[go: up one dir, main page]

BE827022A - Procede de fabrication de dispositifs semi-conducteurs - Google Patents

Procede de fabrication de dispositifs semi-conducteurs

Info

Publication number
BE827022A
BE827022A BE154625A BE154625A BE827022A BE 827022 A BE827022 A BE 827022A BE 154625 A BE154625 A BE 154625A BE 154625 A BE154625 A BE 154625A BE 827022 A BE827022 A BE 827022A
Authority
BE
Belgium
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
BE154625A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE827022A publication Critical patent/BE827022A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10P50/691—
    • H10W40/10—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
BE154625A 1974-06-28 1975-03-21 Procede de fabrication de dispositifs semi-conducteurs BE827022A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US484084A US3897627A (en) 1974-06-28 1974-06-28 Method for manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
BE827022A true BE827022A (fr) 1975-07-16

Family

ID=23922675

Family Applications (1)

Application Number Title Priority Date Filing Date
BE154625A BE827022A (fr) 1974-06-28 1975-03-21 Procede de fabrication de dispositifs semi-conducteurs

Country Status (7)

Country Link
US (1) US3897627A (de)
JP (1) JPS531630B2 (de)
BE (1) BE827022A (de)
DE (1) DE2511925A1 (de)
FR (1) FR2276692A1 (de)
GB (1) GB1476585A (de)
IT (1) IT1032591B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023260A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4080722A (en) * 1976-03-22 1978-03-28 Rca Corporation Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink
FR2420208A1 (fr) * 1978-03-17 1979-10-12 Thomson Csf Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee
US4237600A (en) * 1978-11-16 1980-12-09 Rca Corporation Method for fabricating stacked semiconductor diodes for high power/low loss applications
US4384400A (en) * 1979-12-06 1983-05-24 The United States Of America As Represented By The Secretary Of The Army Method of fabricating monolithically interconnected series-parallel avalanche diodes
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
DE3211391A1 (de) * 1982-03-27 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
US4605919A (en) * 1982-10-04 1986-08-12 Becton, Dickinson And Company Piezoresistive transducer
US4498229A (en) * 1982-10-04 1985-02-12 Becton, Dickinson And Company Piezoresistive transducer
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100287919B1 (ko) * 1992-01-06 2001-05-02 사토 게니치로 더미 패턴을 갖는 반도체 칩
JP2836334B2 (ja) * 1992-01-23 1998-12-14 三菱電機株式会社 高出力半導体装置の製造方法
US5580831A (en) * 1993-07-28 1996-12-03 Fujitsu Limited Sawcut method of forming alignment marks on two faces of a substrate
US5413659A (en) * 1993-09-30 1995-05-09 Minnesota Mining And Manufacturing Company Array of conductive pathways
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
JPH09172223A (ja) * 1995-12-19 1997-06-30 Sony Corp 半導体装置と半導体装置の製造方法
DE19710375C2 (de) * 1997-03-13 2002-11-07 Micronas Semiconductor Holding Verfahren zum Herstellen von räumlich strukturierten Bauteilen
CN101373807B (zh) * 2003-09-19 2010-06-09 霆激技术有限公司 半导体器件上导电金属层的制作
TWI228272B (en) * 2003-09-19 2005-02-21 Tinggi Technologies Pte Ltd Fabrication of semiconductor devices
US20050133891A1 (en) * 2003-12-23 2005-06-23 Tessera, Inc. System and method for increasing the ball pitch of an electronic circuit package
US8039363B2 (en) * 2003-12-23 2011-10-18 Tessera, Inc. Small chips with fan-out leads
JP2007535804A (ja) * 2004-03-15 2007-12-06 ティンギ テクノロジーズ プライベート リミテッド 半導体デバイスの製造
JP2007533133A (ja) * 2004-04-07 2007-11-15 ティンギ テクノロジーズ プライベート リミテッド 半導体発光ダイオード上での反射層の作製
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) * 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US7759201B2 (en) 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US7713818B2 (en) 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US7981592B2 (en) * 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
US7786015B2 (en) 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
US8026178B2 (en) 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
DE102012111358A1 (de) 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820236A (en) * 1969-06-20 1974-06-28 Texas Instruments Inc Method of making metal semiconductor diodes having plated heat sink members
FR2100997B1 (de) * 1970-08-04 1973-12-21 Silec Semi Conducteurs
US3720997A (en) * 1971-01-11 1973-03-20 Motorola Inc Eutectic plating and breaking silicon wafers
BE791930A (fr) * 1971-12-02 1973-03-16 Western Electric Co Dispositif electroluminescent et procede pour sa fabrication

Also Published As

Publication number Publication date
DE2511925A1 (de) 1976-01-15
GB1476585A (en) 1977-06-16
US3897627A (en) 1975-08-05
JPS531630B2 (de) 1978-01-20
IT1032591B (it) 1979-06-20
JPS50131459A (de) 1975-10-17
FR2276692A1 (fr) 1976-01-23

Similar Documents

Publication Publication Date Title
FR2276692A1 (fr) Procede de fabrication de dispositifs semiconducteurs
BE822852A (fr) Dispositifs semi-conducteurs stabilises en procede de fabrication
FR2288392A1 (fr) Procede de realisation de dispositifs semiconducteurs
BE831681R (fr) Procede de fabrication de structures en relief
FR2280979A1 (fr) Structure de semi-conducteur et procede de fabrication
BE824967A (fr) Procede de fabrication de modules thermoelectriques
FR2006784A1 (fr) Procede de fabrication de dispositifs a semi-conducteurs
BE832839A (fr) Structure a semi-conducteur et procede pour sa fabrication
BE785150A (fr) Procede pour la fabrication de dispositifs semiconducteurs
FR2276698A1 (fr) Procede de fabrication de film cristallin
FR2339954A1 (fr) Procede de fabrication de dispositifs mos
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
BE792908A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE803528A (fr) Procede de fabrication de dispositifs semi-conducteurs
FR2282162A1 (fr) Procede de realisation de dispositifs semiconducteurs
BE831914A (fr) Procede de fabrication de cetones
BE786889A (fr) Procede de fabrication de dispositifs a semi-conducteurs
BE778430A (fr) Procede de fabrication de dispositifs
FR2287461A1 (fr) Procede de fabrication de polyetherpolyols
BE779087A (fr) Procede de fabrication de dispositifs a avalanche
BE824681A (fr) Procede de fabrication de 7-amino-cephemes
BE835413A (fr) Procede de fabrication de nitronaphtalenes
FR2332801A1 (fr) Procede de fabrication de dispositifs semi-conducteurs
FR2291968A1 (fr) Procede de fabrication de la tetramethyl-ethylene diamine
FR2282164A1 (fr) Procede de realisation de dispositifs a semi-conducteur