Ballasting MOSFETs using staggered and segmented diffusion regions
KR20100135521A (ko) * 2009-06-17 2010-12-27 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
US3740835A (en) * 1970-08-31 1973-06-26 Fairchild Camera Instr Co Method of forming semiconductor device contacts
US3777216A (en) * 1972-10-02 1973-12-04 Motorola Inc Avalanche injection input protection circuit
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置

Also Published As

Publication number Publication date
WO1986006213A1 (en) 1986-10-23
KR910009931B1 (ko) 1991-12-05
US4724471A (en) 1988-02-09
DE3688034D1 (de) 1993-04-22
EP0218685A1 (en) 1987-04-22
DE218685T1 (de) 1988-05-19
EP0218685B1 (en) 1993-03-17
EP0218685A4 (en) 1988-12-22
DE3688034T2 (de) 1993-06-24
JPH0732237B2 (ja) 1995-04-10
KR880700465A (ko) 1988-03-15
JPS62502504A (ja) 1987-09-24

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