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AU2001292024A1 - Preparation of a relaxed sige layer on an insulator - Google Patents

Preparation of a relaxed sige layer on an insulator

Info

Publication number
AU2001292024A1
AU2001292024A1 AU2001292024A AU9202401A AU2001292024A1 AU 2001292024 A1 AU2001292024 A1 AU 2001292024A1 AU 2001292024 A AU2001292024 A AU 2001292024A AU 9202401 A AU9202401 A AU 9202401A AU 2001292024 A1 AU2001292024 A1 AU 2001292024A1
Authority
AU
Australia
Prior art keywords
strained
ygey
insulator
hydrogen
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001292024A
Inventor
Jack Oon Chu
Christopher D'emic
Lijuan Huang
John Albert Ott
Hon-Sum Philip Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU2001292024A1 publication Critical patent/AU2001292024A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P90/1922—
    • H10P14/20—
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Engineering & Computer Science (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.
AU2001292024A 2000-09-29 2001-09-27 Preparation of a relaxed sige layer on an insulator Abandoned AU2001292024A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09675840 2000-09-29
US09/675,840 US6524935B1 (en) 2000-09-29 2000-09-29 Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
PCT/GB2001/004321 WO2002027783A1 (en) 2000-09-29 2001-09-27 PREPARATION OF A RELAXED SiGe LAYER ON AN INSULATOR

Publications (1)

Publication Number Publication Date
AU2001292024A1 true AU2001292024A1 (en) 2002-04-08

Family

ID=24712163

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001292024A Abandoned AU2001292024A1 (en) 2000-09-29 2001-09-27 Preparation of a relaxed sige layer on an insulator

Country Status (11)

Country Link
US (1) US6524935B1 (en)
EP (1) EP1320883B1 (en)
JP (1) JP4045187B2 (en)
KR (1) KR100532338B1 (en)
CN (1) CN1215550C (en)
AT (1) ATE464654T1 (en)
AU (1) AU2001292024A1 (en)
DE (1) DE60141843D1 (en)
MY (1) MY126089A (en)
TW (1) TW512487B (en)
WO (1) WO2002027783A1 (en)

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Also Published As

Publication number Publication date
DE60141843D1 (en) 2010-05-27
US6524935B1 (en) 2003-02-25
ATE464654T1 (en) 2010-04-15
EP1320883B1 (en) 2010-04-14
KR100532338B1 (en) 2005-11-29
MY126089A (en) 2006-09-29
TW512487B (en) 2002-12-01
CN1215550C (en) 2005-08-17
EP1320883A1 (en) 2003-06-25
KR20030033078A (en) 2003-04-26
CN1489786A (en) 2004-04-14
JP4045187B2 (en) 2008-02-13
JP2004510350A (en) 2004-04-02
WO2002027783A1 (en) 2002-04-04

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