AU2001255693A1 - Improved structure for a semiconductor device - Google Patents
Improved structure for a semiconductor deviceInfo
- Publication number
- AU2001255693A1 AU2001255693A1 AU2001255693A AU5569301A AU2001255693A1 AU 2001255693 A1 AU2001255693 A1 AU 2001255693A1 AU 2001255693 A AU2001255693 A AU 2001255693A AU 5569301 A AU5569301 A AU 5569301A AU 2001255693 A1 AU2001255693 A1 AU 2001255693A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- improved structure
- improved
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20013800P | 2000-04-27 | 2000-04-27 | |
| US60200138 | 2000-04-27 | ||
| PCT/US2001/013415 WO2001084631A1 (en) | 2000-04-27 | 2001-04-26 | Improved structure for a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001255693A1 true AU2001255693A1 (en) | 2001-11-12 |
Family
ID=22740483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001255693A Abandoned AU2001255693A1 (en) | 2000-04-27 | 2001-04-26 | Improved structure for a semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6559517B2 (en) |
| AU (1) | AU2001255693A1 (en) |
| WO (1) | WO2001084631A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222938A (en) * | 2001-01-25 | 2002-08-09 | Rohm Co Ltd | Semiconductor device |
| US7064416B2 (en) * | 2001-11-16 | 2006-06-20 | International Business Machines Corporation | Semiconductor device and method having multiple subcollectors formed on a common wafer |
| EP1743373B1 (en) * | 2004-03-19 | 2013-05-08 | Fairchild Semiconductor Corporation | Schottky diode with durable contact on silicon carbide and method of fabrication |
| US7285469B2 (en) * | 2005-09-02 | 2007-10-23 | Intersil Americas | Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns |
| SE1150065A1 (en) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Silicon carbide bipolar transistor with overgrown emitter |
| US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
| KR101944337B1 (en) | 2012-06-14 | 2019-02-01 | 스카이워크스 솔루션즈, 인코포레이티드 | Process-compensated hbt power amplifier bias circuits and mehtods |
| WO2013188712A1 (en) | 2012-06-14 | 2013-12-19 | Skyworks Solutions, Inc. | Power amplifier modules including related systems, devices, and methods |
| JP2018101652A (en) | 2016-12-19 | 2018-06-28 | 株式会社村田製作所 | Bipolar transistor and method for manufacturing the same |
| TWI726155B (en) * | 2017-09-14 | 2021-05-01 | 聯華電子股份有限公司 | Bipolar junction transistor |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4871684A (en) * | 1987-10-29 | 1989-10-03 | International Business Machines Corporation | Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors |
| US5101256A (en) | 1989-02-13 | 1992-03-31 | International Business Machines Corporation | Bipolar transistor with ultra-thin epitaxial base and method of fabricating same |
| US5289024A (en) * | 1990-08-07 | 1994-02-22 | National Semiconductor Corporation | Bipolar transistor with diffusion compensation |
| US5603765A (en) | 1993-12-01 | 1997-02-18 | Hughes Aircraft Company | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy |
| US5583059A (en) * | 1994-06-01 | 1996-12-10 | International Business Machines Corporation | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
| US5981985A (en) | 1996-06-24 | 1999-11-09 | The Trustees Of Columbia University In The City Of New York | Heterojunction bipolar transistor with buried selective sub-collector layer, and methods of manufacture |
| SE511891C2 (en) | 1997-08-29 | 1999-12-13 | Ericsson Telefon Ab L M | Bipolar power transistor and manufacturing method |
| US6271577B1 (en) * | 1997-12-17 | 2001-08-07 | Texas Instruments Incorporated | Transistor and method |
| US20010013636A1 (en) * | 1999-01-22 | 2001-08-16 | James S. Dunn | A self-aligned, sub-minimum isolation ring |
| US6180478B1 (en) | 1999-04-19 | 2001-01-30 | Industrial Technology Research Institute | Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance |
| US6218254B1 (en) * | 1999-09-22 | 2001-04-17 | Cree Research, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| US6291304B1 (en) * | 1999-09-15 | 2001-09-18 | Taiwan Semiconductor Manufacturing Company | Method of fabricating a high voltage transistor using P+ buried layer |
| US6245609B1 (en) * | 1999-09-27 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High voltage transistor using P+ buried layer |
-
2001
- 2001-04-26 AU AU2001255693A patent/AU2001255693A1/en not_active Abandoned
- 2001-04-26 WO PCT/US2001/013415 patent/WO2001084631A1/en not_active Ceased
- 2001-04-26 US US09/842,555 patent/US6559517B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020000640A1 (en) | 2002-01-03 |
| US6559517B2 (en) | 2003-05-06 |
| WO2001084631A1 (en) | 2001-11-08 |
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