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AU2003226367A1 - Electropolishing and electroplating methods - Google Patents

Electropolishing and electroplating methods

Info

Publication number
AU2003226367A1
AU2003226367A1 AU2003226367A AU2003226367A AU2003226367A1 AU 2003226367 A1 AU2003226367 A1 AU 2003226367A1 AU 2003226367 A AU2003226367 A AU 2003226367A AU 2003226367 A AU2003226367 A AU 2003226367A AU 2003226367 A1 AU2003226367 A1 AU 2003226367A1
Authority
AU
Australia
Prior art keywords
electropolishing
electroplating methods
electroplating
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003226367A
Other versions
AU2003226367A8 (en
Inventor
Hui Wang
Jian Wang
Huiquan Wu
Peihaur Yih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Inc
Original Assignee
ACM Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACM Research Inc filed Critical ACM Research Inc
Publication of AU2003226367A8 publication Critical patent/AU2003226367A8/en
Publication of AU2003226367A1 publication Critical patent/AU2003226367A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H10P14/46—
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H10P14/47—
    • H10P52/00—
    • H10W20/056—
    • H10W20/062—
    • H10W20/077—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2003226367A 2002-04-12 2003-04-11 Electropolishing and electroplating methods Abandoned AU2003226367A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US37226302P 2002-04-12 2002-04-12
US60/372,263 2002-04-12
US38213302P 2002-05-21 2002-05-21
US60/382,133 2002-05-21
US38782602P 2002-06-08 2002-06-08
US60/387,826 2002-06-08
US39831602P 2002-07-24 2002-07-24
US60/398,316 2002-07-24
PCT/US2003/011417 WO2003088316A2 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods

Publications (2)

Publication Number Publication Date
AU2003226367A8 AU2003226367A8 (en) 2003-10-27
AU2003226367A1 true AU2003226367A1 (en) 2003-10-27

Family

ID=29255582

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003226367A Abandoned AU2003226367A1 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods

Country Status (9)

Country Link
US (1) US20060049056A1 (en)
EP (1) EP1495161A4 (en)
JP (2) JP2005522587A (en)
KR (1) KR20040097337A (en)
CN (1) CN1685086B (en)
AU (1) AU2003226367A1 (en)
CA (1) CA2479873A1 (en)
TW (1) TWI267134B (en)
WO (1) WO2003088316A2 (en)

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US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
JP4540981B2 (en) * 2003-12-25 2010-09-08 株式会社荏原製作所 Plating method
JP4155218B2 (en) * 2004-03-30 2008-09-24 株式会社島津製作所 Autosampler
US20050275944A1 (en) * 2004-06-11 2005-12-15 Wang Jian J Optical films and methods of making the same
DE102004021926A1 (en) 2004-05-04 2005-12-01 Mtu Aero Engines Gmbh A method of making a coating and anode for use in such a method
US7309653B2 (en) * 2005-02-24 2007-12-18 International Business Machines Corporation Method of forming damascene filament wires and the structure so formed
US7541213B2 (en) * 2006-07-21 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100826784B1 (en) * 2006-08-03 2008-04-30 동부일렉트로닉스 주식회사 Metal wiring formation method of semiconductor device
US7837841B2 (en) * 2007-03-15 2010-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
WO2010022969A1 (en) * 2008-08-29 2010-03-04 Advanced Micro Devices, Inc. Using a cap layer in metallization systems of semiconductor devices as a cmp and etch stop layer
DE102008044988A1 (en) * 2008-08-29 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Use of a capping layer in metallization systems of semiconductor devices as CMP and etch stop layer
DE102009036221A1 (en) * 2009-08-05 2011-02-17 Extrude Hone Gmbh Method for the electrochemical machining of a workpiece
CN102412233A (en) * 2011-05-23 2012-04-11 上海华力微电子有限公司 Testing structure capable of effectively testing shallow trench isolation filling capability
US9416459B2 (en) * 2011-06-06 2016-08-16 United Microelectronics Corp. Electrical chemical plating process
CN103077923B (en) * 2013-01-14 2015-06-17 武汉新芯集成电路制造有限公司 Copper electroplating method capable of avoiding holes
US20140277392A1 (en) * 2013-03-14 2014-09-18 Abbott Cardiovascular Systems, Inc. Electropolishing of alloys containing platinum and other precious metals
TWI488198B (en) * 2013-08-02 2015-06-11 Cyntec Co Ltd Method of manufacturing multi-layer coil
US9618664B2 (en) * 2015-04-15 2017-04-11 Finisar Corporation Partially etched phase-transforming optical element
CN106567130A (en) * 2015-10-10 2017-04-19 盛美半导体设备（上海）有限公司 Method for improving roughness of wafers
US10539723B2 (en) 2016-10-19 2020-01-21 Finisar Corporation Phase-transforming optical reflector formed by partial etching or by partial etching with reflow
US9875958B1 (en) 2016-11-09 2018-01-23 International Business Machines Corporation Trace/via hybrid structure and method of manufacture
KR101755203B1 (en) * 2016-11-11 2017-07-10 일진머티리얼즈 주식회사 Electrolytic Copper Foil for secondary battery and manufacturing method thereof
AT519430A1 (en) 2016-12-09 2018-06-15 Hirtenberger Eng Surfaces Gmbh ELECTROCHEMICAL PULSE POLISHING
US10109410B2 (en) 2017-01-17 2018-10-23 Palo Alto Research Center Incorporated Out of plane structures and methods for making out of plane structures
KR102275458B1 (en) 2018-11-30 2021-07-13 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Electrochemical plating system and method of using
CN109385651A (en) * 2018-12-05 2019-02-26 上海华力集成电路制造有限公司 The method of the groove of copper filling
WO2020206492A1 (en) 2019-04-09 2020-10-15 3DM Biomedical Pty Ltd Electropolishing method
US10950519B2 (en) 2019-05-31 2021-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and method
EP3754052B1 (en) 2019-06-21 2025-06-11 Infineon Technologies AG Roughening of a metallization layer on a semiconductor wafer
JP7353121B2 (en) 2019-10-08 2023-09-29 キヤノン株式会社 Semiconductor devices and equipment
JP7594974B2 (en) * 2021-05-20 2024-12-05 Tdk株式会社 Semiconductor device and manufacturing method thereof
CN118326466B (en) * 2024-06-12 2024-08-16 深圳市联合蓝海应用材料科技股份有限公司 Method for improving thermal conductivity of back hole of compound semiconductor device and corresponding product

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EP1019954B1 (en) * 1998-02-04 2013-05-15 Applied Materials, Inc. Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
CA2334015C (en) * 1998-06-04 2008-08-26 Dsm N.V. High-strength polyethylene fibres and process for producing the same
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US6074544A (en) * 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6946065B1 (en) * 1998-10-26 2005-09-20 Novellus Systems, Inc. Process for electroplating metal into microscopic recessed features
US6793796B2 (en) * 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US6605348B1 (en) * 1999-08-11 2003-08-12 Toyo Boseki Kabushiki Kaisha High strength polyethylene fibers and their applications
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
US6261963B1 (en) * 2000-07-07 2001-07-17 Advanced Micro Devices, Inc. Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices
US6858121B2 (en) * 2000-08-10 2005-02-22 Nutool, Inc. Method and apparatus for filling low aspect ratio cavities with conductive material at high rate
DE60129160T2 (en) * 2000-12-11 2008-03-06 Toyo Boseki K.K. HIGH STRENGTH POLYETHYLENE FIBER
US6432821B1 (en) * 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating
US6946066B2 (en) * 2001-07-20 2005-09-20 Asm Nutool, Inc. Multi step electrodeposition process for reducing defects and minimizing film thickness
US6638863B2 (en) * 2001-04-24 2003-10-28 Acm Research, Inc. Electropolishing metal layers on wafers having trenches or vias with dummy structures
JP4389142B2 (en) * 2001-08-08 2009-12-24 東洋紡績株式会社 Method for producing high-strength polyethylene fiber

Also Published As

Publication number Publication date
AU2003226367A8 (en) 2003-10-27
EP1495161A4 (en) 2006-06-28
CN1685086A (en) 2005-10-19
WO2003088316A3 (en) 2003-12-31
KR20040097337A (en) 2004-11-17
EP1495161A2 (en) 2005-01-12
JP2005522587A (en) 2005-07-28
TW200402781A (en) 2004-02-16
JP2006200043A (en) 2006-08-03
US20060049056A1 (en) 2006-03-09
TWI267134B (en) 2006-11-21
CN1685086B (en) 2010-10-13
WO2003088316A2 (en) 2003-10-23
CA2479873A1 (en) 2003-10-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase