AU2001288845A1 - Body-tied silicon on insulator semiconductor device structure and method therefor - Google Patents
Body-tied silicon on insulator semiconductor device structure and method thereforInfo
- Publication number
- AU2001288845A1 AU2001288845A1 AU2001288845A AU8884501A AU2001288845A1 AU 2001288845 A1 AU2001288845 A1 AU 2001288845A1 AU 2001288845 A AU2001288845 A AU 2001288845A AU 8884501 A AU8884501 A AU 8884501A AU 2001288845 A1 AU2001288845 A1 AU 2001288845A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- device structure
- method therefor
- insulator semiconductor
- tied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
-
- H10P90/1906—
-
- H10W10/061—
-
- H10W10/181—
-
- H10W10/014—
-
- H10W10/17—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66555000A | 2000-09-19 | 2000-09-19 | |
| US09/665,550 | 2000-09-19 | ||
| PCT/US2001/027704 WO2002025701A2 (en) | 2000-09-19 | 2001-09-07 | Body-tied silicon on insulator semiconductor device structure and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001288845A1 true AU2001288845A1 (en) | 2002-04-02 |
Family
ID=24670554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001288845A Abandoned AU2001288845A1 (en) | 2000-09-19 | 2001-09-07 | Body-tied silicon on insulator semiconductor device structure and method therefor |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001288845A1 (en) |
| TW (1) | TW506078B (en) |
| WO (1) | WO2002025701A2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732287B2 (en) | 2006-05-02 | 2010-06-08 | Honeywell International Inc. | Method of forming a body-tie |
| US7964897B2 (en) | 2008-07-22 | 2011-06-21 | Honeywell International Inc. | Direct contact to area efficient body tie process flow |
| JP5736808B2 (en) * | 2011-02-02 | 2015-06-17 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| US8946819B2 (en) * | 2013-05-08 | 2015-02-03 | Globalfoundries Singapore Pte. Ltd. | Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3028061B2 (en) * | 1996-03-14 | 2000-04-04 | 日本電気株式会社 | SOI structure semiconductor device and semiconductor gate array |
| JP3441330B2 (en) * | 1997-02-28 | 2003-09-02 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| EP0989613B1 (en) * | 1998-08-29 | 2005-05-04 | International Business Machines Corporation | SOI transistor with body contact and method of forming same |
| JP2001274264A (en) * | 2000-03-24 | 2001-10-05 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
-
2001
- 2001-09-07 WO PCT/US2001/027704 patent/WO2002025701A2/en not_active Ceased
- 2001-09-07 AU AU2001288845A patent/AU2001288845A1/en not_active Abandoned
- 2001-09-19 TW TW090123018A patent/TW506078B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002025701A2 (en) | 2002-03-28 |
| TW506078B (en) | 2002-10-11 |
| WO2002025701A3 (en) | 2002-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2002357202A1 (en) | Body-tied silicon on insulator semiconductor device and method therefor | |
| AU3330600A (en) | Semiconductor device and semiconductor substrate | |
| AU2001272741A1 (en) | Semiconductor light-emitting device and semiconductor light-emitting apparatus | |
| EP1130626A3 (en) | Method and apparatus for manufacturing semiconductor device | |
| AU2001267880A1 (en) | Semiconductor device and method for fabricating the same | |
| AU2002348252A1 (en) | Organic semiconductor device and method | |
| AU2001291257A1 (en) | Multigate semiconductor device with vertical channel current and method of fabrication | |
| GB0017158D0 (en) | Thin-film semiconductor device and method of manufacture | |
| AU2001273116A1 (en) | Semiconductor device and method of formation | |
| EP1102327A3 (en) | Field effect semiconductor device | |
| AU2692600A (en) | Semiconductor element and semiconductor device | |
| AU2000224587A1 (en) | Semiconductor device | |
| AU2001236028A1 (en) | Semiconductor device | |
| AU2319600A (en) | Semiconductor device | |
| AU2002304041A1 (en) | Semiconductor storage method and device supporting multi-interfaces | |
| AU2002354254A1 (en) | Method for making nitride semiconductor substrate and method for making nitride semiconductor device | |
| AU2001271293A1 (en) | Semiconductor structure, device, circuit, and process | |
| AU2001294188A1 (en) | Device and method for manufacturing semiconductor | |
| EP1202350A3 (en) | Semiconductor device and manufacturing method thereof | |
| AU2002316720A1 (en) | Epitaxial semiconductor on insulator (soi) structures and devices | |
| AU2003240569A1 (en) | Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate | |
| AU3230801A (en) | Semiconductor device fabrication method and semiconductor device fabrication device | |
| AU2002228766A1 (en) | Semiconductor device and method of making same | |
| EP1174914A3 (en) | Semiconductor device and semiconductor device manufacturing method | |
| AU2001242793A1 (en) | Semiconductor device and fabrication method therefor |