AU2002337297A1 - Lateral semiconductor-on-insulator structure and corresponding manufacturing methods - Google Patents

Lateral semiconductor-on-insulator structure and corresponding manufacturing methods

Info

Publication number: AU2002337297A1
Authority: AU; Australia
Prior art keywords: manufacturing methods; insulator structure; corresponding manufacturing; lateral semiconductor; lateral
Prior art date: 2001-10-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2002337297A

Inventor

Florin Udrea

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Cambridge Semiconductor Ltd

Original Assignee

Cambridge Semiconductor Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-10-23

Filing date

2002-10-21

Publication date

2003-05-06

2002-10-21 Application filed by Cambridge Semiconductor Ltd filed Critical Cambridge Semiconductor Ltd

2003-05-06 Publication of AU2002337297A1 publication Critical patent/AU2002337297A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H10P90/1904—
- H10P90/1914—
- H10W10/181—
- H10P14/2903—
- H10P14/2904—
- H10P14/2905—
- H10P14/3208—
- H10P14/3238—
- H10P14/3248—
- H10P14/3411—
- H10P14/3421—

AU2002337297A 2001-10-23 2002-10-21 Lateral semiconductor-on-insulator structure and corresponding manufacturing methods Abandoned AU2002337297A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US33050601P	2001-10-23	2001-10-23
US60/330,506		2001-10-23
PCT/GB2002/004738 WO2003036699A2 (en)	2001-10-23	2002-10-21	Lateral semiconductor-on-insulator structure and corresponding manufacturing methods

Publications (1)

Publication Number	Publication Date
AU2002337297A1 true AU2002337297A1 (en)	2003-05-06

Family

ID=23290061

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2002337297A Abandoned AU2002337297A1 (en)	2001-10-23	2002-10-21	Lateral semiconductor-on-insulator structure and corresponding manufacturing methods

Country Status (2)

Country	Link
AU (1)	AU2002337297A1 (en)
WO (1)	WO2003036699A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7033912B2 (en)	2004-01-22	2006-04-25	Cree, Inc.	Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en)	2004-02-05	2009-11-03	Cree, Inc.	Heterojunction transistors including energy barriers
US7594075B2 (en) *	2004-10-20	2009-09-22	Seagate Technology Llc	Metadata for a grid based data storage system
US7560322B2 (en) *	2004-10-27	2009-07-14	Northrop Grumman Systems Corporation	Method of making a semiconductor structure for high power semiconductor devices
JP5017926B2 (en) *	2005-09-28	2012-09-05	株式会社デンソー	Semiconductor device and manufacturing method thereof
US7592211B2 (en)	2006-01-17	2009-09-22	Cree, Inc.	Methods of fabricating transistors including supported gate electrodes
US20130154049A1 (en) *	2011-06-22	2013-06-20	George IMTHURN	Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology
US10290702B2 (en)	2012-07-31	2019-05-14	Silanna Asia Pte Ltd	Power device on bulk substrate
EP2880688B1 (en) *	2012-07-31	2020-07-15	Silanna Asia Pte Ltd.	Power device integration on a common substrate
US9412881B2 (en)	2012-07-31	2016-08-09	Silanna Asia Pte Ltd	Power device integration on a common substrate
CN104425257A (en) *	2013-08-30	2015-03-18	无锡华润上华半导体有限公司	Insulated gate bipolar transistor and manufacturing method thereof
US10083897B2 (en)	2017-02-20	2018-09-25	Silanna Asia Pte Ltd	Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
US9923059B1 (en)	2017-02-20	2018-03-20	Silanna Asia Pte Ltd	Connection arrangements for integrated lateral diffusion field effect transistors
FR3079662B1 (en) *	2018-03-30	2020-02-28	Soitec	SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF
CN115706046B (en) *	2021-08-10	2025-11-14	苏州龙驰半导体科技有限公司	Composite structures of semiconductor wafers, semiconductor wafers and their fabrication methods and applications

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1114497A (en) *	1965-06-28	1968-05-22	Dow Corning	Improvements in or relating to semiconductor devices
US5349207A (en) *	1993-02-22	1994-09-20	Texas Instruments Incorporated	Silicon carbide wafer bonded to a silicon wafer
JP3324469B2 (en) *	1997-09-26	2002-09-17	信越半導体株式会社	Method for producing SOI wafer and SOI wafer produced by this method
DE19810828A1 (en) *	1998-03-12	1999-09-16	Siemens Ag	Method for bonding two wafers
US6255195B1 (en) *	1999-02-22	2001-07-03	Intersil Corporation	Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
US6372600B1 (en) *	1999-08-30	2002-04-16	Agere Systems Guardian Corp.	Etch stops and alignment marks for bonded wafers

2002
- 2002-10-21 AU AU2002337297A patent/AU2002337297A1/en not_active Abandoned
- 2002-10-21 WO PCT/GB2002/004738 patent/WO2003036699A2/en not_active Ceased

Also Published As

Publication number	Publication date
WO2003036699A3 (en)	2003-09-25
WO2003036699A2 (en)	2003-05-01

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Legal Events

Date	Code	Title	Description
2004-07-08	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase