BE832890A - Dispositif a semi-conducteur - Google Patents

Dispositif a semi-conducteur

Info

Publication number: BE832890A
Authority: BE; Belgium
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1974-09-03

Application number

BE159584A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-09-03

Filing date

1975-08-29

Publication date

1975-12-16

1975-08-29 Application filed filed Critical

1975-12-16 Publication of BE832890A publication Critical patent/BE832890A/fr

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D64/0116—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
- H10P14/40—

BE159584A 1974-09-03 1975-08-29 Dispositif a semi-conducteur BE832890A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/502,451 US3965279A (en)	1974-09-03	1974-09-03	Ohmic contacts for group III-V n-type semiconductors

Publications (1)

Publication Number	Publication Date
BE832890A true BE832890A (fr)	1975-12-16

Family

ID=23997889

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE159584A BE832890A (fr)	1974-09-03	1975-08-29	Dispositif a semi-conducteur

Country Status (9)

Country	Link
US (1)	US3965279A (fr)
JP (1)	JPS6016096B2 (fr)
BE (1)	BE832890A (fr)
CA (1)	CA1022690A (fr)
DE (1)	DE2538600C2 (fr)
FR (1)	FR2284191A1 (fr)
GB (1)	GB1514795A (fr)
IT (1)	IT1047152B (fr)
NL (1)	NL7510327A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2550512A1 (de) *	1975-11-11	1977-05-12	Bosch Gmbh Robert	Verfahren zur herstellung einer metallisierung auf einem substrat
JPS5928376A (ja) *	1982-08-09	1984-02-15	Hitachi Ltd	半導体装置およびその製造方法
JPS59186379A (ja) *	1983-04-07	1984-10-23	Nec Corp	化合物半導体装置の製造方法
CA1270931A (fr) *	1984-06-15	1990-06-26	Jun Takada	Convertisseur photoelectrique en couches minces insensible a la chaleur comportant une couche anti-diffusion
US4529619A (en) *	1984-07-16	1985-07-16	Xerox Corporation	Ohmic contacts for hydrogenated amorphous silicon
US4766093A (en) *	1984-07-30	1988-08-23	International Business Machines Corp.	Chemically formed self-aligned structure and wave guide
JP2893723B2 (ja) *	1988-06-13	1999-05-24	住友電気工業株式会社	オーミック電極の製造方法
JPH03167877A (ja) *	1989-11-28	1991-07-19	Sumitomo Electric Ind Ltd	ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US6555457B1 (en)	2000-04-07	2003-04-29	Triquint Technology Holding Co.	Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
US6955978B1 (en) *	2001-12-20	2005-10-18	Fairchild Semiconductor Corporation	Uniform contact
TWI291232B (en) *	2006-01-03	2007-12-11	Univ Nat Chiao Tung	Copper metalized ohmic contact electrode of compound semiconductor device
US20100012175A1 (en)	2008-07-16	2010-01-21	Emcore Solar Power, Inc.	Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
WO2009151979A2 (fr) *	2008-06-09	2009-12-17	4Power, Llc	Structures et procédés pour cellules solaires à haut rendement
US20110132445A1 (en) *	2009-05-29	2011-06-09	Pitera Arthur J	High-efficiency multi-junction solar cell structures
US8604330B1 (en)	2010-12-06	2013-12-10	4Power, Llc	High-efficiency solar-cell arrays with integrated devices and methods for forming them

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE634311A (fr) *	1962-06-29
US3239376A (en) *	1962-06-29	1966-03-08	Bell Telephone Labor Inc	Electrodes to semiconductor wafers
US3371255A (en) *	1965-06-09	1968-02-27	Texas Instruments Inc	Gallium arsenide semiconductor device and contact alloy therefor
US3523222A (en) *	1966-09-15	1970-08-04	Texas Instruments Inc	Semiconductive contacts
US3518749A (en) *	1968-02-23	1970-07-07	Rca Corp	Method of making gunn-effect devices
US3567508A (en) *	1968-10-31	1971-03-02	Gen Electric	Low temperature-high vacuum contact formation process
US3686539A (en) *	1970-05-04	1972-08-22	Rca Corp	Gallium arsenide semiconductor device with improved ohmic electrode
US3684930A (en) *	1970-12-28	1972-08-15	Gen Electric	Ohmic contact for group iii-v p-types semiconductors
US3728785A (en) *	1971-04-15	1973-04-24	Monsanto Co	Fabrication of semiconductor devices
US3890699A (en) *	1974-06-04	1975-06-24	Us Army	Method of making an ohmic contact to a semiconductor material

1974
- 1974-09-03 US US05/502,451 patent/US3965279A/en not_active Expired - Lifetime
1975
- 1975-07-22 CA CA232,046A patent/CA1022690A/fr not_active Expired
- 1975-08-29 JP JP50104166A patent/JPS6016096B2/ja not_active Expired
- 1975-08-29 BE BE159584A patent/BE832890A/fr unknown
- 1975-08-29 GB GB35662/75A patent/GB1514795A/en not_active Expired
- 1975-08-29 DE DE2538600A patent/DE2538600C2/de not_active Expired
- 1975-09-01 IT IT69178/75A patent/IT1047152B/it active
- 1975-09-02 FR FR7526896A patent/FR2284191A1/fr active Granted
- 1975-09-02 NL NL7510327A patent/NL7510327A/xx not_active Application Discontinuation

Also Published As

Publication number	Publication date
DE2538600C2 (de)	1984-09-13
GB1514795A (en)	1978-06-21
JPS5150665A (en)	1976-05-04
NL7510327A (nl)	1976-03-05
US3965279A (en)	1976-06-22
CA1022690A (fr)	1977-12-13
FR2284191A1 (fr)	1976-04-02
DE2538600A1 (de)	1976-03-11
JPS6016096B2 (ja)	1985-04-23
FR2284191B1 (fr)	1978-03-17
IT1047152B (it)	1980-09-10

Publication	Publication Date	Title
FR2288398A1 (fr)	1976-05-14	Dispositif photoelectrique a semi-conducteur
BE821077A (fr)	1975-02-03	Dispositif electro-generateur
FR2296855A1 (fr)	1976-07-30	Dispositif magnetosensible
FR2300372A1 (fr)	1976-09-03	Dispositif assura
IT1034720B (it)	1979-10-10	Dispositivo semiconduttore
FR2282853A1 (fr)	1976-03-26	Dispositif contraceptif
NL7513483A (nl)	1976-05-24	Geintegreerde halfgeleiderinrichting.
NL182524C (nl)	1988-03-16	Lichtgevoelige halfgeleiderinrichting.
FR2281836A1 (fr)	1976-03-12	Dispositif marqueur
FR2334172B1 (fr)	1984-03-23	Dispositif semi-conducteur
BE836855A (fr)	1976-04-16	Dispositif a recolte
IT1044592B (it)	1980-03-31	Dispositivo semiconduttor
BE829146A (fr)	1975-09-01	Dispositif a bobines
BE832890A (fr)	1975-12-16	Dispositif a semi-conducteur
IT1028249B (it)	1979-01-30	Dispositivo a semiconduttori
IT1037228B (it)	1979-11-10	Dispositivo semiconduttore
BE861272A (fr)	1978-03-16	Dispositif a semi-conducteurs
FR2282721A1 (fr)	1976-03-19	Dispositif semi-conducteur
SE7506878L (sv)	1975-12-19	Halvledaranordning.
FR2287772A1 (fr)	1976-05-07	Dispositif semi-conducteur
IT1036988B (it)	1979-10-30	Disositivo a girante
FR2286510A1 (fr)	1976-04-23	Dispositif semi-conducteur a heterostructure double
NL185485C (nl)	1990-04-17	Halfgeleiderinrichting.
SE7505941L (sv)	1975-12-01	Halvledaranordning
FR2289835A1 (fr)	1976-05-28	Dispositif de raccordement