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AU2002246489A1 - Quantum dot lasers - Google Patents

Quantum dot lasers

Info

Publication number
AU2002246489A1
AU2002246489A1 AU2002246489A AU2002246489A AU2002246489A1 AU 2002246489 A1 AU2002246489 A1 AU 2002246489A1 AU 2002246489 A AU2002246489 A AU 2002246489A AU 2002246489 A AU2002246489 A AU 2002246489A AU 2002246489 A1 AU2002246489 A1 AU 2002246489A1
Authority
AU
Australia
Prior art keywords
quantum dot
dot lasers
lasers
quantum
dot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002246489A
Inventor
Luke F. Lester
Hua Li
Kevin J. Malloy
Timothy C. Newell
Andreas Stintz
Petros N. Varangis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNM Rainforest Innovations
Original Assignee
STC UNM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/961,560 external-priority patent/US6600169B2/en
Application filed by STC UNM filed Critical STC UNM
Publication of AU2002246489A1 publication Critical patent/AU2002246489A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU2002246489A 2000-10-06 2001-10-05 Quantum dot lasers Abandoned AU2002246489A1 (en)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US23803000P 2000-10-06 2000-10-06
US60/238,030 2000-10-06
US25208400P 2000-11-21 2000-11-21
US60/252,084 2000-11-21
US27230701P 2001-03-02 2001-03-02
US60/272,307 2001-03-02
US27618601P 2001-03-16 2001-03-16
US60/276,186 2001-03-16
US31630501P 2001-08-31 2001-08-31
US60/316,305 2001-08-31
US09/961,560 US6600169B2 (en) 2000-09-22 2001-09-20 Quantum dash device
US09/961,560 2001-09-20
PCT/US2001/031256 WO2002058200A2 (en) 2000-10-06 2001-10-05 Quantum dot lasers

Publications (1)

Publication Number Publication Date
AU2002246489A1 true AU2002246489A1 (en) 2002-07-30

Family

ID=27559279

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002246489A Abandoned AU2002246489A1 (en) 2000-10-06 2001-10-05 Quantum dot lasers

Country Status (6)

Country Link
EP (1) EP1354380A2 (en)
JP (3) JP2004528705A (en)
AU (1) AU2002246489A1 (en)
CA (1) CA2423782A1 (en)
IL (2) IL155026A0 (en)
WO (1) WO2002058200A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3692407B2 (en) * 2003-08-28 2005-09-07 国立大学法人 東京大学 Manufacturing method of semiconductor quantum dot device
WO2005069387A1 (en) * 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
JP4873527B2 (en) * 2004-08-26 2012-02-08 独立行政法人産業技術総合研究所 Manufacturing method of semiconductor light emitting device
JP4829508B2 (en) * 2005-02-18 2011-12-07 富士通株式会社 Manufacturing method of optical semiconductor device
JP2007123731A (en) * 2005-10-31 2007-05-17 Toshiba Corp Semiconductor light emitting element and semiconductor light emitting device
TWI318815B (en) * 2006-12-20 2009-12-21 Ind Tech Res Inst Multiwavelength semiconductor laser array and method of manufacturing the same
CN101652832B (en) * 2007-01-26 2011-06-22 晶体公司 Thick pseudomorphic nitride epitaxial layers
JP4750728B2 (en) * 2007-02-09 2011-08-17 富士通株式会社 Manufacturing method of semiconductor device
US8965208B2 (en) 2009-05-22 2015-02-24 Kotura, Inc. Multi-channel optical device
JP5672983B2 (en) * 2010-11-04 2015-02-18 富士通株式会社 Light emitting semiconductor device and method for manufacturing the same
US9203215B2 (en) * 2013-07-03 2015-12-01 Inphenix, Inc. Wavelength-tunable vertical cavity surface emitting laser for swept source optical coherence tomography system
JP6581419B2 (en) * 2015-07-30 2019-09-25 浜松ホトニクス株式会社 Distributed feedback lateral multimode semiconductor laser device
JP7265258B2 (en) * 2019-07-30 2023-04-26 国立大学法人 和歌山大学 Wavelength sweeping optical coherence tomography system
JP7543862B2 (en) * 2020-11-13 2024-09-03 株式会社デンソー Semiconductor laser device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2744292B1 (en) * 1996-01-29 1998-04-30 Menigaux Louis MULTI-WAVELENGTH LASER EMISSION COMPONENT

Also Published As

Publication number Publication date
IL155026A (en) 2006-07-05
WO2002058200A9 (en) 2003-05-30
WO2002058200A3 (en) 2003-08-14
CA2423782A1 (en) 2002-07-25
JP2007318165A (en) 2007-12-06
IL155026A0 (en) 2003-10-31
WO2002058200A2 (en) 2002-07-25
JP2004528705A (en) 2004-09-16
JP2009117856A (en) 2009-05-28
EP1354380A2 (en) 2003-10-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase