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AU2001228975A1 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
AU2001228975A1
AU2001228975A1 AU2001228975A AU2897501A AU2001228975A1 AU 2001228975 A1 AU2001228975 A1 AU 2001228975A1 AU 2001228975 A AU2001228975 A AU 2001228975A AU 2897501 A AU2897501 A AU 2897501A AU 2001228975 A1 AU2001228975 A1 AU 2001228975A1
Authority
AU
Australia
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001228975A
Inventor
Johan Hammersberg
Olof Hjortstam
Mark Irwin
Jan Isberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
ABB AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB AB filed Critical ABB AB
Publication of AU2001228975A1 publication Critical patent/AU2001228975A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82Heterojunctions
    • H10D62/822Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/64Electrodes comprising a Schottky barrier to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/122Active materials comprising only Group IV materials
    • H10P95/92
AU2001228975A 2000-01-17 2001-01-17 A semiconductor device Abandoned AU2001228975A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0000115 2000-01-17
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device
PCT/SE2001/000072 WO2001054204A1 (en) 2000-01-17 2001-01-17 A semiconductor device

Publications (1)

Publication Number Publication Date
AU2001228975A1 true AU2001228975A1 (en) 2001-07-31

Family

ID=20278115

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001228975A Abandoned AU2001228975A1 (en) 2000-01-17 2001-01-17 A semiconductor device

Country Status (3)

Country Link
AU (1) AU2001228975A1 (en)
SE (1) SE0000115D0 (en)
WO (1) WO2001054204A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934713B1 (en) * 2008-07-29 2010-10-15 Commissariat Energie Atomique SEMICONDUCTOR TYPE SUBSTRATE ON INTRINSIC DIAMOND LAYER INSULATION AND DOPE
DE102011081322B4 (en) * 2011-08-22 2015-03-26 Siemens Aktiengesellschaft Detector element, radiation detector and medical device with such detector elements and method for generating a detector element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094751A (en) * 1976-09-30 1978-06-13 Allied Chemical Corporation Photochemical diodes
US4190950A (en) * 1977-06-01 1980-03-04 The United States Of America As Represented By The Department Of Energy Dye-sensitized solar cells
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
WO1992017908A1 (en) * 1991-03-28 1992-10-15 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
WO1997036309A1 (en) * 1996-03-27 1997-10-02 Matsushita Electric Industrial Co., Ltd. Electron emitting device and process for producing the same

Also Published As

Publication number Publication date
SE0000115D0 (en) 2000-01-17
WO2001054204A1 (en) 2001-07-26

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