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AU2001281078A1 - A mem gyroscope and a method of making same - Google Patents

A mem gyroscope and a method of making same

Info

Publication number
AU2001281078A1
AU2001281078A1 AU2001281078A AU8107801A AU2001281078A1 AU 2001281078 A1 AU2001281078 A1 AU 2001281078A1 AU 2001281078 A AU2001281078 A AU 2001281078A AU 8107801 A AU8107801 A AU 8107801A AU 2001281078 A1 AU2001281078 A1 AU 2001281078A1
Authority
AU
Australia
Prior art keywords
making same
mem
gyroscope
mem gyroscope
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281078A
Inventor
David T. Chang
Randall L. Kubena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001281078A1 publication Critical patent/AU2001281078A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
AU2001281078A 2000-08-01 2001-07-31 A mem gyroscope and a method of making same Abandoned AU2001281078A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09629679 2000-08-01
US09/629,679 US6555404B1 (en) 2000-08-01 2000-08-01 Method of manufacturing a dual wafer tunneling gyroscope
PCT/US2001/024529 WO2002010064A2 (en) 2000-08-01 2001-07-31 A mem gyroscope and a method of making same

Publications (1)

Publication Number Publication Date
AU2001281078A1 true AU2001281078A1 (en) 2002-02-13

Family

ID=24524031

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281078A Abandoned AU2001281078A1 (en) 2000-08-01 2001-07-31 A mem gyroscope and a method of making same

Country Status (6)

Country Link
US (3) US6555404B1 (en)
EP (1) EP1305256A2 (en)
JP (1) JP2004505260A (en)
AU (1) AU2001281078A1 (en)
TW (1) TW498410B (en)
WO (1) WO2002010064A2 (en)

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US6563184B1 (en) * 2000-08-01 2003-05-13 Hrl Laboratories, Llc Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
US6580138B1 (en) 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
AU2002359370A1 (en) * 2001-11-09 2003-05-26 Coventor, Incorporated Mems device having contact and standoff bumps and related methods
JP4115859B2 (en) * 2003-02-28 2008-07-09 株式会社日立製作所 Anodic bonding method and electronic device
AU2003901914A0 (en) * 2003-04-22 2003-05-08 Quantum Precision Instruments Pty Ltd Quantum tunnelling transducer device
DE10349014B4 (en) * 2003-10-17 2014-01-09 Austriamicrosystems Ag Microelectromechanical rotation rate sensor
US7202100B1 (en) 2004-09-03 2007-04-10 Hrl Laboratories, Llc Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope
US20060099733A1 (en) * 2004-11-09 2006-05-11 Geefay Frank S Semiconductor package and fabrication method
US7232700B1 (en) 2004-12-08 2007-06-19 Hrl Laboratories, Llc Integrated all-Si capacitive microgyro with vertical differential sense and control and process for preparing an integrated all-Si capacitive microgyro with vertical differential sense
US7015060B1 (en) * 2004-12-08 2006-03-21 Hrl Laboratories, Llc Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
CN102386877B (en) * 2006-03-08 2014-12-10 维斯普瑞公司 Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods
US7767483B1 (en) * 2006-07-25 2010-08-03 The United States Of America As Represented By The Secretary Of The Navy Dual-suspension system for MEMS-based devices and method for fabricating same
EP1959233A1 (en) * 2007-02-13 2008-08-20 STMicroelectronics S.r.l. Microelectromechanical gyroscope with self-test function and control method of a microelectromechanical gyroscope
EP1962054B1 (en) * 2007-02-13 2011-07-20 STMicroelectronics Srl Microelectromechanical gyroscope with open loop reading device and control method of a microelectromechanical gyroscope
DE102010041763A1 (en) 2010-09-30 2012-04-05 Siemens Aktiengesellschaft Micromechanical substrate
US9705450B2 (en) * 2011-06-24 2017-07-11 The United States Of America As Represented By The Secretary Of The Navy Apparatus and methods for time domain measurement of oscillation perturbations
US8650955B2 (en) 2012-01-18 2014-02-18 The United States Of America As Represented By The Secretary Of The Navy Time domain switched gyroscope
US8957355B1 (en) * 2012-01-26 2015-02-17 The Boeing Company Inertial measurement unit apparatus for use with guidance systems
US8875576B2 (en) 2012-03-21 2014-11-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for providing an in-plane inertial device with integrated clock
US8946067B2 (en) * 2012-06-12 2015-02-03 Bing Hu Method of making a thin crystalline semiconductor material
US9254992B2 (en) * 2012-07-27 2016-02-09 Tao Ju Method of making a MEMS gyroscope having a magnetic source and a magnetic sensing mechanism
US8991250B2 (en) 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
US10145739B2 (en) 2014-04-03 2018-12-04 Oto Photonics Inc. Waveguide sheet, fabrication method thereof and spectrometer using the same

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US5015850A (en) * 1989-06-20 1991-05-14 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated microscope assembly
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Also Published As

Publication number Publication date
EP1305256A2 (en) 2003-05-02
TW498410B (en) 2002-08-11
US6841838B2 (en) 2005-01-11
JP2004505260A (en) 2004-02-19
US6975009B2 (en) 2005-12-13
WO2002010064A3 (en) 2002-04-25
US20040217388A1 (en) 2004-11-04
US20030013246A1 (en) 2003-01-16
US6555404B1 (en) 2003-04-29
WO2002010064A2 (en) 2002-02-07

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