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BR0112513A - Fast switching input buffer. - Google Patents

Fast switching input buffer.

Info

Publication number
BR0112513A
BR0112513A BR0112513-3A BR0112513A BR0112513A BR 0112513 A BR0112513 A BR 0112513A BR 0112513 A BR0112513 A BR 0112513A BR 0112513 A BR0112513 A BR 0112513A
Authority
BR
Brazil
Prior art keywords
input buffer
causes
pmos transistor
fast switching
switching input
Prior art date
Application number
BR0112513-3A
Other languages
Portuguese (pt)
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of BR0112513A publication Critical patent/BR0112513A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

"BUFFER DE ENTRADA DE COMUTAçãO RáPIDA". Um circuito de buffer de entrada (300) para um dispositivo semicondutor que inclui um transistor PMOS (306), um transistor NMOS (308) e um circuito de recuperação (314). O circuito de recuperação (314) aplica uma tensão à região de massa do transistor PMOS (306) que provoca um efeito de corpo positivo que faz com que o valor absoluto do limiar de tensão do transistor PMOS (306) diminua temporariamente quando o buffer de entrada (300) comuta. Isto faz com que o buffer de entrada (300) comute mais rapidamente que buffers de entrada convencionais. O buffer de entrada (300) é um buffer de entrada inversora, NOR, NAND ou outro buffer de entrada."QUICK SWITCH INPUT BUFFER". An input buffer circuit (300) for a semiconductor device including a PMOS transistor (306), a NMOS transistor (308), and a recovery circuit (314). The recovery circuit 314 applies a voltage to the mass region of the PMOS transistor 306 which causes a positive body effect that causes the absolute value of the PMOS transistor voltage threshold 306 to temporarily decrease when the entrance (300) switches. This causes the input buffer (300) to switch faster than conventional input buffers. Input buffer (300) is an inverter input buffer, NOR, NAND, or other input buffer.

BR0112513-3A 2000-07-14 2001-06-29 Fast switching input buffer. BR0112513A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61635700A 2000-07-14 2000-07-14
PCT/US2001/020818 WO2002007317A1 (en) 2000-07-14 2001-06-29 Fast switching input buffer

Publications (1)

Publication Number Publication Date
BR0112513A true BR0112513A (en) 2003-07-01

Family

ID=24469083

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0112513-3A BR0112513A (en) 2000-07-14 2001-06-29 Fast switching input buffer.

Country Status (8)

Country Link
EP (1) EP1307965A1 (en)
JP (1) JP2004504751A (en)
KR (1) KR20030016401A (en)
CN (1) CN1441996A (en)
AU (1) AU2001271671A1 (en)
BR (1) BR0112513A (en)
TW (1) TW498617B (en)
WO (1) WO2002007317A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250795B2 (en) * 2005-03-29 2007-07-31 Promos Technologies Pte. Ltd. High-speed, low-power input buffer for integrated circuit devices
CN101795134B (en) * 2010-03-18 2011-12-21 中国科学院上海微系统与信息技术研究所 Circuit for lowering CMOS transient power consumption
WO2021220479A1 (en) * 2020-04-30 2021-11-04 株式会社ソシオネクスト Input circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644266A (en) * 1995-11-13 1997-07-01 Chen; Ming-Jer Dynamic threshold voltage scheme for low voltage CMOS inverter
KR100242997B1 (en) * 1996-12-30 2000-02-01 김영환 Low power consumption input buffer
KR100245556B1 (en) * 1997-05-27 2000-02-15 윤종용 SOI semiconductor RAM device with word line driver circuit

Also Published As

Publication number Publication date
JP2004504751A (en) 2004-02-12
CN1441996A (en) 2003-09-10
AU2001271671A1 (en) 2002-01-30
WO2002007317A1 (en) 2002-01-24
TW498617B (en) 2002-08-11
KR20030016401A (en) 2003-02-26
EP1307965A1 (en) 2003-05-07

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal acc. article 33 of ipl - extension of time limit for request of examination expired