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AU2002245560A1 - System and method of providing mask defect printability analysis - Google Patents

System and method of providing mask defect printability analysis

Info

Publication number
AU2002245560A1
AU2002245560A1 AU2002245560A AU2002245560A AU2002245560A1 AU 2002245560 A1 AU2002245560 A1 AU 2002245560A1 AU 2002245560 A AU2002245560 A AU 2002245560A AU 2002245560 A AU2002245560 A AU 2002245560A AU 2002245560 A1 AU2002245560 A1 AU 2002245560A1
Authority
AU
Australia
Prior art keywords
mask defect
providing mask
defect printability
printability analysis
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002245560A
Inventor
Lynn Cai
Linard Karklin
Linyong Pang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Numerical Technologies Inc
Original Assignee
Numerical Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/814,023 external-priority patent/US6873720B2/en
Priority claimed from US09/814,025 external-priority patent/US6925202B2/en
Application filed by Numerical Technologies Inc filed Critical Numerical Technologies Inc
Publication of AU2002245560A1 publication Critical patent/AU2002245560A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H10P76/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2002245560A 2001-03-20 2002-02-28 System and method of providing mask defect printability analysis Abandoned AU2002245560A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/814,023 2001-03-20
US09/814,023 US6873720B2 (en) 2001-03-20 2001-03-20 System and method of providing mask defect printability analysis
US09/814,025 US6925202B2 (en) 2001-03-20 2001-03-20 System and method of providing mask quality control
US09/814,025 2001-03-20
PCT/US2002/006491 WO2002075793A2 (en) 2001-03-20 2002-02-28 System and method of providing mask defect printability analysis

Publications (1)

Publication Number Publication Date
AU2002245560A1 true AU2002245560A1 (en) 2002-10-03

Family

ID=27123806

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002245560A Abandoned AU2002245560A1 (en) 2001-03-20 2002-02-28 System and method of providing mask defect printability analysis

Country Status (5)

Country Link
JP (1) JP4663214B2 (en)
KR (1) KR100610441B1 (en)
CN (1) CN1290168C (en)
AU (1) AU2002245560A1 (en)
WO (1) WO2002075793A2 (en)

