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AU2001234468A1 - Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same - Google Patents

Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same

Info

Publication number
AU2001234468A1
AU2001234468A1 AU2001234468A AU3446801A AU2001234468A1 AU 2001234468 A1 AU2001234468 A1 AU 2001234468A1 AU 2001234468 A AU2001234468 A AU 2001234468A AU 3446801 A AU3446801 A AU 3446801A AU 2001234468 A1 AU2001234468 A1 AU 2001234468A1
Authority
AU
Australia
Prior art keywords
methods
integrated circuit
field effect
effect transistors
lanthanum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001234468A
Inventor
Angus Ian Kingon
Jon-Paul Maria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of AU2001234468A1 publication Critical patent/AU2001234468A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/6933—
    • H10D64/0134—
    • H10D64/01342—
    • H10D64/01352—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6332—
    • H10P14/6336—
    • H10P14/6927—
    • H10P14/69396—
AU2001234468A 2000-01-19 2001-01-17 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same Abandoned AU2001234468A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17701000P 2000-01-19 2000-01-19
US60177010 2000-01-19
PCT/US2001/001502 WO2001054200A1 (en) 2000-01-19 2001-01-17 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same

Publications (1)

Publication Number Publication Date
AU2001234468A1 true AU2001234468A1 (en) 2001-07-31

Family

ID=22646803

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001234468A Abandoned AU2001234468A1 (en) 2000-01-19 2001-01-17 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same

Country Status (3)

Country Link
US (2) US6531354B2 (en)
AU (1) AU2001234468A1 (en)
WO (1) WO2001054200A1 (en)

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Also Published As

Publication number Publication date
US20030137019A1 (en) 2003-07-24
US20010032995A1 (en) 2001-10-25
US6531354B2 (en) 2003-03-11
US6753567B2 (en) 2004-06-22
WO2001054200A1 (en) 2001-07-26

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