AU2697592A - A monolithic optocoupler - Google Patents
A monolithic optocouplerInfo
- Publication number
- AU2697592A AU2697592A AU26975/92A AU2697592A AU2697592A AU 2697592 A AU2697592 A AU 2697592A AU 26975/92 A AU26975/92 A AU 26975/92A AU 2697592 A AU2697592 A AU 2697592A AU 2697592 A AU2697592 A AU 2697592A
- Authority
- AU
- Australia
- Prior art keywords
- optocoupler
- monolithic
- monolithic optocoupler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9102844 | 1991-10-01 | ||
| SE9102844A SE469204B (en) | 1991-10-01 | 1991-10-01 | MONOLITIC RECORDER |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2697592A true AU2697592A (en) | 1993-05-03 |
Family
ID=20383878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU26975/92A Abandoned AU2697592A (en) | 1991-10-01 | 1992-08-24 | A monolithic optocoupler |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2697592A (en) |
| SE (1) | SE469204B (en) |
| WO (1) | WO1993007647A1 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2344455A (en) | 1998-12-01 | 2000-06-07 | Mitel Semiconductor Ab | Semiconductor device with low parasitic capacitance |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| EP1290733A1 (en) | 2000-05-31 | 2003-03-12 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
| WO2002009187A2 (en) | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| GB2426628B (en) * | 2004-02-05 | 2008-04-02 | Otkrytoe Aktsionernoe Obschest | Photoluminescent radiator, semiconductor photocell and optron based thereon |
| RU2261502C1 (en) * | 2004-02-05 | 2005-09-27 | Открытое акционерное общество "Научно-исследовательский институт ГИРИКОНД" | Photo-luminescent emitter, semiconductor element and optron based on said devices |
| RU2642132C1 (en) * | 2016-07-20 | 2018-01-24 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" | Optoelectronic device |
| WO2023061669A1 (en) | 2021-10-15 | 2023-04-20 | Ams-Osram International Gmbh | Optoelectronic device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
| US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
| US4275404A (en) * | 1979-10-05 | 1981-06-23 | Bell Telephone Laboratories, Incorporated | Monolithic opto-isolator |
| SE461491B (en) * | 1987-12-02 | 1990-02-19 | Asea Ab | MONOLITIC RECORDER |
-
1991
- 1991-10-01 SE SE9102844A patent/SE469204B/en not_active IP Right Cessation
-
1992
- 1992-08-24 AU AU26975/92A patent/AU2697592A/en not_active Abandoned
- 1992-08-24 WO PCT/SE1992/000580 patent/WO1993007647A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993007647A1 (en) | 1993-04-15 |
| SE469204B (en) | 1993-05-24 |
| SE9102844L (en) | 1993-04-02 |
| SE9102844D0 (en) | 1991-10-01 |
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