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US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
DE10360536B4 (en) * 2003-09-30 2006-12-21 Infineon Technologies Ag Method for inspecting masks of a mask set for a multiple exposure
US8151220B2 (en) * 2003-12-04 2012-04-03 Kla-Tencor Technologies Corp. Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data
WO2005073807A1 (en) * 2004-01-29 2005-08-11 Kla-Tencor Technologies Corporation Computer-implemented methods for detecting defects in reticle design data
CN100428401C (en) * 2004-06-14 2008-10-22 中芯国际集成电路制造(上海)有限公司 Method and system for treating similarity of semiconductor device finished product ratio
CN100413018C (en) * 2004-06-14 2008-08-20 中芯国际集成电路制造(上海)有限公司 Method and system for treating identity of semiconductor device
JP4455469B2 (en) 2004-09-14 2010-04-21 エーエスエムエル マスクツールズ ビー．ブイ． Method for full chip manufacturing reliability check and correction
JP4904034B2 (en) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション Method, system and carrier medium for evaluating reticle layout data
US7729529B2 (en) * 2004-12-07 2010-06-01 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
JP2006337668A (en) * 2005-06-01 2006-12-14 Toshiba Corp Semiconductor device manufacturing method and layout pattern creation program
JP4954211B2 (en) * 2005-09-09 2012-06-13 エーエスエムエル ネザーランズ ビー．ブイ． System and method for performing mask verification using an individual mask error model
JP4774917B2 (en) * 2005-10-27 2011-09-21 凸版印刷株式会社 Mask pattern inspection apparatus and inspection method
US20070177788A1 (en) * 2006-01-31 2007-08-02 David Liu System and method for detecting wafer failure in wet bench applications
US7596736B2 (en) * 2006-03-24 2009-09-29 International Business Machines Corporation Iterative process for identifying systematics in data
US7794903B2 (en) * 2006-08-15 2010-09-14 Infineon Technologies Ag Metrology systems and methods for lithography processes
JP4850916B2 (en) * 2006-09-29 2012-01-11 キヤノンマシナリー株式会社 Pickup method and pickup device
US8038897B2 (en) * 2007-02-06 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer inspection
JP2009092954A (en) * 2007-10-09 2009-04-30 Toshiba Corp Pattern evaluation method
DE102007054994A1 (en) * 2007-11-17 2009-05-20 Carl Zeiss Sms Gmbh Method of repairing phase shift masks
NL1036189A1 (en) 2007-12-05 2009-06-08 Brion Tech Inc Methods and System for Lithography Process Window Simulation.
JP4942800B2 (en) 2009-08-18 2012-05-30 株式会社ニューフレアテクノロジー Inspection device
JP4918598B2 (en) * 2010-01-18 2012-04-18 株式会社ニューフレアテクノロジー Inspection apparatus and inspection method
US8196072B2 (en) * 2010-03-31 2012-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of patterning semiconductor device
US8234603B2 (en) * 2010-07-14 2012-07-31 International Business Machines Corporation Method for fast estimation of lithographic binding patterns in an integrated circuit layout
CN102053093A (en) * 2010-11-08 2011-05-11 北京大学深圳研究生院 Method for detecting surface defects of chip cut from wafer surface
CN102789133B (en) * 2011-05-16 2014-09-03 中芯国际集成电路制造(上海)有限公司 After develop inspection method
CN102902154A (en) * 2011-07-29 2013-01-30 上海华虹Nec电子有限公司 Modeling method for optical proximity correction process model
EP3105636B1 (en) 2014-02-12 2023-07-12 ASML Netherlands B.V. Method of optimizing a process window
WO2015189026A2 (en) 2014-06-10 2015-12-17 Asml Netherlands B.V. Computational wafer inspection
WO2017171890A1 (en) * 2016-04-02 2017-10-05 Intel Corporation Systems, methods, and apparatuses for reducing opc model error via a machine learning algorithm
US10451563B2 (en) 2017-02-21 2019-10-22 Kla-Tencor Corporation Inspection of photomasks by comparing two photomasks
DE102017203879B4 (en) * 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Method for analyzing a defect site of a photolithographic mask
US10503078B2 (en) * 2017-09-01 2019-12-10 Kla-Tencor Corporation Criticality analysis augmented process window qualification sampling
US11276160B2 (en) * 2017-10-02 2022-03-15 Applied Materials Israel Ltd. Determining a critical dimension variation of a pattern
CN108932922B (en) * 2018-07-03 2021-05-14 京东方科技集团股份有限公司 A kind of repair ability testing device and method
US11079671B2 (en) * 2019-08-23 2021-08-03 Taiwan Semiconductor Manufacturing Company Ltd. Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same
CN116157736B (en) * 2020-04-30 2025-11-21 美商福昌公司 System, method and program product for manufacturing photomask
CN115561970B (en) * 2021-07-02 2025-08-19 中芯国际集成电路制造(上海)有限公司 Pattern detection method, apparatus, and storage medium
US12361535B2 (en) * 2021-10-25 2025-07-15 Applied Materials Israel Ltd. Mask inspection for semiconductor specimen fabrication

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US4809341A (en) * 1986-07-18 1989-02-28 Fujitsu Limited Test method and apparatus for a reticle or mask pattern used in semiconductor device fabrication
US5029222A (en) * 1987-09-02 1991-07-02 Fujitsu Limited Photoelectron image projection apparatus
JPH04165353A (en) * 1990-10-30 1992-06-11 Oki Electric Ind Co Ltd Correction method of photo-mask
JPH0728226A (en) * 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> Equipment and method for measuring regional image
JP2776416B2 (en) * 1996-05-07 1998-07-16 日本電気株式会社 Reticle visual inspection device
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
JP3750270B2 (en) * 1997-04-21 2006-03-01 凸版印刷株式会社 Photomask defect analysis apparatus and defect analysis method
JP3750272B2 (en) * 1997-04-30 2006-03-01 凸版印刷株式会社 Photomask defect analysis apparatus, defect analysis method, and recording medium recording the defect analysis program
US6757645B2 (en) * 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US5965306A (en) * 1997-10-15 1999-10-12 International Business Machines Corporation Method of determining the printability of photomask defects
US6614924B1 (en) * 1999-08-02 2003-09-02 Applied Materials, Inc. Adaptive mask technique for defect inspection
JP2001056306A (en) * 1999-08-19 2001-02-27 Jeol Ltd Sample surface inspection device

Also Published As

Publication number Publication date
KR20040021591A (en) 2004-03-10
WO2002075793A2 (en) 2002-09-26
CN1290168C (en) 2006-12-13
KR100610441B1 (en) 2006-08-08
CN1498418A (en) 2004-05-19
JP2005500671A (en) 2005-01-06
WO2002075793B1 (en) 2004-05-21
JP4663214B2 (en) 2011-04-06
WO2002075793A3 (en) 2003-05-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase