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AU2003290515A8 - Low temperature salicide forming materials and sputtering targets formed therefrom - Google Patents

Low temperature salicide forming materials and sputtering targets formed therefrom

Info

Publication number
AU2003290515A8
AU2003290515A8 AU2003290515A AU2003290515A AU2003290515A8 AU 2003290515 A8 AU2003290515 A8 AU 2003290515A8 AU 2003290515 A AU2003290515 A AU 2003290515A AU 2003290515 A AU2003290515 A AU 2003290515A AU 2003290515 A8 AU2003290515 A8 AU 2003290515A8
Authority
AU
Australia
Prior art keywords
low temperature
forming materials
formed therefrom
sputtering targets
targets formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003290515A
Other versions
AU2003290515A1 (en
Inventor
Brian Daniels
Stephen P Turner
Michael A Thomas
Eal H Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003290515A1 publication Critical patent/AU2003290515A1/en
Publication of AU2003290515A8 publication Critical patent/AU2003290515A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2003290515A 2002-08-06 2003-08-06 Low temperature salicide forming materials and sputtering targets formed therefrom Abandoned AU2003290515A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40165302P 2002-08-06 2002-08-06
US60/401,653 2002-08-06
PCT/US2003/024968 WO2004032184A2 (en) 2002-08-06 2003-08-06 Low temperature salicide forming materials and sputtering targets formed therefrom

Publications (2)

Publication Number Publication Date
AU2003290515A1 AU2003290515A1 (en) 2004-04-23
AU2003290515A8 true AU2003290515A8 (en) 2004-04-23

Family

ID=32069655

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003290515A Abandoned AU2003290515A1 (en) 2002-08-06 2003-08-06 Low temperature salicide forming materials and sputtering targets formed therefrom

Country Status (3)

Country Link
AU (1) AU2003290515A1 (en)
TW (1) TW200407443A (en)
WO (1) WO2004032184A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426506B2 (en) 2019-07-19 2025-09-23 Evatec Ag Piezoelectric coating and deposition process
JP7639809B2 (en) * 2020-03-26 2025-03-05 東ソー株式会社 Cr-Si sintered body, sputtering target, and method for producing thin film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886585A (en) * 1973-07-02 1975-05-27 Gen Motors Corp Solderable multilayer contact for silicon semiconductor
DE3608559A1 (en) * 1986-03-14 1987-09-17 Kernforschungsanlage Juelich METHOD FOR JOINING SIC MOLDED PARTS WITH CERAMIC OR METAL AND FOR TREATING SISIC SURFACES, AND AN ALLOY ALLOY
DE3717246A1 (en) * 1986-05-23 1987-11-26 Mitsubishi Electric Corp NICKEL-BASED MATERIAL FOR A SEMICONDUCTOR ARRANGEMENT
WO1999025892A1 (en) * 1997-11-19 1999-05-27 Tosoh Smd, Inc. METHOD FOR MAKING Ni-Si MAGNETRON SPUTTERING TARGETS AND TARGETS MADE THEREBY

Also Published As

Publication number Publication date
WO2004032184A2 (en) 2004-04-15
AU2003290515A1 (en) 2004-04-23
WO2004032184B1 (en) 2005-01-27
WO2004032184A9 (en) 2004-10-21
TW200407443A (en) 2004-05-16
WO2004032184A3 (en) 2004-06-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase