AU2003208560A1 - Esd-robust power switch and method of using same - Google Patents

Esd-robust power switch and method of using same

Info

Publication number: AU2003208560A1
Authority: AU; Australia
Prior art keywords: esd; same; power switch; robust power; robust
Prior art date: 2002-04-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003208560A

Inventor

Jan Dikken

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Koninklijke Philips Electronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-04-29

Filing date

2003-03-20

Publication date

2003-11-17

2003-03-20 Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV

2003-11-17 Publication of AU2003208560A1 publication Critical patent/AU2003208560A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

AU2003208560A 2002-04-29 2003-03-20 Esd-robust power switch and method of using same Abandoned AU2003208560A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
EP02076695.2		2002-04-29
EP02076695		2002-04-29
PCT/IB2003/001091 WO2003094242A1 (en)	2002-04-29	2003-03-20	Esd-robust power switch and method of using same

Publications (1)

Publication Number	Publication Date
AU2003208560A1 true AU2003208560A1 (en)	2003-11-17

Family

ID=29286175

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003208560A Abandoned AU2003208560A1 (en)	2002-04-29	2003-03-20	Esd-robust power switch and method of using same

Country Status (2)

Country	Link
AU (1)	AU2003208560A1 (en)
WO (1)	WO2003094242A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6984853B2 (en) *	2004-02-26	2006-01-10	Agilent Technologies, Inc	Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection
EP2400552A1 (en)	2010-06-24	2011-12-28	Dialog Semiconductor GmbH	Mos transistor structure with easy access to all nodes
TW201209997A (en) *	2010-08-16	2012-03-01	Fortune Semiconductor Corp	Layout of power MOSFET
EP2937906A1 (en)	2014-04-24	2015-10-28	Nxp B.V.	Semiconductor ESD device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3355817B2 (en) *	1994-10-20	2002-12-09	株式会社デンソー	Semiconductor device
US6002156A (en) *	1997-09-16	1999-12-14	Winbond Electronics Corp.	Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
US5955763A (en) *	1997-09-16	1999-09-21	Winbond Electronics Corp.	Low noise, high current-drive MOSFET structure for uniform serpentine-shaped poly-gate turn-on during an ESD event
US6274896B1 (en) *	2000-01-14	2001-08-14	Lexmark International, Inc.	Drive transistor with fold gate

2003
- 2003-03-20 AU AU2003208560A patent/AU2003208560A1/en not_active Abandoned
- 2003-03-20 WO PCT/IB2003/001091 patent/WO2003094242A1/en not_active Ceased

Also Published As

Publication number	Publication date
WO2003094242A1 (en)	2003-11-13

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Legal Events

Date	Code	Title	Description
2005-01-13	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase