AU2002327648A1 - Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication - Google Patents
Process and apparatus for silicon boat, silicon tubing and other silicon based member fabricationInfo
- Publication number
- AU2002327648A1 AU2002327648A1 AU2002327648A AU2002327648A AU2002327648A1 AU 2002327648 A1 AU2002327648 A1 AU 2002327648A1 AU 2002327648 A AU2002327648 A AU 2002327648A AU 2002327648 A AU2002327648 A AU 2002327648A AU 2002327648 A1 AU2002327648 A1 AU 2002327648A1
- Authority
- AU
- Australia
- Prior art keywords
- silicon
- boat
- tubing
- based member
- member fabrication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 3
- 229910052710 silicon Inorganic materials 0.000 title 3
- 239000010703 silicon Substances 0.000 title 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2303/00—Use of resin-bonded materials as reinforcement
- B29K2303/04—Inorganic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2503/00—Use of resin-bonded materials as filler
- B29K2503/04—Inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32309801P | 2001-09-19 | 2001-09-19 | |
| US60/323,098 | 2001-09-19 | ||
| US33671201P | 2001-12-07 | 2001-12-07 | |
| US60/336,712 | 2001-12-07 | ||
| PCT/US2002/029516 WO2003024876A2 (en) | 2001-09-19 | 2002-09-19 | Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2002327648A1 true AU2002327648A1 (en) | 2003-04-01 |
Family
ID=26983771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002327648A Abandoned AU2002327648A1 (en) | 2001-09-19 | 2002-09-19 | Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2002327648A1 (en) |
| CA (1) | CA2460996A1 (en) |
| WO (1) | WO2003024876A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115029786B (en) * | 2022-06-24 | 2024-04-30 | 云南北方光学科技有限公司 | Processing method of infrared thin silicon window |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021382A (en) * | 1983-07-15 | 1985-02-02 | Canon Inc | Plasma cvd apparatus |
| US5340516A (en) * | 1989-07-28 | 1994-08-23 | Engelhard Corporation | Thermal shock and creep resistant porous mullite articles prepared from topaz and process for manufacture |
| US5173121A (en) * | 1990-11-09 | 1992-12-22 | The Board Of Trustees Of The University Of Little Rock | Apparatus for the deposition and film formation of silicon on substrates |
| JPH0610080A (en) * | 1992-06-25 | 1994-01-18 | Takeshi Masumoto | Method for producing high strength alloy having fine structure |
| US6194026B1 (en) * | 1998-10-19 | 2001-02-27 | Howmet Research Corporation | Superalloy component with abrasive grit-free coating |
| JP4216491B2 (en) * | 2000-06-01 | 2009-01-28 | 三井造船株式会社 | α-SiC Wafer Manufacturing Method |
-
2002
- 2002-09-19 WO PCT/US2002/029516 patent/WO2003024876A2/en not_active Ceased
- 2002-09-19 AU AU2002327648A patent/AU2002327648A1/en not_active Abandoned
- 2002-09-19 CA CA002460996A patent/CA2460996A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CA2460996A1 (en) | 2003-03-27 |
| WO2003024876A2 (en) | 2003-03-27 |
| WO2003024876A3 (en) | 2003-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |