[go: up one dir, main page]

AU2002306289A1 - Method of manufacturing silicon - Google Patents

Method of manufacturing silicon

Info

Publication number
AU2002306289A1
AU2002306289A1 AU2002306289A AU2002306289A AU2002306289A1 AU 2002306289 A1 AU2002306289 A1 AU 2002306289A1 AU 2002306289 A AU2002306289 A AU 2002306289A AU 2002306289 A AU2002306289 A AU 2002306289A AU 2002306289 A1 AU2002306289 A1 AU 2002306289A1
Authority
AU
Australia
Prior art keywords
manufacturing silicon
silicon
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU2002306289A
Other versions
AU2002306289B2 (en
Inventor
Hiroyuki Oda
Satoru Wakamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Priority claimed from PCT/JP2002/005612 external-priority patent/WO2002100777A1/en
Publication of AU2002306289A1 publication Critical patent/AU2002306289A1/en
Application granted granted Critical
Publication of AU2002306289B2 publication Critical patent/AU2002306289B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

AU2002306289A 2001-06-06 2002-06-06 Method of manufacturing silicon Ceased AU2002306289B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001170430 2001-06-06
JP2001-170430 2001-06-06
JP2002-091664 2002-03-28
JP2002091664 2002-03-28
PCT/JP2002/005612 WO2002100777A1 (en) 2001-06-06 2002-06-06 Method of manufacturing silicon

Publications (2)

Publication Number Publication Date
AU2002306289A1 true AU2002306289A1 (en) 2003-05-15
AU2002306289B2 AU2002306289B2 (en) 2007-01-18

Family

ID=26616407

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002306289A Ceased AU2002306289B2 (en) 2001-06-06 2002-06-06 Method of manufacturing silicon

Country Status (10)

Country Link
US (1) US6784079B2 (en)
EP (1) EP1394111B1 (en)
JP (1) JP4064918B2 (en)
KR (1) KR100677839B1 (en)
CN (1) CN1230379C (en)
AU (1) AU2002306289B2 (en)
CA (1) CA2418703C (en)
DE (1) DE60238399D1 (en)
NO (1) NO20030560L (en)
WO (1) WO2002100777A1 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4639004B2 (en) * 2001-06-21 2011-02-23 株式会社トクヤマ Silicon manufacturing apparatus and manufacturing method
JP4639005B2 (en) * 2001-07-03 2011-02-23 株式会社トクヤマ Method for producing silicon and trichlorosilane
NO20033207D0 (en) * 2002-07-31 2003-07-15 Per Kristian Egeberg Process and reactor for the production of high purity silicon, and the use of the process and reactor in the production of high purity silicon from unrefined silicon
WO2005073439A1 (en) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. Silicon single crystal, silicon wafer, production apparatus therefor and process for producing the same
DE102004010055A1 (en) * 2004-03-02 2005-09-22 Degussa Ag Process for the production of silicon
CA2567500C (en) * 2004-05-21 2010-07-13 Tokuyama Corporation Mass of silicon solidified from molten state and process for producing the same
EP1770062A4 (en) * 2004-06-22 2011-08-31 Tokuyama Corp CYLINDRICAL CONTAINER MADE OF CARBON AND METHOD FOR PRODUCING SILICON
JP4545505B2 (en) * 2004-07-22 2010-09-15 株式会社トクヤマ Method for producing silicon
JP4692247B2 (en) * 2005-11-29 2011-06-01 チッソ株式会社 Method for producing high-purity polycrystalline silicon
CN101460398B (en) * 2006-04-13 2012-08-29 卡伯特公司 Production of silicon through a closed-loop process
JP4845753B2 (en) * 2007-01-29 2011-12-28 京セラ株式会社 Cylindrical member and silicon deposition apparatus using the same
JP4801601B2 (en) * 2007-01-30 2011-10-26 株式会社アルバック Method for producing silicon
CN101707871B (en) * 2007-04-25 2013-06-12 卡甘·塞兰 Deposition of high-purity silicon via large surface area gas-solid or gas-liquid interface and liquid phase regeneration
US7744808B2 (en) * 2007-12-10 2010-06-29 Ajax Tocco Magnethermic Corporation System and method for producing shot from molten material
JP5614990B2 (en) * 2007-12-28 2014-10-29 株式会社トクヤマ Silicon production equipment
JP5334490B2 (en) * 2008-08-06 2013-11-06 株式会社トクヤマ Silicon production equipment
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
KR101527516B1 (en) 2008-12-16 2015-06-09 삼성전자주식회사 Silicon growth method and solar cell manufacturing method using the same
KR100945748B1 (en) * 2009-04-06 2010-03-05 (주)티에스티아이테크 Apparatus of manufacturing polysilicon
JP5375312B2 (en) * 2009-04-28 2013-12-25 三菱マテリアル株式会社 Polycrystalline silicon production equipment
CN102438946A (en) * 2009-05-22 2012-05-02 旭硝子株式会社 Device for producing silicon and process for producing silicon
DE102010045040A1 (en) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Method and apparatus for producing silicon
CN103153856A (en) * 2010-09-30 2013-06-12 捷恩智株式会社 Device for producing polycrystalline silicon and method for producing polycrystalline silicon
WO2012077677A1 (en) 2010-12-10 2012-06-14 株式会社トクヤマ Method for detecting water leak, device for chlorosilane hydrogen reduction reaction and production method using said device
DE102011113484A1 (en) * 2011-09-13 2013-03-14 Centrotherm Sitec Gmbh Separation device, useful for firing a silicon body in a separator actuator, comprises an attachment unit comprising the silicon body connectable with electrodes of the actuator, and heating device comprising a resistance heating element
DE102011119353A1 (en) * 2011-11-23 2013-05-23 Centrotherm Sitec Gmbh Crushing semiconductor molding, comprises producing semiconductor molding having cavity, filling cavity with liquid having density anomaly effect, and cooling liquid below freezing point for producing pressure in cavity
US20150175430A1 (en) 2012-07-09 2015-06-25 Tokuyama Corporation Method for Producing Polysilicon
DE102012109112A1 (en) * 2012-09-26 2014-04-17 Osram Opto Semiconductors Gmbh Manufacturing semiconductor component, comprises e.g. providing three-dimensional substrate body with first closed substrate surface, applying film-forming starting material on body, and forming layer sequence having semiconductor material
KR101955287B1 (en) * 2015-04-20 2019-03-08 주식회사 엘지화학 Horizontal Type Reactor For Producing Polycrystalline Silicon

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1507465A (en) * 1974-06-14 1978-04-12 Pilkington Brothers Ltd Coating glass
NL7508684A (en) * 1974-07-29 1976-02-02 Motorola Inc METHOD AND EQUIPMENT FOR THE PREPARATION OF SILICON.
JPS53108030A (en) 1977-03-04 1978-09-20 Komatsu Mfg Co Ltd Method of producing high purity and multicrystalline silicon
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4464222A (en) * 1980-07-28 1984-08-07 Monsanto Company Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases
JPS59121109A (en) 1982-12-24 1984-07-13 Denki Kagaku Kogyo Kk Production of high purity silicon
JPS63139013A (en) 1986-11-28 1988-06-10 Mitsubishi Metal Corp Production of polycrystalline silicon
JPH01208312A (en) 1988-02-15 1989-08-22 Shin Etsu Handotai Co Ltd Process for producing high-purity polycrystalline rod and reaction vessel used in said production process
JP2592373B2 (en) 1991-11-22 1997-03-19 株式会社本間ゴルフ Manufacturing method of golf club head
JP4157281B2 (en) 2000-05-11 2008-10-01 株式会社トクヤマ Reactor for silicon production

Similar Documents

Publication Publication Date Title
AU2002306289A1 (en) Method of manufacturing silicon
AU2002300205A1 (en) Method of manufacturing methanol
EP1416529B8 (en) Manufacturing method of semiconductor device
EP1361614B8 (en) Semiconductor device manufacturing method
AU2002300204A1 (en) Method of manufacturing methanol
EP1350588A3 (en) Method of manufacturing semiconductor device
AU2001277779A1 (en) Semiconductor device and method of its manufacture
AU2002348835A1 (en) Method of manufacturing a semiconductor device
EP1433591A4 (en) Method of manufacturing tire
AU2002354108A1 (en) Method of manufacturing semiconductor chip
PL355161A1 (en) Method of manufacture
AU2003227223A1 (en) Method of etching
GB0205528D0 (en) Method of manufacturing semiconductor devices
AU2002234091A1 (en) Method of manufacturing glass and compositions therefore
AU2001228168A1 (en) Method of manufacturing power silicon transistor
AU2002347562A1 (en) Method of enabling e-commerce
AU2002257513A1 (en) Method of manufacturing modules
AU2002327469A1 (en) Mems and method of manufacturing mems
AU2002350543A1 (en) Method for producing high-purity silicon
AUPR648501A0 (en) Method of manufacture
AU2002304139A1 (en) Method of fabricating semiconductor device
AU2002341472A1 (en) Method for the production of silicon nitride
AU2002250055A1 (en) Method of manufacturing liposomes
AU2002328511A1 (en) Method of manufacturing tire
AU2002233735A1 (en) Method for producing silicon