AU2002351206A1 - Lateral lubistor structure and method - Google Patents

Lateral lubistor structure and method

Info

Publication number: AU2002351206A1
Authority: AU; Australia
Prior art keywords: lateral; lubistor; lubistor structure; lateral lubistor
Prior art date: 2002-12-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2002351206A

Inventor

Jack Mandelman

Steven H. Voldman

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-12-03

Filing date

2002-12-03

Publication date

2004-06-23

2002-12-03 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

2004-06-23 Publication of AU2002351206A1 publication Critical patent/AU2002351206A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H10D30/6218—Fin field-effect transistors [FinFET] of the accumulation type
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

AU2002351206A 2002-12-03 2002-12-03 Lateral lubistor structure and method Abandoned AU2002351206A1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/US2002/038546 WO2004051749A1 (en)	2002-12-03	2002-12-03	Lateral lubistor structure and method

Publications (1)

Publication Number	Publication Date
AU2002351206A1 true AU2002351206A1 (en)	2004-06-23

Family

ID=32467120

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2002351206A Abandoned AU2002351206A1 (en)	2002-12-03	2002-12-03	Lateral lubistor structure and method

Country Status (5)

Country	Link
EP (1)	EP1599904A4 (en)
JP (1)	JP2006522460A (en)
CN (1)	CN100459119C (en)
AU (1)	AU2002351206A1 (en)
WO (1)	WO2004051749A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102005007822B4 (en)	2005-02-21	2014-05-22	Infineon Technologies Ag	Integrated circuit arrangement with tunnel field effect transistor
DE102005022763B4 (en)	2005-05-18	2018-02-01	Infineon Technologies Ag	Electronic circuit arrangement and method for producing an electronic circuit
DE102005039365B4 (en)	2005-08-19	2022-02-10	Infineon Technologies Ag	Gate-controlled fin resistive element operating as a pinch - resistor for use as an ESD protection element in an electrical circuit and a device for protecting against electrostatic discharges in an electrical circuit
CN100449783C (en) *	2005-11-29	2009-01-07	台湾积体电路制造股份有限公司	Fin field effect transistor with body contact window and manufacturing method thereof
DE102006022105B4 (en) *	2006-05-11	2012-03-08	Infineon Technologies Ag	ESD protection element and ESD protection device for use in an electrical circuit
DE102006023429B4 (en)	2006-05-18	2011-03-10	Infineon Technologies Ag	ESD protection element for use in an electrical circuit
US7456471B2 (en) *	2006-09-15	2008-11-25	International Business Machines Corporation	Field effect transistor with raised source/drain fin straps
EP2117045A1 (en) *	2008-05-09	2009-11-11	Imec	Design Methodology for MuGFET ESD Protection Devices
US8232603B2 (en) *	2009-03-19	2012-07-31	International Business Machines Corporation	Gated diode structure and method including relaxed liner
CN102683418B (en) *	2012-05-22	2014-11-26	清华大学	FINFET dynamic random access memory unit and processing method thereof
US8785968B2 (en) *	2012-10-08	2014-07-22	Intel Mobile Communications GmbH	Silicon controlled rectifier (SCR) device for bulk FinFET technology
US9209265B2 (en) *	2012-11-15	2015-12-08	Taiwan Semiconductor Manufacturing Company, Ltd.	ESD devices comprising semiconductor fins
US9093492B2 (en)	2012-11-29	2015-07-28	Taiwan Semiconductor Manufacturing Company, Ltd.	Diode structure compatible with FinFET process
CN104124153B (en) *	2013-04-28	2016-08-31	中芯国际集成电路制造(上海)有限公司	Fin bipolar junction transistor and forming method thereof
US9601607B2 (en) *	2013-11-27	2017-03-21	Qualcomm Incorporated	Dual mode transistor
CN107369710B (en) *	2016-05-12	2020-06-09	中芯国际集成电路制造(上海)有限公司	Gate-controlled diode and method of forming the same
CN107492569B (en) *	2016-06-12	2020-02-07	中芯国际集成电路制造(上海)有限公司	Gated diode and method of forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4037140A (en) *	1976-04-14	1977-07-19	Rca Corporation	Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4282556A (en) *	1979-05-21	1981-08-04	Rca Corporation	Input protection device for insulated gate field effect transistor
JPH0425175A (en) *	1990-05-21	1992-01-28	Canon Inc	diode
US5610790A (en) *	1995-01-20	1997-03-11	Xilinx, Inc.	Method and structure for providing ESD protection for silicon on insulator integrated circuits
JPH10125801A (en) *	1996-09-06	1998-05-15	Mitsubishi Electric Corp	Semiconductor integrated circuit device
US5952695A (en) *	1997-03-05	1999-09-14	International Business Machines Corporation	Silicon-on-insulator and CMOS-on-SOI double film structures
US6413802B1 (en) *	2000-10-23	2002-07-02	The Regents Of The University Of California	Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6894324B2 (en) *	2001-02-15	2005-05-17	United Microelectronics Corp.	Silicon-on-insulator diodes and ESD protection circuits

2002
- 2002-12-03 AU AU2002351206A patent/AU2002351206A1/en not_active Abandoned
- 2002-12-03 EP EP02786852A patent/EP1599904A4/en not_active Ceased
- 2002-12-03 CN CNB028299787A patent/CN100459119C/en not_active Expired - Lifetime
- 2002-12-03 JP JP2004557083A patent/JP2006522460A/en active Pending
- 2002-12-03 WO PCT/US2002/038546 patent/WO2004051749A1/en not_active Ceased

Also Published As

Publication number	Publication date
CN1695245A (en)	2005-11-09
EP1599904A4 (en)	2006-04-26
CN100459119C (en)	2009-02-04
JP2006522460A (en)	2006-09-28
EP1599904A1 (en)	2005-11-30
WO2004051749A1 (en)	2004-06-17

Publication	Publication Date	Title
AU2003244310A1 (en)	2004-03-11	Inter-authentication method and device
AU2003248675A1 (en)	2003-12-31	Gaming system and method
AU2003297037A1 (en)	2004-07-29	Illuminant and method
AU2003282478A1 (en)	2004-05-04	Discount-instrument methods and systems
AU2003270593A1 (en)	2004-04-30	Devices and methods for improving vision
AU2003226094A1 (en)	2003-10-13	Compounds and methods
AU2003268369A1 (en)	2004-04-19	Performance monitor and method therefor
AU2002351206A1 (en)	2004-06-23	Lateral lubistor structure and method
AU2003235214A1 (en)	2003-12-02	Ad market system and method
AU2003258070A1 (en)	2004-02-23	Electrodionization method
AU2003212404A1 (en)	2003-10-08	Method and arrangement for assembly
AU2003253830A1 (en)	2004-02-02	Application modification system and method
AU2003247449A1 (en)	2003-12-19	Nano-ceramics and method thereof
AU2003280796A1 (en)	2004-06-18	Cable and cable identificating method
AU2002257312A1 (en)	2003-07-30	Offer system and method
AU2003223719A1 (en)	2004-01-19	Interconnect structure and method for forming
AU2002347417A1 (en)	2004-05-13	Space-dyeing method and apparatus
AU2003281708A1 (en)	2004-02-16	Method for manufactuing varistor and varistor
AU2003226145A1 (en)	2004-04-19	Gauge and method
AU2003281386A1 (en)	2004-01-23	Advertising method and means
AU2003269543A1 (en)	2004-05-04	Block fabrication method and construction method
AU2003278754A1 (en)	2004-03-11	Motocycle lift bar and method
AU2003276398A1 (en)	2003-12-31	Shearwall structure and method of making the same
AU2003266601A1 (en)	2004-04-19	Connection method and connection device
AU2003302173A1 (en)	2004-07-14	Spirotetrathiocarbamates and spirooxothiocarbamates

Legal Events

Date	Code	Title	Description
2005-08-18	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase