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BR0016660A - Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória - Google Patents

Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória

Info

Publication number
BR0016660A
BR0016660A BR0016660-0A BR0016660A BR0016660A BR 0016660 A BR0016660 A BR 0016660A BR 0016660 A BR0016660 A BR 0016660A BR 0016660 A BR0016660 A BR 0016660A
Authority
BR
Brazil
Prior art keywords
transistor
forming
display
memory device
logic circuit
Prior art date
Application number
BR0016660-0A
Other languages
English (en)
Inventor
Henning Sirringhaus
Richard Henry Friend
Takeo Kawase
Original Assignee
Plastic Logic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9930217.6A external-priority patent/GB9930217D0/en
Application filed by Plastic Logic Ltd filed Critical Plastic Logic Ltd
Publication of BR0016660A publication Critical patent/BR0016660A/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10P50/287—
    • H10W20/031—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

"MéTODO PARA FORMAR UM TRANSISTOR,TRANSISTOR, E CIRCUITO LóGICO E DISPOSITIVO DE EXIBIçãO OU DE MEMóRIA". Um método para formar um transistor compreende: depositar um primeiro material proveniente de solução em um primeiro solvente para formar uma primeira camada do transistor, e subseq³entemente enquanto o primeiro material permanece solúvel no primeiro solvente, formar uma segunda camada do transistor depositando sobre o primeiro material um segundo material proveniente de solução em um segundo solvente no qual o primeiro material é substancialmente insolúvel.
BR0016660-0A 1999-12-21 2000-12-21 Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória BR0016660A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009911.9A GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
PCT/GB2000/004934 WO2001047043A1 (en) 1999-12-21 2000-12-21 Solution processed devices

Publications (1)

Publication Number Publication Date
BR0016660A true BR0016660A (pt) 2003-02-25

Family

ID=26244154

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0016660-0A BR0016660A (pt) 1999-12-21 2000-12-21 Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória

Country Status (8)

Country Link
US (2) US6905906B2 (pt)
EP (1) EP1243034A1 (pt)
JP (1) JP2003518754A (pt)
CN (1) CN100483774C (pt)
AU (1) AU781584B2 (pt)
BR (1) BR0016660A (pt)
CA (1) CA2394881A1 (pt)
WO (1) WO2001047043A1 (pt)

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US20030059975A1 (en) 2003-03-27
US6905906B2 (en) 2005-06-14
US7635857B2 (en) 2009-12-22
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US20050274986A1 (en) 2005-12-15
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AU781584B2 (en) 2005-06-02
EP1243034A1 (en) 2002-09-25

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