[go: up one dir, main page]

AU2003303677A1 - Composition and method used for chemical mechanical planarization of metals - Google Patents

Composition and method used for chemical mechanical planarization of metals

Info

Publication number
AU2003303677A1
AU2003303677A1 AU2003303677A AU2003303677A AU2003303677A1 AU 2003303677 A1 AU2003303677 A1 AU 2003303677A1 AU 2003303677 A AU2003303677 A AU 2003303677A AU 2003303677 A AU2003303677 A AU 2003303677A AU 2003303677 A1 AU2003303677 A1 AU 2003303677A1
Authority
AU
Australia
Prior art keywords
metals
composition
method used
chemical mechanical
mechanical planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003303677A
Inventor
Song Y. Chang
Mark Evans
Stephen W. Hymes
Dnyanesh Tamboli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of AU2003303677A1 publication Critical patent/AU2003303677A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • H10P52/403
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • H10W20/062

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Catalysts (AREA)
  • Removal Of Specific Substances (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AU2003303677A 2003-01-03 2003-12-29 Composition and method used for chemical mechanical planarization of metals Abandoned AU2003303677A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43782603P 2003-01-03 2003-01-03
US60/437,826 2003-01-03
US10/744,285 2003-12-23
US10/744,285 US20040175942A1 (en) 2003-01-03 2003-12-23 Composition and method used for chemical mechanical planarization of metals
PCT/US2003/041291 WO2004063301A1 (en) 2003-01-03 2003-12-29 Composition and method used for chemical mechanical planarization of metals

Publications (1)

Publication Number Publication Date
AU2003303677A1 true AU2003303677A1 (en) 2004-08-10

Family

ID=32717930

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003303677A Abandoned AU2003303677A1 (en) 2003-01-03 2003-12-29 Composition and method used for chemical mechanical planarization of metals

Country Status (6)

