BR8005483A - Dispositivo semicondutor e tiristor semicondutor - Google Patents

Dispositivo semicondutor e tiristor semicondutor

Info

Publication number: BR8005483A
Authority: BR; Brazil
Prior art keywords: semiconductor; thyristor device; thyristor; semiconductor thyristor
Prior art date: 1979-08-31

Application number

BR8005483A

Other languages

English (en)

Inventor

M Hanes

E Schlegel

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-08-31

Filing date

1980-08-29

Publication date

1981-03-10

1980-08-29 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1981-03-10 Publication of BR8005483A publication Critical patent/BR8005483A/pt

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
- H10P34/40—

BR8005483A 1979-08-31 1980-08-29 Dispositivo semicondutor e tiristor semicondutor BR8005483A (pt)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/071,631 US4291329A (en)	1979-08-31	1979-08-31	Thyristor with continuous recombination center shunt across planar emitter-base junction

Publications (1)

Publication Number	Publication Date
BR8005483A true BR8005483A (pt)	1981-03-10

Family

ID=22102555

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BR8005483A BR8005483A (pt)	1979-08-31	1980-08-29	Dispositivo semicondutor e tiristor semicondutor

Country Status (8)

Country	Link
US (1)	US4291329A (pt)
EP (1)	EP0024657B1 (pt)
JP (1)	JPS5636161A (pt)
BR (1)	BR8005483A (pt)
CA (1)	CA1141479A (pt)
DE (1)	DE3071679D1 (pt)
IE (1)	IE51962B1 (pt)
IN (1)	IN152784B (pt)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS50140640A (pt) *	1974-04-29	1975-11-11
US4311534A (en) *	1980-06-27	1982-01-19	Westinghouse Electric Corp.	Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4620211A (en) *	1984-08-13	1986-10-28	General Electric Company	Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
USH569H (en)	1984-09-28	1989-01-03	Motorola Inc.	Charge storage depletion region discharge protection
JPS62500340A (ja) *	1984-09-28	1987-02-05	モトロ−ラ・インコ−ポレ−テツド	電荷蓄積空乏領域放電保護装置及び方法
GB2213988B (en) *	1987-12-18	1992-02-05	Matsushita Electric Works Ltd	Semiconductor device
JPH07107935B2 (ja) *	1988-02-04	1995-11-15	株式会社東芝	半導体装置
US4974099A (en) *	1989-06-21	1990-11-27	International Mobile Machines Corporation	Communication signal compression system and method
US5072308A (en) *	1989-06-21	1991-12-10	International Mobile Machines Corporation	Communication signal compression system and method
US5097308A (en) *	1990-03-13	1992-03-17	General Instrument Corp.	Method for controlling the switching speed of bipolar power devices
US5049966A (en) *	1990-11-15	1991-09-17	Micron Technology, Inc.	Lateral transistor beta reduction by incorporation of electrically active material
JP3311210B2 (ja) *	1995-07-28	2002-08-05	株式会社東芝	半導体装置およびその製造方法
US6274892B1 (en) *	1998-03-09	2001-08-14	Intersil Americas Inc.	Devices formable by low temperature direct bonding
DE10316222B3 (de) *	2003-04-09	2005-01-20	eupec Europäische Gesellschaft für Leistungshalbleiter mbH	Verfahren zur Herstellung eines robusten Halbleiterbauelements und damit hergestelltes Halbleiterbauelement
JP2005340528A (ja) *	2004-05-27	2005-12-08	Fuji Electric Device Technology Co Ltd	半導体装置およびその製造方法
US8791547B2 (en)	2008-01-21	2014-07-29	Infineon Technologies Ag	Avalanche diode having an enhanced defect concentration level and method of making the same
JP6402773B2 (ja) *	2014-09-08	2018-10-10	富士電機株式会社	半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3309585A (en) *	1963-11-29	1967-03-14	Westinghouse Electric Corp	Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3442722A (en) *	1964-12-16	1969-05-06	Siemens Ag	Method of making a pnpn thyristor
US3625781A (en) *	1969-05-09	1971-12-07	Ibm	Method of reducing carrier lifetime in semiconductor structures
US3810791A (en) *	1970-08-03	1974-05-14	Texas Instruments Inc	Process for the fabrication of semiconductor materials
DE2210200A1 (de) *	1972-03-03	1973-09-06	Licentia Gmbh	Halbleiterbauelement mit eindiffundierten rekombinationszentren und verfahren zu dessen herstellung
US3888701A (en) *	1973-03-09	1975-06-10	Westinghouse Electric Corp	Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) *	1973-03-09	1976-01-20	Westinghouse Electric Corporation	Fine tuning power diodes with irradiation
US4053925A (en) *	1975-08-07	1977-10-11	Ibm Corporation	Method and structure for controllng carrier lifetime in semiconductor devices
US4056408A (en) *	1976-03-17	1977-11-01	Westinghouse Electric Corporation	Reducing the switching time of semiconductor devices by nuclear irradiation

1979
- 1979-08-31 US US06/071,631 patent/US4291329A/en not_active Expired - Lifetime
1980
- 1980-08-14 EP EP80104849A patent/EP0024657B1/en not_active Expired
- 1980-08-14 DE DE8080104849T patent/DE3071679D1/de not_active Expired
- 1980-08-27 CA CA000359146A patent/CA1141479A/en not_active Expired
- 1980-08-29 IE IE1816/80A patent/IE51962B1/en unknown
- 1980-08-29 BR BR8005483A patent/BR8005483A/pt unknown
- 1980-08-29 JP JP11855580A patent/JPS5636161A/ja active Pending
- 1980-11-01 IN IN1240/CAL/80A patent/IN152784B/en unknown

Also Published As

Publication number	Publication date
IN152784B (pt)	1984-04-07
IE51962B1 (en)	1987-05-13
CA1141479A (en)	1983-02-15
DE3071679D1 (en)	1986-09-04
US4291329A (en)	1981-09-22
EP0024657A2 (en)	1981-03-11
EP0024657B1 (en)	1986-07-30
JPS5636161A (en)	1981-04-09
EP0024657A3 (en)	1983-05-04
IE801816L (en)	1981-02-28

Publication	Publication Date	Title
BR7900229A (pt)	1979-08-14	Dispositivo semicondutor
KR840003534A (ko)	1984-09-08	반도체 장치와 그 제조 방법
SE8105257L (sv)	1982-03-09	Halvledaranordning
DE3370249D1 (de)	1987-04-16	Mis semiconductor device
DE3382802D1 (de)	1996-03-28	Halbleiterspeichergerät
BR7605585A (pt)	1978-03-21	Circuito semicondutor de retificacao
BR8005483A (pt)	1981-03-10	Dispositivo semicondutor e tiristor semicondutor
SE7900083L (sv)	1979-07-14	Halvledaranordning
BR7803561A (pt)	1979-03-20	Dispositivo e conjunto semicondutor
BR7808124A (pt)	1979-07-31	Dispositivo semicondutor
SE7701434L (sv)	1977-08-13	Halvledaranordning
BR8005816A (pt)	1981-03-24	Semicondutor de potencia
SE7701316L (sv)	1977-08-10	Halvledaranordning
MX153416A (es)	1986-10-07	Mejoras en dispositivo fotovoltaico formado de material semiconductor
BR7705488A (pt)	1978-06-06	Dispositivo semicondutor
SE7709146L (sv)	1978-02-17	Halvledaranordning
BR7702421A (pt)	1977-12-20	Transdutor semicondutor
BR7800627A (pt)	1978-10-10	Dispositivo semicondutor
SE7902980L (sv)	1979-10-08	Halvledaranordning
DE3022122A1 (de)	1980-12-18	Halbleitervorrichtung
IT1167554B (it)	1987-05-13	Dispositivo e semiconduttore planare
IT8124803A0 (it)	1981-10-30	Dispositivo semiconduttore
SE7709019L (sv)	1978-03-01	Halvledaranordning
BR8000967A (pt)	1980-10-29	Dispositivo semicondutor
KR840005919A (ko)	1984-11-19	반도체 장치