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AU2003275086A1 - Packaged rf power transistor having rf bypassing/output matching network - Google Patents

Packaged rf power transistor having rf bypassing/output matching network

Info

Publication number
AU2003275086A1
AU2003275086A1 AU2003275086A AU2003275086A AU2003275086A1 AU 2003275086 A1 AU2003275086 A1 AU 2003275086A1 AU 2003275086 A AU2003275086 A AU 2003275086A AU 2003275086 A AU2003275086 A AU 2003275086A AU 2003275086 A1 AU2003275086 A1 AU 2003275086A1
Authority
AU
Australia
Prior art keywords
bypassing
packaged
power transistor
matching network
output matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003275086A
Other versions
AU2003275086A8 (en
Inventor
Jr. Emil James Crescenzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cree Microwave LLC
Original Assignee
Cree Microwave LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Microwave LLC filed Critical Cree Microwave LLC
Publication of AU2003275086A8 publication Critical patent/AU2003275086A8/en
Publication of AU2003275086A1 publication Critical patent/AU2003275086A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H10W44/20—
    • H10W44/231—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
AU2003275086A 2002-09-30 2003-09-17 Packaged rf power transistor having rf bypassing/output matching network Abandoned AU2003275086A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/262,217 2002-09-30
US10/262,217 US6822321B2 (en) 2002-09-30 2002-09-30 Packaged RF power transistor having RF bypassing/output matching network
PCT/US2003/029719 WO2004032188A2 (en) 2002-09-30 2003-09-17 Packaged rf power transistor having rf bypassing/output matching network

Publications (2)

Publication Number Publication Date
AU2003275086A8 AU2003275086A8 (en) 2004-04-23
AU2003275086A1 true AU2003275086A1 (en) 2004-04-23

Family

ID=32030167

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003275086A Abandoned AU2003275086A1 (en) 2002-09-30 2003-09-17 Packaged rf power transistor having rf bypassing/output matching network

Country Status (7)

Country Link
US (1) US6822321B2 (en)
EP (1) EP1547394B1 (en)
JP (1) JP5009500B2 (en)
CN (1) CN1701613B (en)
AU (1) AU2003275086A1 (en)
TW (1) TWI318455B (en)
WO (1) WO2004032188A2 (en)

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US20060138650A1 (en) * 2004-12-28 2006-06-29 Freescale Semiconductor, Inc. Integrated circuit packaging device and method for matching impedance
US7193473B2 (en) * 2005-03-24 2007-03-20 Cree, Inc. High power Doherty amplifier using multi-stage modules
US7372334B2 (en) 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7564303B2 (en) * 2005-07-26 2009-07-21 Infineon Technologies Ag Semiconductor power device and RF signal amplifier
US7378920B2 (en) * 2006-02-14 2008-05-27 Freescale Semiconductor, Inc. Methods and apparatus for a high-frequency output match circuit
EP2013943B1 (en) * 2006-04-26 2020-03-25 Ampleon Netherlands B.V. A high power integrated rf amplifier
US20080231373A1 (en) * 2007-03-20 2008-09-25 Hafizur Rahman Output Circuit
US8592966B2 (en) * 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
JP5030228B2 (en) * 2007-11-30 2012-09-19 矢崎総業株式会社 Electrical junction box
US9041470B2 (en) * 2008-04-22 2015-05-26 Freescale Semiconductor, Inc. Wireless communication unit and semiconductor device having a power amplifier therefor
US7948312B2 (en) * 2009-05-13 2011-05-24 Qualcomm, Incorporated Multi-bit class-D power amplifier system
US8536950B2 (en) * 2009-08-03 2013-09-17 Qualcomm Incorporated Multi-stage impedance matching
US8102205B2 (en) 2009-08-04 2012-01-24 Qualcomm, Incorporated Amplifier module with multiple operating modes
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
EP2388815A1 (en) * 2010-05-10 2011-11-23 Nxp B.V. A transistor package
USD668658S1 (en) * 2011-11-15 2012-10-09 Connectblue Ab Module
USD689053S1 (en) * 2011-11-15 2013-09-03 Connectblue Ab Module
USD668659S1 (en) * 2011-11-15 2012-10-09 Connectblue Ab Module
USD692896S1 (en) * 2011-11-15 2013-11-05 Connectblue Ab Module
USD680119S1 (en) * 2011-11-15 2013-04-16 Connectblue Ab Module
USD680545S1 (en) * 2011-11-15 2013-04-23 Connectblue Ab Module
US9281283B2 (en) 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
EP2802075B1 (en) 2013-05-07 2017-02-15 Ampleon Netherlands B.V. Dual-band semiconductor RF amplifier device
EP2830089B1 (en) * 2013-07-25 2017-07-12 Ampleon Netherlands B.V. RF power device
US9979388B2 (en) 2013-11-07 2018-05-22 Nxp Usa, Inc. Adjustable losses of bond wire arrangement
EP3113360A4 (en) * 2014-03-21 2017-03-08 Huawei Technologies Co., Ltd. Power amplification circuit and transmitter
US9641163B2 (en) 2014-05-28 2017-05-02 Cree, Inc. Bandwidth limiting methods for GaN power transistors
US9472480B2 (en) 2014-05-28 2016-10-18 Cree, Inc. Over-mold packaging for wide band-gap semiconductor devices
US9515011B2 (en) 2014-05-28 2016-12-06 Cree, Inc. Over-mold plastic packaged wide band-gap power transistors and MMICS
US9438184B2 (en) 2014-06-27 2016-09-06 Freescale Semiconductor, Inc. Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
CN105322895B (en) * 2015-05-06 2018-11-09 苏州能讯高能半导体有限公司 Matching power tube and the power amplifier module based on the power tube in a kind of biasing is adaptive
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof
US9692363B2 (en) * 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
CN106206524B (en) * 2016-07-07 2019-01-22 昆山华太电子技术有限公司 A packaging tube shell
US10270402B1 (en) * 2017-11-30 2019-04-23 Nxp Usa, Inc. Broadband input matching and video bandwidth circuits for power amplifiers
US10673386B2 (en) * 2017-12-05 2020-06-02 Nxp Usa, Inc. Wideband power amplifiers with harmonic traps
US10566938B1 (en) * 2018-12-11 2020-02-18 Nxp Usa, Inc. System and method for providing isolation of bias signal from RF signal in integrated circuit
CN111510085B (en) * 2020-05-12 2023-06-23 苏州远创达科技有限公司 Output circuit of power amplifier
US12183669B2 (en) 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
US12417966B2 (en) * 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same
US12230614B2 (en) 2021-12-17 2025-02-18 Macom Technology Solutions Holdings, Inc. Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
CN120934465B (en) * 2025-10-16 2025-12-26 成都屿西半导体科技有限公司 Radio frequency microwave amplifier for expanding modulation bandwidth

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US6081160A (en) * 1998-05-20 2000-06-27 Powerwave Technologies, Inc. Method and apparatus for increasing the bandwidth, and reducing the size, of the DC feed network for wideband RF amplifiers using selective placement of high dielectric constant material
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JP4163818B2 (en) * 1999-07-07 2008-10-08 三菱電機株式会社 Internally matched transistor
US20020050851A1 (en) * 1999-12-22 2002-05-02 Grundlingh Johan M. Method and apparatus for biasing radio frequency power transistors
JP4256575B2 (en) * 2000-08-15 2009-04-22 パナソニック株式会社 RF passive circuit and RF amplifier with via hole
JP2002176368A (en) * 2001-07-11 2002-06-21 Nec Corp Transmission power controller capable of controlling optimization of bias current of transmission output amplifier

Also Published As

Publication number Publication date
JP2006501678A (en) 2006-01-12
TW200408128A (en) 2004-05-16
US20040061214A1 (en) 2004-04-01
TWI318455B (en) 2009-12-11
CN1701613A (en) 2005-11-23
EP1547394A2 (en) 2005-06-29
JP5009500B2 (en) 2012-08-22
EP1547394B1 (en) 2016-07-27
WO2004032188A3 (en) 2004-06-17
EP1547394A4 (en) 2006-09-20
AU2003275086A8 (en) 2004-04-23
US6822321B2 (en) 2004-11-23
CN1701613B (en) 2010-10-13
WO2004032188A2 (en) 2004-04-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase