AU2001228975A1 - A semiconductor device - Google Patents
A semiconductor deviceInfo
- Publication number
- AU2001228975A1 AU2001228975A1 AU2001228975A AU2897501A AU2001228975A1 AU 2001228975 A1 AU2001228975 A1 AU 2001228975A1 AU 2001228975 A AU2001228975 A AU 2001228975A AU 2897501 A AU2897501 A AU 2897501A AU 2001228975 A1 AU2001228975 A1 AU 2001228975A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H10P95/92—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0000115 | 2000-01-17 | ||
| SE0000115A SE0000115D0 (en) | 2000-01-17 | 2000-01-17 | A semiconductor device |
| PCT/SE2001/000072 WO2001054204A1 (en) | 2000-01-17 | 2001-01-17 | A semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001228975A1 true AU2001228975A1 (en) | 2001-07-31 |
Family
ID=20278115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001228975A Abandoned AU2001228975A1 (en) | 2000-01-17 | 2001-01-17 | A semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001228975A1 (en) |
| SE (1) | SE0000115D0 (en) |
| WO (1) | WO2001054204A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2934713B1 (en) * | 2008-07-29 | 2010-10-15 | Commissariat Energie Atomique | SEMICONDUCTOR TYPE SUBSTRATE ON INTRINSIC DIAMOND LAYER INSULATION AND DOPE |
| DE102011081322B4 (en) * | 2011-08-22 | 2015-03-26 | Siemens Aktiengesellschaft | Detector element, radiation detector and medical device with such detector elements and method for generating a detector element |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094751A (en) * | 1976-09-30 | 1978-06-13 | Allied Chemical Corporation | Photochemical diodes |
| US4190950A (en) * | 1977-06-01 | 1980-03-04 | The United States Of America As Represented By The Department Of Energy | Dye-sensitized solar cells |
| US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
| WO1992017908A1 (en) * | 1991-03-28 | 1992-10-15 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
| US5199918A (en) * | 1991-11-07 | 1993-04-06 | Microelectronics And Computer Technology Corporation | Method of forming field emitter device with diamond emission tips |
| WO1997036309A1 (en) * | 1996-03-27 | 1997-10-02 | Matsushita Electric Industrial Co., Ltd. | Electron emitting device and process for producing the same |
-
2000
- 2000-01-17 SE SE0000115A patent/SE0000115D0/en unknown
-
2001
- 2001-01-17 WO PCT/SE2001/000072 patent/WO2001054204A1/en not_active Ceased
- 2001-01-17 AU AU2001228975A patent/AU2001228975A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| SE0000115D0 (en) | 2000-01-17 |
| WO2001054204A1 (en) | 2001-07-26 |
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