Country Link
US (3) US20040175942A1 (en)
KR (2) KR101366879B1 (en)
CN (1) CN1735670B (en)
AU (1) AU2003303677A1 (en)
TW (1) TWI348492B (en)
WO (1) WO2004063301A1 (en)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040216388A1 (en) * 2003-03-17 2004-11-04 Sharad Mathur Slurry compositions for use in a chemical-mechanical planarization process
US7087529B2 (en) 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
US20050277262A1 (en) * 2004-06-14 2005-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing isolation structures in a semiconductor device
US7112123B2 (en) 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US7223156B2 (en) 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
US7371685B2 (en) * 2004-03-03 2008-05-13 Intel Corporation Low stress barrier layer removal
JP2006179845A (en) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd Polishing liquid for metal and polishing method
CN101116197B (en) * 2004-12-06 2010-05-12 株式会社半导体能源研究所 Composite material comprising organic compound and inorganic compound, light-emitting element and light-emitting device using the composite compound, and method for manufacturing the light-emitting element
US7081041B1 (en) 2005-02-28 2006-07-25 Hitachi Global Storage Technologies Netherlands B.V. Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer
EP1702965A3 (en) * 2005-03-17 2007-07-25 FUJIFILM Corporation Metal chemical mechanical polishing solution and polishing method
JP2006269600A (en) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd Chemical mechanical polishing method and polishing liquid used therefor
JP2007095841A (en) * 2005-09-27 2007-04-12 Fujifilm Corp Chemical mechanical polishing method
CN101283441B (en) * 2005-10-12 2011-07-20 日立化成工业株式会社 Polishing slurry for CMP and polishing method
KR20070088245A (en) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 Polishing liquid for metal
JP2007257811A (en) * 2006-03-24 2007-10-04 Hoya Corp Method for manufacturing glass substrate for magnetic disk and method for manufacturing magnetic disk
US7977121B2 (en) * 2006-11-17 2011-07-12 Air Products And Chemicals, Inc. Method and composition for restoring dielectric properties of porous dielectric materials
DE102007008279A1 (en) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Ceria and phyllosilicate-containing dispersion
US8634162B2 (en) * 2007-03-08 2014-01-21 HGST Netherlands B.V. Perpendicular write head having a stepped flare structure and method of manufacture thereof
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
DE102007062571A1 (en) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceria and phyllosilicate-containing dispersion
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
CN101525563B (en) * 2008-03-03 2011-04-13 盟智科技股份有限公司 Corrosion Inhibitors for Post Grinding Cleaners
DE102008002321A1 (en) * 2008-06-10 2009-12-17 Evonik Degussa Gmbh Cerium oxide and particulate additive containing dispersion
JP4930641B2 (en) * 2009-02-16 2012-05-16 日立化成工業株式会社 Abrasive for polishing copper and polishing method using the same
WO2010092865A1 (en) 2009-02-16 2010-08-19 日立化成工業株式会社 Abrading agent and abrading method
US8747687B2 (en) 2009-05-06 2014-06-10 Basf Se Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
EP2427523B1 (en) 2009-05-06 2015-10-28 Basf Se An aqueous metal polishing agent comprising a polymeric abrasive containing pendant functional groups and its use in a cmp process
KR101751553B1 (en) 2009-06-30 2017-06-27 바스프 에스이 Aqueous alkaline cleaning compositions and methods of their use
US8192644B2 (en) * 2009-10-16 2012-06-05 Fujifilm Planar Solutions, LLC Highly dilutable polishing concentrates and slurries
US9255214B2 (en) 2009-11-13 2016-02-09 Basf Se Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles
US10392531B2 (en) 2009-11-30 2019-08-27 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
EP2507332A4 (en) 2009-11-30 2017-08-02 Basf Se Process for removing bulk material layer from substrate and chemical mechanical polishing agent suitable for this process
CN102782067B (en) 2010-02-24 2015-08-05 巴斯夫欧洲公司 Moisture rumbling compound and graft copolymer and the purposes in the method for polishing patterned and not structurized metallic surface thereof
RU2578718C2 (en) 2010-07-19 2016-03-27 Басф Се Aqueous alkaline cleaning compositions and methods for use thereof
TWI598434B (en) 2010-09-08 2017-09-11 巴斯夫歐洲公司 Water-abrasive composition containing N-substituted diazenium dioxide salt and/or N'-hydroxy-diazenium oxide salt
US20130161285A1 (en) 2010-09-08 2013-06-27 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
WO2012032451A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
TWI521028B (en) 2010-10-05 2016-02-11 巴斯夫歐洲公司 Chemical mechanical polishing composition comprising a specific heteropoly acid
RU2589482C2 (en) 2010-10-07 2016-07-10 Басф Се Aqueous polishing composition and method for chemical-mechanical polishing of substrates, having structured or unstructured dielectric layers with low dielectric constant
CN102477261B (en) * 2010-11-26 2015-06-17 安集微电子(上海)有限公司 Chemically mechanical polishing liquid
CN102477258B (en) * 2010-11-26 2015-05-27 安集微电子(上海)有限公司 Chemically mechanical polishing liquid
US8288283B2 (en) * 2010-12-07 2012-10-16 Texas Instruments Incorporated Aluminum enhanced palladium CMP process
SG190334A1 (en) 2010-12-10 2013-06-28 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
WO2012123839A1 (en) 2011-03-11 2012-09-20 Basf Se Method for forming through-base wafer vias
KR101925272B1 (en) 2011-03-21 2019-02-27 바스프 에스이 Aqueous, nitrogen-free cleaning composition, preparation and use thereof
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
US10407594B2 (en) 2011-03-22 2019-09-10 Basf Se Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine
EP2502969A1 (en) 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
US9443739B2 (en) 2011-08-01 2016-09-13 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition comprising a specific organic compound
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
KR20140059230A (en) 2011-09-07 2014-05-15 바스프 에스이 A chemical mechanical polishing (cmp) composition comprising a glycoside
EP2568024A1 (en) 2011-09-07 2013-03-13 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
CN103998547A (en) 2011-12-21 2014-08-20 巴斯夫欧洲公司 Chemical mechanical polishing composition comprising polyvinylphosphonic acid and derivatives thereof
WO2013093556A1 (en) 2011-12-21 2013-06-27 Basf Se Method for manufacturing cmp composition and application thereof
US9777192B2 (en) 2012-02-10 2017-10-03 Basf Se Chemical mechanical polishing (CMP) composition comprising a protein
EP2662885A1 (en) 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
EP2666833A1 (en) 2012-05-23 2013-11-27 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant
CN104364331A (en) 2012-05-23 2015-02-18 巴斯夫欧洲公司 Method of manufacturing a semiconductor device comprising chemical mechanical polishing of III-V materials in the presence of a chemical mechanical polishing composition comprising a specific nonionic surfactant
US8980750B2 (en) 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt
EP2682441A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
EP2682440A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
JP2016524325A (en) 2013-05-15 2016-08-12 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Method of using a chemical mechanical polishing (CMP) composition for polishing a substrate or layer containing at least one III-V material
JP2016522855A (en) 2013-05-15 2016-08-04 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Chemical mechanical polishing composition comprising one or more polymers selected from the group consisting of N-vinyl homopolymers and N-vinyl copolymers
US20160009955A1 (en) 2013-05-15 2016-01-14 Basf Se Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid
WO2014184703A2 (en) 2013-05-15 2014-11-20 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP2016529700A (en) 2013-07-11 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Chemical mechanical polishing composition containing a benzotriazole derivative as a corrosion inhibitor
CN103487602B (en) * 2013-08-26 2016-03-30 清华大学 The anatomic method of integrated circuit (IC) chip
SG11201700255UA (en) * 2014-07-15 2017-02-27 Basf Se A chemical mechanical polishing (cmp) composition
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
JP6804435B2 (en) 2014-08-11 2020-12-23 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se Chemical mechanical polishing composition containing organic / inorganic composite particles
US10227506B2 (en) 2014-12-16 2019-03-12 Basf Se Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium
US11286402B2 (en) 2014-12-22 2022-03-29 Basf Se Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates
TWI775722B (en) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates
US10738219B2 (en) 2014-12-22 2020-08-11 Basf Se Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates
US9978609B2 (en) 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
CN107922787B (en) 2015-08-12 2021-06-29 巴斯夫欧洲公司 Use of chemical mechanical polishing (CMP) compositions for polishing cobalt-containing substrates
KR102402730B1 (en) 2016-03-22 2022-05-26 바스프 에스이 Use of Chemical Mechanical Polishing (CMP) Compositions for Polishing Cobalt and/or Cobalt Alloy Comprising Substrates
WO2017186283A1 (en) 2016-04-27 2017-11-02 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
EP3516002B1 (en) * 2016-09-23 2022-01-05 Saint-Gobain Ceramics & Plastics, Inc. Chemical mechanical planarization slurry and method for forming same
KR102740456B1 (en) 2016-11-29 2024-12-06 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US11401441B2 (en) 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US10465096B2 (en) 2017-08-24 2019-11-05 Versum Materials Us, Llc Metal chemical mechanical planarization (CMP) composition and methods therefore
US10497692B2 (en) * 2017-08-29 2019-12-03 Globalfoundries Inc. SRAM structure with alternate gate pitches
CN111356747A (en) 2017-11-22 2020-06-30 巴斯夫欧洲公司 Chemical mechanical polishing composition
KR102343437B1 (en) * 2018-11-16 2021-12-24 삼성에스디아이 주식회사 Cmp slurry composition for amorphous carbon layer and method for polishing using the same
US20200277514A1 (en) 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235357A (en) * 1985-08-09 1987-02-16 Tokyo Ohka Kogyo Co Ltd Removing solution for photoresist
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (en) * 1994-07-12 2003-04-14 株式会社東芝 Abrasive and polishing method
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
KR100302671B1 (en) * 1996-07-25 2001-09-22 피. 제리 코더 Chemical mechanical polishing composition and process
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5891205A (en) * 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (en) * 1997-10-31 2003-01-27 株式会社日立製作所 Polishing method
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
WO2001012739A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
TW499471B (en) * 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
JP4075247B2 (en) * 1999-09-30 2008-04-16 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6258721B1 (en) * 1999-12-27 2001-07-10 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
JP2001187878A (en) * 1999-12-28 2001-07-10 Nec Corp Slurry for chemical mechanical polishing
JP4078787B2 (en) * 2000-03-31 2008-04-23 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing
JP3837277B2 (en) * 2000-06-30 2006-10-25 株式会社東芝 Chemical mechanical polishing aqueous dispersion for use in polishing copper and chemical mechanical polishing method
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20020173221A1 (en) * 2001-03-14 2002-11-21 Applied Materials, Inc. Method and apparatus for two-step polishing
JP4945857B2 (en) * 2001-06-13 2012-06-06 Jsr株式会社 Polishing pad cleaning composition and polishing pad cleaning method
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP4456308B2 (en) * 2001-12-05 2010-04-28 富士通マイクロエレクトロニクス株式会社 Chemical supply device
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7456105B1 (en) * 2002-12-17 2008-11-25 Amd, Inc. CMP metal polishing slurry and process with reduced solids concentration
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor

Also Published As

Publication number Publication date
US20040175942A1 (en) 2004-09-09
US20160079084A1 (en) 2016-03-17
TW200508373A (en) 2005-03-01
TWI348492B (en) 2011-09-11
CN1735670A (en) 2006-02-15
US20080254629A1 (en) 2008-10-16
KR101167306B1 (en) 2012-07-19
KR101366879B1 (en) 2014-02-24
US10373842B2 (en) 2019-08-06
WO2004063301A1 (en) 2004-07-29
KR20050111315A (en) 2005-11-24
KR20120061981A (en) 2012-06-13
CN1735670B (en) 2012-06-27
US20170372918A9 (en) 2017-12-28

Similar Documents

Publication Publication Date Title
AU2003303677A1 (en) Composition and method used for chemical mechanical planarization of metals
TWI367241B (en) Improved chemical mechanical polishing compositions for copper and associated materials and method of using same
TWI367242B (en) Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
AU2002326636A1 (en) Improved chemical mechanical polishing compositions for metal and associated materials and method of using same
EP1362670B8 (en) Method and apparatus for chemical mechanical polishing
PL1761462T3 (en) Method of synthesizing hybrid metal oxide materials and applications thereof
AU2003303727A1 (en) Method of expediting insurance claims
PL1512324T3 (en) Method of deflavoring soy-derived materials
AU2003242397A1 (en) Polishing fluid for metal and polishing method
AU2003277596A1 (en) Method of deuterization
SG119226A1 (en) Chemical mechanical abrasive slurry and method of using the same
AU2003235840A1 (en) Method for surface preparation of solid substances and surface-prepared solid substances
GB0428214D0 (en) Polishing composition and polishing method
AU2003269126A1 (en) Method of combining materials
AU2003275505A1 (en) Electowinning of metals
GB2421736B (en) Method and composition for cleaning metals
PL378289A1 (en) Method and composition for creation of conversion surface
AU2003219947A1 (en) Compositions and methods for hydroxylating epothilones
AU2003244116A1 (en) Method of gas carburizing
AU2003282593A1 (en) Polyphenolamine composition and method of use
AU2003288762A1 (en) Method and apparatus of hemorheometer
EP1689915A4 (en) Apparatus and method for the reduction of metals
AU2002367888A1 (en) Chemical surface treatment method of piston
AU2003901551A0 (en) Means and method of providing localised cooling
AU2003216979A1 (en) Corrosion testing of metals

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase