[go: up one dir, main page]

AU2002211555A1 - N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom - Google Patents

N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

Info

Publication number
AU2002211555A1
AU2002211555A1 AU2002211555A AU1155502A AU2002211555A1 AU 2002211555 A1 AU2002211555 A1 AU 2002211555A1 AU 2002211555 A AU2002211555 A AU 2002211555A AU 1155502 A AU1155502 A AU 1155502A AU 2002211555 A1 AU2002211555 A1 AU 2002211555A1
Authority
AU
Australia
Prior art keywords
nitrogen
type doping
made therefrom
electrodes made
diamond films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211555A
Inventor
Orlando H Auciello
John A. Carlisle
Dieter M. Gruen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Chicago
Original Assignee
University of Chicago
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Chicago filed Critical University of Chicago
Publication of AU2002211555A1 publication Critical patent/AU2002211555A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065—Presses for the formation of diamonds or boronitrides
    • B01J3/067—Presses using a plurality of pressing members working in different directions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
AU2002211555A 2000-10-09 2001-10-09 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom Abandoned AU2002211555A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23917300P 2000-10-09 2000-10-09
US60/239,173 2000-10-09
US31414201P 2001-08-22 2001-08-22
US60/314,142 2001-08-22
PCT/US2001/031528 WO2002031839A1 (en) 2000-10-09 2001-10-09 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

Publications (1)

Publication Number Publication Date
AU2002211555A1 true AU2002211555A1 (en) 2002-04-22

Family

ID=26932345

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2002211555A Abandoned AU2002211555A1 (en) 2000-10-09 2001-10-09 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
AU2002211505A Abandoned AU2002211505A1 (en) 2000-10-09 2001-10-09 Electrode and electron emission applications for n-type doped nanocrystalline materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2002211505A Abandoned AU2002211505A1 (en) 2000-10-09 2001-10-09 Electrode and electron emission applications for n-type doped nanocrystalline materials

Country Status (4)

Country Link
EP (1) EP1330846A4 (en)
JP (1) JP2004511885A (en)
AU (2) AU2002211555A1 (en)
WO (2) WO2002031839A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10259174B4 (en) 2002-12-18 2006-10-12 Robert Bosch Gmbh Use of a tribologically stressed component
EP2431504B1 (en) * 2004-05-27 2014-01-01 Toppan Printing Co., Ltd. Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film
KR100924287B1 (en) * 2007-05-10 2009-10-30 한국과학기술연구원 DC power plasma deposition apparatus that does not have a positive pole, the material deposition method without the positive pole and the diamond thin film produced thereby
US8770827B2 (en) 2009-05-18 2014-07-08 The Swatch Group Research And Development Ltd Method for coating micromechanical parts with high tribological performances for application in mechanical systems
JP2011258348A (en) * 2010-06-07 2011-12-22 Toyota Central R&D Labs Inc Negative electrode for lithium secondary battery, lithium secondary battery and method of manufacturing negative electrode for lithium secondary battery
EP2714190B1 (en) * 2011-06-03 2017-08-09 The University of Melbourne An electrode for medical device applications
JP6452334B2 (en) 2014-07-16 2019-01-16 キヤノン株式会社 Target, X-ray generator tube having the target, X-ray generator, X-ray imaging system
CN108054473B (en) * 2017-12-26 2024-04-09 深圳先进技术研究院 Metal-air battery and preparation method thereof
CN110453176A (en) * 2019-07-23 2019-11-15 北京科技大学 Preparation method of long-life ultra-nano diamond periodic multilayer coating cutter
CN113257974B (en) * 2021-04-30 2023-04-21 武汉大学 Light-emitting diode chip with super-nanocrystalline diamond conducting layer and preparation method
AU2024258149A1 (en) * 2023-04-18 2025-11-06 Daicel Corporation Semiconductor catalyst, catalyst electrode, method for producing reduced product, and device for producing reduced product

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599668A (en) * 1977-06-02 1981-10-07 Nat Res Dev Semiconductors
US5713775A (en) * 1995-05-02 1998-02-03 Massachusetts Institute Of Technology Field emitters of wide-bandgap materials and methods for their fabrication
US5973451A (en) * 1997-02-04 1999-10-26 Massachusetts Institute Of Technology Surface-emission cathodes
JP4294140B2 (en) * 1999-01-27 2009-07-08 有限会社アプライドダイヤモンド Diamond thin film modification method, diamond thin film modification and thin film formation method, and diamond thin film processing method
US6303225B1 (en) * 2000-05-24 2001-10-16 Guardian Industries Corporation Hydrophilic coating including DLC on substrate

Also Published As

Publication number Publication date
EP1330846A4 (en) 2004-12-15
WO2002031839A1 (en) 2002-04-18
WO2002031891A1 (en) 2002-04-18
EP1330846A1 (en) 2003-07-30
WO2002031891A9 (en) 2003-07-17
WO2002031839A9 (en) 2003-02-20
JP2004511885A (en) 2004-04-15
AU2002211505A1 (en) 2002-04-22

Similar Documents

Publication Publication Date Title
AU2001286649A1 (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU2001281762A1 (en) Fabrication and application of nano-manipulators with induced growth
AU2001294876A1 (en) Direct growth of nanotubes, and their use in nanotweezers
AU8664901A (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU2002225681A1 (en) Yeast-dentritic cell vaccines and uses thereof
AU2000271135A1 (en) Materials with silicon-containing layers for use in miniaturized arrays and methods of manufacturing
AU2002238953A1 (en) Solar cell and its manufacturing method
AU2001267181A1 (en) Polyubiquitin based hydrogel and uses thereof
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU3084001A (en) Low gate current field emitter cell and array with vertical thin-film-edge emitter
AU2002239754A1 (en) Doped semiconductor nanocrystals
AU2002211555A1 (en) N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
AU2002322941A1 (en) Oxygen doping of josephson junctions
AU2001238308A1 (en) Wireless telephone airplane and alarm clock modes
AU2001269331A1 (en) Cleaning and doping of tubulars
AU2002230894A1 (en) Multidimensional array and fabrication thereof
AUPR009000A0 (en) Intelligent courseware developement and delivery environment
AU2001280179A1 (en) Production and use of octafluoropropane
AU2001290323A1 (en) Electrochemical device and method of manufacturing the device
AU2001242937A1 (en) Mobile terminal sleep phase assignment and announcement in wireless local areanetwork
AU2002341641A1 (en) Crystal structure of interleukin-22 and uses thereof
AU2001282769A1 (en) Absorbent article with folded arcuate shaped belt and method for its manufacture
AU2001232930A1 (en) Find and dial
AU2001216514A1 (en) Electrode material and capacitor
AU2001269469A1 (en) Single crystal wafer and solar battery cell