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BR8301120A - Processo para fabricacao de tiristor com protecao contra sobretensao - Google Patents

Processo para fabricacao de tiristor com protecao contra sobretensao

Info

Publication number
BR8301120A
BR8301120A BR8301120A BR8301120A BR8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A
Authority
BR
Brazil
Prior art keywords
protection against
against overvoltage
thyristor
manufacturing
manufacturing thyristor
Prior art date
Application number
BR8301120A
Other languages
English (en)
Inventor
John X Przybysz
Richard J Fieder
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR8301120A publication Critical patent/BR8301120A/pt

Links

Classifications

    • H10P34/42—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
BR8301120A 1982-03-11 1983-03-08 Processo para fabricacao de tiristor com protecao contra sobretensao BR8301120A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35710682A 1982-03-11 1982-03-11

Publications (1)

Publication Number Publication Date
BR8301120A true BR8301120A (pt) 1983-11-22

Family

ID=23404319

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8301120A BR8301120A (pt) 1982-03-11 1983-03-08 Processo para fabricacao de tiristor com protecao contra sobretensao

Country Status (7)

Country Link
EP (1) EP0088967B1 (pt)
JP (1) JPS58166767A (pt)
BR (1) BR8301120A (pt)
CA (1) CA1191974A (pt)
DE (1) DE3374972D1 (pt)
IE (1) IE54111B1 (pt)
IN (1) IN156292B (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
EP0310836A3 (de) * 1987-10-08 1989-06-14 Siemens Aktiengesellschaft Halbleiterbauelement mit einem planaren pn-Übergang
JPH0680820B2 (ja) * 1989-10-16 1994-10-12 株式会社東芝 過電圧保護機能付半導体装置及びその製造方法
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
JPS55115364A (en) * 1979-02-28 1980-09-05 Nec Corp Manufacturing method of semiconductor device
JPS5643665A (en) * 1979-09-18 1981-04-22 Minolta Camera Co Ltd Electrophotographic receptor

Also Published As

Publication number Publication date
EP0088967B1 (en) 1987-12-16
EP0088967A2 (en) 1983-09-21
EP0088967A3 (en) 1985-12-27
IE54111B1 (en) 1989-06-21
IE830266L (en) 1983-09-11
CA1191974A (en) 1985-08-13
IN156292B (pt) 1985-06-15
JPS58166767A (ja) 1983-10-01
DE3374972D1 (en) 1988-01-28

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