AU5150298A - Tunable dielectric flip chip varactors - Google Patents
Tunable dielectric flip chip varactorsInfo
- Publication number
- AU5150298A AU5150298A AU51502/98A AU5150298A AU5150298A AU 5150298 A AU5150298 A AU 5150298A AU 51502/98 A AU51502/98 A AU 51502/98A AU 5150298 A AU5150298 A AU 5150298A AU 5150298 A AU5150298 A AU 5150298A
- Authority
- AU
- Australia
- Prior art keywords
- flip chip
- tunable dielectric
- varactors
- chip varactors
- tunable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
- H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2916296P | 1996-10-25 | 1996-10-25 | |
| US60029162 | 1996-10-25 | ||
| PCT/US1997/019334 WO1998020606A2 (en) | 1996-10-25 | 1997-10-24 | Tunable dielectric flip chip varactors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU5150298A true AU5150298A (en) | 1998-05-29 |
Family
ID=21847580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU51502/98A Abandoned AU5150298A (en) | 1996-10-25 | 1997-10-24 | Tunable dielectric flip chip varactors |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1002340A2 (en) |
| AU (1) | AU5150298A (en) |
| WO (1) | WO1998020606A2 (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001033660A1 (en) * | 1999-11-04 | 2001-05-10 | Paratek Microwave, Inc. | Microstrip tunable filters tuned by dielectric varactors |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US6404614B1 (en) | 2000-05-02 | 2002-06-11 | Paratek Microwave, Inc. | Voltage tuned dielectric varactors with bottom electrodes |
| EP1290733A1 (en) | 2000-05-31 | 2003-03-12 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
| WO2002009187A2 (en) | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US6686817B2 (en) | 2000-12-12 | 2004-02-03 | Paratek Microwave, Inc. | Electronic tunable filters with dielectric varactors |
| WO2002056417A2 (en) * | 2001-01-11 | 2002-07-18 | Motorola, Inc. | Tunable structure utilizing a compliant substrate |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2812405B2 (en) * | 1991-03-15 | 1998-10-22 | 信越半導体株式会社 | Semiconductor substrate manufacturing method |
| US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
| US5283462A (en) * | 1991-11-04 | 1994-02-01 | Motorola, Inc. | Integrated distributed inductive-capacitive network |
| US5472935A (en) * | 1992-12-01 | 1995-12-05 | Yandrofski; Robert M. | Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films |
| US5538941A (en) * | 1994-02-28 | 1996-07-23 | University Of Maryland | Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device |
| US5640042A (en) * | 1995-12-14 | 1997-06-17 | The United States Of America As Represented By The Secretary Of The Army | Thin film ferroelectric varactor |
| AU3580897A (en) * | 1996-06-28 | 1998-01-21 | Superconducting Core Technologies, Inc. | Near resonant cavity tuning devices |
-
1997
- 1997-10-24 EP EP97946303A patent/EP1002340A2/en not_active Withdrawn
- 1997-10-24 AU AU51502/98A patent/AU5150298A/en not_active Abandoned
- 1997-10-24 WO PCT/US1997/019334 patent/WO1998020606A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP1002340A4 (en) | 2000-05-24 |
| EP1002340A2 (en) | 2000-05-24 |
| WO1998020606A2 (en) | 1998-05-14 |
| WO1998020606A3 (en) | 1998-06-25 |
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