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AU2002327648A1 - Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication - Google Patents

Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

Info

Publication number
AU2002327648A1
AU2002327648A1 AU2002327648A AU2002327648A AU2002327648A1 AU 2002327648 A1 AU2002327648 A1 AU 2002327648A1 AU 2002327648 A AU2002327648 A AU 2002327648A AU 2002327648 A AU2002327648 A AU 2002327648A AU 2002327648 A1 AU2002327648 A1 AU 2002327648A1
Authority
AU
Australia
Prior art keywords
silicon
boat
tubing
based member
member fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002327648A
Inventor
Kiril A. Pandelisev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Phoenix Scientific Corp
Original Assignee
Phoenix Scientific Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoenix Scientific Corp filed Critical Phoenix Scientific Corp
Publication of AU2002327648A1 publication Critical patent/AU2002327648A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2303/00Use of resin-bonded materials as reinforcement
    • B29K2303/04Inorganic materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2503/00Use of resin-bonded materials as filler
    • B29K2503/04Inorganic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002327648A 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication Abandoned AU2002327648A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32309801P 2001-09-19 2001-09-19
US60/323,098 2001-09-19
US33671201P 2001-12-07 2001-12-07
US60/336,712 2001-12-07
PCT/US2002/029516 WO2003024876A2 (en) 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

Publications (1)

Publication Number Publication Date
AU2002327648A1 true AU2002327648A1 (en) 2003-04-01

Family

ID=26983771

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002327648A Abandoned AU2002327648A1 (en) 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

Country Status (3)

Country Link
AU (1) AU2002327648A1 (en)
CA (1) CA2460996A1 (en)
WO (1) WO2003024876A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115029786B (en) * 2022-06-24 2024-04-30 云南北方光学科技有限公司 Processing method of infrared thin silicon window

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021382A (en) * 1983-07-15 1985-02-02 Canon Inc Plasma cvd apparatus
US5340516A (en) * 1989-07-28 1994-08-23 Engelhard Corporation Thermal shock and creep resistant porous mullite articles prepared from topaz and process for manufacture
US5173121A (en) * 1990-11-09 1992-12-22 The Board Of Trustees Of The University Of Little Rock Apparatus for the deposition and film formation of silicon on substrates
JPH0610080A (en) * 1992-06-25 1994-01-18 Takeshi Masumoto Method for producing high strength alloy having fine structure
US6194026B1 (en) * 1998-10-19 2001-02-27 Howmet Research Corporation Superalloy component with abrasive grit-free coating
JP4216491B2 (en) * 2000-06-01 2009-01-28 三井造船株式会社 α-SiC Wafer Manufacturing Method

Also Published As

Publication number Publication date
CA2460996A1 (en) 2003-03-27
WO2003024876A2 (en) 2003-03-27
WO2003024876A3 (en) 2003-05-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase